公开(公告)号：US20130319138A1

公开(公告)日：2013-12-05

申请号：US13882767

申请日：2011-09-21

申请人： Tino Fuchs

发明人： Tino Fuchs

IPC分类号： B81B3/00 ,  B81C1/00 ,  G01L1/00

CPC分类号： B81B3/0018 ,  B81C1/00023 ,  G01L1/00 ,  G01L1/005 ,  G01L7/082 ,  G01L9/0041 ,  G01P15/12

摘要： A microelectromechanical sensor is configured to measure a force, a pressure, or the like. The sensor includes a substrate and a measuring element. The measuring element includes at least two electrically conductive regions, and at least one of the electrically conductive regions is at least partly connected to the substrate. The sensor also includes at least one changing region, and the changing region lies at least partly between the electrically conductive regions. The changing region is configured in a substantially electrically insulating manner in an unloaded state and in a substantially electrically conductive manner in a loaded state.

摘要翻译： 微机电传感器被配置成测量力，压力等。 传感器包括基板和测量元件。 测量元件包括至少两个导电区域，并且至少一个导电区域至少部分地连接到基板。 传感器还包括至少一个变化区域，并且变化区域至少部分地位于导电区域之间。 改变区域在负载状态下以基本上电绝缘的方式配置，并且基本上是导电的。

公开(公告)号：US08529781B2

公开(公告)日：2013-09-10

申请号：US12308522

申请日：2007-05-04

申请人： Tino Fuchs ,  Christina Leinenbach

发明人： Tino Fuchs ,  Christina Leinenbach

IPC分类号： H01L21/311 ,  H01L21/302 ,  C03C17/09 ,  C03C3/32 ,  H05H1/24 ,  B01D71/00

CPC分类号： B81C1/0069 ,  B01D61/243 ,  B01D67/003 ,  B01D67/0058 ,  B01D71/02 ,  B01D2323/35 ,  B01D2325/028 ,  B01D2325/08 ,  B01D2325/26 ,  B81B2201/10 ,  B81C2201/0115 ,  Y10T428/24893

摘要： A method for producing a component, and a component, in particular a micromechanical and/or microfluidic and/or microelectronic component, is provided, the component including at least one patterned material region, and in a first step the patterned material region is produced in that microparticles of a first material are embedded in a matrix of a second material, and in a second step the patterned material region is rendered porous by etching using a dry etching method or a gas-phase etching method.

摘要翻译： 提供了一种用于制造组件和组件，特别是微机械和/或微流体和/或微电子部件的方法，所述部件包括至少一个图案化材料区域，并且在第一步骤中，图案化材料区域 将第一材料的微粒嵌入第二材料的基体中，在第二步骤中，通过使用干蚀刻法或气相蚀刻法蚀刻图案化材料区域而使多孔化。

公开(公告)号：US20120126799A1

公开(公告)日：2012-05-24

申请号：US13321759

申请日：2010-07-26

申请人： Frank Schatz ,  Tino Fuchs ,  Ando Feyh

发明人： Frank Schatz ,  Tino Fuchs ,  Ando Feyh

IPC分类号： G01N27/72 ,  H01F41/00

CPC分类号： G01R33/04 ,  H01F27/2804 ,  Y10T29/49073

摘要： A magnetometer is described, having a substrate and a magnetic core, the substrate having an excitation coil for generating a magnetic flux in the magnetic core; and the excitation coil having a coil cross section, which is aligned generally perpendicular to a main plane of extension of the substrate. The magnetic core is situated outside the coil cross section.

摘要翻译： 描述了具有基板和磁芯的磁力计，所述基板具有用于在磁芯中产生磁通的励磁线圈; 并且所述激励线圈具有线圈横截面，所述线圈横截面大致垂直于所述衬底的主平面延伸。 磁芯位于线圈横截面外。

公开(公告)号：US07851248B2

公开(公告)日：2010-12-14

申请号：US12305150

申请日：2007-08-21

申请人： Silvia Kronmueller ,  Tino Fuchs ,  Ando Feyh ,  Christina Leinenbach ,  Marco Lammer

