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    Methods of forming a pattern on a substrate
    2.
    发明授权
    Methods of forming a pattern on a substrate 有权
    在基板上形成图案的方法

    公开(公告)号：US09153458B2

    公开(公告)日：2015-10-06

    申请号：US14064261

    申请日：2013-10-28

    Applicant: Micron Technology, Inc.

    Inventor： Scott L. Light ,  Anton deVilliers

    IPC: H01L21/311 ,  H01L21/033

    CPC classification number: H01L21/31144 ,  H01L21/0337 ,  H01L21/0338

    Abstract: A method of forming a pattern on a substrate includes forming a repeating pattern of four first lines elevationally over an underlying substrate. A repeating pattern of four second lines is formed elevationally over and crossing the repeating pattern of four first lines. First alternating of the four second lines are removed from being received over the first lines. After the first alternating of the four second lines have been removed, elevationally exposed portions of alternating of the four first lines are removed to the underlying substrate using a remaining second alternating of the four second lines as a mask. Additional embodiments are disclosed and contemplated.

    Abstract translation: 在衬底上形成图案的方法包括在下面的衬底上形成四个第一线的重复图案。 四条第二条线的重复图案在四条第一条线的重复图案的正上方横跨形成。 四条第二条线的第一次交替从第一条线路上被接收除去。 在四条第二条线的第一次交替已经被去除之后，四条第一条线的交替的高度暴露的部分使用四条第二条线的剩余的第二交替作为掩模被去除到下面的基底。 另外的实施例被公开和预期。

    LITHOGRAPHY METHODS, METHODS FOR FORMING PATTERNING TOOLS AND PATTERNING TOOLS
    4.
    发明申请
    LITHOGRAPHY METHODS, METHODS FOR FORMING PATTERNING TOOLS AND PATTERNING TOOLS 有权
    图形方法，形成图案工具和绘图工具的方法

    公开(公告)号：US20140106280A1

    公开(公告)日：2014-04-17

    申请号：US14107767

    申请日：2013-12-16

    Applicant: Micron Technology, Inc.

    Inventor： Jianming Zhou ,  Scott L. Light ,  David Kewley ,  Prasanna Srinivasan ,  Anton deVilliers

    IPC: G03F7/20

    CPC classification number: G03F7/20 ,  G03F1/26 ,  G03F1/32 ,  G03F7/70433 ,  G03F7/70883

    Abstract: Methods of lithography, methods for forming patterning tools, and patterning tools are described. One such patterning tool include an active region that forms a first diffraction image on a lens when in use, and an inactive region that forms a second diffraction image on a lens when in use. The inactive region includes a pattern of phase shifting features formed in a substantially transparent material of the patterning tool. Patterning tools and methods, as described, can be used to compensate for lens distortion from effects such as localized heating.

    Abstract translation: 描述了光刻方法，用于形成图案形成工具的方法和图案形成工具。 一种这样的图案形成工具包括在使用时在透镜上形成第一衍射图像的有源区域和在使用时在透镜上形成第二衍射图像的非活性区域。 非活性区域包括形成在图案形成工具的基本上透明的材料中的相移特征的图案。 如所描述的图案化工具和方法可用于补偿透镜失真，例如局部加热等影响。

    Methods Of Forming a Pattern on a Substrate
    5.
    发明申请
    Methods Of Forming a Pattern on a Substrate 有权
    在基材上形成图案的方法

    公开(公告)号：US20140051251A1

    公开(公告)日：2014-02-20

    申请号：US14064261

    申请日：2013-10-28

    Applicant: Micron Technology, Inc.

    Inventor： Scott L. Light ,  Anton deVilliers

    IPC: H01L21/311

    CPC classification number: H01L21/31144 ,  H01L21/0337 ,  H01L21/0338

    Abstract: A method of forming a pattern on a substrate includes forming a repeating pattern of four first lines elevationally over an underlying substrate. A repeating pattern of four second lines is formed elevationally over and crossing the repeating pattern of four first lines. First alternating of the four second lines are removed from being received over the first lines. After the first alternating of the four second lines have been removed, elevationally exposed portions of alternating of the four first lines are removed to the underlying substrate using a remaining second alternating of the four second lines as a mask. Additional embodiments are disclosed and contemplated.

