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    Sense flags in a memory device
    1.
    发明授权
    Sense flags in a memory device 有权

    公开(公告)号：US11029861B2

    公开(公告)日：2021-06-08

    申请号：US16543743

    申请日：2019-08-19

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Shafqat Ahmed ,  Khaled Hasnat ,  Pranav Kalavade ,  Krishna Parat ,  Aaron Yip ,  Mark A. Helm ,  Andrew Bicksler

    IPC: G06F3/06 ,  G11C16/24 ,  G11C16/26 ,  G11C16/04 ,  G06F12/0804 ,  G06F13/28 ,  G06F12/0846

    Abstract: Memory devices might be configured to perform methods including reading a first page of memory cells and flag data wherein the flag data indicates whether a second page of memory cells adjacent to the first page is programmed, and determining from the flag data whether to re-read the first page of memory cells with an adjusted read voltage; performing a sense operation on memory cells coupled to first data lines of a first array of memory cells and memory cells coupled to data lines of a second array of memory cells, and determining a program indication of memory cells coupled to second data lines from the sense operation performed on the memory cells coupled to the data lines of the second array of memory cells; and/or programming memory cells coupled to first data lines in a first array of memory cells, and programming memory cells coupled to second data lines in the first array of memory cells while programming memory cells coupled to data lines in a second array of memory cells with flag data indicative of the memory cells coupled to the second data lines in the first array of memory cells being programmed.

    Sense flags in a memory device
    4.
    发明授权
    Sense flags in a memory device 有权

    公开(公告)号：US10409506B2

    公开(公告)日：2019-09-10

    申请号：US16117348

    申请日：2018-08-30

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Shafqat Ahmed ,  Khaled Hasnat ,  Pranav Kalavade ,  Krishna Parat ,  Aaron Yip ,  Mark A. Helm ,  Andrew Bicksler

    IPC: G06F3/06 ,  G11C16/04 ,  G11C16/24 ,  G11C16/26 ,  G06F12/0804 ,  G06F13/28 ,  G06F12/0846

    Abstract: Methods for programming sense flags may include programming memory cells coupled to first data lines in a main memory array, and programming memory cells coupled to second data lines in the main memory array while programming memory cells coupled to data lines in a flag memory array with flag data indicative of the memory cells coupled to the second data lines being programmed. Methods for sensing flags may include performing a sense operation on memory cells coupled to first data lines of a main memory array and memory cells coupled to data lines of a flag memory array, and determining a program indication of memory cells coupled to second data lines of the main memory array from the sense operation performed on the memory cells coupled to the data lines of the flag memory array.

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