公开(公告)号：US09086626B2

公开(公告)日：2015-07-21

申请号：US14007671

申请日：2012-03-28

申请人： Peng-Fei Fu ,  Eric S. Moyer ,  Jason Suhr

发明人： Peng-Fei Fu ,  Eric S. Moyer ,  Jason Suhr

IPC分类号： G03F7/075

CPC分类号： G03F7/0757

摘要： A coatable resin solution capable of forming a coating when applied to the surface of a substrate that is photo-patternable and developable as a dielectric material upon exposure to ultraviolet radiation is provided. The resin solution comprises a silsequioxane-based (SSQ-based) resin, at least one initiator, and an organic solvent. The SSQ-based resin includes both a hydride component and at least one photo-curable component. The resulting coating exhibits a dielectric constant that is less than or equal to about 3.5.

摘要翻译： 提供了一种可涂覆的树脂溶液，当涂布在基材的表面上时，其可以在曝光于紫外线照射下作为电介质材料可光刻图形显影。 树脂溶液包含基于硅氧烷的（SSQ）树脂，至少一种引发剂和有机溶剂。 SSQ型树脂包括氢化物组分和至少一种可光固化组分。 所得涂层的介电常数小于或等于约3.5。

公开(公告)号：US20140023970A1

公开(公告)日：2014-01-23

申请号：US14007671

申请日：2012-03-28

申请人： Peng-Fei Fu ,  Eric S. Moyer ,  Jason Suhr

发明人： Peng-Fei Fu ,  Eric S. Moyer ,  Jason Suhr

IPC分类号： G03F7/075

CPC分类号： G03F7/0757

摘要： A coatable resin solution capable of forming a coating when applied to the surface of a substrate that is photo-patternable and developable as a dielectric material upon exposure to ultraviolet radiation is provided. The resin solution comprises a silsequioxane-based (SSQ-based) resin, at least one initiator, and an organic solvent. The SSQ-based resin includes both a hydride component and at least one photo-curable component. The resulting coating exhibits a dielectric constant that is less than or equal to about 3.5.

摘要翻译： 提供了一种可涂覆的树脂溶液，当涂布在基材的表面上时，其可以在曝光于紫外线照射下作为电介质材料可光刻图形显影。 树脂溶液包含基于硅氧烷的（SSQ）树脂，至少一种引发剂和有机溶剂。 SSQ型树脂包括氢化物组分和至少一种可光固化组分。 所得涂层的介电常数小于或等于约3.5。

公开(公告)号：US5464925A

公开(公告)日：1995-11-07

申请号：US248906

申请日：1994-05-25

申请人： Eric S. Moyer ,  Denise J. D. Moyer

发明人： Eric S. Moyer ,  Denise J. D. Moyer

IPC分类号： C07D209/48 ,  C08G73/10

CPC分类号： C07D209/48 ,  C08G73/101

摘要： The present invention is an oligomer represented by the formula: ##STR1## wherein X is a moiety selected from the group consisting of: ##STR2## where each Y is independently S, O, CH.sub.2, C.dbd.O, CH.sub.3 --C--CH.sub.3, O.dbd.S.dbd.O, or CF.sub.3 --C--CF.sub.3.In another aspect, the present invention is a polymer of the above-described oligomer.

摘要翻译： 本发明是由下式表示的低聚物：其中X是选自下组的部分：其中每个Y独立地为S， O，CH2，C = O，CH3-C-CH3，O = S = O或CF3-C-CF3。 另一方面，本发明是上述低聚物的聚合物。

公开(公告)号：US20140051804A1

公开(公告)日：2014-02-20

申请号：US14003497

申请日：2012-03-08

申请人： Xiaobing Zhou ,  Eric S. Moyer

发明人： Xiaobing Zhou ,  Eric S. Moyer

IPC分类号： C09D5/00

CPC分类号： C09D5/006 ,  C08G77/48 ,  C09D183/14

摘要： Polysilanesiloxane copolymers or resins and method of making are provided. The present disclosure further provides a method of applying the polysilanesiloxane copolymers onto a substrate to form a polysilanesiloxane film for use in photolithography (193 nm). The polysilanesiloxane films meet the basic performance criteria expected or desired for use in an antireflection coating (ARC) application,

