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    Microsensor with integrated temperature control
    7.
    发明授权
    Microsensor with integrated temperature control 有权
    具有集成温度控制的微传感器

    公开(公告)号：US09448198B2

    公开(公告)日：2016-09-20

    申请号：US13176599

    申请日：2011-07-05

    申请人： Olivier Le Neel ,  Suman Cherian ,  Ravi Shankar

    发明人： Olivier Le Neel ,  Suman Cherian ,  Ravi Shankar

    IPC分类号： G01K1/00 ,  G01K13/00 ,  G01K17/00 ,  G01N25/00 ,  G01N27/327 ,  G01N33/49

    CPC分类号： G01N27/3272 ,  G01N33/49

    摘要： Microsensors that include an integrated thermal energy source and an integrated temperature sensor are capable of providing localized heating and temperature control of individual sensing regions within the microsensor. Localized temperature control allows analyte detection to be carried out at the same temperatures or substantially the same temperatures at which the sensor is calibrated. By carrying out the sensing near the calibration temperature, more accurate results can be obtained. In addition, the temperature of the sensing region can be controlled so that chemical reactions involving the analyte in the sensing region occur near their peak reaction rate. Carrying out the sensing near the peak reaction rate improves the sensitivity of the sensor which is important as sensor dimensions decrease and the magnitude of the generated signals decreases.

    摘要翻译： 包括集成热能源和集成温度传感器的微型传感器能够提供微传感器内各个感测区域的局部加热和温度控制。 局部温度控制允许分析物检测在相同的温度或基本相同的温度下进行，在此温度下传感器被校准。 通过在校准温度附近进行感测，可以获得更准确的结果。 此外，可以控制感测区域的温度，使得涉及感测区域中的分析物的化学反应在峰值反应速率附近发生。 在峰值反应速率附近进行感测提高了传感器的灵敏度，这在传感器尺寸减小并且产生的信号的幅度减小时是重要的。

    INTEGRATED HEAT PILLAR FOR HOT REGION COOLING IN AN INTEGRATED CIRCUIT
    8.
    发明申请
    INTEGRATED HEAT PILLAR FOR HOT REGION COOLING IN AN INTEGRATED CIRCUIT 有权
    用于集成电路中热区域的集成热支架

    公开(公告)号：US20120153358A1

    公开(公告)日：2012-06-21

    申请号：US12975194

    申请日：2010-12-21

    申请人： Ravi Shankar ,  Olivier Le Neel

    发明人： Ravi Shankar ,  Olivier Le Neel

    IPC分类号： H01L23/367 ,  H01L21/46

    CPC分类号： H01L23/522 ,  H01L23/3677 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The thermal energy transfer techniques of the disclosed embodiments utilize passive thermal energy transfer techniques to reduce undesirable side effects of trapped thermal energy at the circuit level. The trapped thermal energy may be transferred through the circuit with thermally conductive structures or elements that may be produced as part of a standard integrated circuit process. The localized and passive removal of thermal energy achieved at the circuit level rather just at the package level is both more effective and more efficient.

    摘要翻译： 所公开的实施例的热能传递技术利用无源热能传递技术来减少在电路级别被捕获的热能的不期望的副作用。 捕获的热能可以通过具有导热结构或可以作为标准集成电路工艺的一部分产生的元件的电路传输。 在电路级别实现的热能的局部和被动去除，而不仅仅是在封装级别更有效和更有效。

    DEVICE AND METHOD FOR TESTING MAGNETIC SWITCHES AT WAFER-LEVEL STAGE OF MANUFACTURE
    9.
    发明申请
    DEVICE AND METHOD FOR TESTING MAGNETIC SWITCHES AT WAFER-LEVEL STAGE OF MANUFACTURE 有权
    用于在制造水平阶段测试磁性开关的装置和方法

