摘要:
The present invention relates to suspensions which have a very low salt content and contain at least one precipitated silica, a process for producing them and also their use.
摘要:
The present invention relates to a liquid-phase process for producing structured silicon- and/or germanium-containing coatings by the application to a substrate of at least one coating composition, the partial activation of the resulting coating on the coated substrate, and oxidation of non-activated coating on the substrate, to the coats produced by the process and to their use.
摘要:
An electrolysis cell for carrying out chemical reactions include an electrolyte chamber (2) with a fixed-bed electrode (2F), a gas chamber (1) filled with filling bodies (1F), a gas diffusion electrode with an ion-exchanging separator (3) applied on the electrolyte-chamber side. The ion-exchanging separator is applied onto the gas diffusion electrode by a method comprising a single or multiple application of a solution of an ion-exchanging material in a solvent onto the electrocatalytically active layer of the gas diffusion electrode and at least partial evaporation of the solvent after each coating. The electrolysis cell may be used for the oxidation and reduction of organic or inorganic components dissolved in the electrolyte.
摘要:
Process for the phase transformation of substances and mixtures of substances, in which the substance or the mixture of substances is introduced into a plasma reactor, the substance or the mixture of substances is converted into the higher-energy phase and the product is removed in gaseous form from the plasma reactor. The process can be used for the sublimation of metal salts, metal nitrates and/or metal alkoxides and other vaporizable metal organic compounds.
摘要:
The invention relates to a process for the production of a peroxodisulfate, such as ammonium-, sodium- and potassium peroxodisulfate by anodic oxidation of an electrolyte containing a sulfate and/or hydrogen sulfate. The disadvantages of the conventional platinum anodes used for this hitherto can be avoided by using as the anode a diamond film mounted on a conductive carrier and made conductive by doping with a tri- or pentavalent element and by not adding a promoter to the anolyte.
摘要:
The present invention relates to storage-stable product systems having high latency and good mechanical stability, which are suitable, inter alia, for premix formulations. Furthermore, the present invention relates to a method for producing the formulations according to the invention and the use thereof.
摘要:
The invention relates to a method for producing a thermoelectric component or at least a semifinished version thereof, in which at least one thermoelectric active material in dry powder form is introduced into at least some of the holes of a perforated template. It addresses the problem of specifying a method which can be conducted in a particularly economically viable manner. The problem is solved by virtue of the active material remaining in the holes of the template, and the template filled with active material becoming a constituent of the thermoelectric component produced.
摘要:
The present invention relates to a method for the hydrogen passivation of semiconductor layers, wherein the passivation is effected by using an arc plasma source, to the passivated semiconductor layers produced according to the method, and to the use thereof.
摘要:
The invention relates to a method for producing a thermoelectric component or at least a semifinished version thereof, in which at least one thermoelectric active material in dry powder form is introduced into at least some of the holes of a perforated template. It addresses the problem of specifying a method which can be conducted in a particularly economically viable manner. The problem is solved by virtue of the active material remaining in the holes of the template, and the template filled with active material becoming a constituent of the thermoelectric component produced.
摘要:
The present invention relates to a process for conversion of semiconductor layers, especially for conversion of amorphous to crystalline silicon layers, in which the conversion is effected by treating the semiconductor layer with a plasma which is generated by a plasma source equipped with a plasma nozzle (1). The present invention further relates to semiconductor layers produced by the process, to electronic and optoelectronic products comprising such semiconductor layers, and to a plasma source for performance of the process according to the invention.