公开(公告)号：US08728335B2

公开(公告)日：2014-05-20

申请号：US13386510

申请日：2010-06-22

申请人： Peng-Fei Fu ,  Eric Scott Moyer ,  Jason D. Suhr

发明人： Peng-Fei Fu ,  Eric Scott Moyer ,  Jason D. Suhr

IPC分类号： B44C1/22

CPC分类号： H01L21/3122 ,  C08G77/12 ,  C08G77/14 ,  C09D183/06 ,  G03F7/405 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/0337

摘要： A silsesquioxane resin is applied over the patterned photo-resist and cured at the pattern surface to produce a cured silsesquioxane resin on the pattern surface. The uncured silsesquioxane resin layer is then removed leaving the cured silsesquioxane resin on the pattern surface. The cured silsesquioxane resin on horizontal surfaces is removed to expose the underlying photo-resist. This photo-resist is removed leaving a pattern of cured silsesquioxane. Optionally, the new pattern can be transferred into the underlying layer(s).

摘要翻译： 在图案化的光刻胶上施加倍半硅氧烷树脂并在图案表面固化，以在图案表面上产生固化的倍半硅氧烷树脂。 然后除去未固化的倍半硅氧烷树脂层，留下固化的倍半硅氧烷树脂在图案表面上。 去除水平表面上固化的倍半硅氧烷树脂以暴露下面的光致抗蚀剂。 去除该光刻胶，留下固化的倍半硅氧烷的图案。 可选地，新图案可以被转移到下层中。

公开(公告)号：US20120118856A1

公开(公告)日：2012-05-17

申请号：US13386510

申请日：2010-06-22

申请人： Peng-Fei Fu ,  Eric Scott Moyer ,  Jason D. Suhr

发明人： Peng-Fei Fu ,  Eric Scott Moyer ,  Jason D. Suhr

IPC分类号： B29C67/00

CPC分类号： H01L21/3122 ,  C08G77/12 ,  C08G77/14 ,  C09D183/06 ,  G03F7/405 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/0337

摘要： A silsesquioxane resin is applied over the patterned photo-resist and cured at the pattern surface to produce a cured silsesquioxane resin on the pattern surface. The uncured silsesquioxane resin layer is then removed leaving the cured silsesquioxane resin on the pattern surface. The cured silsesquioxane resin on horizontal surfaces is removed to expose the underlying photo-resist. This photo-resist is removed leaving a pattern of cured silsesquioxane. Optionally, the new pattern can be transferred into the underlying layer(s).

摘要翻译： 在图案化的光刻胶上施加倍半硅氧烷树脂并在图案表面固化，以在图案表面上产生固化的倍半硅氧烷树脂。 然后除去未固化的倍半硅氧烷树脂层，留下固化的倍半硅氧烷树脂在图案表面上。 去除水平表面上固化的倍半硅氧烷树脂以暴露下面的光致抗蚀剂。 去除该光刻胶，留下固化的倍半硅氧烷的图案。 可选地，新图案可以被转移到下层中。

公开(公告)号：US20080273561A1

公开(公告)日：2008-11-06

申请号：US11666813

申请日：2005-02-22

申请人： Peng-Fei Fu ,  Eric Scott Moyer ,  Craig Rollin Yeakle

发明人： Peng-Fei Fu ,  Eric Scott Moyer ,  Craig Rollin Yeakle

IPC分类号： H01S3/04

CPC分类号： H01S5/02415 ,  C09D183/04 ,  G03F7/0757 ,  G03F7/091 ,  H01S5/0612

摘要： A system and method of minimizing the amount of power that is used by an optoelectronic module is disclosed. The system uses a thermoelectric cooler (TEC) to maintain a case temperature of the module at about 50° C. This allows the TEC to operate in the much more efficient heating mode, thus minimizing the amount of current being used to maintain the module temperature. The method includes the steps of determining a temperature range and operating temperature for an optoelectronic module, such that a maximum current level is not exceeded. In one exemplary embodiment, an operating temperature of about 50° C. with a temperature range of from about −5° C. to about 75° C. allows a maximum current of about 300 mA.

