公开(公告)号：US08686313B2

公开(公告)日：2014-04-01

申请号：US14029105

申请日：2013-09-17

Applicant: Micron Technology, Inc.

Inventor： Charles M. Watkins ,  William M. Hiatt

IPC: H01L21/00 ,  B23K26/36

CPC classification number: B23K26/382 ,  B23K26/03 ,  B23K26/0342 ,  B23K26/361 ,  B23K26/362 ,  B23K26/38 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/486 ,  H01L21/76898 ,  H05K3/0026 ,  H05K2203/163 ,  Y10T29/49165

Abstract: Systems and methods for forming apertures in microfeature workpieces are disclosed herein. In one embodiment, a method includes directing a laser beam toward a microfeature workpiece to form an aperture and sensing the laser beam pass through the microfeature workpiece in real time. The method can further include determining a number of pulses of the laser beam and/or an elapsed time to form the aperture and controlling the laser beam based on the determined number of pulses and/or the determined elapsed time to form a second aperture in the microfeature workpiece.

Abstract translation: 本文公开了用于在微特征工件中形成孔的系统和方法。 在一个实施例中，一种方法包括将激光束引向微特征工件以形成孔径并且感测激光束实时地通过微特征工件。 该方法还可以包括确定激光束的脉冲数量和/或经过的时间以形成孔径并且基于所确定的脉冲数量和/或确定的经过时间来控制激光束以形成第二孔径 微特工件。

公开(公告)号：US20140014635A1

公开(公告)日：2014-01-16

申请号：US14029105

申请日：2013-09-17

Applicant: Micron Technology, Inc.

Inventor： Charles M. Watkins ,  William M. Hiatt

IPC: B23K26/38 ,  H01L21/48

CPC classification number: B23K26/382 ,  B23K26/03 ,  B23K26/0342 ,  B23K26/361 ,  B23K26/362 ,  B23K26/38 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/486 ,  H01L21/76898 ,  H05K3/0026 ,  H05K2203/163 ,  Y10T29/49165

Abstract: Systems and methods for forming apertures in microfeature workpieces are disclosed herein. In one embodiment, a method includes directing a laser beam toward a microfeature workpiece to form an aperture and sensing the laser beam pass through the microfeature workpiece in real time. The method can further include determining a number of pulses of the laser beam and/or an elapsed time to form the aperture and controlling the laser beam based on the determined number of pulses and/or the determined elapsed time to form a second aperture in the microfeature workpiece.

Abstract translation: 本文公开了用于在微特征工件中形成孔的系统和方法。 在一个实施例中，一种方法包括将激光束引向微特征工件以形成孔径并且感测激光束实时地通过微特征工件。 该方法还可以包括确定激光束的脉冲数量和/或经过的时间以形成孔径并且基于所确定的脉冲数量和/或确定的经过时间来控制激光束以形成第二孔径 微特工件。

公开(公告)号：US11075146B2

公开(公告)日：2021-07-27

申请号：US16722652

申请日：2019-12-20

Applicant: Micron Technology, Inc.

Inventor： Warren M. Farnworth ,  Rick C. Lake ,  William M. Hiatt

IPC: H01L23/48 ,  H01L23/00 ,  H01L23/488 ,  H01L21/768 ,  H01L23/498

Abstract: Microfeature workpieces having alloyed conductive structures, and associated methods are disclosed. A method in accordance with one embodiment includes applying a volume of material to a bond pad of a microfeature workpiece, with the volume of material including a first metallic constituent and the bond pad including a second constituent. The method can further include elevating a temperature of the volume of material while the volume of material is applied to the bond pad to alloy the first metallic constituent and the second metallic constituent so that the first metallic constituent is alloyed generally throughout the volume of material. A thickness of the bond pad can be reduced from an initial thickness T1 to a reduced thickness T2.

公开(公告)号：US20170320154A1

公开(公告)日：2017-11-09

申请号：US15657388

申请日：2017-07-24

Applicant: Micron Technology, Inc.

