公开(公告)号：US06581258B2

公开(公告)日：2003-06-24

申请号：US09851063

申请日：2001-05-08

申请人： Masayuki Yoneda ,  Yoshihiro Koshido ,  Makoto Tose ,  Masatoshi Nakagawa

发明人： Masayuki Yoneda ,  Yoshihiro Koshido ,  Makoto Tose ,  Masatoshi Nakagawa

IPC分类号： H04R1700

CPC分类号： C23C14/5806 ,  C23C14/18 ,  C23C14/58 ,  C23C16/06 ,  C23C16/56 ,  H01L41/29 ,  H03H3/08 ,  Y10T29/42 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49156

摘要： A method of forming an electrode film using a vacuum deposition apparatus, includes the steps of depositing a refractory metal on a substrate after reaching a back pressure in a deposition chamber at a pressure that is within a range of about 1×10−4 Pa to about 5′10−3 Pa, and annealing the substrate on which the metal is deposited to decrease the electrical resistivity of the electrode film.

摘要翻译： 使用真空沉积设备形成电极膜的方法包括以下步骤：在沉积室中以约1×10 -4 Pa至约5的范围内的压力达到背压后在基板上沉积难熔金属 并且对其上沉积有金属的衬底退火以降低电极膜的电阻率。

公开(公告)号：US08514049B2

公开(公告)日：2013-08-20

申请号：US13086251

申请日：2011-04-13

申请人： Shinichiro Sugiyama ,  Kaori Takezawa ,  Hiromi Miyoshi ,  Masayuki Yoneda

发明人： Shinichiro Sugiyama ,  Kaori Takezawa ,  Hiromi Miyoshi ,  Masayuki Yoneda

IPC分类号： H01F5/00 ,  H01F27/28

CPC分类号： H01F17/0013 ,  H01F27/292 ,  H01F27/34 ,  H01F2017/004

摘要： This disclosure provides an electronic component that can suppress a decrease in the resonant frequency. The electronic component includes a multilayer body having plural insulating layers stacked in a staking direction. Outer electrodes are provided on facing lateral sides of the multilayer body and extend in the stacking direction. Coil conductors are stacked together with the insulating layers to form a coil. The thickness in the stacking direction of at least one of the coil conductors that is directly connected to one of the outer electrodes is smaller than that of the coil conductors that are not directly connected to any of the outer electrodes.

摘要翻译： 本公开提供了可以抑制谐振频率降低的电子部件。 该电子部件包括具有堆叠方向的多个绝缘层的多层体。 外电极设置在多层体的相对的侧面上并且沿堆叠方向延伸。 线圈导体与绝缘层堆叠在一起以形成线圈。 直接连接到一个外部电极的至少一个线圈导体的堆叠方向的厚度小于不直接连接到任何外部电极的线圈导体的厚度。

公开(公告)号：US20100083766A1

公开(公告)日：2010-04-08

申请号：US12574261

申请日：2009-10-06

申请人： Masayuki Yoneda ,  Tomohisa Tokuda

发明人： Masayuki Yoneda ,  Tomohisa Tokuda

IPC分类号： G01L9/06

CPC分类号： G01L9/0054 ,  G01L9/0042 ,  G01L13/025 ,  G01L15/00

摘要： A pressure sensor according to the present invention comprises: a differential pressure diaphragm, which is provided to a center part of a sensor chip; a differential pressure gauge, which is provided to a perimeter edge part of the differential pressure diaphragm and is formed in radial directions; a differential pressure gauge, which is disposed at a position at which it opposes the differential pressure gauge and, together with the first differential pressure gauge, sandwiches the differential pressure diaphragm and is formed in perimeter directions, which are perpendicular to the radial directions; a differential pressure gauge, which is provided in the vicinity of the differential pressure gauge and is provided in the perimeter directions; a differential pressure gauge, which is disposed at a position at which it opposes the differential pressure gauge and, together with the differential pressure gauge, sandwiches the differential pressure diaphragm and is formed in the radial directions; a static pressure diaphragm, which is disposed at a position that lies in the perimeter directions between the differential pressure gauge and the differential pressure gauge; and a static pressure diaphragm, which is disposed at a position at which it opposes the static pressure diaphragm and, together with the static pressure diaphragm, sandwiches the differential pressure diaphragm.

