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公开(公告)号：US20210174874A1
公开(公告)日：2021-06-10
申请号：US17027425
申请日：2020-09-21
Applicant: Micron Technology, Inc.
Inventor： Akira Goda , Shafqat Ahmed , Khaled Hasnat , Krishna K. Parat
IPC: G11C16/04 , H01L27/11519 , H01L27/11556 , H01L27/11565 , H01L27/11582 , G11C16/26 , G11C16/34 , G11C16/12 , G11C16/14 , G11C16/06
Abstract: Apparatus and methods are disclosed, such as an apparatus that includes a string of charge storage devices associated with a pillar (e.g., of semiconductor material), a source gate device, and a source select device coupled between the source gate device and the string. Additional apparatus and methods are described.
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公开(公告)号：US10170189B2
公开(公告)日：2019-01-01
申请号：US15721007
申请日：2017-09-29
Applicant: Micron Technology, Inc.
Inventor： Akira Goda , Shafqat Ahmed , Khaled Hasnat , Krishna K. Parat
IPC: G11C16/04 , H01L27/11519 , H01L27/11556 , H01L27/11565 , H01L27/11582 , G11C16/26 , G11C16/34 , G11C16/12 , G11C16/14 , G11C16/06 , G11C16/10
Abstract: Apparatus and methods are disclosed, such as an apparatus that includes a string of charge storage devices associated with a pillar (e.g., of semiconductor material), a source gate device, and a source select device coupled between the source gate device and the string. Additional apparatus and methods are described.
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公开(公告)号：US20180122481A1
公开(公告)日：2018-05-03
申请号：US15721007
申请日：2017-09-29
Applicant: Micron Technology, Inc.
Inventor： Akira Goda , Shafqat Ahmed , Khaled Hasnat , Krishna K. Parat
CPC classification number: G11C16/0483 , G11C16/0408 , G11C16/06 , G11C16/10 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3418 , G11C16/3427 , H01L27/11519 , H01L27/11556 , H01L27/11565 , H01L27/11582
Abstract: Apparatus and methods are disclosed, such as an apparatus that includes a string of charge storage devices associated with a pillar (e.g., of semiconductor material), a source gate device, and a source select device coupled between the source gate device and the string. Additional apparatus and methods are described.
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公开(公告)号：US20170075613A1
公开(公告)日：2017-03-16
申请号：US15342287
申请日：2016-11-03
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Shafqat Ahmed , Khaled Hasnat , Pranav Kalavade , Krishna Parat , Aaron Yip , Mark A. Helm , Andrew Bicksler
IPC: G06F3/06 , G06F12/0846
CPC classification number: G06F3/0625 , G06F3/061 , G06F3/0653 , G06F3/0665 , G06F3/0688 , G06F3/0689 , G06F12/0804 , G06F12/0846 , G06F13/28 , G06F2212/2022 , G06F2212/224 , G06F2212/461 , G11C16/0483 , G11C16/24 , G11C16/26 , Y02D10/14
Abstract: In a memory device, odd bit lines of a flag memory cell array are connected with a short circuit to a dynamic data cache. Even bit lines of the flag memory cell array are disconnected from the dynamic data cache. When an even page of a main memory cell array is read, the odd flag memory cells, comprising flag data, are read at the same time so that it can be determined whether the odd page of the main memory cell array has been programmed. If the flag data indicates that the odd page has not been programmed, threshold voltage windows can be adjusted to determine the states of the sensed even memory cell page.
Abstract translation: 在存储器装置中，标志存储单元阵列的奇数位线与短路连接到动态数据高速缓存。 标记存储单元阵列的偶数位线与动态数据高速缓存断开连接。 当读取主存储单元阵列的偶数页时，同时读取包括标志数据的奇数标志存储单元，以便可以确定主存储单元阵列的奇数页是否已被编程。 如果标志数据指示奇数页未被编程，则可以调整阈值电压窗口以确定感测到的偶数存储单元页的状态。
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公开(公告)号：US20250124982A1
公开(公告)日：2025-04-17
申请号：US18932143
申请日：2024-10-30
Applicant: Micron Technology, Inc.
Inventor： Akira Goda , Shafqat Ahmed , Khaled Hasnat , Krishna K. Parat
IPC: G11C16/04 , G11C16/06 , G11C16/10 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/34 , H10B41/10 , H10B41/27 , H10B43/10 , H10B43/27
Abstract: Apparatus and methods are disclosed, such as an apparatus that includes a string of charge storage devices associated with a pillar (e.g., of semiconductor material), a source gate device, and a source select device coupled between the source gate device and the string. Additional apparatus and methods are described.