Inventor： Warren M. Farnworth ,  Rick C. Lake ,  William M. Hiatt

IPC: B23K1/20 ,  B23K1/00 ,  H01L29/40 ,  B23K35/22

CPC classification number: H01L23/481 ,  B23K1/0016 ,  H01L21/76898 ,  H01L23/488 ,  H01L23/49827 ,  H01L24/05 ,  H01L24/29 ,  H01L2224/05001 ,  H01L2224/11

Abstract: Microfeature workpieces having alloyed conductive structures, and associated methods are disclosed. A method in accordance with one embodiment includes applying a volume of material to a bond pad of a microfeature workpiece, with the volume of material including a first metallic constituent and the bond pad including a second constituent. The method can further include elevating a temperature of the volume of material while the volume of material is applied to the bond pad to alloy the first metallic constituent and the second metallic constituent so that the first metallic constituent is alloyed generally throughout the volume of material. A thickness of the bond pad can be reduced from an initial thickness T1 to a reduced thickness T2.

公开(公告)号：US20170008129A1

公开(公告)日：2017-01-12

申请号：US15276627

申请日：2016-09-26

Applicant: Micron Technology, Inc.

Inventor： Charles M. Watkins ,  William M. Hiatt

IPC: B23K26/382 ,  H01L21/768 ,  H05K3/00 ,  H01L21/48 ,  B23K26/03 ,  B23K26/362

CPC classification number: B23K26/382 ,  B23K26/03 ,  B23K26/0342 ,  B23K26/361 ,  B23K26/362 ,  B23K26/38 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/486 ,  H01L21/76898 ,  H05K3/0026 ,  H05K2203/163 ,  Y10T29/49165

Abstract: Systems and methods for forming apertures in microfeature workpieces are disclosed herein. In one embodiment, a method includes directing a laser beam toward a microfeature workpiece to form an aperture and sensing the laser beam pass through the microfeature workpiece in real time. The method can further include determining a number of pulses of the laser beam and/or an elapsed time to form the aperture and controlling the laser beam based on the determined number of pulses and/or the determined elapsed time to form a second aperture in the microfeature workpiece.

Abstract translation: 本文公开了用于在微特征工件中形成孔的系统和方法。 在一个实施例中，一种方法包括将激光束引向微特征工件以形成孔径并且感测激光束实时地通过微特征工件。 该方法还可以包括确定激光束的脉冲数量和/或经过的时间以形成孔径并且基于所确定的脉冲数量和/或确定的经过时间来控制激光束以形成第二孔径 微特工件。

公开(公告)号：US20160247747A1

公开(公告)日：2016-08-25

申请号：US15144065

申请日：2016-05-02

Applicant: Micron Technology, Inc.

Inventor： Jeffery W. Janzen ,  Michael Chaine ,  Kyle K. Kirby ,  William M. Hiatt

IPC: H01L23/48 ,  H01L25/00 ,  H01L23/525 ,  H01L27/02 ,  H01L23/00 ,  H01L21/768 ,  H01L25/065

CPC classification number: H01L23/481 ,  H01L21/50 ,  H01L21/76898 ,  H01L21/82 ,  H01L23/52 ,  H01L23/525 ,  H01L23/60 ,  H01L23/62 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0248 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17051 ,  H01L2224/17181 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/13034 ,  H01L2924/00014

Abstract: Pass-through 3D interconnects and microelectronic dies and systems of stacked dies that include such interconnects to disable electrical connections are disclosed herein. In one embodiment, a system of stacked dies includes a first microelectronic die having a backside, an interconnect extending through the first die to the backside, an integrated circuit electrically coupled to the interconnect, and a first electrostatic discharge (ESD) device electrically isolated from the interconnect. A second microelectronic die has a front side coupled to the backside of the first die, a metal contact at the front side electrically coupled to the interconnect, and a second ESD device electrically coupled to the metal contact. In another embodiment, the first die further includes a substrate carrying the integrated circuit and the first ESD device, and the interconnect is positioned in the substrate to disable an electrical connection between the first ESD device and the interconnect.

