公开(公告)号：US20130240892A1

公开(公告)日：2013-09-19

申请号：US13885316

申请日：2011-11-10

申请人： Patrik Stenner ,  Matthias Patz ,  Michael Coelle ,  Stephan Wieber

发明人： Patrik Stenner ,  Matthias Patz ,  Michael Coelle ,  Stephan Wieber

IPC分类号： H01L21/02 ,  H01L29/04 ,  B23K10/00

CPC分类号： H01L21/02027 ,  B23K10/00 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02689 ,  H01L21/3003 ,  H01L29/04 ,  H01L31/1872 ,  H05H1/32 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention relates to a process for conversion of semiconductor layers, especially for conversion of amorphous to crystalline silicon layers, in which the conversion is effected by treating the semiconductor layer with a plasma which is generated by a plasma source equipped with a plasma nozzle (1). The present invention further relates to semiconductor layers produced by the process, to electronic and optoelectronic products comprising such semiconductor layers, and to a plasma source for performance of the process according to the invention.

摘要翻译： 本发明涉及一种用于转换半导体层的方法，特别是用于转换非晶体到硅层的方法，其中转换是通过用等离子体处理等离子体来实现的，所述等离子体是由装备有等离子体喷嘴的等离子体源 1）。 本发明还涉及通过该方法制造的半导体层，包括这种半导体层的电子和光电子产品，以及用于执行根据本发明的方法的等离子体源。

公开(公告)号：US09865461B2

公开(公告)日：2018-01-09

申请号：US14899435

申请日：2014-06-06

申请人： Christoph Mader ,  Paul Henrich Woebkenberg ,  Joachim Erz ,  Stephan Traut ,  Matthias Patz ,  Michael Coelle ,  Stephan Wieber ,  Patrik Stenner ,  Janette Klatt ,  Odo Wunnicke

发明人： Christoph Mader ,  Paul Henrich Woebkenberg ,  Joachim Erz ,  Stephan Traut ,  Matthias Patz ,  Michael Coelle ,  Stephan Wieber ,  Patrik Stenner ,  Janette Klatt ,  Odo Wunnicke

IPC分类号： C23C18/00 ,  H01L21/02 ,  C23C18/12

CPC分类号： H01L21/02628 ,  C23C18/1204 ,  H01L21/02532

摘要： The present invention relates to a liquid-phase process for producing structured silicon- and/or germanium-containing coatings by the application to a substrate of at least one coating composition, the partial activation of the resulting coating on the coated substrate, and oxidation of non-activated coating on the substrate, to the coats produced by the process and to their use.

公开(公告)号：US20130328175A1

公开(公告)日：2013-12-12

申请号：US13991261

申请日：2011-11-11

申请人： Patrik Stenner ,  Stephan Wieber ,  Michael Cölle ,  Matthias Patz ,  Reinhard Carius ,  Torsten Bronger

发明人： Patrik Stenner ,  Stephan Wieber ,  Michael Cölle ,  Matthias Patz ,  Reinhard Carius ,  Torsten Bronger

IPC分类号： H01L21/30

CPC分类号： H01L21/3003 ,  H01L31/1804 ,  H01L31/1868 ,  H05H1/48 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention relates to a method for the hydrogen passivation of semiconductor layers, wherein the passivation is effected by using an arc plasma source, to the passivated semiconductor layers produced according to the method, and to the use thereof.

摘要翻译： 本发明涉及一种用于半导体层氢钝化的方法，其中通过使用电弧等离子体源对根据该方法生产的钝化半导体层进行钝化及其用途。

公开(公告)号：US20120291665A1

公开(公告)日：2012-11-22

申请号：US13574376

申请日：2011-02-16

申请人： Stephan Wieber ,  Matthias Patz ,  Bernhard Stuetzel ,  Michael Coelle ,  Nicole Brausch ,  Janette Klatt ,  Jutta Hessing

发明人： Stephan Wieber ,  Matthias Patz ,  Bernhard Stuetzel ,  Michael Coelle ,  Nicole Brausch ,  Janette Klatt ,  Jutta Hessing

IPC分类号： C01B33/04 ,  C09D1/00

CPC分类号： C08G77/60 ,  C09D183/16 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02628

摘要： The present invention relates to a method for oligomerizing hydridosilanes, wherein a composition comprising substantially at least one non-cyclic hydridosilane having a maximum of 20 silicon atoms as the hydridosilane is thermally converted at temperatures below 235° C. in the absence of a catalyst, the oligomers that can be produced according to the method, and the use thereof.

