公开(公告)号：US09447518B2

公开(公告)日：2016-09-20

申请号：US13819284

申请日：2011-08-24

申请人： Masaru Hori ,  Hiroshi Amano ,  Hiroyuki Kano ,  Shoji Den ,  Koji Yamakawa

发明人： Masaru Hori ,  Hiroshi Amano ,  Hiroyuki Kano ,  Shoji Den ,  Koji Yamakawa

IPC分类号： C23C16/00 ,  H01L21/326 ,  C30B23/02 ,  H05H1/46 ,  H01J37/32 ,  C30B23/06 ,  H05H1/30 ,  H05H1/24

CPC分类号： H01J37/321 ,  C30B23/02 ,  C30B23/066 ,  C30B25/14 ,  C30B29/403 ,  H01J37/3178 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/3266 ,  H01J2237/006 ,  H01J2237/083 ,  H01J2237/327 ,  H01J2237/3321 ,  H05H1/30 ,  H05H1/46 ,  H05H2001/2462 ,  H05H2001/2468

摘要： A radical generator includes a supply tube, a plasma-generating tube, a coil winding about an outer circumference of the plasma-generating tube, for generating an inductively coupled plasma in the plasma-generating tube, an electrode for generating a capacitively coupled plasma in the plasma-generating tube and adding the capacitively coupled plasma to the inductively coupled plasma, and a parasitic-plasma-preventing tube including a dielectric material which extends from a bottom of the plasma-generating tube to an opening of the supply tube in a space between the bottom and the opening, and a tip part thereof is inserted into the supply tube to cover an inner wall of the supply tube for preventing a generation of a parasitic plasma between the electrode and the inner wall of the supply tube.

摘要翻译： 自由基发生器包括供给管，等离子体产生管，围绕等离子体产生管的外圆周的线圈绕组，用于在等离子体发生管中产生电感耦合等离子体，用于产生电容耦合等离子体的电极 等离子体发生管，并将电容耦合等离子体添加到电感耦合等离子体;以及寄生等离子体防止管，其包括从等离子体产生管的底部延伸到供应管的开口的电介质材料 在底部和开口之间，并且其顶端部分插入供应管中以覆盖供应管的内壁，以防止在电极和供应管的内壁之间产生寄生等离子体。

公开(公告)号：US20130220223A1

公开(公告)日：2013-08-29

申请号：US13819284

申请日：2011-08-24

申请人： Masaru Hori ,  Hiroshi Amano ,  Hiroyuki Kano ,  Shoji Den ,  Koji Yamakawa

发明人： Masaru Hori ,  Hiroshi Amano ,  Hiroyuki Kano ,  Shoji Den ,  Koji Yamakawa

IPC分类号： C30B23/02 ,  H05H1/46

CPC分类号： H01J37/321 ,  C30B23/02 ,  C30B23/066 ,  C30B25/14 ,  C30B29/403 ,  H01J37/3178 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/3266 ,  H01J2237/006 ,  H01J2237/083 ,  H01J2237/327 ,  H01J2237/3321 ,  H05H1/30 ,  H05H1/46 ,  H05H2001/2462 ,  H05H2001/2468

摘要： [Object] To provide a radical generator which can produce radicals at higher density.[Means for Solution] The radical generator includes a supply tube 10 made of SUS, a hollow cylindrical plasma-generating tube 11 which is connected to the supply tube 10 and which is made of pyrolytic boron nitride (PBN). A cylindrical CCP electrode 13 is disposed outside the plasma-generating tube 11. A coil 12 is provided so as to wind about the outer circumference of the plasma-generating tube at the downstream end of the CCP electrode 13. A parasitic-plasma-preventing tube 15 made of a ceramic material is inserted into an opening of the supply tube 10 at the connection site between the supply tube 10 and the plasma-generating tube 11.

摘要翻译： 提供一种能够以更高密度产生自由基的自由基发生器。 [解决方案]自由基发生器包括由SUS制成的供应管10，连接到供应管10并由热解氮化硼（PBN）制成的中空圆柱形等离子体产生管11。 一个圆柱形的CCP电极13设置在等离子体发生管11的外部。线圈12设置成在CCP电极13的下游端围绕等离子体产生管的外周缠绕。一个等离子体等离子体防止 在供给管10和等离子体产生管11之间的连接部位插入由陶瓷材料制成的管15供给管10的开口。

公开(公告)号：US20130027697A1

公开(公告)日：2013-01-31

申请号：US13578171

申请日：2011-02-08

申请人： Masaru Hori ,  Masafumi Ito ,  Takayuki Ohta ,  Hiroyuki Kano ,  Koji Yamakawa

发明人： Masaru Hori ,  Masafumi Ito ,  Takayuki Ohta ,  Hiroyuki Kano ,  Koji Yamakawa

IPC分类号： H01J61/09 ,  G01J3/00

CPC分类号： H01J65/046 ,  G01N21/3103 ,  H05H1/2406 ,  H05H2001/2412

摘要： The multi-micro hollow cathode light source has a cathode plate, an insulation plate, an anode plate, and metal pieces. The insulation plate is sandwiched by the cathode plate and the anode plate. The cathode plate is made of copper. The centers of the cathode plate, insulation plate, and anode plate, are provided with holes, respectively. The holes form a penetrating though-hole. Linear slots are disposed in the cathode plate continuously extending from the hole in a cross shape. Each slot penetrates the cathode plate. Four metal pieces made of materials different from one another are inserted and buried in the four slots.

