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    METHOD TO ADHERE A LAMINA TO A RECEIVER ELEMENT USING GLASS FRIT PASTE
    1.
    发明申请
    METHOD TO ADHERE A LAMINA TO A RECEIVER ELEMENT USING GLASS FRIT PASTE 审中-公开
    使用玻璃纤维浆料将片状物加入接收器元件的方法

    公开(公告)号：US20120052623A1

    公开(公告)日：2012-03-01

    申请号：US12872629

    申请日：2010-08-31

    申请人： Mohamed M. Hilali ,  Venkateswaran Subbaraman ,  John Alexander

    发明人： Mohamed M. Hilali ,  Venkateswaran Subbaraman ,  John Alexander

    IPC分类号： H01L31/18

    CPC分类号： H01L31/1896 ,  H01L31/022425 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method is provided to adhere a lamina to a receiver element using a glass frit mixture. A donor body having a previously defined cleave plane and a receiver element are provided. The glass frit mixture is applied to either the donor body or the receiver element, or both, and is first dried to drive off solvents, then heated to burn out organics. If the glass frit mixture is applied to the receiver, the receiver element and glass frit mixture may be heated to the flow temperature of the frit. Following burn out of organics, the glass frit mixture will undergo no additional outgassing or densification. The receiver element and the donor body are then juxtaposed, the glass frit layer between them. The structure is heated further to permanently adhere the surfaces and to cleave a lamina from the donor body at the cleave plane. A device such as a photovoltaic cell is fabricated, the cell comprising the lamina.

    摘要翻译： 提供了一种使用玻璃料混合物将薄片粘附到接收器元件的方法。 提供具有预定义的解理面和接收器元件的施主体。 将玻璃料混合物施加到供体或受体元件或两者，并且首先被干燥以驱除溶剂，然后加热以烧尽有机物。 如果将玻璃料混合物施加到接收器，则接收器元件和玻璃料混合物可以被加热到玻璃料的流动温度。 烧掉有机物后，玻璃料混合物不会再发生另外的除气或致密化。 然后将接收器元件和供体体并置，它们之间的玻璃料层。 将结构进一步加热以永久地粘合表面并且在分裂面处从施主体切割层。 制造诸如光伏电池的装置，该电池包括薄片。

    Photovoltaic cell comprising a thin lamina having a rear junction and method of making
    3.
    发明授权
    Photovoltaic cell comprising a thin lamina having a rear junction and method of making 有权
    光伏电池包括具有后连接的薄层和制造方法

    公开(公告)号：US08338209B2

    公开(公告)日：2012-12-25

    申请号：US12189158

    申请日：2008-08-10

    申请人： Mohamed M. Hilali ,  Christopher J. Petti

    发明人： Mohamed M. Hilali ,  Christopher J. Petti

    IPC分类号： H01L21/00 ,  H01L31/00

    CPC分类号： H01L31/0248 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

    摘要： Fabrication of a photovoltaic cell comprising a thin semiconductor lamina may require additional processing after the semiconductor lamina is bonded to a receiver. To minimize high-temperature steps after bonding, the p−n junction is formed at the back of the cell, at the bonded surface. In some embodiments, the front surface of the semiconductor lamina is not doped or is locally doped using low-temperature methods. The base resistivity of the photovoltaic cell may be reduced, allowing a front surface field to be reduced or omitted.

    摘要翻译： 在半导体层结合到接收器之后，包括薄半导体层的光伏电池的制造可能需要额外的处理。 为了使结合后的高温步骤最小化，在接合表面处，在电池背面形成p-n结。 在一些实施例中，半导体薄片的前表面不是掺杂的或使用低温方法局部掺杂。 可以减小光伏电池的基极电阻率，从而可以减小或省略前表面场。

    Method to Form a Device by Constructing a Support Element on a Thin Semiconductor Lamina
    4.
    发明申请
    Method to Form a Device by Constructing a Support Element on a Thin Semiconductor Lamina 失效
    通过在薄型半导体层上构造支撑元件来形成器件的方法

    公开(公告)号：US20120220068A1

    公开(公告)日：2012-08-30

    申请号：US13450414

    申请日：2012-04-18

    申请人： Christopher J. Petti ,  Mohamed M. Hilali ,  Theodore Smick ,  Venkatesan Murali ,  Kathy J. Jackson ,  Zhiyong Li ,  Gopalakrishna Prabhu

    发明人： Christopher J. Petti ,  Mohamed M. Hilali ,  Theodore Smick ,  Venkatesan Murali ,  Kathy J. Jackson ,  Zhiyong Li ,  Gopalakrishna Prabhu

    IPC分类号： H01L31/0376 ,  H01L31/18

    CPC分类号： H01L31/1892 ,  H01L31/0747 ,  H01L31/1864 ,  Y02E10/50

    摘要： A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved.Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal.

