Semiconductor device
    1.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US20060289905A1

    公开(公告)日:2006-12-28

    申请号:US11442352

    申请日:2006-05-30

    IPC分类号: H01L29/76

    摘要: A semiconductor device comprising at least one FET formed on the semiconductor substrate, wherein the FET comprises a source region, a drain region, a channel region formed between the source and drain regions and including a plurality of projected epitaxial silicon regions arranged in a width direction of the channel region, each of the projected epitaxial silicon regions having a triangular ridge portion, a gate insulating film formed on the channel region, and a gate electrode formed on the gate insulating film.

    摘要翻译: 一种半导体器件,包括形成在所述半导体衬底上的至少一个FET,其中所述FET包括源极区,漏极区,形成在所述源极和漏极区之间的沟道区,并且包括沿宽度方向布置的多个投影外延硅区 的沟道区域,每个投影的外延硅区域具有三角形脊部分,形成在沟道区域上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。

    Semiconductor device
    3.
    发明申请
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号:US20060145228A1

    公开(公告)日:2006-07-06

    申请号:US11311268

    申请日:2005-12-20

    IPC分类号: H01L29/94

    摘要: A semiconductor memory device comprising a semiconductor substrate, element isolating regions formed on the semiconductor substrate, an element forming region provided between the element isolating regions on the semiconductor substrate, the element forming region having a protruding portion, a transistor having a channel formed in the protruding portion of the element forming region, and a capacitor formed in or on the semiconductor substrate to be connected to the transistor, wherein the protruding portion in the element forming region includes first and second inclined and opposed planes arranged along a channel width direction of the transistor, and an upper plane provided between the first and second inclined planes.

    摘要翻译: 一种半导体存储器件,包括半导体衬底,形成在半导体衬底上的元件隔离区域,设置在半导体衬底上的元件隔离区域之间的元件形成区域,具有突出部分的元件形成区域, 所述元件形成区域的突出部分和形成在所述半导体衬底中或与所述晶体管连接的电容器,其中所述元件形成区域中的所述突出部分包括沿着所述晶体管的沟道宽度方向布置的第一和第二倾斜和相对的平面 晶体管,以及设置在第一和第二倾斜平面之间的上平面。

    Double-gate structure fin-type transistor
    5.
    发明授权
    Double-gate structure fin-type transistor 失效
    双栅结构鳍型晶体管

    公开(公告)号:US06998676B2

    公开(公告)日:2006-02-14

    申请号:US10744756

    申请日:2003-12-23

    IPC分类号: H01L29/76

    摘要: A semiconductor device has a fin-type transistor formed in a projecting semiconductor region. The projecting semiconductor region is formed on a major surface of a semiconductor substrate of a first conductivity type. A gate electrode of the fin-type transistor is formed on at least opposed side surfaces of the projecting semiconductor region, with a gate insulating film interposed. Source and drain regions are formed in the projecting semiconductor region such that the source and drain regions sandwich the gate electrode. A channel region of the first conductivity type is formed in the projecting semiconductor region between the source and drain regions. The following relationship is established: TFIN≧(∈/4qNCH)1/2 where TFIN is a width of the projecting semiconductor region, NCH is an impurity concentration in the channel region, ∈ is a dielectric constant of a semiconductor material of the projecting semiconductor region, and q is an elementary charge.

    摘要翻译: 半导体器件具有形成在突出半导体区域中的鳍型晶体管。 突出的半导体区域形成在第一导电类型的半导体衬底的主表面上。 翅片型晶体管的栅电极形成在突出半导体区域的至少相对的侧表面上,并插入栅极绝缘膜。 源极和漏极区域形成在突出的半导体区域中,使得源极和漏极区域夹着栅电极。 在源极和漏极区域之间的突出半导体区域中形成第一导电类型的沟道区域。 建立以下关系

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US07391068B2

    公开(公告)日:2008-06-24

    申请号:US11442352

    申请日:2006-05-30

    IPC分类号: H01L29/00

    摘要: A semiconductor device comprising at least one FET formed on the semiconductor substrate, wherein the FET comprises a source region, a drain region, a channel region formed between the source and drain regions and including a plurality of projected epitaxial silicon regions arranged in a width direction of the channel region, each of the projected epitaxial silicon regions having a triangular ridge portion, a gate insulating film formed on the channel region, and a gate electrode formed on the gate insulating film.