摘要翻译： 多微孔中空阴极光源具有阴极板，绝缘板，阳极板和金属片。 绝缘板由阴极板和阳极板夹持。 阴极板由铜制成。 阴极板，绝缘板和阳极板的中心分别设有孔。 孔形成贯穿孔。 线状槽设置在从十字形状连续延伸的阴极板中。 每个槽都穿过阴极板。 四个由彼此不同的材料制成的金属片插入并埋在四个槽中。

公开(公告)号：US08638034B2

公开(公告)日：2014-01-28

申请号：US13578171

申请日：2011-02-08

申请人： Masaru Hori ,  Masafumi Ito ,  Takayuki Ohta ,  Hiroyuki Kano ,  Koji Yamakawa

发明人： Masaru Hori ,  Masafumi Ito ,  Takayuki Ohta ,  Hiroyuki Kano ,  Koji Yamakawa

IPC分类号： H01J17/16

CPC分类号： H01J65/046 ,  G01N21/3103 ,  H05H1/2406 ,  H05H2001/2412

摘要： The multi-micro hollow cathode light source has a cathode plate, an insulation plate, an anode plate, and metal pieces. The insulation plate is sandwiched by the cathode plate and the anode plate. The cathode plate is made of copper. The centers of the cathode plate, insulation plate, and anode plate, are provided with holes, respectively. The holes form a penetrating though-hole. Linear slots are disposed in the cathode plate continuously extending from the hole in a cross shape. Each slot penetrates the cathode plate. Four metal pieces made of materials different from one another are inserted and buried in the four slots.

摘要翻译： 多微孔中空阴极光源具有阴极板，绝缘板，阳极板和金属片。 绝缘板由阴极板和阳极板夹持。 阴极板由铜制成。 阴极板，绝缘板和阳极板的中心分别设有孔。 孔形成贯穿孔。 线状槽设置在从十字形状连续延伸的阴极板中。 每个槽都穿过阴极板。 四个由彼此不同的材料制成的金属片插入并埋在四个槽中。

公开(公告)号：US08410529B2

公开(公告)日：2013-04-02

申请号：US13234608

申请日：2011-09-16

申请人： Daisuke Ikeno ,  Koji Yamakawa ,  Katsuaki Natori ,  Yasuyuki Sonoda

发明人： Daisuke Ikeno ,  Koji Yamakawa ,  Katsuaki Natori ,  Yasuyuki Sonoda

IPC分类号： H01L29/66

CPC分类号： H01L27/228 ,  B82Y40/00 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a semiconductor device, includes a magneto resistive element including a first magnetic layer, a first interface magnetic layer, a nonmagnetic layer, a second interface magnetic layer and a second magnetic layer as a stacked structure in order; and a metal layer including first metal atoms, second metal atoms and boron atoms, the metal layer being provided at least one region selected from under the first magnetic, between the first magnetic layer and the first interface magnetic layer, between the second interface magnetic layer and the second magnetic layer, and upper the second magnetic layer.

摘要翻译： 根据一个实施例，半导体器件依次包括第一磁性层，第一界面磁性层，非磁性层，第二界面磁性层和第二磁性层作为堆叠结构的磁阻元件; 以及金属层，其包括第一金属原子，第二金属原子和硼原子，所述金属层设置在所述第一磁性层和所述第一界面磁性层之间的所述第一磁性体的下方的至少一个区域之间，所述第二界面磁性层 和第二磁性层，并且在第二磁性层上方。

公开(公告)号：US07527984B2

公开(公告)日：2009-05-05

申请号：US11482909

申请日：2006-07-10

申请人： Koji Yamakawa ,  Soichi Yamazaki

发明人： Koji Yamakawa ,  Soichi Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L28/65 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/57

摘要： A semiconductor device according to an embodiment of the present invention includes a semiconductor substrate; a ferroelectric capacitor arranged above the semiconductor substrate; an insulating protecting film covering a side surface of the ferroelectric capacitor; and a side wall film formed on a side surface of the ferroelectric capacitor through the protecting film and giving tensile stress to the ferroelectric capacitor in a direction of an electric field applied to the ferroelectric capacitor.