    摘要翻译： 描述了半导体组件，其中在半导体层的表面上构造支撑元件。 形成厚度约为50微米或更小的薄层之后，例如通过镀覆或通过施加前体和原位固化来形成支撑元件，得到支撑元件，其可以用于 例如，金属，陶瓷，聚合物等。这与预先形成的支撑元件形成对比，该预制形成的支撑元件在其形成之后固定到层板上，或者与施加器晶片相接触，该晶片随后被切割。 原位制造支撑元件可以避免使用粘合剂将薄片附着到永久支撑元件上。 在一些实施例中，该工艺流程允许薄层在高温下退火，然后在该退火之后具有在层的每个表面上形成的非晶硅层。

    Method to form a device by constructing a support element on a thin semiconductor lamina
    5.
    发明授权
    Method to form a device by constructing a support element on a thin semiconductor lamina 有权
    通过在薄半导体层上构造支撑元件来形成器件的方法

    公开(公告)号：US08173452B1

    公开(公告)日：2012-05-08

    申请号：US12980424

    申请日：2010-12-29

    申请人： Christopher J. Petti ,  Mohamed M. Hilali ,  Theodore Smick ,  Venkatesan Murali ,  Kathy J. Jackson ,  Zhiyong Li ,  Gopalakrishna Prabhu

    发明人： Christopher J. Petti ,  Mohamed M. Hilali ,  Theodore Smick ,  Venkatesan Murali ,  Kathy J. Jackson ,  Zhiyong Li ,  Gopalakrishna Prabhu

    IPC分类号： H01L21/00

    CPC分类号： H01L31/1892 ,  H01L31/0747 ,  H01L31/1864 ,  Y02E10/50

    摘要： A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to a rigid or semi-rigid pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved. Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element; such adhesives may be unable to tolerate processing temperatures and conditions required to complete the device. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal. A device may be formed which comprises the lamina, such as a photovoltaic cell.

    摘要翻译： 描述了半导体组件，其中在半导体层的表面上构造支撑元件。 形成厚度约为50微米或更小的薄层之后，例如通过镀覆或通过施加前体和原位固化来形成支撑元件，得到支撑元件，其可以用于 例如，金属，陶瓷，聚合物等。这与刚性或半刚性的预成形支撑元件形成对比，该刚性或半刚性的预成型支撑元件在其形成之后固定到层板上，或者与施加器晶片相接触，其中层板随后被切割。 原位制造支撑元件可以避免使用粘合剂将薄片附着到永久支撑元件上; 这种粘合剂可能不能容忍完成装置所需的加工温度和条件。 在一些实施例中，该工艺流程允许薄层在高温下退火，然后在该退火之后具有在层的每个表面上形成的非晶硅层。 可以形成包括层的器件，例如光伏电池。

    METHOD TO MAKE ELECTRICAL CONTACT TO A BONDED FACE OF A PHOTOVOLTAIC CELL
    6.
    发明申请
    METHOD TO MAKE ELECTRICAL CONTACT TO A BONDED FACE OF A PHOTOVOLTAIC CELL 有权
    使电接触到光伏电池的结合面的方法

    公开(公告)号：US20100240169A1

    公开(公告)日：2010-09-23

    申请号：US12407064

    申请日：2009-03-19

    申请人： Christopher J. Petti ,  Mohamed M. Hilali

    发明人： Christopher J. Petti ,  Mohamed M. Hilali

    IPC分类号： H01L21/78

    CPC分类号： H01L31/068 ,  H01L21/76254 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/0682 ,  H01L31/1892 ,  Y02E10/547

    摘要： A photovoltaic cell is formed by bonding a donor body to a receiver element and cleaving a thin lamina from the donor body. Electrical contact is made to the bonded surface of the lamina through vias formed in the lamina. In some embodiments the emitter exists only at the bonded surface or only at the cleaved surface face; the emitter does not wrap through the vias between the surfaces. Wiring contacting each of the two surfaces is formed only at the cleaved face, and one set of wiring contacts the bonded surface through conductive material formed in the vias, insulated from the via sidewalls.

    摘要翻译： 通过将施主体接合到接收器元件并从施主体切割薄层而形成光伏电池。 通过层中形成的通孔对薄片的粘合表面进行电接触。 在一些实施方案中，发射体仅存在于接合表面处或仅在切割的表面处存在; 发射器不会穿过表面之间的通孔。 仅在断裂面形成接触两个表面中的每一个的布线，并且一组布线通过与通孔侧壁绝缘的通孔中形成的导电材料与接合表面接触。

    FRONT CONNECTED PHOTOVOLTAIC ASSEMBLY AND ASSOCIATED METHODS
    7.
    发明申请
    FRONT CONNECTED PHOTOVOLTAIC ASSEMBLY AND ASSOCIATED METHODS 审中-公开
    前连接的光伏组件及相关方法