发明人： Silvia Kronmueller ,  Tino Fuchs ,  Ando Feyh ,  Christina Leinenbach ,  Marco Lammer

IPC分类号： H01L21/00

CPC分类号： B81C1/00333 ,  B81C2201/0115 ,  B81C2201/0132 ,  B81C2203/0136 ,  B81C2203/0145

摘要： A capping technology is provided in which, despite the fact that structures which are surrounded by a silicon-germanium filling layer are exposed using ClF3 etching through micropores in the silicon cap, an etching attack on the silicon cap is prevented, namely, either by particularly selective (approximately 10,000:1 or higher) adjustment of the etching process itself, or by using the finding that the oxide of a germanium-rich layer, in contrast to oxidized porous silicon, is not stable but instead may be easily dissolved, to protect the silicon cap.

摘要翻译： 提供了一种封盖技术，尽管事实上，利用ClF3蚀刻通过硅盖中的微孔暴露由硅 - 锗填充层包围的结构，但是防止了对硅帽的蚀刻攻击，即特别地 选择性（大约10,000:1或更高）调整蚀刻工艺本身，或通过使用与氧化多孔硅相反的富锗层的氧化物不稳定但可以容易地溶解的发现来保护 硅帽。

公开(公告)号：US09030198B2

公开(公告)日：2015-05-12

申请号：US13321759

申请日：2010-07-26

申请人： Frank Schatz ,  Tino Fuchs ,  Ando Feyh

发明人： Frank Schatz ,  Tino Fuchs ,  Ando Feyh

IPC分类号： G01N27/72 ,  G01R33/04 ,  H01F27/28

CPC分类号： G01R33/04 ,  H01F27/2804 ,  Y10T29/49073

摘要： A magnetometer is described, having a substrate and a magnetic core, the substrate having an excitation coil for generating a magnetic flux in the magnetic core; and the excitation coil having a coil cross section, which is aligned generally perpendicular to a main plane of extension of the substrate. The magnetic core is situated outside the coil cross section.

摘要翻译： 描述了具有基板和磁芯的磁力计，所述基板具有用于在磁芯中产生磁通的励磁线圈; 并且所述激励线圈具有线圈横截面，所述线圈横截面大致垂直于所述衬底的主平面延伸。 磁芯位于线圈横截面外。

公开(公告)号：US08946090B2

公开(公告)日：2015-02-03

申请号：US12452692

申请日：2008-07-02

申请人： Volker Becker ,  Franz Laermer ,  Tino Fuchs ,  Christina Leinenbach

发明人： Volker Becker ,  Franz Laermer ,  Tino Fuchs ,  Christina Leinenbach

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/306 ,  H01L21/02 ,  B81C1/00 ,  H01L21/3213

CPC分类号： H01L21/3065 ,  B81C1/00531 ,  B81C1/00595 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01L21/02019 ,  H01L21/30621 ,  H01L21/32135

摘要： A method for selective etching of an SiGe mixed semiconductor layer on a silicon semiconductor substrate by dry chemical etching of the SiGe mixed semiconductor layer with the aid of an etching gas selected from the group including ClF3 and/or ClF5, a gas selected from the group including Cl2 and/or HCl being added to the etching gas.

摘要翻译： 借助于选自ClF3和/或ClF5的蚀刻气体，通过SiGe混合半导体层的干法化学蚀刻来选择性地蚀刻硅半导体衬底上的SiGe混合半导体层的方法， 包括添加到蚀刻气体中的Cl 2和/或HCl。

公开(公告)号：US08501516B2

公开(公告)日：2013-08-06

申请号：US12740607

申请日：2008-10-13

申请人： Franz Laermer ,  Tino Fuchs ,  Christina Leinenbach

发明人： Franz Laermer ,  Tino Fuchs ,  Christina Leinenbach

IPC分类号： H01L21/306

CPC分类号： B81C1/00103 ,  B81B2203/0384 ,  B81C2201/0136

摘要： A method for producing micromechanical patterns having a relief-like sidewall outline shape or an angle of inclination that is able to be set, the micromechanical patterns being etched out of a SiGe mixed semiconductor layer that is present on or deposited on a silicon semiconductor substrate, by dry chemical etching of the SiGe mixed semiconductor layer; the sidewall outline shape of the micromechanical pattern being developed by varying the germanium proportion in the SiGe mixed semiconductor layer that is to be etched; a greater germanium proportion being present in regions that are to be etched more strongly; the variation in the germanium proportion in the SiGe mixed semiconductor layer being set by a method selected from the group including depositing a SiGe mixed semiconductor layer having varying germanium content, introducing germanium into a silicon semiconductor layer or a SiGe mixed semiconductor layer, introducing silicon into a germanium layer or an SiGe mixed semiconductor layer and/or by thermal oxidation of a SiGe mixed semiconductor layer.