摘要翻译： 根据本发明的压力传感器包括：差压膜，其设置在传感器芯片的中心部分; 差压表，其设置在压差隔膜的周缘部，并且沿径向方向形成; 差压计设置在与差压表相对的位置处，并与第一差压表一起夹紧差压隔膜，并且在垂直于径向方向的周向形成; 差压表，其设置在差压计附近并沿周向设置; 差压表设置在与差压表相对的位置处，并与差压表一起夹紧差压隔膜并沿径向形成; 静压膜，其设置在位于差压表和压差计之间的周边方向上的位置; 以及设置在与静压隔膜相对的位置并与静压隔膜一起夹紧差压隔膜的静压隔膜。

公开(公告)号：US08042400B2

公开(公告)日：2011-10-25

申请号：US12574261

申请日：2009-10-06

申请人： Masayuki Yoneda ,  Tomohisa Tokuda

发明人： Masayuki Yoneda ,  Tomohisa Tokuda

IPC分类号： G01L13/02

CPC分类号： G01L9/0054 ,  G01L9/0042 ,  G01L13/025 ,  G01L15/00

摘要： A pressure sensor according to the present invention comprises: a differential pressure diaphragm, which is provided to a center part of a sensor chip; a differential pressure gauge, which is provided to a perimeter edge part of the differential pressure diaphragm and is formed in radial directions; a differential pressure gauge, which is disposed at a position at which it opposes the differential pressure gauge and, together with the first differential pressure gauge, sandwiches the differential pressure diaphragm and is formed in perimeter directions, which are perpendicular to the radial directions; a differential pressure gauge, which is provided in the vicinity of the differential pressure gauge and is provided in the perimeter directions; a differential pressure gauge, which is disposed at a position at which it opposes the differential pressure gauge and, together with the differential pressure gauge, sandwiches the differential pressure diaphragm and is formed in the radial directions; a static pressure diaphragm, which is disposed at a position that lies in the perimeter directions between the differential pressure gauge and the differential pressure gauge; and a static pressure diaphragm, which is disposed at a position at which it opposes the static pressure diaphragm and, together with the static pressure diaphragm, sandwiches the differential pressure diaphragm.

摘要翻译： 根据本发明的压力传感器包括：差压膜，其设置在传感器芯片的中心部分; 差压表，其设置在压差隔膜的周缘部，并且沿径向方向形成; 差压表设置在与差压表相对的位置处，并与第一差压表一起夹紧差压隔膜，并且在与径向方向垂直的周向形成; 差压表，其设置在差压计附近并沿周向设置; 差压表设置在与差压表相对的位置处，并与差压表一起夹紧差压隔膜并沿径向形成; 静压膜，其设置在位于差压表和压差计之间的周边方向上的位置; 以及设置在与静压隔膜相对的位置并与静压隔膜一起夹紧差压隔膜的静压隔膜。

公开(公告)号：US07808365B2

公开(公告)日：2010-10-05

申请号：US12035000

申请日：2008-02-21

申请人： Hirofumi Tojo ,  Masayuki Yoneda ,  Tomohisa Tokuda

发明人： Hirofumi Tojo ,  Masayuki Yoneda ,  Tomohisa Tokuda

IPC分类号： H01C10/10

CPC分类号： G01L9/0054

摘要： A diaphragm is formed at a predetermined location of a sensor chip made of semiconductor material, and a sensor gauge for differential pressure or pressure sensing-use is provided on the sensor chip that includes at least the diaphragm. The sensor gauge has a plurality of sensor gauges synergistically forming a bridge circuit, and are connected to one another with semiconductor resistors, the semiconductor resistors and the sensor gauges are covered with an insulating film, and the number of contact holes, passing through a portion of the insulating film, for electrode line-out use for forming contacts electrically connected to the semiconductor resistors does not exceed the number of sensor gauges.

