公开(公告)号：US20060081182A1

公开(公告)日：2006-04-20

申请号：US11246290

申请日：2005-10-11

申请人： Mitsuhiro Okada ,  Atsushi Endo ,  Toshiharu Nishimura ,  Kazuhide Hasebe

发明人： Mitsuhiro Okada ,  Atsushi Endo ,  Toshiharu Nishimura ,  Kazuhide Hasebe

IPC分类号： C23C16/00 ,  B08B3/12 ,  B44C1/22 ,  B05C11/00

CPC分类号： C23C16/4405

摘要： A thin film deposition system cleaning method is capable of efficiently removing reaction products deposited on surfaces of component members of a thin film deposition system. A thermal processing system 1 capable of carrying out the thin film deposition system cleaning method includes a controller 100. The controller 100 controls a heating means so as to heat the interior of a reaction tube 2 at a temperature in the range of 400° C. to 700° C. The controller 100 controls a cleaning gas supply means for supplying a cleaning gas containing fluorine and hydrogen fluoride through a process gas supply pipe 17 into the reaction tube 2 to remove deposits deposited on surfaces exposed to an atmosphere in the reaction tube 2.

摘要翻译： 薄膜沉积系统清洁方法能够有效地去除沉积在薄膜沉积系统的部件的表面上的反应产物。 能够进行薄膜沉积系统清洗方法的热处理系统1包括控制器100。 控制器100控制加热装置，以便在400℃至700℃范围内的温度下加热反应管2的内部。控制器100控制用于供应含有氟的清洁气体的清洁气体供应装置 和氟化氢通过工艺气体供给管17进入反应管2，以去除沉积在暴露于反应管2中的气氛的表面上的沉积物。

公开(公告)号：US20050284575A1

公开(公告)日：2005-12-29

申请号：US11196398

申请日：2005-08-04

申请人： Kazuhide Hasebe ,  Atsushi Endo ,  Mitsuhiro Okada ,  Jun Ogawa ,  Akihito Yamamoto ,  Takashi Nakao ,  Masaki Kamimura ,  Yukihiro Ushiku

发明人： Kazuhide Hasebe ,  Atsushi Endo ,  Mitsuhiro Okada ,  Jun Ogawa ,  Akihito Yamamoto ,  Takashi Nakao ,  Masaki Kamimura ,  Yukihiro Ushiku

IPC分类号： C23C16/44 ,  H01L21/00 ,  C23F1/00 ,  B44C1/22

CPC分类号： H01L21/67248 ,  C23C16/4405 ,  H01L21/67109

摘要： A processing system of the present invention includes: a reaction container in which a substrate to be processed is placed, a process-gas supplying mechanism that supplies a process gas into the reaction container at a process to the substrate, a cleaning-gas supplying mechanism that supplies a corrosive cleaning gas into the reaction container at a cleaning process, a gas-discharging-way member connected to the reaction chamber, a heating unit that heats a specific portion of the reaction container and the gas-discharging-way member, a temperature detecting unit that detects a temperature of the specific portion, a temperature controlling unit that controls the heating unit based on a detection value detected by the temperature detecting unit in such a manner that the specific portion becomes to a predetermined target temperature, and a temperature changing unit that changes the target temperature between at the process to the substrate and at the cleaning process. By means of the temperature changing unit, the target temperature is set to a temperature at which adhesion of reaction by-products to the specific portion may be inhibited, at the process to the substrate, while the target temperature is set to a temperature at which corrosion of the specific portion may be inhibited, at the cleaning process.