    Abstract translation: 在衬底上形成图案的方法包括在下面的衬底上形成四个第一线的重复图案。 四条第二条线的重复图案在四条第一条线的重复图案的正上方横跨形成。 四条第二条线的第一次交替从第一条线路上被接收除去。 在四条第二条线的第一次交替已经被去除之后，四条第一条线的交替的高度暴露的部分使用四条第二条线的剩余的第二交替作为掩模被去除到下面的基底。 另外的实施例被公开和预期。

    Methods of Fabricating Substrates
    7.
    发明申请
    Methods of Fabricating Substrates 有权
    制造基板的方法

    公开(公告)号：US20140335694A1

    公开(公告)日：2014-11-13

    申请号：US14445478

    申请日：2014-07-29

    Applicant: Micron Technology, Inc.

    Inventor： Scott Sills ,  Gurtej S. Sandhu ,  Anton deVilliers

    IPC: H01L21/308

    CPC classification number: H01L21/3088 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/31138

    Abstract: A method of fabricating a substrate includes forming spaced first features over a substrate. An alterable material is deposited over the spaced first features and the alterable material is altered with material from the spaced first features to form altered material on sidewalls of the spaced first features. A first material is deposited over the altered material, and is of some different composition from that of the altered material. The first material is etched to expose the altered material and spaced second features comprising the first material are formed on sidewalls of the altered material. Then, the altered material is etched from between the spaced second features and the spaced first features. The substrate is processed through a mask pattern comprising the spaced first features and the spaced second features. Other embodiments are disclosed.

    Abstract translation: 一种制造衬底的方法包括：在衬底上方形成间隔开的第一特征。 可更换的材料沉积在间隔开的第一特征上，并且可变材料用来自间隔开的第一特征的材料改变，以在间隔开的第一特征的侧壁上形成改变的材料。 第一种材料沉积在改变的材料上，并且与改变的材料的组成不同。 蚀刻第一材料以暴露改变的材料并且包含第一材料的间隔开的第二特征形成在改变的材料的侧壁上。 然后，从间隔开的第二特征和间隔开的第一特征之间蚀刻改变的材料。 通过包括间隔开的第一特征和间隔开的第二特征的掩模图案处理基板。 公开了其他实施例。

    Lithography methods, methods for forming patterning tools and patterning tools
    10.
    发明授权
    Lithography methods, methods for forming patterning tools and patterning tools 有权
    平版印刷方法，图案形成工具和图形工具的形成方法

    公开(公告)号：US09176385B2

    公开(公告)日：2015-11-03

    申请号：US14107767

    申请日：2013-12-16

    Applicant: Micron Technology, Inc.

    Inventor： Jianming Zhou ,  Scott L. Light ,  David Kewley ,  Prasanna Srinivasan ,  Anton deVilliers

    IPC: G03F1/44 ,  G03F7/20 ,  G03F1/26 ,  G03F1/32

    CPC classification number: G03F7/20 ,  G03F1/26 ,  G03F1/32 ,  G03F7/70433 ,  G03F7/70883

    Abstract: Methods of lithography, methods for forming patterning tools, and patterning tools are described. One such patterning tool include an active region that forms a first diffraction image on a lens when in use, and an inactive region that forms a second diffraction image on a lens when in use. The inactive region includes a pattern of phase shifting features formed in a substantially transparent material of the patterning tool. Patterning tools and methods, as described, can be used to compensate for lens distortion from effects such as localized heating.

    Abstract translation: 描述了光刻方法，用于形成图案形成工具的方法和图案形成工具。 一种这样的图案形成工具包括在使用时在透镜上形成第一衍射图像的有源区域和在使用时在透镜上形成第二衍射图像的非活性区域。 非活性区域包括形成在图案形成工具的基本上透明的材料中的相移特征的图案。 如所描述的图案化工具和方法可用于补偿透镜失真，例如局部加热等影响。

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