摘要:
A semiconductor device comprising at least one FET formed on the semiconductor substrate, wherein the FET comprises a source region, a drain region, a channel region formed between the source and drain regions and including a plurality of projected epitaxial silicon regions arranged in a width direction of the channel region, each of the projected epitaxial silicon regions having a triangular ridge portion, a gate insulating film formed on the channel region, and a gate electrode formed on the gate insulating film.
摘要:
A nonvolatile semiconductor memory device includes: a semiconductor region; device isolation regions placed in the semiconductor region and extending in a column direction; a semiconductor layer placed on the semiconductor region and between the device isolation regions, and having a convex shape in cross section along a row direction; source/drain regions placed in the semiconductor layer and spaced from each other; a gate insulating film placed on the semiconductor layer between the source/drain regions; a floating gate electrode layer placed on the gate insulating film; an intergate insulating film placed on the floating gate electrode layer and upper surfaces of the device isolation regions; and a control gate electrode layer placed on the intergate insulating film and extending in the row direction.
摘要:
A semiconductor memory device comprising a semiconductor substrate, element isolating regions formed on the semiconductor substrate, an element forming region provided between the element isolating regions on the semiconductor substrate, the element forming region having a protruding portion, a transistor having a channel formed in the protruding portion of the element forming region, and a capacitor formed in or on the semiconductor substrate to be connected to the transistor, wherein the protruding portion in the element forming region includes first and second inclined and opposed planes arranged along a channel width direction of the transistor, and an upper plane provided between the first and second inclined planes.
摘要:
A nonvolatile semiconductor memory device includes: a semiconductor region; device isolation regions placed in the semiconductor region and extending in a column direction; a semiconductor layer placed on the semiconductor region and between the device isolation regions, and having a convex shape in cross section along a row direction; source/drain regions placed in the semiconductor layer and spaced from each other; a gate insulating film placed on the semiconductor layer between the source/drain regions; a floating gate electrode layer placed on the gate insulating film; an intergate insulating film placed on the floating gate electrode layer and upper surfaces of the device isolation regions; and a control gate electrode layer placed on the intergate insulating film and extending in the row direction.
摘要:
A semiconductor device has a fin-type transistor formed in a projecting semiconductor region. The projecting semiconductor region is formed on a major surface of a semiconductor substrate of a first conductivity type. A gate electrode of the fin-type transistor is formed on at least opposed side surfaces of the projecting semiconductor region, with a gate insulating film interposed. Source and drain regions are formed in the projecting semiconductor region such that the source and drain regions sandwich the gate electrode. A channel region of the first conductivity type is formed in the projecting semiconductor region between the source and drain regions. The following relationship is established: TFIN≧(∈/4qNCH)1/2 where TFIN is a width of the projecting semiconductor region, NCH is an impurity concentration in the channel region, ∈ is a dielectric constant of a semiconductor material of the projecting semiconductor region, and q is an elementary charge.
摘要:
A semiconductor device comprising at least one FET formed on the semiconductor substrate, wherein the FET comprises a source region, a drain region, a channel region formed between the source and drain regions and including a plurality of projected epitaxial silicon regions arranged in a width direction of the channel region, each of the projected epitaxial silicon regions having a triangular ridge portion, a gate insulating film formed on the channel region, and a gate electrode formed on the gate insulating film.
摘要:
An image processing apparatus causes a printing executing section to perform a printing process using color-materials, the image processing apparatus includes: a first processing unit that performs a first image-processing by processing original image data in order to generate first processed image data; and a supplying unit, wherein the first processing unit includes: a calculating unit that calculates an index value relating an edge-intensity about a target pixel in object image data; and a correcting unit that corrects a value of the target pixel based on the index value of the edge-intensity, wherein the correcting unit corrects the value of the target pixel such that print-density of the target pixel increase if the target pixel is a first pixel, and wherein the correcting unit corrects the value of the target pixel such that print-density of the target pixel decrease if the target pixel is a second pixel.
摘要:
A handheld engine-driven cutter is provided with a disk blade and an engine that drives the disk blade, a filter through which air provided to the four-stroke engine passes, a carburetor that mixes fuel and the air that passed through the filter, a casing that houses the filter and the carburetor, at least one operation member that is operated by a user and connected to the carburetor via a link, and a shaft that is connected to the casing and supports the operation member in a swingable manner. A shaft receiving groove that supports the shaft is formed in the casing.
摘要:
A coupling member can releasably couple a blade protector to a tool body of a gardening tool. The coupling member is movably and non-removably coupled to one of the tool body and the protector.
摘要:
An image processor includes an extracting unit, an assigning unit, and an output unit. The extracting unit extracts at least one set of frame image data from the plurality of sets of frame image data included in one of the at least one set of moving image data. The assigning unit assigns a set of control data to each of the at least one set of frame image data extracted by the extracting unit. The output unit outputs an image list including a moving image index, the moving image index having an index frame image and information with respect to the set of control data, the index frame image being either one of a frame image corresponding to the at least one set of frame image data assigned with the set of control data and a resized frame image resized from the frame image.