Method for making a pressure sensor
    1.
    发明申请
    Method for making a pressure sensor 有权
    制造压力传感器的方法

    公开(公告)号:US20060076855A1

    公开(公告)日:2006-04-13

    申请号:US11139207

    申请日:2005-05-27

    Abstract: A pressure sensor including a movable component that is configured to move when the pressure sensor is exposed to differential pressure thereacross, and a pressure sensing component located on the movable component. The pressure sensing component includes an electrically conductive electron gas which changes its electrical resistance thereacross upon movement of the movable component. The pressure sensor is configured such that leads can be coupled to the pressure sensing component and the pressure sensing component can output a signal via the leads, the signal being related to a pressure to which the pressure sensor is exposed.

    Abstract translation: 一种压力传感器,包括被构造成当压力传感器暴露于其间的差压时移动的可移动部件以及位于可移动部件上的压力感测部件。 压力感测部件包括导电电子气体,其在可移动部件移动时改变其电阻。 压力传感器被配置为使得引线可以耦合到压力感测部件,并且压力感测部件可以经由引线输出信号,该信号与压力传感器暴露于的压力相关。

    High temperature resistant solid state pressure sensor
    2.
    发明申请
    High temperature resistant solid state pressure sensor 审中-公开
    耐高温固态压力传感器

    公开(公告)号:US20070013014A1

    公开(公告)日:2007-01-18

    申请号:US11523244

    申请日:2006-09-19

    Abstract: A harsh environment transducer including a substrate having a first surface and a second surface, wherein the second surface is in communication with the environment. The transducer includes a device layer sensor means located on the substrate for measuring a parameter associated with the environment. The sensor means including a single crystal semiconductor material having a thickness of less than about 0.5 microns. The transducer further includes an output contact located on the substrate and in electrical communication with the sensor means. The transducer includes a package having an internal package space and a port for communication with the environment. The package receives the substrate in the internal package space such that the first surface of the substrate is substantially isolated from the environment and the second surface of the substrate is substantially exposed to the environment through the port. The transducer further includes a connecting component coupled to the package and a wire electrically connecting the connecting component and the output contact such that an output of the sensor means can be communicated. An external surface of the wire is substantially platinum, and an external surface of at least one of the output contact and the connecting component is substantially platinum.

    Abstract translation: 一种恶劣环境换能器,包括具有第一表面和第二表面的基底,其中第二表面与环境连通。 换能器包括位于基板上的用于测量与环境有关的参数的装置层传感器装置。 传感器装置包括厚度小于约0.5微米的单晶半导体材料。 换能器还包括位于基板上并与传感器装置电连通的输出触点。 换能器包括具有内部封装空间和用于与环境通信的端口的封装。 该封装在内部封装空间中接收衬底,使得衬底的第一表面基本上与环境隔离,并且衬底的第二表面基本上通过端口暴露于环境。 传感器还包括耦合到封装件的连接部件和将连接部件和输出触头电连接的导线,使得传感器装置的输出可以被传送。 导线的外表面基本上是铂,并且输出触点和连接部件中的至少一个的外表面基本上是铂。

    High temperature capacitive static/dynamic pressure sensors and methods of making the same

    公开(公告)号:US20120024073A1

    公开(公告)日:2012-02-02

    申请号:US12804874

    申请日:2010-07-30

    Applicant: Shuwen Guo

    Inventor: Shuwen Guo

    CPC classification number: G01L9/0075 G01L19/04 Y10T29/49002

    Abstract: Disclosed are capacitive pressure probes or sensors for high temperature applications. The capacitive pressure sensors of the present invention include, inter alia, a sapphire diaphragm which is disposed within an interior sensing chamber of the probe housing and has a first electrode formed on a central portion thereof. The central portion of the diaphragm and the first electrode are adapted and configured to deflect in response to pressure variations encountered within an interior sensing chamber and by the pressure sensor. A sapphire substrate which has a second electrode formed thereon is fused to the sapphire diaphragm about its periphery to form a sapphire stack and to define a reference chamber therebetween. Prior to fusing the sapphire diaphragm to the sapphire substrate, all contact surfaces are chemically treated and prepared using plasma activation, so as to create a bonding layer and to reduce the temperature required for the fusion.

    High temperature resistant solid state pressure sensor
    5.
    发明授权
    High temperature resistant solid state pressure sensor 有权
    耐高温固态压力传感器

    公开(公告)号:US07952154B2

    公开(公告)日:2011-05-31

    申请号:US12579123

    申请日:2009-10-14

    Abstract: A harsh environment transducer including a substrate having a first surface and a second surface, wherein the second surface is in communication with the environment. The transducer includes a device layer sensor means located on the substrate for measuring a parameter associated with the environment. The sensor means including a single crystal semiconductor material having a thickness of less than about 0.5 microns. The transducer further includes an output contact located on the substrate and in electrical communication with the sensor means. The transducer includes a package having an internal package space and a port for communication with the environment. The package receives the substrate in the internal package space such that the first surface of the substrate is substantially isolated from the environment and the second surface of the substrate is substantially exposed to the environment through the port. The transducer further includes a connecting component coupled to the package and a wire electrically connecting the connecting component and the output contact such that an output of the sensor means can be communicated. An external surface of the wire is substantially platinum, and an external surface of at least one of the output contact and the connecting component is substantially platinum.