摘要翻译： 提供聚硅氧烷共聚物或树脂及其制备方法。 本公开进一步提供了一种将聚硅烷硅氧烷共聚物施加到基材上以形成用于光刻（193nm）的聚硅烷硅氧烷膜的方法。 聚硅烷硅氧烷膜符合预防或期望用于抗反射涂层（ARC）应用的基本性能标准，

公开(公告)号：US06727038B1

公开(公告)日：2004-04-27

申请号：US09910130

申请日：2001-07-20

申请人： Ying Hung So ,  Cheryl L. Murlick ,  Daniel M. Scheck ,  Gregory S. Becker ,  Eric S. Moyer

发明人： Ying Hung So ,  Cheryl L. Murlick ,  Daniel M. Scheck ,  Gregory S. Becker ,  Eric S. Moyer

IPC分类号： G03C176

CPC分类号： G03F7/008 ,  G03F7/0755 ,  Y10S430/12 ,  Y10S430/124

摘要： A photodefineable mixture comprising oligomeric divinyltetramethyldisiloxane bisbenzocyclobutene as its major resin component dissolved in mesitylene and at least 2,6-bis(4-azidobenzylidene)-4-ethylcyclohexanone as a photosensitive agent in an amount sufficient to convert the mixture to an organic-insoluble solid upon exposing the mixture to photon radiation is disclosed. These polymer compositions are useful as thin film dielectrics in electronic applications such as multichip modules, integrated circuits and printed circuit boards.

摘要翻译： 一种光可定义的混合物，其包含低聚二乙烯基四甲基二硅氧烷双苯并环丁烯作为其主要的树脂组分溶解在均三甲苯中，至少2,6-双（4-叠氮基亚苄基）-4-乙基环己酮作为感光剂，其用量足以将混合物转化为有机不溶性固体 公开了将混合物暴露于光子辐射时。 这些聚合物组合物可用作诸如多芯片模块，集成电路和印刷电路板的电子应用中的薄膜电介质。

公开(公告)号：US06083661A

公开(公告)日：2000-07-04

申请号：US290197

申请日：1994-08-15

申请人： Frank L. Oaks ,  Eric S. Moyer ,  Edward W. Rutter, Jr. ,  Robert F. Harris

发明人： Frank L. Oaks ,  Eric S. Moyer ,  Edward W. Rutter, Jr. ,  Robert F. Harris

IPC分类号： G03F7/008 ,  C07C247/16 ,  C07F7/08 ,  C08F2/46 ,  C08F30/08 ,  C08G61/00 ,  C08G61/06 ,  C08G61/08 ,  C08L65/00 ,  G03F7/027 ,  G03F7/075 ,  G03C1/13

CPC分类号： C07F7/0849 ,  C07C247/16 ,  C08G61/00 ,  G03F7/027 ,  G03F7/0757 ,  C07C2101/14

摘要： Photodefineable cyclobutarene compositions are disclosed. These polymer compositions are useful in composites, laminates, membranes, films, adhesives, coatings, and electronic applications such as multichip modules and printed circuit boards. An example of such photodefineable cyclobutarene compositions is a mixture of a photosensitive agent such as 2,6-bis(4-azidobenzylidene)-4-methylcyclohexanone and a cyclobutarene such as oligomeric divinyltetramethyldisiloxane bisbenzocyclobutane.