    摘要翻译: 一种半导体器件,包括形成在所述半导体衬底上的至少一个FET,其中所述FET包括源极区,漏极区,形成在所述源极和漏极区之间的沟道区,并且包括沿宽度方向布置的多个投影外延硅区 的沟道区域,每个投影的外延硅区域具有三角形脊部分,形成在沟道区域上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。

    Image processing apparatus
    7.
    发明授权
    Image processing apparatus 有权
    图像处理装置

    公开(公告)号:US08786894B2

    公开(公告)日:2014-07-22

    申请号:US13051032

    申请日:2011-03-18

    申请人: Masaki Kondo

    发明人: Masaki Kondo

    摘要: An image processing apparatus causes a printing executing section to perform a printing process using color-materials, the image processing apparatus includes: a first processing unit that performs a first image-processing by processing original image data in order to generate first processed image data; and a supplying unit, wherein the first processing unit includes: a calculating unit that calculates an index value relating an edge-intensity about a target pixel in object image data; and a correcting unit that corrects a value of the target pixel based on the index value of the edge-intensity, wherein the correcting unit corrects the value of the target pixel such that print-density of the target pixel increase if the target pixel is a first pixel, and wherein the correcting unit corrects the value of the target pixel such that print-density of the target pixel decrease if the target pixel is a second pixel.

    摘要翻译: 图像处理装置使打印执行部使用彩色材料进行打印处理,图像处理装置包括:第一处理单元,其通过处理原始图像数据进行第一图像处理,以生成第一处理图像数据; 以及供给单元,其中,所述第一处理单元包括:计算单元,计算与对象图像数据中的关于目标像素的边缘强度相关的指标值; 以及校正单元,其基于所述边缘强度的所述指标值来校正所述目标像素的值,其中,所述校正单元校正所述目标像素的值,使得所述目标像素的打印浓度增加,如果所述目标像素为 第一像素,并且其中,所述校正单元校正所述目标像素的值,使得如果所述目标像素是第二像素,则所述目标像素的打印浓度降低。

    Engine-driven cutter
    8.
    发明授权

    公开(公告)号:US08595944B2

    公开(公告)日:2013-12-03

    申请号:US13033956

    申请日:2011-02-24

    IPC分类号: B23D45/16 B23Q11/06

    摘要: A handheld engine-driven cutter is provided with a disk blade and an engine that drives the disk blade, a filter through which air provided to the four-stroke engine passes, a carburetor that mixes fuel and the air that passed through the filter, a casing that houses the filter and the carburetor, at least one operation member that is operated by a user and connected to the carburetor via a link, and a shaft that is connected to the casing and supports the operation member in a swingable manner. A shaft receiving groove that supports the shaft is formed in the casing.

    Image processor
    10.
    发明授权
    Image processor 有权
    图像处理器

    公开(公告)号:US08466929B2

    公开(公告)日:2013-06-18

    申请号:US12414343

    申请日:2009-03-30

    IPC分类号: G09G5/02 G06F17/00 G06F15/00

    摘要: An image processor includes an extracting unit, an assigning unit, and an output unit. The extracting unit extracts at least one set of frame image data from the plurality of sets of frame image data included in one of the at least one set of moving image data. The assigning unit assigns a set of control data to each of the at least one set of frame image data extracted by the extracting unit. The output unit outputs an image list including a moving image index, the moving image index having an index frame image and information with respect to the set of control data, the index frame image being either one of a frame image corresponding to the at least one set of frame image data assigned with the set of control data and a resized frame image resized from the frame image.

    摘要翻译: 图像处理器包括提取单元,分配单元和输出单元。 提取单元从包括在至少一组运动图像数据中的多组帧图像数据中提取至少一组帧图像数据。 分配单元将提取单元提取的至少一组帧图像数据中的每一个分配一组控制数据。 输出单元输出包括运动图像索引的图像列表,具有索引帧图像的运动图像索引和关于该组控制数据的信息,索引帧图像是与至少一个对应的帧图像中的一个 分配有该组控制数据的一组帧图像数据和从帧图像改变大小的调整大小的帧图像。