摘要翻译： 公开了一种使由光电子模块使用的功率最小化的系统和方法。 该系统使用热电冷却器（TEC）将模块的外壳温度保持在约50°C。这允许TEC以更有效的加热模式运行，从而最小化用于维持模块温度的电流量 。 该方法包括确定光电子模块的温度范围和工作温度的步骤，使得不超过最大电流水平。 在一个示例性实施例中，温度范围为约-5℃至约75℃的约50℃的操作温度允许约300mA的最大电流。

公开(公告)号：US08025927B2

公开(公告)日：2011-09-27

申请号：US11666822

申请日：2005-09-29

申请人： Peng-Fei Fu ,  Eric Scott Moyer ,  Craig Rollin Yeakle

发明人： Peng-Fei Fu ,  Eric Scott Moyer ,  Craig Rollin Yeakle

IPC分类号： B05D3/02

CPC分类号： C09D183/04 ,  G03F7/0757 ,  G03F7/091

摘要： A method of forming an antireflective coating on an electronic device comprising (A) applying to an electronic device an ARC composition comprising (i) a silsesquioxane resin having the formula (PhSiO(3-X)/2(OH)x)mHSiO(3-x)/2(OH)x)N(MeSiO(3-x)/2(OH)x)p where Ph is a phenyl group, Me is a methyl group, x has a value of 0, 1 or 2; m has a value of 0.05 to 0.95, n has a value of 0.05 to 0.95, p has a value of 0.05 to 0.95, and m+n+p≈1; and (ii) a solvent; and (B) removing the solvent and curing the silsesquioxane resin to form an antireflective coating on the electronic device.

摘要翻译： 一种在电子器件上形成抗反射涂层的方法，包括（A）向电子器件施加ARC组合物，其包含（i）具有式（PhSiO（3-X）/ 2（OH）x）mHSiO（3）的倍半硅氧烷树脂 -x）/ 2（OH）x）N（MeSiO（3-x）/ 2（OH）x）p其中Ph是苯基，Me是甲基，x具有0,1或2的值; m的值为0.05〜0.95，n为0.05〜0.95，p为0.05〜0.95，m + n +p≈1; 和（ii）溶剂; 和（B）除去溶剂并固化倍半硅氧烷树脂以在电子器件上形成抗反射涂层。

公开(公告)号：US07833696B2

公开(公告)日：2010-11-16

申请号：US11666823

申请日：2005-09-29

申请人： Peng-Fei Fu ,  Eric Scott Moyer ,  Craig Rollin Yeakle

发明人： Peng-Fei Fu ,  Eric Scott Moyer ,  Craig Rollin Yeakle

IPC分类号： G03F7/075

CPC分类号： C23C18/1295 ,  C08G77/12 ,  C09D183/04 ,  C23C18/06 ,  C23C18/122 ,  G03F7/091 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/3124 ,  Y10T428/24463 ,  Y10T428/31663

摘要： Silsesquioxane resins useful in forming the antireflective coating having the formula (PhSiO(3-x)/2(OH)x)mHSiO(3-x)/2(OH)x)n(MeSiO(3-x)/2(OH)x)p(RSiO(3-x)/2(OH)x)q where Ph is a phenyl group, Me is a methyl group, R is selected from ester groups and polyether groups, x has a value of 0, 1 or 2; m has a value of 0.05 to 0.95, n has a value of 0.05 to 0.95, p has a value of 0.05 to 0.95, q has a value of 0.01 to 0.30 and m+n+p+q≈1.

摘要翻译： 可用于形成具有式（PhSiO（3-x）/ 2（OH）x）mHSiO（3-x）/ 2（OH）x）n（MeSiO（3-x）/ 2（OH））的抗反射涂层的倍半硅氧烷树脂 ）x）p（RSiO（3-x）/ 2（OH）x）q其中Ph是苯基，Me是甲基，R选自酯基和聚醚基团，x的值为0,1 或2; m的值为0.05〜0.95，n为0.05〜0.95，p为0.05〜0.95，q为0.01〜0.30，m + n + p +q≈1。

公开(公告)号：US20100279025A1

公开(公告)日：2010-11-04

申请号：US12811224

申请日：2008-11-18

申请人： Peng-Fei Fu ,  Eric Scott Moyer

发明人： Peng-Fei Fu ,  Eric Scott Moyer

IPC分类号： C08L83/06 ,  B05D5/12 ,  C08F2/48

CPC分类号： C08K5/5419 ,  C08G77/04 ,  C08G77/045 ,  C08G77/12 ,  C08G77/14 ,  C08G77/20 ,  C08G77/70 ,  C09D183/04 ,  G02B1/111 ,  G03F7/0752 ,  G03F7/091

