Method for etching a layer on a substrate
    7.
    发明授权
    Method for etching a layer on a substrate 有权
    蚀刻基板上的层的方法

    公开(公告)号:US08182707B2

    公开(公告)日:2012-05-22

    申请号:US11658461

    申请日:2005-07-01

    摘要: A method for etching a layer that is to be removed on a substrate, in which a Si1-xGex layer is the layer to be removed, this layer being removed, at least in areas, in gas phase etching with the aid of an etching gas, in particular ClF3. The etching behavior of the Si1-xGex layer can be controlled via the Ge portion in the Si1-xGex layer. The etching method is particularly well-suited for manufacturing self-supporting structures in a micromechanical sensor and for manufacturing such self-supporting structures in a closed hollow space, because the Si1-xGex layer, as a sacrificial layer or filling layer, is etched highly selectively relative to silicon.

    摘要翻译: 在蚀刻气体辅助下,在气相蚀刻中至少在区域中蚀刻要除去的层的方法,其中Si1-xGex层是要去除的层,Si1-xGex层被去除的层, ,特别是ClF3。 可以通过Si1-xGex层中的Ge部分来控制Si1-xGex层的蚀刻行为。 蚀刻方法特别适用于在微机械传感器中制造自支撑结构,并且在封闭的中空空间中制造这种自支撑结构,因为作为牺牲层或填充层的Si1-xGex层被高度蚀刻 选择性地相对于硅。