摘要翻译： 在由半导体材料制成的传感器芯片的预定位置处形成隔膜，并且在至少包括隔膜的传感器芯片上设置用于差压或压力感测的传感器。 传感器表具有协同地形成桥接电路的多个传感器量规，并且用半导体电阻器彼此连接，半导体电阻器和传感器计量器被绝缘膜覆盖，并且接触孔的数量通过一部分 的绝缘膜，用于形成电连接到半导体电阻器的触点的电极线路输出用途不超过传感器量规的数量。

公开(公告)号：US20060272422A1

公开(公告)日：2006-12-07

申请号：US10567999

申请日：2004-08-20

申请人： Masayuki Yoneda ,  Jun Mizoguchi ,  Yasuhiro Kajio ,  Masaya Ishikawa ,  Youichi Azuma ,  Naohisa Tsuchiya

发明人： Masayuki Yoneda ,  Jun Mizoguchi ,  Yasuhiro Kajio ,  Masaya Ishikawa ,  Youichi Azuma ,  Naohisa Tsuchiya

IPC分类号： G01L9/12

CPC分类号： G01L19/0618 ,  G01L9/0051 ,  G01L13/026 ,  G01L19/0092 ,  G01L19/0645

摘要： The pressure sensor device has a laminated diaphragm (12) in which a strain resistance gauge is formed in a surface and a stopper member (13) including a concave portion forming a curved surface parallel to a surface formed by displacement of the diaphragm, the concave portion being disposed to face the diaphragm. Specifically, the concave portion of the stopper member is formed into a curved surface in which depth y at a distance x from the center of the diaphragm is expressed by a quartic function [y=pr4(1−x2/r2)2/64D] in relation to the operating pressure for protection against maximum pressure p when the diaphragm has a radius of r, a thickness of t, and a flexural rigidity of D.

摘要翻译： 压力传感器装置具有层压隔膜（12），其中在表面形成有应变阻力计，以及止动构件（13），该阻挡构件（13）包括形成与由隔膜的位移形成的表面平行的弯曲表面的凹部， 被设置为面对隔膜的部分。 具体而言，止动构件的凹部形成为弯曲面，其中距离振动膜中心的距离x处的深度y由四次函数表示[y = 相对于用于防止最大压力p的操作压力，当隔膜具有半径为的最大压力p时，相对于最大压力p的操作压力相对于第二/第二/第二/ r，厚度t，弯曲刚度D.

公开(公告)号：US06619133B1

公开(公告)日：2003-09-16

申请号：US09622271

申请日：2000-10-01

申请人： Yasuhiro Goshoo ,  Hirofumi Toujou ,  Masayuki Yoneda ,  Takeshi Fukiura

发明人： Yasuhiro Goshoo ,  Hirofumi Toujou ,  Masayuki Yoneda ,  Takeshi Fukiura

IPC分类号： G01L904

CPC分类号： G01L9/0042 ,  G01L9/0055

摘要： That portion of an n-type single-crystal Si layer 1 which corresponds to a pressure-sensitive region is etched to an SiO2 layer 2 by using the SiO2 layer 2 as an etching stopper layer. The SiO2 layer 2 exposed by this etching is removed. The pressure-sensitive region of the n-type single-crystal Si layer 3 is etched by a predetermined amount to form a diaphragm 4. Thus, the SiO2 layer 2 is removed from the diaphragm 4 and a diaphragm edge portion 6.