摘要： This invention pertains to silsesquioxane resins useful in antireflective coatings wherein the silsesquioxane resin has the formula (PhSiO(3-x)/2(OR′)x)m(HSiO(3-x)/2(OR′)x)n(MeSiO(3-x)/2(OR′)x)o(RSiO(3-x)/2(OR′)η)p where Ph is a phenyl group Me is a methyl group, R is selected from a reactive organic functional group or curable group, R′ is hydride or a hydrocarbon group, x has a value of 0, 1 or 2; m has a value of 0.01 to 0.97, n has a value of 0.01 to 0.97, o has a value of 0.01 to 0.97, p has a value of 0.01 to 0.97, and m+n+o+p=1. The resins are cured when baked at elevated temperatures. Alternatively, the compositions may comprise a free radical initiator or other additives such as thermal or photo acids and bases to improve the cure profile of the resin. In addition, the presence of a hydride group in the silsesquioxane resin is essential for the desired strip-ability as a 193 nm ARC material.

摘要翻译： 本发明涉及可用于抗反射涂料的倍半硅氧烷树脂，其中倍半硅氧烷树脂具有式（PhSiO（3-x）/ 2（OR'）x）m（HSiO（3-x）/ 2（OR'）x）n（ MeSiO（3-x）/ 2（OR'）x）o（RSiO（3-x）/ 2（OR'）eegr）p其中Ph是苯基Me是甲基，R选自反应性 有机官能团或可固化基团，R'是氢化物或烃基，x具有0,1或2的值; m的值为0.01〜0.97，n为0.01〜0.97，o为0.01〜0.97，p为0.01〜0.97，m + n + o + p = 1。 树脂在升高的温度下烘烤时固化。 或者，组合物可以包含自由基引发剂或其它添加剂，例如热或光酸和碱，以改善树脂的固化分布。 此外，在倍半硅氧烷树脂中存在氢化物基团对于作为193nm ARC材料的期望剥离性而言是必需的。

公开(公告)号：US09023433B2

公开(公告)日：2015-05-05

申请号：US12811224

申请日：2008-11-18

申请人： Peng-Fei Fu ,  Eric Scott Moyer

发明人： Peng-Fei Fu ,  Eric Scott Moyer

IPC分类号： C08F2/48 ,  C08K5/5419 ,  C08G77/04 ,  C09D183/04 ,  G03F7/075 ,  G03F7/09 ,  C08G77/12 ,  C08G77/14 ,  C08G77/20 ,  C08G77/00

CPC分类号： C08K5/5419 ,  C08G77/04 ,  C08G77/045 ,  C08G77/12 ,  C08G77/14 ,  C08G77/20 ,  C08G77/70 ,  C09D183/04 ,  G02B1/111 ,  G03F7/0752 ,  G03F7/091

摘要： A silsesquioxane resins useful in antireflective coatings wherein the silsesquioxane resin has the formula (PhSiO(3-x)/2(OR′)x)m(HSiO(3-x)/2(OR′)x)n(MeSiO(3-x)/2(OR′)x)o(RSiO(3-x)/2(OR′)x)p and a method of forming an antireflective coating on an electronic device comprising applying to an electronic device an antireflective coating composition comprising the silsesquioxane resin and a solvent, and removing the solvent and curing the silsesquioxane resin to form an antireflective coating on the electronic device.

摘要翻译： 可用于抗反射涂料的倍半硅氧烷树脂，其中倍半硅氧烷树脂具有式（PhSiO（3-x）/ 2（OR'）x）m（HSiO（3-x）/ 2（OR'）x）n（MeSiO -x）/ 2（OR'）x）o（RSiO（3-x）/ 2（OR'）x）p和在电子器件上形成抗反射涂层的方法，包括向电子器件施加抗反射涂层组合物 包括倍半硅氧烷树脂和溶剂，除去溶剂并固化倍半硅氧烷树脂，以在电子器件上形成抗反射涂层。