摘要翻译： 一种用于生产具有凸起状侧壁轮廓形状或能够被设定的倾斜角的微机械图案的方法，从存在于或沉积在硅半导体衬底上的SiGe混合半导体层中蚀刻微机械图案， 通过干法化学蚀刻SiGe混合半导体层; 通过改变要蚀刻的SiGe混合半导体层中的锗比例来显影微机械图案的侧壁轮廓形状; 存在于要被更强蚀刻的区域中更大的锗比例; SiGe混合半导体层中的锗比例的变化通过选自包括沉积具有不同锗含量的SiGe混合半导体层，将锗引入到硅半导体层或SiGe混合半导体层中的方法来设置，将硅引入 锗层或SiGe混合半导体层和/或通过SiGe混合半导体层的热氧化。

公开(公告)号：US20110107817A1

公开(公告)日：2011-05-12

申请号：US12941484

申请日：2010-11-08

申请人： Andreas Krauss ,  Tino Fuchs

发明人： Andreas Krauss ,  Tino Fuchs

IPC分类号： G01N25/18 ,  G01R27/08

CPC分类号： G01N27/04 ,  G01N15/0656 ,  G01N27/18

摘要： A particle sensor including a diaphragm, a diaphragm heater, and at least two measuring electrodes situated on the diaphragm, for electrical conductivity measurement, the diaphragm having a thickness of less than or equal to 50 μm, in order to allow a calorimetric particle quantity determination.

摘要翻译： 一种颗粒传感器，包括隔膜，隔膜加热器和位于隔膜上的至少两个测量电极，用于电导率测量，隔膜具有小于或等于50μm的厚度，以便允许量热粒子量确定 。

公开(公告)号：US20090278214A1

公开(公告)日：2009-11-12

申请号：US12506219

申请日：2009-07-20

申请人： Markus Ulm ,  Brian Stark ,  Matthias Metz ,  Tino Fuchs ,  Franz Laermer ,  Silvia Kronmueller

发明人： Markus Ulm ,  Brian Stark ,  Matthias Metz ,  Tino Fuchs ,  Franz Laermer ,  Silvia Kronmueller

IPC分类号： H01L29/84

CPC分类号： B81C1/0096 ,  B81B3/0005

摘要： An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450 C is described. The coating is applied after device release but before sealing vents in the encapsulation layer. Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.

摘要翻译： 描述了一种封装的MEMS工艺，其包括在高于450℃的温度下在加工步骤下稳定的高温抗静电涂层。 涂层在器件释放后，但在封装层封口之前应用。 或者，可以在封装之前将抗静电涂层直接施加到释放的装置。

公开(公告)号：US07898046B2

公开(公告)日：2011-03-01

申请号：US12506219

申请日：2009-07-20

申请人： Markus Ulm ,  Brian Stark ,  Matthias Metz ,  Tino Fuchs ,  Franz Laermer ,  Silvia Kronmueller

发明人： Markus Ulm ,  Brian Stark ,  Matthias Metz ,  Tino Fuchs ,  Franz Laermer ,  Silvia Kronmueller

IPC分类号： H01L21/00

CPC分类号： B81C1/0096 ,  B81B3/0005

摘要： An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450 C is described. The coating is applied after device release but before sealing vents in the encapsulation layer. Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.

摘要翻译： 描述了一种封装的MEMS工艺，其包括在高于450℃的温度下在加工步骤下稳定的高温抗静电涂层。 涂层在器件释放后，但在封装层封口之前应用。 或者，可以在封装之前将抗静电涂层直接施加到释放的装置。