摘要翻译： 公开了可定义的环丁烷组合物。 这些聚合物组合物可用于复合材料，层压材料，膜，膜，粘合剂，涂料和电子应用如多芯片模块和印刷电路板。 这种光可定义的环丁烷组合物的实例是感光剂如2,6-双（4-叠氮亚苄基）-4-甲基环己酮和环丁烷如低聚二乙烯基四甲基二硅氧烷双苯并环丁烷的混合物。

公开(公告)号：US09029269B2

公开(公告)日：2015-05-12

申请号：US14001298

申请日：2012-02-24

申请人： Michael Bourbina ,  Jeffrey N. Bremmer ,  Eric S. Moyer ,  Sheng Wang ,  Craig R. Yeakle

发明人： Michael Bourbina ,  Jeffrey N. Bremmer ,  Eric S. Moyer ,  Sheng Wang ,  Craig R. Yeakle

IPC分类号： H01L21/683 ,  B32B7/12 ,  B32B33/00 ,  H01L21/304

CPC分类号： B32B7/12 ,  B32B33/00 ,  H01L21/304 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68381 ,  Y10T428/1476 ,  Y10T428/2839 ,  Y10T428/31663

摘要： A method of treating the surface of a semiconductor wafer through the formation of a bonding system is provided in order to enhance the handling of the wafer during subsequent processing operations. The method generally comprises the steps of applying a release layer and an adhesive to different wafers; bonding the wafers together to form a bonded wafer system; performing at least one wafer processing operation (e.g., wafer grinding, etc.) to form a thin processed wafer; debonding the wafers; and then cleaning the surface of the processed wafer with an organic solvent that is capable of dissolving the release layer or any residue thereof. The adhesive includes a vinyl-functionalized polysiloxane oligomeric resin, a Si—H functional polysiloxane oligomeric resin, a catalyst, and optionally an inhibitor, while the release layer is comprised of either a silsesquioxane-based resin or a thermoplastic resin.

摘要翻译： 提供了通过形成接合系统来处理半导体晶片的表面的方法，以便在随后的处理操作期间增强晶片的处理。 该方法通常包括将剥离层和粘合剂施加到不同晶片的步骤; 将晶片接合在一起以形成接合晶片系统; 执行至少一个晶片处理操作（例如，晶片研磨等）以形成薄的加工晶片; 剥离晶片; 然后用能够溶解脱模层的有机溶剂或其任何残余物清洗加工晶片的表面。 粘合剂包括乙烯基官能化聚硅氧烷低聚树脂，Si-H官能聚硅氧烷低聚树脂，催化剂和任选的抑制剂，而脱模层由倍半硅氧烷基树脂或热塑性树脂构成。

公开(公告)号：US20140057450A1

公开(公告)日：2014-02-27

申请号：US14001298

申请日：2012-02-24

申请人： Michael Bourbina ,  Jeffrey N. Bremmer ,  Eric S. Moyer ,  Sheng Wang ,  Craig R. Yeakle

发明人： Michael Bourbina ,  Jeffrey N. Bremmer ,  Eric S. Moyer ,  Sheng Wang ,  Craig R. Yeakle

IPC分类号： H01L21/683 ,  B32B7/12 ,  B32B33/00 ,  H01L21/304

CPC分类号： B32B7/12 ,  B32B33/00 ,  H01L21/304 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68381 ,  Y10T428/1476 ,  Y10T428/2839 ,  Y10T428/31663

摘要： A method of treating the surface of a semiconductor wafer through the formation of a bonding system is provided in order to enhance the handling of the wafer during subsequent processing operations. The method generally comprises the steps of applying a release layer and an adhesive to different wafers; bonding the wafers together to form a bonded wafer system; performing at least one wafer processing operation (e.g., wafer grinding, etc.) to form a thin processed wafer; debonding the wafers; and then cleaning the surface of the processed wafer with an organic solvent that is capable of dissolving the release layer or any residue thereof. The adhesive includes a vinyl-functionalized polysiloxane oligomeric resin, a Si—H functional polysiloxane oligomeric resin, a catalyst, and optionally an inhibitor, while the release layer is comprised of either a silsesquioxane-based resin or a thermoplastic resin.