摘要翻译： 本发明涉及一种低聚硅烷的方法，其中基本上含有至少一个具有最多20个硅原子的非环状氢硅烷作为氢硅烷的组合物在不存在催化剂的情况下在235℃以下的温度下热转化， 可以根据该方法制备的低聚物及其用途。

公开(公告)号：US09464099B2

公开(公告)日：2016-10-11

申请号：US14435528

申请日：2013-10-31

申请人： Stephan Traut ,  Stephan Wieber ,  Matthias Patz ,  Michael Coelle ,  Harald Stueger ,  Christoph Walkner

发明人： Stephan Traut ,  Stephan Wieber ,  Matthias Patz ,  Michael Coelle ,  Harald Stueger ,  Christoph Walkner

IPC分类号： C07F7/08 ,  C08G77/60 ,  H01L21/02

CPC分类号： C07F7/0803 ,  C07F7/0827 ,  C07F7/0896 ,  C08G77/60 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02628

摘要： The present invention provides processes for preparing carbon-containing hydridosilanes, in which an optionally boron- or phosphorus-doped hydridosilane is reacted without catalyst and reducing agent with at least one carbon source selected from linear, branched or cyclic carbosilanes, halogenated hydrocarbons, carbenes, alkyl azides, diazomethane, dimethyl sulphate or alcohols, the carbon-containing hydridosilane oligomers obtainable by the process and the use thereof.

摘要翻译： 本发明提供了制备含碳氢硅烷的方法，其中任选的硼或磷掺杂的氢硅烷在没有催化剂和还原剂的情况下反应，其中至少一种碳源选自直链，支链或环状碳硅烷，卤代烃，卡宾， 烷基叠氮化物，重氮甲烷，硫酸二甲酯或醇，可通过该方法获得的含碳氢硅烷低聚物及其用途。

公开(公告)号：US08969610B2

公开(公告)日：2015-03-03

申请号：US13574376

申请日：2011-02-16

申请人： Stephan Wieber ,  Matthias Patz ,  Bernhard Stuetzel ,  Michael Coelle ,  Nicole Brausch ,  Janette Klatt ,  Jutta Hessing

发明人： Stephan Wieber ,  Matthias Patz ,  Bernhard Stuetzel ,  Michael Coelle ,  Nicole Brausch ,  Janette Klatt ,  Jutta Hessing

IPC分类号： C07F7/02 ,  C08G77/60 ,  C09D183/16 ,  H01L21/02

CPC分类号： C08G77/60 ,  C09D183/16 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02628

摘要： The present invention relates to a method for oligomerizing hydridosilanes, wherein a composition comprising substantially at least one non-cyclic hydridosilane having a maximum of 20 silicon atoms as the hydridosilane is thermally converted at temperatures below 235° C. in the absence of a catalyst, the oligomers that can be produced according to the method, and the use thereof.

摘要翻译： 本发明涉及一种低聚硅烷的方法，其中基本上含有至少一个具有最多20个硅原子的非环状氢硅烷作为氢硅烷的组合物在不存在催化剂的情况下在235℃以下的温度下热转化， 可以根据该方法制备的低聚物及其用途。

公开(公告)号：US09017630B2

公开(公告)日：2015-04-28

申请号：US13504331

申请日：2010-11-08

申请人： Stephan Wieber ,  Matthias Patz ,  Martin Trocha ,  Hartwig Rauleder ,  Ekkehard Mueh ,  Harald Stueger ,  Christoph Walkner

发明人： Stephan Wieber ,  Matthias Patz ,  Martin Trocha ,  Hartwig Rauleder ,  Ekkehard Mueh ,  Harald Stueger ,  Christoph Walkner

IPC分类号： C01B33/04 ,  C01B33/107

CPC分类号： C01B33/04 ,  C01B33/043 ,  C01B33/10773 ,  Y10T428/31663

摘要： The invention relates to a method for producing hydridosilanes from halosilanes by a) reacting i) at least one halosilane of the generic formula SinX2n+2 (with n≧3 and X═F, Cl, Br and/or I) with ii) at least one catalyst of the generic formula NRR'aR″bYc with a=0 or 1, b=0 or 1, and c=0 or 1, and formula (I), wherein aa) R, R′ and/or R″ are —C1-C12 alkyl, —C1-C12 aryl, —C1-C12 aralkyl, —C1-C12 aminoalkyl, —C1-C12 aminoaryl, —C1-C12 aminoaralkyl, and/or two or three groups R, R′ and R″ (if c=0) together form a cyclic or bicyclic, heteroaliphatic or heteroaromatic system including N, with the proviso that at least one group R, R′ or R″ is unequal —CH3 and/or wherein bb) R and R′ and/or R″' (if c=1) are —C1-C12 alkylene, —C1-C12 arylene, —C1-C12 aralkylene, —C1-C12 heteroalkylene, —C1-C12 heteroarylene, —C1-C12 heteroaralkylene and/or —N═, or cc) (if a=b=c=0) R═≡C-R′″ (with R′″═—C1-C10 alkyl, —C1-C10 aryl and/or —C1-C10 aralkyl), while forming a mixture comprising at least one halosilane of the generic formula SimX2m+2 (with m>n and X═F, Cl, Br and/or I) and SiX4 (with X═F, Cl, Br and/or I), and b) hydrogenating the at least one halosilane of the generic formula SimH2m+2 while forming a hydridosilane of the generic formula SimH2m+2. The invention also relates to the hydridosilanes producible according to said method and to their use.

