METHOD FOR PRODUCING INFRARED RADIATION REFLECTING FILM
    2.
    发明申请
    METHOD FOR PRODUCING INFRARED RADIATION REFLECTING FILM 审中-公开
    生产红外辐射反射膜的方法

    公开(公告)号:US20160145736A1

    公开(公告)日:2016-05-26

    申请号:US14764767

    申请日:2014-01-30

    Abstract: The method for manufacturing an infrared reflecting film comprises, in order: a metal layer forming step of depositing a metal layer on a transparent film substrate; a metal oxide layer forming step of depositing a surface-side metal oxide layer by DC sputtering on the metal layer so as to be in direct contact with the metal layer; and a transparent protective layer forming step of depositing a transparent protective layer on the surface-side metal oxide layer. In the metal oxide layer forming step, a sputtering target used for DC sputtering contains zinc atoms and tin atoms, and is preferably formed by sintering a metal powder and at least one metal oxide among zinc oxide and tin oxide. In the surface-side metal oxide layer forming step, an inert gas and an oxygen gas are introduced into a sputtering chamber. The oxygen concentration in the gas introduced to the sputtering chamber is preferably not more than 8 vol %.

    Abstract translation: 制造红外线反射膜的方法依次包括:在透明膜基材上沉积金属层的金属层形成步骤; 金属氧化物层形成步骤,通过DC溅射在所述金属层上沉积表面侧金属氧化物层以与所述金属层直接接触; 以及在表面侧金属氧化物层上形成透明保护层的透明保护层形成工序。 在金属氧化物层形成工序中,用于DC溅射的溅射靶含有锌原子和锡原子,优选通过在氧化锌和氧化锡中烧结金属粉末和至少一种金属氧化物而形成。 在表面侧金属氧化物层形成工序中,将惰性气体和氧气引入溅射室。 导入溅射室的气体中的氧浓度优选为8体积%以下。

    INFRARED-RAY REFLECTIVE FILM
    4.
    发明申请
    INFRARED-RAY REFLECTIVE FILM 有权
    红外线反射膜

    公开(公告)号:US20160047958A1

    公开(公告)日:2016-02-18

    申请号:US14784211

    申请日:2014-03-19

    Abstract: An infrared-ray reflective film (100) of the present invention is configured by disposing an infrared reflective layer (20) and a transparent protective layer (30) on a transparent film backing (10) in this order. The infrared reflective layer (20) comprises: a first metal oxide layer (21); a metal layer (25) made of a silver alloy containing silver in an amount of 96 to 99.9 weight%; and a second metal oxide layer (22), which are arranged in this order from the side of the transparent film backing (10), wherein each of the first metal oxide layer (21) and the second metal oxide layer (22) is in direct contact with the metal layer (25). There is no metal layer between the transparent film backing (10) and the infrared reflective layer (20) and between the infrared reflective layer (20) and the transparent protective layer (30). Preferably, the infrared-ray reflective film of the present invention has a visible ray transmittance of 65% or more, a shading coefficient of less than 0.60, and a corrected emissivity as measured from the side of the transparent protective layer of 0.20 or less.

    Abstract translation: 本发明的红外线反射膜(100)依次配置在透明膜背衬(10)上的红外线反射层(20)和透明保护层(30)。 红外反射层(20)包括:第一金属氧化物层(21); 由银合金制成的金属层(25),其含有量为96〜99.9重量%的银; 和第二金属氧化物层(22),所述第二金属氧化物层(22)从透明膜背衬(10)侧依次排列,其中第一金属氧化物层(21)和第二金属氧化物层(22)中的每一个处于 与金属层(25)直接接触。 透明膜背衬(10)和红外线反射层(20)之间以及红外线反射层(20)和透明保护层(30)之间没有金属层。 优选地,本发明的红外线反射膜的可见光线透射率为65%以上,遮光系数小于0.60,从透明保护层侧测定的发光率为0.20以下。

    HEAT-SHIELDING HEAT INSULATING SUBSTRATE

    公开(公告)号:US20210114360A1

    公开(公告)日:2021-04-22

    申请号:US16497930

    申请日:2018-03-28

    Abstract: The heat-shielding heat insulating substrate is a heat-shielding heat insulating substrate including a transparent substrate layer and an infrared reflection layer, the heat-shielding heat insulating substrate including: a protective topcoat layer arranged on a side of the infrared reflection layer opposite to the transparent substrate layer; and a protective film arranged on a surface of the protective topcoat layer opposite to the infrared reflection layer, wherein a 180° peel strength of the protective film to the protective topcoat layer under an environment having a temperature of 23±1° C. and a humidity of 50±5% RH is from 0.01 N/50 mm to 0.40 N/50 mm, and wherein a 180° peel strength of the protective film to the protective topcoat layer after storage of the heat-shielding heat insulating substrate under an environment having a temperature of 80±1° C. for 10 days is from 0.01 N/50 mm to 1.0 N/50 mm.

    INFRARED REFLECTIVE FILM
    7.
    发明申请
    INFRARED REFLECTIVE FILM 审中-公开
    红外反射膜

    公开(公告)号:US20160003989A1

    公开(公告)日:2016-01-07

    申请号:US14765296

    申请日:2014-01-30

    Abstract: Disclosed is an infrared reflective film (100) configured by disposing an infrared ray reflective layer (20) and a transparent protective layer (30) on a transparent film backing (10) in this order. The infrared ray reflective layer (20) comprises: a first metal oxide layer (21); a metal layer (25) comprising a primary component consisting of silver; and a second metal oxide layer (22) comprised of a composite metal oxide containing zinc oxide and tin oxide, which are arranged in this order from the side of the transparent film backing (10). The transparent protective layer (30) lies in direct contact with the second metal oxide layer (22). The transparent protective layer (30) has a thickness of 30 nm to 150 nm, and is preferably an organic layer having a cross-linked structure derived from an ester compound having an acidic group and a polymerizable functional group in the same molecule.

    Abstract translation: 公开了一种红外线反射膜(100),其通过依次将红外线反射层(20)和透明保护层(30)设置在透明膜背衬(10)上而构成。 红外线反射层(20)包括:第一金属氧化物层(21); 包含由银组成的主要组分的金属层(25) 以及由透明膜背衬(10)侧依次配置的由氧化锌和氧化锡构成的复合金属氧化物构成的第二金属氧化物层(22)。 透明保护层(30)与第二金属氧化物层(22)直接接触。 透明保护层(30)的厚度为30nm〜150nm,优选为在同一分子中具有酸性基团和聚合性官能团的酯化合物的交联结构的有机层。

    NITRIDE LAMINATE AND MANUFACTURING METHOD OF THE SAME

    公开(公告)号:US20230121803A1

    公开(公告)日:2023-04-20

    申请号:US17911616

    申请日:2021-03-02

    Abstract: A nitride laminate, in which contamination in the nitride layer is suppressed and crystallinity is improved, is provided. A nitride laminate includes a polymer substrate, and a nitride layer provided on at least one of the surfaces of the polymer substrate. The nitride layer has a wurtzite crystal structure. The atomic proportion of oxygen in the nitride layer is 2.5 atm. % or less, and the atomic proportion of hydrogen in the nitride layer is 2.0 atm. % or less. The FWHM of the X-ray rocking curve of the nitride layer is 8 degree or less.

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