摘要翻译： 本发明的处理系统包括：反应容器，其中放置有待处理的基板，处理气体供给机构，其将处理气体在处理过程中提供给反应容器;清洗气体供给机构 在清洁过程中向反应容器提供腐蚀性清洁气体，连接到反应室的气体排出构件，加热反应容器的特定部分的加热单元和气体排出通路构件， 温度检测单元，其检测特定部分的温度;温度控制单元，其基于由温度检测单元检测的检测值以特定部分变为预定目标温度的方式控制加热单元;温度控制单元， 改变单元，其在过程到基板和清洁过程之间改变目标温度。 通过温度变化单元，将目标温度设定为在基板处理时可以抑制反应副产物对特定部分的粘附的温度，同时将目标温度设定为温度 在清洗过程中可能会抑制特定部分的腐蚀。

公开(公告)号：US5677235A

公开(公告)日：1997-10-14

申请号：US600146

申请日：1996-02-12

申请人： Kazuhide Hasebe ,  Toshiharu Nishimura

发明人： Kazuhide Hasebe ,  Toshiharu Nishimura

IPC分类号： H01L21/205 ,  C23C16/24 ,  C30B29/06 ,  H01L21/20

CPC分类号： C23C16/24

摘要： A number of semiconductor wafers are retained in a wafer boat such that the wafers are disposed at intervals in the vertical direction. The wafer boat is loaded into a process tube of a vertical type thermal processing apparatus. The inside of the process tube is heated to 300.degree. to 530.degree. C. in a depressurized atmosphere, and a process gas including a disilane gas is fed into the process tube such that the disilane gas flows at a flow rate of 300 SCCM or more, thereby to form silicon films.

摘要翻译： 许多半导体晶片被保留在晶片舟皿中，使得晶片在垂直方向上间隔设置。 将晶片舟装载到垂直型热处理装置的处理管中。 在减压气氛中将处理管的内部加热至300℃至530℃，并且将包含乙硅烷气体的工艺气体供给到处理管中，使得乙硅烷气体以300SCCM以上的流量流动 ，从而形成硅膜。

公开(公告)号：US20080264339A1

公开(公告)日：2008-10-30

申请号：US12213574

申请日：2008-06-20

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada

IPC分类号： B05C11/00

CPC分类号： C23C16/52 ,  C23C16/4408

摘要： After silicon nitride films have been formed on wafers by a film forming process in a reaction vessel, the reaction vessel is processed by a purging process specified by a purging recipe and compatible with the film forming process to suppress production of gases and particles by removing surface parts of films deposited on the inside surface of the reaction vessel and causative of production of gases and particles.A wafer boat 25 holding a plurality of wafers W is loaded into a reaction vessel 2, and the wafers W are processed by a film forming process specified by a film forming recipe 1 specifying, for example, Si2Cl2 gas and NH3 gas as film forming gases. Subsequently, a purging recipe 1 specifying a purging process compatible to the film forming process is selected automatically, and the reaction vessel 2 is processed by the purging process specified by the purging recipe 1. A purging recipe is selected automatically from a plurality of purging recipes specifying purging processes respectively compatible with film forming processes. Unnecessary extension of purging time is suppressed and the reaction vessel 2 can be processed by an appropriate purging process compatible with the film forming process.

摘要翻译： 氮化硅膜通过成膜工艺在反应容器中形成在氮化硅膜上之后，通过清洗配方规定的清洗方法处理反应容器，与成膜工艺相容，通过除去表面来抑制气体和颗粒的产生 沉积在反应容器内表面上的部分薄膜，并导致气体和颗粒的产生。 将保持多个晶片W的晶片舟皿25装载到反应容器2中，并且通过由成膜配方1指定的成膜工艺处理晶片W，该成膜方法指定例如Si 2 O 3， Cl 2气体和NH 3气体作为成膜气体。 随后，自动选择指定与成膜过程相容的清洗过程的清洗配方1，并通过清洗配方1规定的清洗处理来处理反应容器2。 从指定与成膜过程相容的清洗处理的多个清洗配方自动选择清洗配方。 清洗时间的不必要的延长被抑制，反应容器2可以通过与成膜过程相容的适当清洗过程进行处理。

公开(公告)号：US20060216949A1

公开(公告)日：2006-09-28

申请号：US10553828

申请日：2004-04-20

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Takashi Chiba ,  Jun Ogawa

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Takashi Chiba ,  Jun Ogawa

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/67109 ,  C23C16/4405

摘要： The present invention is a method of cleaning a heat treatment apparatus that deposits an SiO2 film by mean of TEOS on an object to be processed contained in a treatment vessel capable of forming a vacuum. In the cleaning method, the heat treatment apparatus is cleaned by supplying an HF gas and an NH3 gas into the treatment vessel.