摘要翻译： 提供了通过形成接合系统来处理半导体晶片的表面的方法，以便在随后的处理操作期间增强晶片的处理。 该方法通常包括将剥离层和粘合剂施加到不同晶片的步骤; 将晶片接合在一起以形成接合晶片系统; 执行至少一个晶片处理操作（例如，晶片研磨等）以形成薄的加工晶片; 剥离晶片; 然后用能够溶解脱模层的有机溶剂或其任何残余物清洗加工晶片的表面。 粘合剂包括乙烯基官能化聚硅氧烷低聚树脂，Si-H官能聚硅氧烷低聚树脂，催化剂和任选的抑制剂，而脱模层由倍半硅氧烷基树脂或热塑性树脂构成。

公开(公告)号：US07368173B2

公开(公告)日：2008-05-06

申请号：US10552432

申请日：2004-05-20

申请人： Bianxiao Zhong ,  Eric S. Moyer

发明人： Bianxiao Zhong ,  Eric S. Moyer

IPC分类号： C08G77/12

CPC分类号： C08G77/38 ,  C08G77/16 ,  C08G77/18 ,  C08G77/70 ,  C08L83/04 ,  C09D183/04 ,  Y10T428/31663

摘要： Herein we disclose a composition, comprising a siloxane resin having the formula (HSiO3/2)a. (SiO4/2)b(HSiX3/2)c(SiX4/2)d, wherein each X is independently —O—, —OH, or —O—(CH2)m—Zn, wherein each m is independently an integer from 1 to about 5, Z is an 5 aromatic moiety, and each n is independently an integer from 1 to about 6; 0

摘要翻译： 在本文中，我们公开了一种组合物，其包含具有式（HSiO 3/2/2）a的硅氧烷树脂。 （SiO 2/2/2）b（Si x S 2/2）（Si x S 2/2） 其中每个X独立地是-O - ， - OH或-O-（CH 2 - ） - Z n，其中每个m独立地为1至约5的整数，Z为5个芳族部分，并且每个n独立地为1至约6的整数; 0

公开(公告)号：US06558755B2

公开(公告)日：2003-05-06

申请号：US09681332

申请日：2001-03-19

申请人： Ivan L. Berry, III ,  Todd Bridgewater ,  Wei Chen ,  Qingyuan Han ,  Eric S. Moyer ,  Michael J. Spaulding ,  Carlo Waldfried

发明人： Ivan L. Berry, III ,  Todd Bridgewater ,  Wei Chen ,  Qingyuan Han ,  Eric S. Moyer ,  Michael J. Spaulding ,  Carlo Waldfried

IPC分类号： C08J718

CPC分类号： H01L21/02134 ,  C01B33/126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3122 ,  H01L21/31695

摘要： Low dielectric constant films with improved elastic modulus. The method of making such coatings involves providing a porous network coating produced from a resin containing at least 2 Si—H groups and plasma curing the coating to convert the coating into porous silica. Plasma curing of the network coating yields a coating with improved modulus, but with a higher dielectric constant. The costing is plasma cured for between about 15 and about 120 seconds at a temperature less than or about 350° C. The plasma cured coating can optionally be annealed. Rapid thermal processing (RTP) of the plasma cured coating reduces the dielectric constant of the coating while maintaining an improved elastic modulus as compared to the plasma cured porous network coating. The annealing temperature is typically loss than or about 475° C., and the annealing time is typically no more than or about 180 seconds. The annealed, plasma cured coating has a dielectric constant in the range of from about 1.1 to about 2.4 and an improved elastic modulus.

摘要翻译： 具有改善的弹性模量的低介电常数膜。 制备这种涂层的方法包括提供由含有至少2个Si-H基团的树脂产生的多孔网络涂层和等离子体固化涂层以将涂层转化为多孔二氧化硅。 网络涂层的等离子体固化产生具有改进模量但具有较高介电常数的涂层。 成本计算在小于或约350℃的温度下等离子体固化约15至约120秒。等离子体固化涂层可任选地退火。 与等离子体固化的多孔网络涂层相比，等离子体固化涂层的快速热处理（RTP）降低了涂层的介电常数，同时保持了改进的弹性模量。 退火温度通常为或约475℃以下，退火时间通常不超过或约180秒。 退火的等离子体固化涂层的介电常数范围为约1.1至约2.4，并具有改善的弹性模量。