    公开(公告)号：US20100139755A1

    公开(公告)日：2010-06-10

    申请号：US12331376

    申请日：2008-12-09

    申请人： Christopher J. Petti ,  Mohamed M. Hilali ,  S. Brad Herner

    发明人： Christopher J. Petti ,  Mohamed M. Hilali ,  S. Brad Herner

    IPC分类号： H01L31/00 ,  H01L31/18

    CPC分类号： H01L31/02008 ,  H01L31/022433 ,  H01L31/0475 ,  H01L31/0508 ,  H01L31/0747 ,  H01L31/1892 ,  Y02E10/50

    摘要： A photovoltaic device is disclosed herein that, in various aspects, includes a conductive layer, and a substantially crystalline lamina with a first surface oriented toward the conductive layer and a second surface oriented away from the conductive layer. The lamina thickness is within the range between about 0.2 microns and about 50 microns. An aperture passes through the lamina from the first surface to the second surface. A connector in electrical communication with the conductive layer is disposed through the aperture. Methods of manufacture of the photovoltaic devise are also disclosed.

    摘要翻译： 本文公开了一种光电器件，其在各个方面包括导电层，以及具有朝向导电层的第一表面的基本上为晶体的层，以及远离导电层的第二表面。 层厚度在约0.2微米至约50微米之间的范围内。 孔从第一表面到第二表面通过层。 与导电层电连通的连接器穿过孔设置。 还公开了光伏设备的制造方法。

    Photovoltaic cell comprising contact regions doped through a lamina
    8.
    发明授权
    Photovoltaic cell comprising contact regions doped through a lamina 失效
    包括通过层间掺杂的接触区域的光伏电池

    公开(公告)号：US08633374B2

    公开(公告)日：2014-01-21

    申请号：US12339038

    申请日：2008-12-18

    申请人： Mohamed M. Hilali ,  Christopher J. Petti ,  S. Brad Herner

    发明人： Mohamed M. Hilali ,  Christopher J. Petti ,  S. Brad Herner

    IPC分类号： H01L31/00

    CPC分类号： H01L31/03921 ,  H01L21/187 ,  H01L21/76254 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

    摘要： In aspects of the present invention, a lamina is formed having opposing first and second surfaces. Heavily doped contact regions extend from the first surface to the second surface. Generally the lamina is formed by affixing a semiconductor donor body to a receiver element, then cleaving the lamina from the semiconductor donor body wherein the lamina remains affixed to the receiver element. In the present invention, the heavily doped contact regions are formed by doping the semiconductor donor body before cleaving of the lamina. A photovoltaic cell comprising the lamina is then fabricated. By forming the heavily doped contact regions before bonding to the receiver element and cleaving, post-bonding high-temperature steps can be avoided, which may be advantageous.

    摘要翻译： 在本发明的方面中，形成具有相对的第一和第二表面的层。 重掺杂的接触区域从第一表面延伸到第二表面。 通常，通过将半导体施主体附着到接收器元件，然后从半导体施主体分离薄层而形成薄片，其中薄片保持固定在接收器元件上。 在本发明中，重掺杂的接触区域通过在切割层之前掺杂半导体施主体形成。 然后制造包括层板的光伏电池。 通过在接合元件接合之前形成重掺杂的接触区域并且断开，可以避免后接合高温步骤，这可能是有利的。

    SELECTIVE ETCH FOR DAMAGE AT EXFFOLIATED SURFACE
    10.
    发明申请
    SELECTIVE ETCH FOR DAMAGE AT EXFFOLIATED SURFACE 有权
    选择性蚀刻在损伤表面的损伤

    公开(公告)号：US20100317145A1

    公开(公告)日：2010-12-16

    申请号：US12484271

    申请日：2009-06-15

    申请人： Mark H. Clark ,  S. Brad Herner ,  Mohamed M. Hilali

    发明人： Mark H. Clark ,  S. Brad Herner ,  Mohamed M. Hilali

    IPC分类号： H01L31/18 ,  H01L21/30

    CPC分类号： H01L21/30604 ,  H01L21/76254 ,  H01L31/028 ,  H01L31/068 ,  H01L31/1892 ,  Y02E10/547

    摘要： Ions are implanted into a silicon donor body, defining a cleave plane. A first surface of the donor body is affixed to a receiver element, and a lamina is exfoliated at the cleave plane, creating a second surface of the lamina. There is damaged silicon at the second surface, which will compromise the efficiency of a photovoltaic cell formed from the lamina. A selective etchant, having an etch rate which is positively correlated with the concentration of structural defects in silicon, is used to remove the damaged silicon at the second surface, while removing very little of the relatively undamaged lamina.

    摘要翻译： 离子被植入到硅供体体内，限定了一个解理面。 供体主体的第一表面固定在接受元件上，并且在分裂面上剥离薄片，形成薄片的第二表面。 在第二表面有损坏的硅，这将损害由薄片形成的光伏电池的效率。 使用具有与硅中的结构缺陷的浓度正相关的蚀刻速率的选择性蚀刻剂来除去第二表面处的损坏的硅，同时去除非常少的相对未损伤的层。