摘要翻译： 本发明涉及一种由卤代硅烷生产氢硅烷的方法，其通过以下步骤：a）使i）至少一种通式为SinX2n + 2（n≥3，X = F，Cl，Br和/或I）的卤代硅烷与ii） a = 0或1，b = 0或1，c = 0或1和式（I）的通式NRR'aR“bYc的至少一种催化剂，其中aa）R，R'和/或R” 是-C 1 -C 12烷基，-C 1 -C 12芳基，-C 1 -C 12芳烷基，-C 1 -C 12氨基烷基，-C 1 -C 12氨基芳基，-C 1 -C 12氨基烷基和/或两个或三个基团R，R'和R “（如果c = 0）一起形成包括N的环状或双环，杂脂族或杂芳族体系，条件是至少一个基团R，R'或R”不等于-CH 3和/或其中bb）R和R' 和/或R“'（如果c = 1）是-C 1 -C 12亚烷基，-C 1 -C 12亚芳基，-C 1 -C 12亚芳基，-C 1 -C 12杂亚烷基，-C 1 -C 12亚杂芳基，-C 1 -C 12杂亚烷基和/ 或-N =或cc）（如果a = b = c = 0）R≡≡CR'“（其中R'”= C 1 -C 10烷基，-C 1 -C 10芳基和/或-C 1 -C 10芳烷基），同时形成包含通式SimX2m + 2（具有m> n和X = F，Cl，Br和/或I）的至少一种卤代硅烷和SiX 4（具有X = F，Cl，Br和 /或I），和b）在形成通式SimH 2 m + 2的氢硅烷的同时使通式SimH 2 m + 2的至少一种卤代硅烷氢化。 本发明还涉及根据所述方法可生产的氢硅石及其用途。

公开(公告)号：US20120214005A1

公开(公告)日：2012-08-23

申请号：US13504331

申请日：2010-11-08

申请人： Stephan Wieber ,  Matthias Patz ,  Martin Trocha ,  Hartwig Rauleder ,  Ekkehard Mueh ,  Harald Stueger ,  Christoph Walkner

发明人： Stephan Wieber ,  Matthias Patz ,  Martin Trocha ,  Hartwig Rauleder ,  Ekkehard Mueh ,  Harald Stueger ,  Christoph Walkner

IPC分类号： B32B9/04 ,  C01B33/04

CPC分类号： C01B33/04 ,  C01B33/043 ,  C01B33/10773 ,  Y10T428/31663

摘要： The invention relates to a method for producing hydridosilanes from halosilanes by a) reacting i) at least one halosilane of the generic formula SinX2n+2 (with n≧3 and X═F, Cl, Br and/or I) with ii) at least one catalyst of the generic formula NRR'aR″bYc with a=0 or 1, b=0 or 1, and c=0 or 1, and formula (I), wherein aa) R, R′ and/or R″ are —C1-C12 alkyl, —C1-C12 aryl, —C1-C12 aralkyl, —C1-C12 aminoalkyl, —C1-C12 aminoaryl, —C1-C12 aminoaralkyl, and/or two or three groups R, R′ and R″ (if c=0) together form a cyclic or bicyclic, heteroaliphatic or heteroaromatic system including N, with the proviso that at least one group R, R′ or R″ is unequal —CH3 and/or wherein bb) R and R′ and/or R″' (if c=1) are —C1-C12 alkylene, —C1-C12 arylene, —C1-C12 aralkylene, —C1-C12 heteroalkylene, —C1-C12 heteroarylene, —C1-C12 heteroaralkylene and/or —N═, or cc) (if a=b=c=0) R═≡C-R′″ (with R′″═—C1-C10 alkyl, —C1-C10 aryl and/or —C1-C10 aralkyl), while forming a mixture comprising at least one halosilane of the generic formula SimX2m+2 (with m>n and X═F, Cl, Br and/or I) and SiX4 (with X═F, Cl, Br and/or I), and b) hydrogenating the at least one halosilane of the generic formula SimH2m+2 while forming a hydridosilane of the generic formula SimH2m+2. The invention also relates to the hydridosilanes producible according to said method and to their use