    公开(公告)号：US20110156712A1

    公开(公告)日：2011-06-30

    申请号：US12650257

    申请日：2009-12-30

    申请人： Ravi Shankar ,  Olivier Le Neel

    发明人： Ravi Shankar ,  Olivier Le Neel

    IPC分类号： G01R31/327 ,  G01R33/12

    CPC分类号： G01R1/07378 ,  G01R1/07342 ,  G01R31/31702 ,  G01R31/318511 ,  G01R31/3278

    摘要： A testing mechanism for testing magnetically operated microelectromechanical system (MEMS) switches at a wafer level stage of manufacture includes an electromagnetic fixture configured to be received in a standard probe ring. The electromagnetic fixture is rotatable, relative to the probe ring, to permit adjustment of orientation of a generated magnetic field relative to the MEMS devices of a subject wafer. The testing mechanism also includes a probe card with probes positioned to contact test pads on the subject wafer. During operation, the probe card is positioned over the wafer to be tested, with the test probes in electrical contact with respective contact pads of the wafer, and the electromagnetic fixture is positioned above the probe card. An electrical potential is applied across the switches on the subject wafer, and the electromagnetic fixture is energized at selected levels of power and duration. Current flow across each switch is measured to determine one or more of: open circuit contact resistance, closed circuit contact resistance, response time, response to switching magnetic field, frequency response, current capacity, critical dimensions, critical angles of magnetic field orientation, etc. Wafer level testing enables rejection of non-compliant switches before the cutting and packaging levels of manufacture.

    摘要翻译： 用于在晶片级制造阶段测试磁操作微机电系统（MEMS）开关的测试机构包括被配置为接收在标准探针环中的电磁夹具。 电磁夹具相对于探针环可旋转，以允许相对于目标晶片的MEMS器件调整产生的磁场的取向。 测试机构还包括具有探针的探针卡，所述探针被定位成接触主体晶片上的测试焊盘。 在操作期间，探针卡位于要测试的晶片上，测试探针与晶片的相应接触焊盘电接触，并且电磁夹具位于探针卡上方。 在主体晶片上的开关上施加电势，并且电磁夹具以选定的功率和持续时间被激励。 测量每个开关上的电流，以确定以下一个或多个：开路接触电阻，闭路接触电阻，响应时间，对开关磁场的响应，频率响应，电流容量，临界尺寸，磁场定向的临界角等 晶圆级测试在切割和封装制造水平之前能够拒绝不符合标准的开关。

    Capacitance trimming with an integrated heater
    10.
    发明授权
    Capacitance trimming with an integrated heater 有权
    电容调整与集成加热器

    公开(公告)号：US09019688B2

    公开(公告)日：2015-04-28

    申请号：US13310466

    申请日：2011-12-02

    申请人： Olivier Le Neel ,  Ravi Shankar

    发明人： Olivier Le Neel ,  Ravi Shankar

    IPC分类号： H01G7/04 ,  H01L23/522 ,  H01L49/02 ,  H01L23/34 ,  H01G4/33 ,  H01L27/06

    CPC分类号： H01G7/04 ,  H01G4/33 ,  H01L23/345 ,  H01L23/5223 ,  H01L23/5228 ,  H01L27/0688 ,  H01L28/40 ,  H01L28/55 ,  H01L2924/0002 ,  Y10T29/43 ,  H01L2924/00

    摘要： The present disclosure is directed to a device and a method for achieving a precise capacitance of a capacitor. The method includes trimming a first capacitance of the capacitor to a second capacitance, the capacitor having a first conductive layer separated from a second conductive layer by a dielectric layer. Changing a first dielectric constant of the dielectric layer to a second dielectric constant, where the first dielectric constant corresponding to the first capacitance and the second dielectric constant corresponding to the second dielectric constant includes heating the dielectric layer above a threshold temperature for a time period. The heat is provided by either one of the plates of the capacitor or from a separate heater.

    摘要翻译： 本公开涉及一种用于实现电容器的精确电容的装置和方法。 该方法包括将电容器的第一电容调整为第二电容，该电容器具有通过电介质层与第二导电层分离的第一导电层。 将电介质层的第一介电常数改变到第二介电常数，其中对应于第一电容的第一介电常数和对应于第二介电常数的第二介电常数包括将电介质层加热到阈值温度一段时间。 热量由电容器的任一个板或从单独的加热器提供。