公开(公告)号：US20230345722A1

公开(公告)日：2023-10-26

申请号：US17726968

申请日：2022-04-22

Applicant: Micron Technology, Inc.

Inventor： Byeung Chul Kim ,  Joshua Wolanyk ,  Richard J. Hill ,  Damir Fazil

IPC: H01L27/11582 ,  H01L23/535 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11573

CPC classification number: H01L27/11582 ,  H01L23/535 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11573

Abstract: Some embodiments include apparatuses and methods of forming the apparatuses. One of the methods includes forming levels of materials one over another; forming a first opening and a second opening in the levels of materials; forming at least one dielectric material in the first and second openings; forming tiers of materials over the levels of materials and over the dielectric material in the first and second openings; forming a first pillar of a memory cell string, the first pillar extending through the tiers of materials and extending partially into a location of the first opening; and forming a second pillar of a contact structure, the second pillar extending through the tiers of materials and through a location of the second opening.

公开(公告)号：US12040253B2

公开(公告)日：2024-07-16

申请号：US17508143

申请日：2021-10-22

Applicant: Micron Technology, Inc.

Inventor： Alyssa N. Scarbrough ,  John D. Hopkins ,  Chet E. Carter ,  Justin D. Shepherdson ,  Collin Howder ,  Joshua Wolanyk

IPC: H01L23/48 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

CPC classification number: H01L23/481 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers above a conductor tier. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. The channel-material strings directly electrically couple with conductor material of the conductor tier by conducting material that is in a lowest of the conductive tiers and that is directly against multiple of the channel-material strings. A through-array-via (TAV) region comprises TAVs that individually extend through the lowest conductive tier and into the conductor tier. Individual of the TAVs in the lowest conductive tier comprise a conductive core having an annulus circumferentially there-about. The annulus has dopant therein at a total dopant concentration of 0.01 to 30 atomic percent. Insulative material in the lowest conductive tier is circumferentially about the annulus and between immediately-adjacent of the TAVs. Other embodiments, including method, are disclosed.

公开(公告)号：US20250131776A1

公开(公告)日：2025-04-24

申请号：US18785827

申请日：2024-07-26

Applicant: Micron Technology, Inc.

Inventor： Joshua Wolanyk

IPC: G07C5/00 ,  G07C5/08

Abstract: Systems and methods for retaining data related to a detected collision are disclosed including receiving vehicle information from a sensor, receiving information about one or more other vehicles using a communication circuit, receiving an indication of a detected collision, and responsive to the received indication of the detected collision, storing information corresponding to the detected collision from a collision reenactment period in non-volatile memory of the first vehicle and broadcasting the information corresponding to the detected collision using the communication circuit.

公开(公告)号：US20230062403A1

公开(公告)日：2023-03-02

申请号：US17508143

申请日：2021-10-22

Applicant: Micron Technology, Inc.

Inventor： Alyssa N. Scarbrough ,  John D. Hopkins ,  Chet E. Carter ,  Justin D. Shepherdson ,  Collin Howder ,  Joshua Wolanyk

IPC: H01L23/48 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers above a conductor tier. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. The channel-material strings directly electrically couple with conductor material of the conductor tier by conducting material that is in a lowest of the conductive tiers and that is directly against multiple of the channel-material strings. A through-array-via (TAV) region comprises TAVs that individually extend through the lowest conductive tier and into the conductor tier. Individual of the TAVs in the lowest conductive tier comprise a conductive core having an annulus circumferentially there-about. The annulus has dopant therein at a total dopant concentration of 0.01 to 30 atomic percent. Insulative material in the lowest conductive tier is circumferentially about the annulus and between immediately-adjacent of the TAVs. Other embodiments, including method, are disclosed.