摘要翻译： 本发明是一种清洗热处理装置的方法，该热处理装置通过TEOS将SiO 2膜沉积在能够形成真空的处理容器中的待加工物体上。 在清洗方法中，通过向处理容器供给HF气体和NH 3气体来清洁热处理装置。

公开(公告)号：US20060216941A1

公开(公告)日：2006-09-28

申请号：US10552262

申请日：2004-04-20

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Takashi Chiba ,  Jun Ogawa

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Takashi Chiba ,  Jun Ogawa

IPC分类号： H01L21/306 ,  B44C1/22 ,  C23F1/00

CPC分类号： H01L21/31116

摘要： A silicon dioxide film removing method is capable of removing a silicon dioxide film, such as a natural oxide film or a chemical oxide film, at a temperature considerably higher than a room temperature. The silicon dioxide film removing method of removing a silicon dioxide film formed on a workpiece in a processing vessel 18 that can be evacuated uses a mixed gas containing HF gas and NH3 gas for removing the silicon dioxide film. The silicon dioxide film can be efficiently removed from the surface of the workpiece by using the mixed gas containing HF gas and NH3 gas.

摘要翻译： 二氧化硅膜去除方法能够在比室温高的温度下除去二氧化硅膜，例如天然氧化物膜或化学氧化物膜。 在可以抽真空的处理容器18中去除在工件上形成的二氧化硅膜的二氧化硅膜去除方法使用含有HF气体和NH 3气体的混合气体来除去二氧化硅膜。 通过使用含有HF气体和NH 3气体的混合气体，可以有效地从工件表面除去二氧化硅膜。

公开(公告)号：US07427572B2

公开(公告)日：2008-09-23

申请号：US11186892

申请日：2005-07-22

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada

IPC分类号： H01L21/31

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/3185

摘要： A method for forming a silicon nitride film first deposits a silicon nitride film on a target substrate by CVD in a process field within a reaction container. This step is arranged to supply a first process gas containing a silane family gas and a second process gas containing a nitriding gas to the process field, and set the process field at a first temperature and a first pressure, for a first time period. The method then nitrides a surface of the silicon nitride film in the process field. This step is arranged to supply a surface-treatment gas containing a nitriding gas to the process field without supplying the first process gas, and set the process field at a second temperature and a second pressure, for a second time period shorter than the first time period.

摘要翻译： 用于形成氮化硅膜的方法首先在反应容器内的工艺场中通过CVD沉积目标衬底上的氮化硅膜。 该步骤被布置成将含有硅烷族气体的第一工艺气体和含有氮化气体的第二工艺气体供应到工艺现场，并将工艺场设置在第一温度和第一压力下，持续第一时间段。 该方法然后在工艺领域中氮化氮化硅膜的表面。 该步骤被布置成在不提供第一处理气体的情况下将含有氮化气体的表面处理气体供给到处理场，并将处理场设置在第二温度和第二压力下，比第一次短 期。

公开(公告)号：US20060207504A1

公开(公告)日：2006-09-21

申请号：US11367339

申请日：2006-03-06

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Chaeho Kim ,  Byounghoon Lee ,  Pao-Hwa Chou

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Chaeho Kim ,  Byounghoon Lee ,  Pao-Hwa Chou

IPC分类号： C23C16/00

CPC分类号： C23C16/45512 ,  C23C16/345 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/45578 ,  C23C16/509

摘要： A film formation apparatus for a semiconductor process includes a process gas supply system configured to supply process gases. The process gas supply system includes a gas mixture tank configured to mix first and third process gases to form a mixture gas, a mixture gas supply line configured to supply the mixture gas from the gas mixture tank to a process field, a second process gas supply circuit having a second process gas supply line configured to supply a second process gas to the process field without passing through the gas mixture tank, and first and second switching valves disposed on the mixture gas supply line and the second process gas supply line, respectively. A control section controls the first and second switching valves to be opened and closed so as to alternately and pulse-wise supply the mixture gas and the second process gas to the process field.

