公开(公告)号：US10002659B2

公开(公告)日：2018-06-19

申请号：US15265677

申请日：2016-09-14

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jeffery W. Janzen ,  Brent Keeth ,  Jeffrey P. Wright ,  James S. Cullum

IPC: G06F13/10 ,  G11C11/4096 ,  G11C7/10 ,  G11C11/4076 ,  G11C11/406 ,  G11C11/408 ,  G11C11/4091

CPC classification number: G11C11/4096 ,  G11C7/1072 ,  G11C11/40611 ,  G11C11/4076 ,  G11C11/4087 ,  G11C11/4091

Abstract: A system and method for decoding command signals that includes a command decoder configured to generate internal control signals to perform an operation based on the command signals and an operating state. The same combination of command signals can request different commands depending on the operating state. A command is selected from a first set of operations according to the command signals when the memory system is in a first operating state and a command is selected from a second set of operations according to the command signals when the memory system is in a second operating state.

公开(公告)号：US09607930B2

公开(公告)日：2017-03-28

申请号：US15144065

申请日：2016-05-02

Applicant: Micron Technology, Inc.

Inventor： Jeffery W. Janzen ,  Michael Chaine ,  Kyle K. Kirby ,  William M. Hiatt

IPC: H01L23/48 ,  H01L25/065 ,  H01L21/768 ,  H01L23/525 ,  H01L23/60 ,  H01L25/00 ,  H01L21/50 ,  H01L23/52 ,  H01L21/82 ,  H01L23/62 ,  H01L23/00 ,  H01L27/02

CPC classification number: H01L23/481 ,  H01L21/50 ,  H01L21/76898 ,  H01L21/82 ,  H01L23/52 ,  H01L23/525 ,  H01L23/60 ,  H01L23/62 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0248 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17051 ,  H01L2224/17181 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/13034 ,  H01L2924/00014

Abstract: Pass-through 3D interconnects and microelectronic dies and systems of stacked dies that include such interconnects to disable electrical connections are disclosed herein. In one embodiment, a system of stacked dies includes a first microelectronic die having a backside, an interconnect extending through the first die to the backside, an integrated circuit electrically coupled to the interconnect, and a first electrostatic discharge (ESD) device electrically isolated from the interconnect. A second microelectronic die has a front side coupled to the backside of the first die, a metal contact at the front side electrically coupled to the interconnect, and a second ESD device electrically coupled to the metal contact. In another embodiment, the first die further includes a substrate carrying the integrated circuit and the first ESD device, and the interconnect is positioned in the substrate to disable an electrical connection between the first ESD device and the interconnect.

公开(公告)号：US20160247747A1

公开(公告)日：2016-08-25

申请号：US15144065

申请日：2016-05-02

Applicant: Micron Technology, Inc.

Inventor： Jeffery W. Janzen ,  Michael Chaine ,  Kyle K. Kirby ,  William M. Hiatt

IPC: H01L23/48 ,  H01L25/00 ,  H01L23/525 ,  H01L27/02 ,  H01L23/00 ,  H01L21/768 ,  H01L25/065

CPC classification number: H01L23/481 ,  H01L21/50 ,  H01L21/76898 ,  H01L21/82 ,  H01L23/52 ,  H01L23/525 ,  H01L23/60 ,  H01L23/62 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0248 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17051 ,  H01L2224/17181 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/13034 ,  H01L2924/00014

Abstract: Pass-through 3D interconnects and microelectronic dies and systems of stacked dies that include such interconnects to disable electrical connections are disclosed herein. In one embodiment, a system of stacked dies includes a first microelectronic die having a backside, an interconnect extending through the first die to the backside, an integrated circuit electrically coupled to the interconnect, and a first electrostatic discharge (ESD) device electrically isolated from the interconnect. A second microelectronic die has a front side coupled to the backside of the first die, a metal contact at the front side electrically coupled to the interconnect, and a second ESD device electrically coupled to the metal contact. In another embodiment, the first die further includes a substrate carrying the integrated circuit and the first ESD device, and the interconnect is positioned in the substrate to disable an electrical connection between the first ESD device and the interconnect.

公开(公告)号：US09343368B2

公开(公告)日：2016-05-17

申请号：US14324958

申请日：2014-07-07

Applicant: Micron Technology, Inc. ,  Russell D. Slifer

Inventor： Jeffery W. Janzen ,  Michael Chaine ,  Kyle K. Kirby ,  William M. Hiatt

IPC: H01L21/768 ,  H01L23/48 ,  H01L21/82 ,  H01L23/525 ,  H01L23/60 ,  H01L25/065 ,  H01L25/00 ,  H01L21/50 ,  H01L23/52 ,  H01L23/62

CPC classification number: H01L23/481 ,  H01L21/50 ,  H01L21/76898 ,  H01L21/82 ,  H01L23/52 ,  H01L23/525 ,  H01L23/60 ,  H01L23/62 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0248 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17051 ,  H01L2224/17181 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/13034 ,  H01L2924/00014

Abstract: Pass-through 3D interconnects and microelectronic dies and systems of stacked dies that include such interconnects to disable electrical connections are disclosed herein. In one embodiment, a system of stacked dies includes a first microelectronic die having a backside, an interconnect extending through the first die to the backside, an integrated circuit electrically coupled to the interconnect, and a first electrostatic discharge (ESD) device electrically isolated from the interconnect. A second microelectronic die has a front side coupled to the backside of the first die, a metal contact at the front side electrically coupled to the interconnect, and a second ESD device electrically coupled to the metal contact. In another embodiment, the first die further includes a substrate carrying the integrated circuit and the first ESD device, and the interconnect is positioned in the substrate to disable an electrical connection between the first ESD device and the interconnect.

