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1.发明申请Methods of forming low interface resistance rare earth metal contacts and structures formed thereby 有权形成低界面电阻的稀土金属触点和由此形成的结构的方法公开(公告)号：US20100155954A1
公开(公告)日：2010-06-24
申请号：US12317180
申请日：2008-12-18
申请人： Niloy Mukherjee , Matt Metz , Gilbert Dewey , Jack Kavalieros , Robert S. Chau
发明人： Niloy Mukherjee , Matt Metz , Gilbert Dewey , Jack Kavalieros , Robert S. Chau
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L21/28518 , H01L21/76814
摘要： Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a contact opening in an inter layer dielectric (ILD) disposed on a substrate, wherein a source/drain contact area is exposed, forming a rare earth metal layer on the source/drain contact area, forming a transition metal layer on the rare earth metal layer; and annealing the rare earth metal layer and the transition metal layer to form a metal silicide stack structure.
摘要翻译： 描述形成微电子器件的方法和相关结构。 这些方法可以包括在设置在基板上的层间电介质（ILD）中形成接触开口，其中暴露源极/漏极接触区域，在源极/漏极接触区域上形成稀土金属层，形成过渡金属层 在稀土金属层上; 并对稀土金属层和过渡金属层退火以形成金属硅化物堆叠结构。
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2.发明授权Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processes 有权使用保形沉积和热生长工艺制造金属 - 绝缘体 - 半导体隧穿触点的方法公开(公告)号：US08952541B2
公开(公告)日：2015-02-10
申请号：US13352062
申请日：2012-01-17
IPC分类号： H01L21/768 , H01L29/08 , H01L23/485 , H01L29/66 , H01L29/45 , H01L29/417 , H01L21/8234 , H01L29/78 , H01L21/285 , H01L29/51
CPC分类号： H01L29/517 , H01L21/285 , H01L21/28512 , H01L21/76831 , H01L21/823418 , H01L21/823431 , H01L21/823475 , H01L23/485 , H01L29/0895 , H01L29/41791 , H01L29/452 , H01L29/456 , H01L29/518 , H01L29/66545 , H01L29/66795 , H01L29/78 , H01L29/785 , H01L2924/0002 , H01L2924/00
摘要： A contact may be fabricated by a method including depositing a dielectric layer on a substrate having a transistor, etching a first opening in the dielectric layer that extends to a source region, forming an insulator on the source region, forming a contact metal on the insulator, the insulator separating the contact metal from the source region, and filling substantially all of the first opening, wherein the contact metal remains separated from the source region after the first opening is filled.
摘要翻译： 接触可以通过包括在具有晶体管的衬底上沉积电介质层的方法来制造，蚀刻延伸到源极区的电介质层中的第一开口，在源区上形成绝缘体，在绝缘体上形成接触金属 所述绝缘体将所述接触金属与所述源极区分离，并且基本上填充所述第一开口，其中所述接触金属在所述第一开口被填充之后保持与所述源极区分离。
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公开(公告)号：US08344425B2
公开(公告)日：2013-01-01
申请号：US12655463
申请日：2009-12-30
申请人： Marko Radosavljevic , Uday Shah , Gilbert Dewey , Niloy Mukherjee , Robert S. Chau , Jack Kavalieros , Ravi Pillarisetty , Titash Rakshit , Matthew V. Metz
发明人： Marko Radosavljevic , Uday Shah , Gilbert Dewey , Niloy Mukherjee , Robert S. Chau , Jack Kavalieros , Ravi Pillarisetty , Titash Rakshit , Matthew V. Metz
IPC分类号： H01L29/12 , H01L21/20 , H01L21/336 , H01L21/18
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y40/00 , H01L29/0673 , H01L29/42364 , H01L29/66462 , H01L29/66795 , H01L29/7786 , H01L29/785
摘要： Methods of forming microelectronic structures are described. Embodiments of those methods include forming a III-V tri-gate fin on a substrate, forming a cladding material around the III-V tri-gate fin, and forming a hi k gate dielectric around the cladding material.