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Patent Agency Ranking
公开(公告)号：US12148474B2
公开(公告)日：2024-11-19
申请号：US17561656
申请日：2021-12-23
Applicant: Micron Technology, Inc.
Inventor： Akira Goda , Shafqat Ahmed , Khaled Hasnat , Krishna K. Parat
IPC: G11C16/04 , G11C16/06 , G11C16/10 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/34 , H10B41/10 , H10B41/27 , H10B43/10 , H10B43/27
Abstract: Apparatus and methods are disclosed, such as an apparatus that includes a string of charge storage devices associated with a pillar (e.g., of semiconductor material), a source gate device, and a source select device coupled between the source gate device and the string. Additional apparatus and methods are described.
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公开(公告)号：US10126967B2
公开(公告)日：2018-11-13
申请号：US15342287
申请日：2016-11-03
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Shafqat Ahmed , Khaled Hasnat , Pranav Kalavade , Krishna Parat , Aaron Yip , Mark A. Helm , Andrew Bicksler
IPC: G06F3/06 , G11C16/04 , G11C16/24 , G11C16/26 , G06F12/0804 , G06F13/28 , G06F12/0846
Abstract: In a memory device, odd bit lines of a flag memory cell array are connected with a short circuit to a dynamic data cache. Even bit lines of the flag memory cell array are disconnected from the dynamic data cache. When an even page of a main memory cell array is read, the odd flag memory cells, comprising flag data, are read at the same time so that it can be determined whether the odd page of the main memory cell array has been programmed. If the flag data indicates that the odd page has not been programmed, threshold voltage windows can be adjusted to determine the states of the sensed even memory cell page.
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公开(公告)号：US09378839B2
公开(公告)日：2016-06-28
申请号：US14451145
申请日：2014-08-04
Applicant: Micron Technology, Inc.
Inventor： Akira Goda , Shafqat Ahmed , Khaled Hasnat , Krishna K. Parat
CPC classification number: G11C16/0483 , G11C16/0408 , G11C16/06 , G11C16/10 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3418 , G11C16/3427 , H01L27/11519 , H01L27/11556 , H01L27/11565 , H01L27/11582
Abstract: Apparatus and methods are disclosed, such as an apparatus that includes a string of charge storage devices associated with a pillar (e.g., of semiconductor material), a source gate device, and a source select device coupled between the source gate device and the string. Additional apparatus and methods are described.
Abstract translation: 公开了装置和方法，例如包括与柱（例如半导体材料）相关联的一串电荷存储装置的装置，源极栅极装置和耦合在源栅极装置和串之间的源选择装置。 描述附加的装置和方法。
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公开(公告)号：US20140340963A1
公开(公告)日：2014-11-20
申请号：US14451145
申请日：2014-08-04
Applicant: Micron Technology, Inc.
Inventor： Akira Goda , Shafqat Ahmed , Khaled Hasnat , Krishna K. Parat
CPC classification number: G11C16/0483 , G11C16/0408 , G11C16/06 , G11C16/10 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3418 , G11C16/3427 , H01L27/11519 , H01L27/11556 , H01L27/11565 , H01L27/11582
Abstract: Apparatus and methods are disclosed, such as an apparatus that includes a string of charge storage devices associated with a pillar (e.g., of semiconductor material), a source gate device, and a source select device coupled between the source gate device and the string. Additional apparatus and methods are described.
Abstract translation: 公开了装置和方法，例如包括与柱（例如半导体材料）相关联的一串电荷存储装置的装置，源极栅极装置和耦合在源栅极装置和串之间的源选择装置。 描述附加的装置和方法。
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公开(公告)号：US20220189552A1
公开(公告)日：2022-06-16
申请号：US17561656
申请日：2021-12-23
Applicant: Micron Technology, Inc.
Inventor： Akira Goda , Shafqat Ahmed , Khaled Hasnat , Krishna K. Parat
IPC: G11C16/04 , H01L27/11519 , H01L27/11556 , H01L27/11565 , H01L27/11582 , G11C16/26 , G11C16/34 , G11C16/12 , G11C16/14 , G11C16/06
Abstract: Apparatus and methods are disclosed, such as an apparatus that includes a string of charge storage devices associated with a pillar (e.g., of semiconductor material), a source gate device, and a source select device coupled between the source gate device and the string. Additional apparatus and methods are described.
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