公开(公告)号：US20140319697A1

公开(公告)日：2014-10-30

申请号：US14324958

申请日：2014-07-07

Applicant: Micron Technology, Inc.

Inventor： Jeffery W. Janzen ,  Michael Chaine ,  Kyle K. Kirby ,  William M. Hiatt

IPC: H01L23/48 ,  H01L21/768 ,  H01L23/62 ,  H01L21/82

CPC classification number: H01L23/481 ,  H01L21/50 ,  H01L21/76898 ,  H01L21/82 ,  H01L23/52 ,  H01L23/525 ,  H01L23/60 ,  H01L23/62 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0248 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17051 ,  H01L2224/17181 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/13034 ,  H01L2924/00014

Abstract: Pass-through 3D interconnects and microelectronic dies and systems of stacked dies that include such interconnects to disable electrical connections are disclosed herein. In one embodiment, a system of stacked dies includes a first microelectronic die having a backside, an interconnect extending through the first die to the backside, an integrated circuit electrically coupled to the interconnect, and a first electrostatic discharge (ESD) device electrically isolated from the interconnect. A second microelectronic die has a front side coupled to the backside of the first die, a metal contact at the front side electrically coupled to the interconnect, and a second ESD device electrically coupled to the metal contact. In another embodiment, the first die further includes a substrate carrying the integrated circuit and the first ESD device, and the interconnect is positioned in the substrate to disable an electrical connection between the first ESD device and the interconnect.

Abstract translation: 本文公开了直通3D互连和微电子管芯以及包括这种互连以禁用电连接的堆叠管芯的系统。 在一个实施例中，堆叠管芯的系统包括具有背面的第一微电子管芯，经由第一管芯延伸到背面的互连件，电耦合到互连的集成电路，以及与第一静电放电（ESD）器件电隔离的第一静电放电 互连。 第二微电子管芯具有耦合到第一管芯的背侧的前侧，电连接到互连的前侧的金属接触件和电耦合到金属接触件的第二ESD器件。 在另一实施例中，第一管芯还包括承载集成电路和第一ESD器件的衬底，并且互连件位于衬底中，以禁止第一ESD器件和互连件之间的电连接。

公开(公告)号：US08772086B2

公开(公告)日：2014-07-08

申请号：US13850803

申请日：2013-03-26

Applicant: Russell D. Slifer ,  Micron Technology, Inc.

Inventor： Jeffery W. Janzen ,  Michael Chaine ,  Kyle K. Kirby ,  William M. Hiatt

IPC: H01L21/00

CPC classification number: H01L23/481 ,  H01L21/50 ,  H01L21/76898 ,  H01L21/82 ,  H01L23/52 ,  H01L23/525 ,  H01L23/60 ,  H01L23/62 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0248 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17051 ,  H01L2224/17181 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/13034 ,  H01L2924/00014

Abstract: Pass-through 3D interconnects and microelectronic dies and systems of stacked dies that include such interconnects to disable electrical connections are disclosed herein. In one embodiment, a system of stacked dies includes a first microelectronic die having a backside, an interconnect extending through the first die to the backside, an integrated circuit electrically coupled to the interconnect, and a first electrostatic discharge (ESD) device electrically isolated from the interconnect. A second microelectronic die has a front side coupled to the backside of the first die, a metal contact at the front side electrically coupled to the interconnect, and a second ESD device electrically coupled to the metal contact. In another embodiment, the first die further includes a substrate carrying the integrated circuit and the first ESD device, and the interconnect is positioned in the substrate to disable an electrical connection between the first ESD device and the interconnect.

Abstract translation: 本文公开了直通3D互连和微电子管芯以及包括这种互连以禁用电连接的堆叠管芯的系统。 在一个实施例中，堆叠管芯的系统包括具有背面的第一微电子管芯，经由第一管芯延伸到背面的互连件，电耦合到互连的集成电路，以及与第一静电放电（ESD）器件电隔离的第一静电放电 互连。 第二微电子管芯具有耦合到第一管芯的背侧的前侧，电连接到互连的前侧的金属接触件和电耦合到金属接触件的第二ESD器件。 在另一实施例中，第一管芯还包括承载集成电路和第一ESD器件的衬底，并且互连件位于衬底中，以禁止第一ESD器件和互连件之间的电连接。

公开(公告)号：US20130214421A1

公开(公告)日：2013-08-22

申请号：US13850803

申请日：2013-03-26

Applicant: Russell D. Slifer ,  Russell D. Slifer ,  MICRON TECHNOLOGY, INC.

Inventor： Jeffery W. Janzen ,  Michael Chaine ,  Kyle K. Kirby ,  William M. Hiatt

IPC: H01L23/52 ,  H01L21/50

CPC classification number: H01L23/481 ,  H01L21/50 ,  H01L21/76898 ,  H01L21/82 ,  H01L23/52 ,  H01L23/525 ,  H01L23/60 ,  H01L23/62 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0248 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17051 ,  H01L2224/17181 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/13034 ,  H01L2924/00014

Abstract: Pass-through 3D interconnects and microelectronic dies and systems of stacked dies that include such interconnects to disable electrical connections are disclosed herein. In one embodiment, a system of stacked dies includes a first microelectronic die having a backside, an interconnect extending through the first die to the backside, an integrated circuit electrically coupled to the interconnect, and a first electrostatic discharge (ESD) device electrically isolated from the interconnect. A second microelectronic die has a front side coupled to the backside of the first die, a metal contact at the front side electrically coupled to the interconnect, and a second ESD device electrically coupled to the metal contact. In another embodiment, the first die further includes a substrate carrying the integrated circuit and the first ESD device, and the interconnect is positioned in the substrate to disable an electrical connection between the first ESD device and the interconnect.