摘要翻译： 本发明涉及一种由卤代硅烷生产氢硅烷的方法，其通过以下步骤：a）使i）至少一种通式为SinX2n + 2（n≥3，X = F，Cl，Br和/或I）的卤代硅烷与ii） a = 0或1，b = 0或1，c = 0或1和式（I）的通式NRR'aR“bYc的至少一种催化剂，其中aa）R，R'和/或R” 是-C 1 -C 12烷基，-C 1 -C 12芳基，-C 1 -C 12芳烷基，-C 1 -C 12氨基烷基，-C 1 -C 12氨基芳基，-C 1 -C 12氨基烷基和/或两个或三个基团R，R'和R “（如果c = 0）一起形成包括N的环状或双环，杂脂族或杂芳族体系，条件是至少一个基团R，R'或R”不等于-CH 3和/或其中bb）R和R' 和/或R“'（如果c = 1）是-C 1 -C 12亚烷基，-C 1 -C 12亚芳基，-C 1 -C 12亚芳基，-C 1 -C 12杂亚烷基，-C 1 -C 12亚杂芳基，-C 1 -C 12杂亚烷基和/ 或-N =或cc）（如果a = b = c = 0）R≡≡CR'“（其中R'”= C 1 -C 10烷基，-C 1 -C 10芳基和/或-C 1 -C 10芳烷基），同时形成包含通式SimX2m + 2（具有m> n和X = F，Cl，Br和/或I）的至少一种卤代硅烷和SiX 4（具有X = F，Cl，Br和 /或I），和b）在形成通式SimH 2 m + 2的氢硅烷的同时使通式SimH 2 m + 2的至少一种卤代硅烷氢化。 本发明还涉及根据所述方法可生产的氢硅石及其用途

公开(公告)号：US20130259790A1

公开(公告)日：2013-10-03

申请号：US13989823

申请日：2011-12-02

申请人： Stephan Wieber ,  Matthias Patz ,  Harald Stuger ,  Christoph Walkner

发明人： Stephan Wieber ,  Matthias Patz ,  Harald Stuger ,  Christoph Walkner

IPC分类号： C01B33/107 ,  C01B33/021 ,  C01B33/04

CPC分类号： C01B33/10773 ,  B01J31/0267 ,  C01B33/021 ,  C01B33/04

摘要： The invention relates to a process for preparing higher halosilanes by disproportionation of lower halosilanes. The invention further relates to a process for preparing higher hydridosilanes from the higher halosilanes prepared by disproportionation. The invention further relates to mixtures containing at least one higher halosilane or at least one higher hydridosilane prepared by the process described. Finally, the invention relates to the use of such a mixture containing at least one higher hydridosilane for producing electronic or optoelectronic component layers or for producing silicon-containing layers.

摘要翻译： 本发明涉及通过下列卤代硅烷歧化制备高级卤代硅烷的方法。 本发明还涉及由歧化制备的较高卤代硅烷制备较高级的硅烷的方法。 本发明还涉及含有至少一种较高卤代硅烷或至少一种通过所述方法制备的较高氢硅烷的混合物。 最后，本发明涉及使用含有至少一种较高氢硅烷的混合物来生产电子或光电子组件层或用于生产含硅层。

公开(公告)号：US20130183223A1

公开(公告)日：2013-07-18

申请号：US13824641

申请日：2011-09-27

申请人： Stephan Wieber ,  Matthias Patz ,  Jutta Hessing ,  Janette Klatt

发明人： Stephan Wieber ,  Matthias Patz ,  Jutta Hessing ,  Janette Klatt

IPC分类号： C01B33/04

CPC分类号： C01B33/04 ,  C08G77/12 ,  C08G77/60 ,  C23C18/122

摘要： The present invention relates to a rapid and metal-free process for preparing high order hydridosilane compounds from low order hydridosilane compounds, wherein at least one low order hydridosilane compound (I) is thermally reacted in the presence of at least one hydridosilane compound (II) having a weight average molecular weight of at least 500 g/mol, to the hydridosilane compounds obtainable by the process and to their use.

摘要翻译： 本发明涉及由低级氢硅烷化合物制备高级氢硅烷化合物的快速和无金属的方法，其中至少一种低级氢硅烷化合物（I）在至少一种氢化硅烷化合物（II）存在下进行热反应， 对于通过该方法获得的氢硅烷化合物及其用途，具有至少500g / mol的重均分子量。