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公开(公告)号：US07898046B2
公开(公告)日：2011-03-01
申请号：US12506219
申请日：2009-07-20
申请人： Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
发明人： Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
IPC分类号： H01L21/00
CPC分类号： B81C1/0096 , B81B3/0005
摘要： An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450 C is described. The coating is applied after device release but before sealing vents in the encapsulation layer. Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.
摘要翻译： 描述了一种封装的MEMS工艺，其包括在高于450℃的温度下在加工步骤下稳定的高温抗静电涂层。 涂层在器件释放后，但在封装层封口之前应用。 或者，可以在封装之前将抗静电涂层直接施加到释放的装置。
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2.发明授权公开(公告)号：US07582514B2
公开(公告)日：2009-09-01
申请号：US11844844
申请日：2007-08-24
申请人： Cyril Vancura , Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
发明人： Cyril Vancura , Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
IPC分类号： H01L21/44
CPC分类号： B81C1/0096 , B81B3/0005
摘要： An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450° C. is described. The coating is applied after device release but before sealing vents in the encapsulation layer. Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.
摘要翻译： 描述了一种封装的MEMS工艺，其包括在450℃以上的加工步骤下稳定的高温抗静电涂层。 涂层在器件释放后，但在封装层封口之前应用。 或者，可以在封装之前将抗静电涂层直接施加到释放的装置。
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公开(公告)号：US07563633B2
公开(公告)日：2009-07-21
申请号：US11510040
申请日：2006-08-25
申请人： Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
发明人： Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
IPC分类号： H01L21/00
CPC分类号： B81C1/0096 , B81B3/0005
摘要： An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450 C is described. The coating is applied after device release but before sealing vents in the encapsulation layer. Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.
摘要翻译： 描述了一种封装的MEMS工艺，其包括在高于450℃的温度下在加工步骤下稳定的高温抗静电涂层。 涂层在器件释放后，但在封装层封口之前应用。 或者，可以在封装之前将抗静电涂层直接施加到释放装置。
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4.发明申请Microelectromechanical Systems Encapsulation Process with Anti-Stiction Coating 有权具有抗静电涂层的微机电系统封装工艺公开(公告)号：US20080050861A1
公开(公告)日：2008-02-28
申请号：US11844844
申请日：2007-08-24
申请人： Cyril Vancura , Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
发明人： Cyril Vancura , Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
IPC分类号： H01L21/00
CPC分类号： B81C1/0096 , B81B3/0005
摘要： An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450° C. is described. The coating is applied after device release but before sealing vents in the encapsulation layer. Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.
摘要翻译： 描述了一种封装的MEMS工艺，其包括在450℃以上的加工步骤下稳定的高温抗静电涂层。 涂层在器件释放后，但在封装层封口之前应用。 或者，可以在封装之前将抗静电涂层直接施加到释放的装置。
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公开(公告)号：US20090278214A1
公开(公告)日：2009-11-12
申请号：US12506219
申请日：2009-07-20
申请人： Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
发明人： Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
IPC分类号： H01L29/84
CPC分类号： B81C1/0096 , B81B3/0005
摘要： An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450 C is described. The coating is applied after device release but before sealing vents in the encapsulation layer. Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.
摘要翻译： 描述了一种封装的MEMS工艺，其包括在高于450℃的温度下在加工步骤下稳定的高温抗静电涂层。 涂层在器件释放后，但在封装层封口之前应用。 或者，可以在封装之前将抗静电涂层直接施加到释放的装置。
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公开(公告)号：US08182707B2
公开(公告)日：2012-05-22
申请号：US11658461
申请日：2005-07-01
CPC分类号： H01L21/32137 , B81C1/00476 , B81C1/00595 , H01L21/3065 , H01L21/30655
摘要： A method for etching a layer that is to be removed on a substrate, in which a Si1-xGex layer is the layer to be removed, this layer being removed, at least in areas, in gas phase etching with the aid of an etching gas, in particular ClF3. The etching behavior of the Si1-xGex layer can be controlled via the Ge portion in the Si1-xGex layer. The etching method is particularly well-suited for manufacturing self-supporting structures in a micromechanical sensor and for manufacturing such self-supporting structures in a closed hollow space, because the Si1-xGex layer, as a sacrificial layer or filling layer, is etched highly selectively relative to silicon.
摘要翻译： 在蚀刻气体辅助下，在气相蚀刻中至少在区域中蚀刻要除去的层的方法，其中Si1-xGex层是要去除的层，Si1-xGex层被去除的层， ，特别是ClF3。 可以通过Si1-xGex层中的Ge部分来控制Si1-xGex层的蚀刻行为。 蚀刻方法特别适用于在微机械传感器中制造自支撑结构，并且在封闭的中空空间中制造这种自支撑结构，因为作为牺牲层或填充层的Si1-xGex层被高度蚀刻 选择性地相对于硅。
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公开(公告)号：US20100127339A1
公开(公告)日：2010-05-27
申请号：US12312165
申请日：2007-09-10
申请人： Franz Laermer , Silvia Kronmueller , Tino Fuchs
发明人： Franz Laermer , Silvia Kronmueller , Tino Fuchs
CPC分类号： B81C1/0096 , B81B3/0005 , B81C2201/112 , B81C2203/0109 , B81C2203/031
摘要： A micromechanical component, having a substrate and a functional element, the functional element having a functional surface which has an anti-adhesion layer, that has been applied at least in regions, for reducing the surface adhesion forces, and in which the anti-adhesion layer is stable to a temperature of more than 800° C.