摘要翻译： 根据本发明实施例的半导体器件包括半导体衬底; 布置在所述半导体衬底上方的铁电电容器; 覆盖所述强电介质电容器的侧面的绝缘保护膜; 以及侧壁膜，其通过保护膜形成在铁电电容器的侧面上，并且在施加到铁电电容器的电场的方向上对强电介质电容器施加拉伸应力。

公开(公告)号：US20070126338A1

公开(公告)日：2007-06-07

申请号：US11671302

申请日：2007-02-05

申请人： Kaoru KOIWA ,  Koji Yamakawa

发明人： Kaoru KOIWA ,  Koji Yamakawa

IPC分类号： H01J63/04 ,  H01J1/00

CPC分类号： H01J31/127 ,  H01J1/316 ,  H01J2201/306

摘要： A PED is constituted by arranging signal lines and scanning lines, in the form of a matrix, on the inner surface of a rear substrate and by forming PZT films, which are used as electron-emitting members, at the intersections of the signal lines and the scanning lines. When a voltage is applied between element electrodes connected to the lines, each PZT film emits an electron beam having a cross-section shape that depends on the shape of the PZT film.

摘要翻译： PED是通过将矩阵形式的信号线和扫描线布置在后基板的内表面上，并且在信号线与信号线的交点处形成用作电子发射部件的PZT膜构成的， 扫描线。 当在连接到线路的元件电极之间施加电压时，每个PZT膜发射具有取决于PZT膜的形状的横截面形状的电子束。

公开(公告)号：US20070080383A1

公开(公告)日：2007-04-12

申请号：US11482909

申请日：2006-07-10

申请人： Koji Yamakawa ,  Soichi Yamazaki

发明人： Koji Yamakawa ,  Soichi Yamazaki

IPC分类号： H01L29/94

CPC分类号： H01L28/65 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/57

摘要： A semiconductor device according to an embodiment of the present invention includes a semiconductor substrate; a ferroelectric capacitor arranged above the semiconductor substrate; an insulating protecting film covering a side surface of the ferroelectric capacitor; and a side wall film formed on a side surface of the ferroelectric capacitor through the protecting film and giving tensile stress to the ferroelectric capacitor in a direction of an electric field applied to the ferroelectric capacitor.

摘要翻译： 根据本发明实施例的半导体器件包括半导体衬底; 布置在所述半导体衬底上方的铁电电容器; 覆盖所述强电介质电容器的侧面的绝缘保护膜; 以及侧壁膜，其通过保护膜形成在铁电电容器的侧面上，并且在施加到铁电电容器的电场的方向上对强电介质电容器施加拉伸应力。

公开(公告)号：US07151288B2

公开(公告)日：2006-12-19

申请号：US10678061

申请日：2003-10-06

申请人： Keitaro Imai ,  Koji Yamakawa

发明人： Keitaro Imai ,  Koji Yamakawa

IPC分类号： H01L29/51

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/75

摘要： A semiconductor device comprises a semiconductor substrate, a conductive plug electrically connected to the semiconductor substrate, a silicon carbide film provided on the conductive plug, a metal compound film provided on the silicon carbide film and containing a metal carbide, and an electrode provided on the metal compound film.

摘要翻译： 半导体器件包括半导体衬底，与半导体衬底电连接的导电插塞，设置在导电插塞上的碳化硅膜，设置在碳化硅膜上并含有金属碳化物的金属化合物膜，以及设置在该半导体衬底上的电极 金属化合物膜。

公开(公告)号：US06995417B2

公开(公告)日：2006-02-07

申请号：US10924854

申请日：2004-08-25

申请人： Soichi Yamazaki ,  Koji Yamakawa

发明人： Soichi Yamazaki ,  Koji Yamakawa

IPC分类号： H01L27/108

CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L28/57 ,  H01L28/65

摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, an insulating region provided on the semiconductor substrate, a first capacitor provided above the insulating region, a second capacitor provided above the insulating region and adjacent to the first capacitor, a conductive hydrogen-barrier film which prevents diffusion of hydrogen into the first and second capacitors and connects a bottom electrode of the first capacitor with a bottom electrode of the second capacitor, the conductive hydrogen-barrier film having a first portion interposing between the insulating region and the first capacitor and between the insulating region and the second capacitor.

摘要翻译： 公开了一种半导体器件，包括半导体衬底，设置在半导体衬底上的绝缘区域，设置在绝缘区域上方的第一电容器，设置在绝缘区域上方并与第一电容器相邻的第二电容器，导电阻氧膜， 防止氢扩散到第一和第二电容器中，并且将第一电容器的底部电极与第二电容器的底部电极连接，导电阻氧膜具有介于绝缘区域和第一电容器之间的第一部分， 绝缘区域和第二电容器。