公开(公告)号：US20210167079A1

公开(公告)日：2021-06-03

申请号：US17173405

申请日：2021-02-11

Applicant: Micron Technology, Inc.

Inventor： Rohit Kothari ,  Jason C. McFarland ,  Jason Reece ,  David A. Kewley ,  Adam L. Olson

IPC: H01L27/11556 ,  H01L21/3213 ,  H01L21/311

Abstract: Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.

公开(公告)号：US20180366481A1

公开(公告)日：2018-12-20

申请号：US15624422

申请日：2017-06-15

Applicant: Micron Technology, Inc.

Inventor： Rohit Kothari ,  Jason C. McFarland ,  Jason Reece ,  David A. Kewley ,  Adam L. Olson

IPC: H01L27/11556 ,  H01L27/11582 ,  H01L21/3213 ,  H01L21/311

Abstract: Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.

公开(公告)号：US11658132B2

公开(公告)日：2023-05-23

申请号：US17559321

申请日：2021-12-22

Applicant: Micron Technology, Inc.

Inventor： Rohit Kothari ,  Lifang Xu ,  Jian Li

IPC: H01L23/522 ,  H01L23/528 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11582 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11529 ,  H01L23/00

CPC classification number: H01L23/562 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/1157 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11529 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11582

Abstract: Some embodiments include an integrated assembly having a semiconductor die with memory array regions and one or more regions peripheral to the memory array regions. A stack of alternating insulative and conductive levels extends across the memory array regions and passes into at least one of the peripheral regions. The stack generates bending stresses on the die. At least one stress-moderating region extends through the stack and is configured to alleviate the bending stresses.

公开(公告)号：US20200211981A1

公开(公告)日：2020-07-02

申请号：US16235665

申请日：2018-12-28

Applicant: Micron Technology, Inc.

Inventor： Rohit Kothari ,  Adam L. Olson ,  John D. Hopkins ,  Jeslin J. Wu

IPC: H01L23/00 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/762

Abstract: A method of forming a semiconductor device comprising forming a patterned resist over a stack comprising at least one material and removing a portion of the stack exposed through the patterned resist to form a stack opening. A portion of the patterned resist is laterally removed to form a trimmed resist and an additional portion of the stack exposed through the trimmed resist is removed to form steps in sidewalls of the stack. A dielectric material is formed between the sidewalls of the stack to substantially completely fill the stack opening, and the dielectric material is planarized. Additional methods are disclosed, as well as semiconductor devices.

公开(公告)号：US11581264B2

公开(公告)日：2023-02-14

申请号：US16546759

申请日：2019-08-21

Applicant: Micron Technology, Inc.

Inventor： Rohit Kothari ,  Harsh Narendrakumar Jain ,  John D. Hopkins ,  Xiaosong Zhang

IPC: H01L23/544

Abstract: An electronic device comprising at least one high aspect ratio feature in a base stack of materials, overlay marks in or on only an upper portion of the base stack of materials, and an additional stack of materials adjacent the base stack of materials, the additional stack of materials comprising the at least one high aspect ratio feature. Additional electronic devices and memory devices are disclosed, as are methods of forming high aspect ratio features in an electronic device.

公开(公告)号：US20220115335A1

公开(公告)日：2022-04-14

申请号：US17559321

申请日：2021-12-22

Applicant: Micron Technology, Inc.

Inventor： Rohit Kothari ,  Lifang Xu ,  Jian Li

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/528 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11582 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11529

Abstract: Some embodiments include an integrated assembly having a semiconductor die with memory array regions and one or more regions peripheral to the memory array regions. A stack of alternating insulative and conductive levels extends across the memory array regions and passes into at least one of the peripheral regions. The stack generates bending stresses on the die. At least one stress-moderating region extends through the stack and is configured to alleviate the bending stresses.

公开(公告)号：US20210057349A1

公开(公告)日：2021-02-25

申请号：US16546759

申请日：2019-08-21

Applicant: Micron Technology, Inc.

Inventor： Rohit Kothari ,  Harsh Narendrakumar Jain ,  John D. Hopkins ,  Xiaosong Zhang

IPC: H01L23/544

Abstract: An electronic device comprising at least one high aspect ratio feature in a base stack of materials, overlay marks in or on only an upper portion of the base stack of materials, and an additional stack of materials adjacent the base stack of materials, the additional stack of materials comprising the at least one high aspect ratio feature. Additional electronic devices and memory devices are disclosed, as are methods of forming high aspect ratio features in an electronic device.

公开(公告)号：US11916024B2

公开(公告)日：2024-02-27

申请号：US17447618

申请日：2021-09-14

Applicant: Micron Technology, Inc.

Inventor： Rohit Kothari ,  Adam L Olson ,  John D. Hopkins ,  Jeslin J. Wu

IPC: H01L23/00 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/762

CPC classification number: H01L23/562 ,  H01L21/31053 ,  H01L21/31144 ,  H01L21/76224

Abstract: A method of forming a semiconductor device comprising forming a patterned resist over a stack comprising at least one material and removing a portion of the stack exposed through the patterned resist to form a stack opening. A portion of the patterned resist is laterally removed to form a trimmed resist and an additional portion of the stack exposed through the trimmed resist is removed to form steps in sidewalls of the stack. A dielectric material is formed between the sidewalls of the stack to substantially completely fill the stack opening, and the dielectric material is planarized. Additional methods are disclosed, as well as semiconductor devices.

公开(公告)号：US20210407930A1

公开(公告)日：2021-12-30

申请号：US17447618

申请日：2021-09-14

Applicant: Micron Technology, Inc.

Inventor： Rohit Kothari ,  Adam L. Olson ,  John D. Hopkins ,  Jeslin J. Wu

IPC: H01L23/00 ,  H01L21/762 ,  H01L21/3105 ,  H01L21/311

Abstract: A method of forming a semiconductor device comprising forming a patterned resist over a stack comprising at least one material and removing a portion of the stack exposed through the patterned resist to form a stack opening. A portion of the patterned resist is laterally removed to form a trimmed resist and an additional portion of the stack exposed through the trimmed resist is removed to form steps in sidewalls of the stack. A dielectric material is formed between the sidewalls of the stack to substantially completely fill the stack opening, and the dielectric material is planarized. Additional methods are disclosed, as well as semiconductor devices.

公开(公告)号：US10600796B2

公开(公告)日：2020-03-24

申请号：US15624422

申请日：2017-06-15

Applicant: Micron Technology, Inc.

Inventor： Rohit Kothari ,  Jason C. McFarland ,  Jason Reece ,  David A. Kewley ,  Adam L. Olson

IPC: H01L21/3213 ,  H01L27/11556 ,  H01L21/311 ,  H01L27/11582 ,  G03F7/00

Abstract: Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.