摘要翻译： 通过使用SiO 2层2作为蚀刻停止层，将对应于压敏区域的n型单晶Si层1的该部分蚀刻到SiO 2层2。 去除通过该蚀刻暴露的SiO 2层2。 n型单晶Si层3的压敏区域被蚀刻预定量以形成隔膜4.因此，SiO 2层2从膜片4和膜片边缘部分6中去除。

公开(公告)号：US08161820B2

公开(公告)日：2012-04-24

申请号：US12574075

申请日：2009-10-06

申请人： Masayuki Yoneda ,  Tomohisa Tokuda

发明人： Masayuki Yoneda ,  Tomohisa Tokuda

IPC分类号： G01L9/06

CPC分类号： G01L9/0054 ,  G01L9/065

摘要： A pressure sensor according to the present invention comprises: a differential pressure diaphragm; a static pressure diaphragm, which is provided to an outer perimeter part of the differential pressure diaphragm; a first static pressure gauge pair that is formed in the end part of the static pressure diaphragm and comprises two static pressure gauges, which are disposed such that they sandwich the differential pressure diaphragm; and a second static pressure gauge pair that is formed in the center part of the static pressure diaphragm and comprises two static pressure gauges which are disposed such that they sandwich the differential pressure diaphragm.

摘要翻译： 根据本发明的压力传感器包括：差压隔膜; 静压膜，其设置在差压隔膜的外周部; 第一静压计对，其形成在静压隔膜的端部，并包括两个静压计，它们被设置成它们夹在压差隔膜上; 以及形成在静压隔膜的中心部分的第二静压计对，并且包括两个静压计，它们被设置成使它们夹在差压隔膜上。

公开(公告)号：US20110001199A1

公开(公告)日：2011-01-06

申请号：US12830787

申请日：2010-07-06

申请人： Hirofumi Tojo ,  Masayuki Yoneda

发明人： Hirofumi Tojo ,  Masayuki Yoneda

IPC分类号： H01L29/84 ,  H01L21/28

CPC分类号： G01L9/0054

摘要： A pressure sensor having a second semiconductor layer wherein is formed diffused resistance interconnections, an insulating layer that is formed on top of the second semiconductor layer, and external conducting portions that are formed on top of the insulating layer, wherein contacts for connecting electrically between the external conducting portions and the diffused resistance interconnections are formed in the insulating layer, and wherein the external conducting portions are formed in ranges corresponding to the ranges wherein the diffused resistance interconnections are formed in the second semiconductor layer.

摘要翻译： 一种具有第二半导体层的压力传感器，其中形成有扩散电阻互连，形成在第二半导体层顶部的绝缘层和形成在绝缘层顶部的外部导电部分， 外部导电部分和扩散电阻互连形成在绝缘层中，并且其中外部导电部分形成在与在第二半导体层中形成扩散电阻互连的范围相对应的范围内。

公开(公告)号：US07497126B2

公开(公告)日：2009-03-03

申请号：US12035539

申请日：2008-02-22

申请人： Hirofumi Tojo ,  Masayuki Yoneda ,  Tomohisa Tokuda

发明人： Hirofumi Tojo ,  Masayuki Yoneda ,  Tomohisa Tokuda

IPC分类号： G01L9/06

CPC分类号： G01L9/0042

摘要： In a pressure sensor comprising a diaphragm formed on a portion of a chip made of semiconductor material and that senses pressure on the diaphragm by electrically converting the displacement corresponding to that pressure, the provision of the diaphragm with an aspect ratio of at least a size such that the derivative of the characteristic curve of the allowable pressure resistance of the pressure sensor, defined by setting the aspect ratio obtained by dividing the length of one side of the diaphragm by the thickness of the diaphragm as the horizontal axis and by setting the allowable pressure resistance of the pressure sensor as the vertical axis, becomes nearly zero, enables a pressure sensor having high sensitivity and high pressure resistance.

摘要翻译： 在压力传感器中，包括形成在由半导体材料制成的芯片的一部分上的隔膜，并通过电转换对应于该压力的位移来感测隔膜上的压力，提供具有至少尺寸等于 通过将通过将隔膜的一侧的长度除以膜片的厚度作为水平轴而获得的纵横比设定为压力传感器的允许压力电阻的特性曲线的导数，并且通过设定容许压力 作为垂直轴的压力传感器的电阻变为接近零，能够实现具有高灵敏度和高耐压性的压力传感器。