摘要翻译： 描述形成微电子结构的方法。 这些方法的实施例包括在基板上形成III-V三栅极翅片，在III-V三栅极鳍周围形成包层材料，以及在包层材料周围形成Hi栅极电介质。
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公开(公告)号：US20100155846A1
公开(公告)日：2010-06-24
申请号：US12317126
申请日：2008-12-19
CPC分类号： H01L29/517 , H01L21/285 , H01L21/28512 , H01L21/76831 , H01L21/823418 , H01L21/823431 , H01L21/823475 , H01L23/485 , H01L29/0895 , H01L29/41791 , H01L29/452 , H01L29/456 , H01L29/518 , H01L29/66545 , H01L29/66795 , H01L29/78 , H01L29/785 , H01L2924/0002 , H01L2924/00
摘要： A contact to a source or drain region. The contact has a conductive material, but that conductive material is separated from the source or drain region by an insulator.
摘要翻译： 与源极或漏极区的接触。 接触件具有导电材料，但是导电材料通过绝缘体与源极或漏极区域分离。
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公开(公告)号：US08901740B2
公开(公告)日：2014-12-02
申请号：US13352062
申请日：2012-01-17
IPC分类号： H01L21/768 , H01L29/45 , H01L21/8234 , H01L23/485 , H01L29/66 , H01L21/285 , H01L29/417 , H01L29/08 , H01L29/51 , H01L29/78
摘要： A contact may be fabricated by a method including depositing a dielectric layer on a substrate having a transistor, etching a first opening in the dielectric layer that extends to a source region, forming an insulator on the source region, forming a contact metal on the insulator, the insulator separating the contact metal from the source region, and filling substantially all of the first opening, wherein the contact metal remains separated from the source region after the first opening is filled.
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公开(公告)号：US20120115330A1
公开(公告)日：2012-05-10
申请号：US13352062
申请日：2012-01-17
IPC分类号： H01L21/768
CPC分类号： H01L29/517 , H01L21/285 , H01L21/28512 , H01L21/76831 , H01L21/823418 , H01L21/823431 , H01L21/823475 , H01L23/485 , H01L29/0895 , H01L29/41791 , H01L29/452 , H01L29/456 , H01L29/518 , H01L29/66545 , H01L29/66795 , H01L29/78 , H01L29/785 , H01L2924/0002 , H01L2924/00
摘要： A contact to a source or drain region. The contact has a conductive material, but that conductive material is separated from the source or drain region by an insulator.
摘要翻译： 与源极或漏极区的接触。 接触件具有导电材料，但是导电材料通过绝缘体与源极或漏极区域分离。
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7.发明授权Metal-insulator-semiconductor tunneling contacts having an insulative layer disposed between source/drain contacts and source/drain regions 有权金属 - 绝缘体 - 半导体隧穿触点具有设置在源极/漏极触点和源极/漏极区之间的绝缘层公开(公告)号：US08110877B2
公开(公告)日：2012-02-07
申请号：US12317126
申请日：2008-12-19
IPC分类号： H01L29/78 , H01L21/04 , H01L29/772 , H01L29/417 , H01L21/768 , H01L21/28
CPC分类号： H01L29/517 , H01L21/285 , H01L21/28512 , H01L21/76831 , H01L21/823418 , H01L21/823431 , H01L21/823475 , H01L23/485 , H01L29/0895 , H01L29/41791 , H01L29/452 , H01L29/456 , H01L29/518 , H01L29/66545 , H01L29/66795 , H01L29/78 , H01L29/785 , H01L2924/0002 , H01L2924/00
摘要： A contact to a source or drain region. The contact has a conductive material, but that conductive material is separated from the source or drain region by an insulator.
摘要翻译： 与源极或漏极区的接触。 接触件具有导电材料，但是导电材料通过绝缘体与源极或漏极区域分离。
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公开(公告)号：US20110156004A1
公开(公告)日：2011-06-30
申请号：US12655463
申请日：2009-12-30
申请人： Marko Radosavljevic , Uday Shah , Gilbert Dewey , Niloy Mukherjee , Robert S. Chau , Jack Kavalieros , Ravi Pillarisetty , Titash Rakshit , Matthew V. Metz
发明人： Marko Radosavljevic , Uday Shah , Gilbert Dewey , Niloy Mukherjee , Robert S. Chau , Jack Kavalieros , Ravi Pillarisetty , Titash Rakshit , Matthew V. Metz
IPC分类号： H01L29/775 , H01L21/20 , H01L21/336
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y40/00 , H01L29/0673 , H01L29/42364 , H01L29/66462 , H01L29/66795 , H01L29/7786 , H01L29/785
摘要： Methods of forming microelectronic structures are described. Embodiments of those methods include forming a III-V tri-gate fin on a substrate, forming a cladding material around the III-V tri-gate fin, and forming a hi k gate dielectric around the cladding material.