    Abstract translation: 一种恶劣环境换能器,包括具有第一表面和第二表面的基底,其中第二表面与环境连通。 换能器包括位于基板上的用于测量与环境有关的参数的装置层传感器装置。 传感器装置包括厚度小于约0.5微米的单晶半导体材料。 换能器还包括位于基板上并与传感器装置电连通的输出触点。 换能器包括具有内部封装空间和用于与环境通信的端口的封装。 该封装在内部封装空间中接收衬底,使得衬底的第一表面基本上与环境隔离,并且衬底的第二表面基本上通过端口暴露于环境。 传感器还包括耦合到封装件的连接部件和将连接部件和输出触头电连接的导线,使得传感器装置的输出可以被传送。 导线的外表面基本上是铂,并且输出触点和连接部件中的至少一个的外表面基本上是铂。

    Wafer process flow for a high performance MEMS accelerometer
    6.
    发明授权
    Wafer process flow for a high performance MEMS accelerometer 失效
    用于高性能MEMS加速度计的晶圆工艺流程

    公开(公告)号:US07736931B1

    公开(公告)日:2010-06-15

    申请号:US12506022

    申请日:2009-07-20

    Applicant: Shuwen Guo

    Inventor: Shuwen Guo

    CPC classification number: G01P15/0802 G01P15/02

    Abstract: A process for fabricating a pendulous accelerometer, including the steps of: providing a first substrate having a top planar surface, etching a portion of the first substrate to a first predetermined depth from the top planar surface to form a plurality of first protrusions, providing a second substrate, etching a portion of the second substrate to a second predetermined depth to form a plurality of second protrusions, bonding planar surfaces of the first protrusions to planar surfaces of the second protrusions, and etching a portion of the first substrate from an opposite side of the first substrate to a third predetermined depth equal to or greater than the difference between the total thickness of the first substrate and the first predetermined depth to form a freely rotatable sensing plate that includes a substantially hollow proof mass.

    Abstract translation: 一种用于制造下摆加速度计的方法,包括以下步骤:提供具有顶部平坦表面的第一基底,将第一基底的一部分从顶部平坦表面蚀刻到第一预定深度以形成多个第一突起,从而提供 第二基板,将第二基板的一部分蚀刻到第二预定深度以形成多个第二突起,将第一突起的平坦表面接合到第二突起的平面表面,以及从相对侧蚀刻第一基板的一部分 的第三预定深度等于或大于第一基板的总厚度与第一预定深度之间的差,以形成包括基本上中空的质量块的可自由旋转的检测板。

    Micro mirror arrays and microstructures with solderable connection sites
    7.
    发明授权
    Micro mirror arrays and microstructures with solderable connection sites 失效
    具有可焊接连接点的微镜阵列和微结构

    公开(公告)号:US07203394B2

    公开(公告)日:2007-04-10

    申请号:US10620119

    申请日:2003-07-15

    CPC classification number: B81C1/0023 B81B2201/042 G02B26/0841

    Abstract: A micro mirror array including an upper wafer portion having a plurality of movable reflective surfaces located thereon, the upper wafer portion defining a coverage area in top view. The array further includes a lower wafer portion located generally below and coupled to the upper wafer portion. The lower wafer portion includes at least one connection site located thereon, the at least one connection site being electrically or operatively coupled to at least one component which can control the movement of at least one of the reflective surfaces. The at least one connection site is not generally located within the coverage area of the upper wafer portion.

    Abstract translation: 一种微镜阵列,包括具有位于其上的多个可移动反射表面的上晶片部分,上晶片部分在顶视图中限定覆盖区域。 该阵列还包括下部晶片部分,该下部晶片部分大致位于上部晶片部分下方并耦合到该上部晶片部分。 下晶片部分包括位于其上的至少一个连接部位,所述至少一个连接部位电连接或可操作地耦合到至少一个可控制至少一个反射表面的部件的部件。 至少一个连接位置通常不位于上晶片部分的覆盖区域内。

    Micro mirror structure with flat reflective coating
    8.
    发明授权
    Micro mirror structure with flat reflective coating 失效
    微镜结构,平面反光涂层

    公开(公告)号:US06778315B2

    公开(公告)日:2004-08-17

    申请号:US10254318

    申请日:2002-09-25

    Abstract: A micro mirror structure including a plurality of individually movable mirrors. Each mirror has a generally concave shape from a top perspective at a temperature of about 20 degrees Celsius and has a generally convex shape from a top perspective at a temperature of about 85 degrees Celsius. In one embodiment, the radius of curvature may be greater than about 500 mm at a temperature of about 20 degrees Celsius and may be less than about −600 mm at a temperature of about 85 degrees Celsius at a thickness of about 10 microns. In another embodiment, the invention is a micro mirror structure including a plurality of individually movable mirrors arranged in an array. Each mirror includes a substrate, a diffusion barrier layer located above the substrate, and a reflective layer located above the diffusion barrier layer. The diffusion barrier layer generally limits the diffusion of the top reflective layer through the diffusion barrier layer.