公开(公告)号：US20050095826A1

公开(公告)日：2005-05-05

申请号：US10924959

申请日：2004-08-25

申请人： Takehiko Fujita ,  Akitake Tamura ,  Keisuke Suzuki ,  Kazuhide Hasebe ,  Mitsuhiro Okada

发明人： Takehiko Fujita ,  Akitake Tamura ,  Keisuke Suzuki ,  Kazuhide Hasebe ,  Mitsuhiro Okada

IPC分类号： H01L21/324 ,  C23C16/44 ,  C23C16/46 ,  H01L21/00 ,  H01L21/205 ,  H01L21/24

CPC分类号： H01L21/67109 ,  C23C16/4401 ,  C23C16/46

摘要： A method for subjecting target substrates to a heat process under a vacuum pressure includes a transfer step, heating-up and pressure-reducing step, and heat-processing step. The transfer step is arranged to transfer into a reaction chamber a holder that supports the substrates at intervals. The heating-up and pressure-reducing step following the transfer step is arranged to heat up the reaction chamber to a process temperature, and exhaust the reaction chamber to a process pressure. During the heating-up and pressure-reducing step, the reaction chamber is set at the process pressure after being set at the process temperature, to form a state where the reaction chamber has the process temperature under a pressure higher than the process pressure. The heat-processing step following the heating-up and pressure-reducing step is arranged to subject the substrates to the heat process at the process temperature and process pressure.

摘要翻译： 目标基板在真空压力下进行热处理的方法包括转印步骤，升温和减压步骤以及热处理步骤。 传送步骤被布置成将反应室中的间隔地支撑在基板上的保持器。 将转移步骤之后的加热和减压步骤设置成将反应室加热至处理温度，并将反应室排出至处理压力。 在加热和减压步骤期间，将反应室设定为处理温度后的处理压力，形成反应室的处理温度高于处理压力的压力的状态。 在加热和减压步骤之后的热处理步骤被布置成使基板在处理温度和工艺压力下进行热处理。

公开(公告)号：US07758920B2

公开(公告)日：2010-07-20

申请号：US11496436

申请日：2006-08-01

申请人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Jun Ogawa ,  Chaeho Kim ,  Kohei Fukushima ,  Toshiki Takahashi ,  Jun Sato

发明人： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Jun Ogawa ,  Chaeho Kim ,  Kohei Fukushima ,  Toshiki Takahashi ,  Jun Sato

IPC分类号： C23C16/00 ,  H01L21/00

CPC分类号： C23C16/4412 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/45578 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3185

摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a purge gas, a first process gas containing a silane family gas, and a second process gas containing a gas selected from the group consisting of nitriding, oxynitriding, and oxidizing gases. This method alternately includes first to fourth steps. The first, second, third, and fourth steps perform supply of the first process gas, purge gas, second process gas, and purge gas, respectively, while stopping supply of the other two gases. The process field is continuously vacuum-exhausted over the first to fourth steps through an exhaust passage provided with an opening degree adjustment valve. An opening degree of the valve in the first step is set to be 5 to 95% of that used in the second and fourth steps.

摘要翻译： 通过CVD在目标基板上形成含硅绝缘膜，在选择性地供给吹扫气体的工艺领域中，含有硅烷族气体的第一工艺气体和含有选自下组的气体的第二工艺气体 由氮化，氮氧化和氧化气体组成。 该方法交替地包括第一至第四步骤。 第一，第二，第三和第四步骤分别在停止供应其他两种气体的同时分别供应第一处理气体，吹扫气体，第二处理气体和吹扫气体。 通过设置有开度调节阀的排气通道，在第一至第四步骤中连续抽真空排气。 第一步骤中的阀的开度设定为第二和第四步骤中使用的阀门的开启度的5至95％。