摘要翻译： 描述形成微电子结构的方法。 这些方法的实施例包括在基板上形成III-V三栅极翅片，在III-V三栅极鳍周围形成包层材料，以及在包层材料周围形成Hi栅极电介质。
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公开(公告)号：US07968457B2
公开(公告)日：2011-06-28
申请号：US12229881
申请日：2008-08-26
申请人： Niloy Mukherjee , Matthew V. Metz , Willy Rachmady , Gilbert Dewey , Jack Kavalieros , Robert S. Chau
发明人： Niloy Mukherjee , Matthew V. Metz , Willy Rachmady , Gilbert Dewey , Jack Kavalieros , Robert S. Chau
IPC分类号： H01L21/44 , H01L21/3205 , H01L21/4763
CPC分类号： H01L21/28518 , H01L21/76846 , H01L21/76864 , H01L21/76867 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of an apparatus and methods for forming enhanced contacts using sandwiched metal structures are generally described herein. Other embodiments may be described and claimed.
摘要翻译： 本文通常描述使用夹层金属结构形成增强触点的装置和方法的实施例。 可以描述和要求保护其他实施例。
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公开(公告)号：US08785907B2
公开(公告)日：2014-07-22
申请号：US13722746
申请日：2012-12-20
申请人： Niti Goel , Niloy Mukherjee , Seung Hoon Sung , Van H. Le , Matthew V. Metz , Jack T. Kavalieros , Ravi Pillarisetty , Sanaz K. Gardner , Sansaptak Dasgupta , Willy Rachmady , Benjamin Chu-Kung , Marko Radosavljevic , Gilbert Dewey , Marc C. French , Jessica Kachian , Satyarth Suri , Robert S. Chau
发明人： Niti Goel , Niloy Mukherjee , Seung Hoon Sung , Van H. Le , Matthew V. Metz , Jack T. Kavalieros , Ravi Pillarisetty , Sanaz K. Gardner , Sansaptak Dasgupta , Willy Rachmady , Benjamin Chu-Kung , Marko Radosavljevic , Gilbert Dewey , Marc C. French , Jessica Kachian , Satyarth Suri , Robert S. Chau
IPC分类号： H01L29/06
CPC分类号： H01L21/764 , H01L21/02381 , H01L21/0245 , H01L21/02494 , H01L21/02507 , H01L21/02532 , H01L21/76232
摘要： An embodiment includes depositing a material onto a substrate where the material includes a different lattice constant than the substrate (e.g., III-V or IV epitaxial (EPI) material on a Si substrate). An embodiment includes an EPI layer formed within a trench having walls that narrow as the trench extends upwards. An embodiment includes an EPI layer formed within a trench using multiple growth temperatures. A defect barrier, formed in the EPI layer when the temperature changes, contains defects within the trench and below the defect barrier. The EPI layer above the defect barrier and within the trench is relatively defect free. An embodiment includes an EPI layer annealed within a trench to induce defect annihilation. An embodiment includes an EPI superlattice formed within a trench and covered with a relatively defect free EPI layer (that is still included in the trench). Other embodiments are described herein.
摘要翻译： 实施例包括将材料沉积到衬底上，其中材料包括与衬底（例如Si衬底上的III-V或IV外延（EPI）材料）不同的晶格常数。 一个实施例包括形成在沟槽内的EPI层，其具有随着沟槽向上延伸而变窄的壁。 实施例包括使用多个生长温度在沟槽内形成的EPI层。 当温度变化时，在EPI层中形成的缺陷屏障在沟槽内和缺陷屏障之下包含缺陷。 缺陷屏障之上和沟槽内的EPI层相对无缺陷。 一个实施方案包括在沟槽内退火以引发缺陷湮灭的EPI层。 一个实施例包括形成在沟槽内并覆盖有相对无缺陷的EPI层（仍包含在沟槽中）的EPI超晶格。 本文描述了其它实施例。
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