摘要翻译： 具有基材和功能元件的微机械部件具有功能性表面，该功能性表面具有抗粘附层，该功能性表面至少在区域中被应用于减少表面粘附力，其中抗粘附性 层对于超过800℃的温度是稳定的
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公开(公告)号：US20090026561A1
公开(公告)日：2009-01-29
申请号：US11883671
申请日：2006-01-25
申请人： Frank Reichenbach , Franz Laermer , Silvia Kronmueller , Christoph Schelling , Tino Fuchs , Christina Leinenbach
发明人： Frank Reichenbach , Franz Laermer , Silvia Kronmueller , Christoph Schelling , Tino Fuchs , Christina Leinenbach
CPC分类号： G01L9/0073 , B81B2203/0127 , B81B2203/0315 , B81C1/00182 , G01L9/0042 , H04R19/005 , H04R19/04 , H04R31/00
摘要： A micromechanical component having a conductive substrate, an elastically deflectable diaphragm including at least one conductive layer, which is provided over a front side of the substrate, the conductive layer being electrically insulated from the substrate, a hollow space, which is provided between the substrate and the diaphragm and is filled with a medium, and a plurality of perforation openings, which run under the diaphragm through the substrate, the perforation openings providing access to the hollow space from a back surface of the substrate, so that a volume of the medium located in the hollow space may change when the diaphragm is deflected. Also described is a corresponding manufacturing method.
摘要翻译： 一种具有导电基底的微机械元件，包括至少一个导电层的弹性可偏转隔膜，该导电层设置在基板的前侧，导电层与基板电绝缘，中空空间设置在基板 和隔膜，并且填充有介质，以及多个穿孔，其在隔膜下方穿过基底，穿孔开口提供从基底的背面进入中空空间，使得一定体积的介质 当隔膜偏转时，位于中空空间中的位置可能会改变。 还描述了相应的制造方法。
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公开(公告)号：US07834409B2
公开(公告)日：2010-11-16
申请号：US11883671
申请日：2006-01-25
申请人： Frank Reichenbach , Franz Laermer , Silvia Kronmueller , Christoph Schelling , Tino Fuchs , Christina Leinenbach
发明人： Frank Reichenbach , Franz Laermer , Silvia Kronmueller , Christoph Schelling , Tino Fuchs , Christina Leinenbach
CPC分类号： G01L9/0073 , B81B2203/0127 , B81B2203/0315 , B81C1/00182 , G01L9/0042 , H04R19/005 , H04R19/04 , H04R31/00
摘要： A micromechanical component having a conductive substrate, an elastically deflectable diaphragm including at least one conductive layer, which is provided over a front side of the substrate, the conductive layer being electrically insulated from the substrate, a hollow space, which is provided between the substrate and the diaphragm and is filled with a medium, and a plurality of perforation openings, which run under the diaphragm through the substrate, the perforation openings providing access to the hollow space from a back surface of the substrate, so that a volume of the medium located in the hollow space may change when the diaphragm is deflected. Also described is a corresponding manufacturing method.
摘要翻译： 一种具有导电基底的微机械元件，包括至少一个导电层的弹性可偏转隔膜，该导电层设置在基板的前侧，导电层与基板电绝缘，中空空间设置在基板 和隔膜，并且填充有介质，以及多个穿孔，其在隔膜下方穿过基底，穿孔开口提供从基底的背面进入中空空间，使得一定体积的介质 当隔膜偏转时，位于中空空间中的位置可能会改变。 还描述了相应的制造方法。
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公开(公告)号：US20080311751A1
公开(公告)日：2008-12-18
申请号：US11658461
申请日：2005-07-01
IPC分类号： H01L21/311 , H01L21/306
CPC分类号： H01L21/32137 , B81C1/00476 , B81C1/00595 , H01L21/3065 , H01L21/30655
摘要： A method for etching a layer that is to be removed on a substrate, in which a Si1-xGex layer is the layer to be removed, this layer being removed, at least in areas, in gas phase etching with the aid of an etching gas, in particular ClF3. The etching behavior of the Si1-xGex layer can be controlled via the Ge portion in the Si1-xGex layer. The etching method is particularly well-suited for manufacturing self-supporting structures in a micromechanical sensor and for manufacturing such self-supporting structures in a closed hollow space, because the Si1-xGex layer, as a sacrificial layer or filling layer, is etched highly selectively relative to silicon.
摘要翻译： 在蚀刻气体辅助下，在气相蚀刻中至少在区域中蚀刻要除去的层的方法，其中Si1-xGex层是要去除的层，Si1-xGex层被去除的层， ，特别是ClF3。 可以通过Si1-xGex层中的Ge部分来控制Si1-xGex层的蚀刻行为。 蚀刻方法特别适用于在微机械传感器中制造自支撑结构，并且在封闭的中空空间中制造这种自支撑结构，因为作为牺牲层或填充层的Si1-xGex层被高度蚀刻 选择性地相对于硅。
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