公开(公告)号：US20130295766A1

公开(公告)日：2013-11-07

申请号：US13940034

申请日：2013-07-11

Applicant: Micron Technology, Inc.

Inventor： Salman Akram ,  Charles M. Watkins ,  William M. Hiatt ,  David R. Hembree ,  James M. Wark ,  Warren M. Farnworth ,  Mark E. Tuttle ,  Sidney B. Rigg ,  Steven D. Oliver ,  Kyle K. Kirby ,  Alan G. Wood ,  Lu Velicky

IPC: H01L21/768

CPC classification number: H01L21/76877 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/45 ,  H01L27/14634 ,  H01L27/14636 ,  H01L2221/6834 ,  H01L2224/02166 ,  H01L2224/0554 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Further, a smaller and more reliable die package is achieved and circuit parasitics (e.g., L and R) are reduced due to the reduced signal path lengths.

Abstract translation: 公开了一种用于成像器，存储器和其他集成电路应用的透晶片互连，从而消除了对引线接合的需要，使得结合这种互连的器件可堆叠并且实现成像器件的晶片级封装。 此外，实现了更小且更可靠的管芯封装，并且由于信号路径长度的减小，电路寄生（例如，L和R）被减小。

公开(公告)号：US12014958B2

公开(公告)日：2024-06-18

申请号：US18047049

申请日：2022-10-17

Applicant: Micron Technology, Inc.

Inventor： William M. Hiatt ,  Ross S. Dando

IPC: H01L21/768 ,  H01L23/48 ,  H01L23/498 ,  H01L23/538

CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/5384 ,  H01L2224/13025

Abstract: Methods for forming interconnects in microfeature workpieces, and microfeature workpieces having such interconnects are disclosed herein. The microfeature workpieces may have a terminal and a substrate with a first side carrying the terminal and a second side opposite the first side. In one embodiment, a method includes (a) constructing an electrically conductive interconnect extending from the terminal to at least an intermediate depth in the substrate with the interconnect electrically connected to the terminal, and (b) removing material from the second side of the substrate so that a portion of the interconnect projects from the substrate.

公开(公告)号：US11476160B2

公开(公告)日：2022-10-18

申请号：US16991965

申请日：2020-08-12

Applicant: Micron Technology, Inc.

Inventor： William M. Hiatt ,  Ross S. Dando

IPC: H01L21/768 ,  H01L23/48 ,  H01L23/498 ,  H01L23/538

Abstract: Methods for forming interconnects in microfeature workpieces, and microfeature workpieces having such interconnects are disclosed herein. The microfeature workpieces may have a terminal and a substrate with a first side carrying the terminal and a second side opposite the first side. In one embodiment, a method includes (a) constructing an electrically conductive interconnect extending from the terminal to at least an intermediate depth in the substrate with the interconnect electrically connected to the terminal, and (b) removing material from the second side of the substrate so that a portion of the interconnect projects from the substrate.

公开(公告)号：US20170301639A1

公开(公告)日：2017-10-19

申请号：US15583500

申请日：2017-05-01

Applicant: Micron Technology, Inc.

Inventor： William M. Hiatt ,  Kyle K. Kirby

IPC: H01L23/00 ,  H01L23/48 ,  H01L21/683 ,  H01L25/065 ,  H01L25/00 ,  H01L21/768 ,  H01L23/498

Abstract: Microelectronic devices and methods for filling vias and forming conductive interconnects in microfeature workpieces and dies are disclosed herein. In one embodiment, a method includes providing a microfeature workpiece having a plurality of dies and at least one passage extending through the microfeature workpiece from a first side of the microfeature workpiece to an opposite second side of the microfeature workpiece. The method can further include forming a conductive plug in the passage adjacent to the first side of the microelectronic workpiece, and depositing conductive material in the passage to at least generally fill the passage from the conductive plug to the second side of the microelectronic workpiece.