摘要:
A coatable resin solution capable of forming a coating when applied to the surface of a substrate that is photo-patternable and developable as a dielectric material upon exposure to ultraviolet radiation is provided. The resin solution comprises a silsequioxane-based (SSQ-based) resin, at least one initiator, and an organic solvent. The SSQ-based resin includes both a hydride component and at least one photo-curable component. The resulting coating exhibits a dielectric constant that is less than or equal to about 3.5.
摘要:
A coatable resin solution capable of forming a coating when applied to the surface of a substrate that is photo-patternable and developable as a dielectric material upon exposure to ultraviolet radiation is provided. The resin solution comprises a silsequioxane-based (SSQ-based) resin, at least one initiator, and an organic solvent. The SSQ-based resin includes both a hydride component and at least one photo-curable component. The resulting coating exhibits a dielectric constant that is less than or equal to about 3.5.
摘要:
An antireflective coating compositions comprising (I) a silsesquioxane resin (II) a compound selected from photo-acid generators and thermal acid generators; and (III) a solvent wherein in the silsesquioxane resin contains a carboxylic acid forming group or a sulfuric acid forming group.
摘要:
An antireflective coating compositions comprising (I) a silsesquioxane resin (II) a compound selected from photo-acid generators and thermal acid generators; and (III) a solvent wherein in the silsesquioxane resin contains a carboxylic acid forming group or a sulfuric acid forming group.
摘要:
A system and method of minimizing the amount of power that is used by an optoelectronic module is disclosed. The system uses a thermoelectric cooler (TEC) to maintain a case temperature of the module at about 50° C. This allows the TEC to operate in the much more efficient heating mode, thus minimizing the amount of current being used to maintain the module temperature. The method includes the steps of determining a temperature range and operating temperature for an optoelectronic module, such that a maximum current level is not exceeded. In one exemplary embodiment, an operating temperature of about 50° C. with a temperature range of from about −5° C. to about 75° C. allows a maximum current of about 300 mA.
摘要:
A method of forming an antireflective coating on an electronic device comprising (A) applying to an electronic device an ARC composition comprising (i) a silsesquioxane resin having the formula (PhSiO(3-x)/2(OH)x)m HSiO(3-x)/2(OH)x)n(MeSiO(3-x)/2(OH)x)p where Ph is a phenyl group, Me is a methyl group, x has a value of 0, 1 or 2; m has a value of 0.05 to 0.95, n has a value of 0.05 to 0.95, p has a value of 0.05 to 0.95, and m+n+p≈1; and (ii) a solvent; and (B) removing the solvent and curing the silsesquioxane resin to form an antireflective coating on the electronic device.
摘要:
There is disclosed a method for synthesizing polyolefins having a silyl group at one terminus, said method comprising reacting(A) a monomer selected from the group consisting of ethylene and a combination of ethylene and an .alpha.-olefin; and(B) a silane having the formulaR.sup.2 R.sup.3 R.sup.4 SiH wherein R.sup.2, R.sup.3 and R.sup.4 each represents a monovalent group selected from the group consisting of hydrogen, alkyl having 1 to 4 carbon atoms, aryl, alkylaryl, arylalkyl, alkoxy having 1-4 carbon atoms, phenoxy, fluorinated alkyl having 3 to 6 carbon atoms, a dialkylamino group in which the alkyl groups contain 1 to 4 carbon atoms and a diorganopolysiloxane chain containing 1 to 10 siloxane units, said reaction taking place in the presence of(C) a catalyst comprising a metallocene compound.
摘要翻译:公开了一端合成具有甲硅烷基的聚烯烃的方法,所述方法包括使(A)选自乙烯和乙烯与α-烯烃的组合的单体反应; 和(B)具有式R 2 R 3 R 4 SiH的硅烷,其中R 2,R 3和R 4各自表示选自氢,具有1至4个碳原子的烷基,芳基,烷基芳基,芳基烷基,具有1-4个碳原子的烷氧基的一价基团, 苯氧基,具有3至6个碳原子的氟化烷基,其中烷基含有1至4个碳原子的二烷基氨基和含有1至10个硅氧烷单元的二有机聚硅氧烷链,所述反应在(C)催化剂存在下进行,所述催化剂包含 茂金属化合物。
摘要:
A silsesquioxane resin is applied over the patterned photo-resist and cured at the pattern surface to produce a cured silsesquioxane resin on the pattern surface. The uncured silsesquioxane resin layer is then removed leaving the cured silsesquioxane resin on the pattern surface. The cured silsesquioxane resin on horizontal surfaces is removed to expose the underlying photo-resist. This photo-resist is removed leaving a pattern of cured silsesquioxane. Optionally, the new pattern can be transferred into the underlying layer(s).
摘要:
Antireflective coatings produced from silsesquioxane resin comprises the units (Ph(CH2)rSiO(3-x)/2(OR′)x)m (HSiO(3-x)/2(OR′)x)n (MeSiO(3-x)/2(OR′)x)o (RSiO(3-x)/2(OR′)x)p (R1SiO(3-x)/2(OR′)x)q where Ph is a phenyl group, Me is a methyl group; R′ is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from a carboxylic acid group or a carboxylic acid forming group with the proviso that there is a sufficient amount of carboxylic acid groups to make the resin wet etchable after cure; and R1 is selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, sulfur-containing organic functional groups, hydroxyl producing group, aryl sulphonic ester groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0.90; n has a value of 0.05 to 0.99; o has a value of 0 to 0.95; p has a value of 0.01 to 0.5; q has a value of 0 to 0.5; and m+n+o+p+q≈1.
摘要翻译:由倍半硅氧烷树脂制备的抗反射涂层包括单元(Ph(CH2)rSiO(3-x)/ 2(OR')x)m(HSiO(3-x)/ 2(OR')x)n(MeSiO x)/ 2(OR')x)o(RSiO(3-x)/ 2(OR')x)p(R1SiO(3-x)/ 2(OR')x)q其中Ph是苯基, 我是甲基; R'是氢原子或具有1至4个碳原子的烃基; R选自羧酸基团或羧酸形成基团,条件是存在足够量的羧酸基团以使树脂在固化后可湿法蚀刻; 并且R 1选自取代的苯基,酯基,聚醚基团; 巯基,含硫有机官能团,羟基产生基团,芳基磺酸酯基团和反应性或可固化的有机官能团; 并且r的值为0,1,2,3或4; x的值为0,1或2; 其中在树脂中m为0至0.90; n的值为0.05〜0.99; o的值为0〜0.95; p的值为0.01〜0.5; q的值为0〜0.5; 和m + n + o + p +q≈1。
摘要:
This invention pertains to silsesquioxane resins useful in antireflective coatings wherein the silsesquioxane resin comprises the units (Ph(CH2)rSiO(3-x)/2(OR′)x)m(HSiO(3-x)/2(OR′)x)n (MeSiO(3-x)/2(OR′)x)c, (RSiO(3-x)/2(OR′)x)p (R1SiO(3-x)/2(OR′)x)q where Ph is a phenyl group, Me is a methyl group; R′ is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from a carboxylic acid group, a carboxylic acid forming group, and mixtures thereof; and R1 is selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, sulfur-containing organic functional groups, hydroxyl producing group, aryl sulphonic ester groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0.90; n has a value of 0.05 to 0.99; o has a value of 0 to 0.95; p has a value of 0.01 to 0.5; q has a value of 0 to 0.5; and m+n+o+p+q≈1.