    Abstract translation: 一种微镜结构,包括多个可单独移动的反射镜。 每个反射镜在大约20摄氏度的温度下具有从顶部透视图的大致凹入的形状,并且在约85摄氏度的温度下从顶部的角度具有大致凸形的形状。 在一个实施例中,在大约20摄氏度的温度下,曲率半径可以大于约500mm,并且在约85摄氏度的温度下可以在约10微米的厚度下小于约-600mm。 在另一个实施例中,本发明是一种微镜结构,其包括以阵列布置的多个单独可移动的反射镜。 每个反射镜包括衬底,位于衬底上方的扩散阻挡层和位于扩散阻挡层上方的反射层。 扩散阻挡层通常限制顶部反射层通过扩散阻挡层的扩散。

    Silicon Micromachined Hemispherical Resonance Gyroscope and Processing Method Thereof
    9.
    发明申请
    Silicon Micromachined Hemispherical Resonance Gyroscope and Processing Method Thereof 审中-公开
    硅微加工半球谐振陀螺仪及其加工方法

    公开(公告)号:US20170038208A1

    公开(公告)日:2017-02-09

    申请号:US14408177

    申请日:2012-08-31

    Applicant: Shuwen Guo

    Inventor: Shuwen Guo

    CPC classification number: G01C19/5691 H01J37/32

    Abstract: The present invention relates to a micromachined hemispherical resonance gyroscope, which comprises a resonant layer, said resonant layer comprising a hemispherical shell which has a concave inner surface and an outer surface opposite to the inner surface, and top point of the hemispherical shell being its anchor point; several silicon hemispherical electrodes being arranged around said hemispherical shell, the silicon hemispherical electrodes including driving electrodes, equilibrium electrodes, signal detection electrodes and shielded electrodes, the shielded electrodes separating the driving electrodes and the equilibrium electrodes from the signal detection electrodes, the hemispherical shell and the several silicon spherical electrodes which surround the hemispherical shell constituting several capacitors; the resonant layer being made of polysilicon or silica or silicon oxide or diamond. The hemispherical resonance micromechanical gyroscope utilizes a processing method on the basis of silicon micromachining, which leads to small size and low production cost, as well as batch production capacity, meanwhile its sensitivity is independent of amplitude and its driving voltage could be very low, as a result its output noise could be significantly reduced, and its accuracy is better than the gyroscope products in the prior art.

    Abstract translation: 微机械半球谐振陀螺仪技术领域本发明涉及一种微加工半球谐振陀螺仪,其包括谐振层,所述谐振层包括半球形外壳,其具有凹内表面和与内表面相对的外表面,半球壳的顶点为其锚 点; 所述半球形壳体周围布置有多个硅半球形电极,所述硅半球形电极包括驱动电极,平衡电极,信号检测电极和屏蔽电极,所述屏蔽电极将驱动电极和平衡电极与信号检测电极,半球壳和 围绕构成若干电容器的半球形壳体的几个硅球形电极; 谐振层由多晶硅或二氧化硅或氧化硅或金刚石制成。 半球谐振微机械陀螺仪采用硅微机械加工的方法,导致体积小,生产成本低,批量生产能力强,灵敏度与振幅无关,驱动电压可能非常低, 结果,其输出噪声可以显着降低,并且其精度优于现有技术中的陀螺仪产品。

    In-plane capacitive mems accelerometer
    10.
    发明授权
    In-plane capacitive mems accelerometer 有权
    平面电容mems加速度计

    公开(公告)号:US08656778B2

    公开(公告)日:2014-02-25

    申请号:US12982720

    申请日:2010-12-30

    CPC classification number: G01P15/125 G01P15/0802 G01P2015/0814

    Abstract: A system for determining in-plane acceleration of an object. The system includes an in-plane accelerometer with a substrate rigidly attached to an object, and a proof mass—formed from a single piece of material—movably positioned a predetermined distance above the substrate. The proof mass includes a plurality of electrode protrusions extending downward from the proof mass to form a gap of varying height between the proof mass and the substrate. The proof mass is configured to move in a direction parallel to the upper surfaces of each of the plurality of substrate electrodes when the object is accelerating, which results in a change in the area of the gap, and a change in capacitance between the substrate and the proof mass. The in-plane accelerometer can be fabricated using the same techniques used to fabricate an out-of-plane accelerometer and is suitable for high-shock applications.

    Abstract translation: 一种用于确定物体的平面内加速度的系统。 该系统包括面内加速度计,其具有刚性地连接到物体的基底,以及由单个材料块质量形成的 - 可移动地定位在基底上方预定距离的检测体。 检测质量包括从检验质量块向下延伸的多个电极突起,以在检验质量块和衬底之间形成不同高度的间隙。 检测质量被配置为当物体加速时在平行于多个基板电极中的每一个的上表面的方向上移动,这导致间隙的面积的变化,以及基板和 证明质量。 平面内加速度计可以使用与制造平面外加速度计相同的技术制造,适用于高冲击应用。

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