公开(公告)号：US08653217B2

公开(公告)日：2014-02-18

申请号：US13212396

申请日：2011-08-18

申请人： Peng-Fei Fu ,  Eric Scott Moyer ,  Craig Rollin Yeakle

发明人： Peng-Fei Fu ,  Eric Scott Moyer ,  Craig Rollin Yeakle

IPC分类号： C08G77/12

CPC分类号： C08G77/16

摘要： A method of forming an antireflective coating on an electronic device comprising (A) applying to an electronic device an ARC composition comprising (i) a silsesquioxane resin having the formula (PhSiO(3-X)/2(OH)x)mHSiO(3-x)/2(OH)x)N(MeSiO(3-x)/2(OH)x)p where Ph is a phenyl group, Me is a methyl group, x has a value of 0, 1 or 2; m has a value of 0.05 to 0.95, n has a value of 0.05 to 0.95, p has a value of 0.05 to 0.95, and m+n+p≈1; and (ii) a solvent; and (B) removing the solvent and curing the silsesquioxane resin to form an antireflective coating on the electronic device.

摘要翻译： 一种在电子器件上形成抗反射涂层的方法，包括（A）向电子器件施加ARC组合物，其包含（i）具有式（PhSiO（3-X）/ 2（OH）x）mHSiO（3）的倍半硅氧烷树脂 -x）/ 2（OH）x）N（MeSiO（3-x）/ 2（OH）x）p其中Ph为苯基，Me为甲基，x为0,1或2; m的值为0.05〜0.95，n为0.05〜0.95，p为0.05〜0.95，m + n +p≈1; 和（ii）溶剂; 和（B）除去溶剂并固化倍半硅氧烷树脂以在电子器件上形成抗反射涂层。

公开(公告)号：US08241707B2

公开(公告)日：2012-08-14

申请号：US12919052

申请日：2009-02-03

申请人： Peng-Fei Fu ,  Eric Scott Moyer

发明人： Peng-Fei Fu ,  Eric Scott Moyer

IPC分类号： B32B9/04 ,  G03F7/075

CPC分类号： C09D183/04 ,  C08G77/04 ,  C08G77/045 ,  C08G77/12 ,  C08G77/14 ,  C08G77/70 ,  G02B1/111 ,  G03F7/0752 ,  G03F7/091

摘要： This invention pertains to silsesquioxane resins useful in antireflective coatings wherein the silsesquioxane resin is comprised of the units (Ph(CH2)rSiO(3−x)/2(OR′)x)m (HSiO(3−x)/2(OR′)x)n (MeSiO(3−x)/2(OR′)x)o (RSiO(3−x)/2(OR′)x)p (R1SiO(3−x)/2(OR′)x)q where Ph is a phenyl group, Me is a methyl group; R′ is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from a hydroxyl producing group; and R1 is selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0.95; n has a value of 0.05 to 0.95; o has a value of 0.05 to 0.95; p has a value of 0.05 to 0.5; q has a value of 0 to 0.5; and m+n+o+p+q≈1.

摘要翻译： 本发明涉及可用于抗反射涂料的倍半硅氧烷树脂，其中倍半硅氧烷树脂由单元（Ph（CH 2）r SiO（3-x）/ 2（OR'）x）m（HSiO（3-x）/ 2 '（x'）x（x）n（MeSiO（3-x）/ 2（OR'）x）o（RSiO（3-x）/ 2 其中Ph是苯基，Me是甲基; R'是氢原子或具有1至4个碳原子的烃基; R选自羟基生成基团; 并且R 1选自取代的苯基，酯基，聚醚基团; 巯基和反应性或可固化的有机官能团; 并且r的值为0,1,2,3或4; x的值为0,1或2; 其中，所述树脂m的值为0〜0.95; n的值为0.05〜0.95; o的值为0.05〜0.95; p的值为0.05〜0.5; q的值为0〜0.5; 和m + n + o + p +q≈1。

公开(公告)号：US07756384B2

公开(公告)日：2010-07-13

申请号：US11666813

申请日：2005-09-29

申请人： Peng-Fei Fu ,  Eric Scott Moyer ,  Craig Rollin Yeakle

发明人： Peng-Fei Fu ,  Eric Scott Moyer ,  Craig Rollin Yeakle

IPC分类号： G02B6/00

CPC分类号： H01S5/02415 ,  C09D183/04 ,  G03F7/0757 ,  G03F7/091 ,  H01S5/0612

摘要： A method of forming an antireflective coating on an electronic device comprising (A) applying to an electronic device an ARC composition comprising (i) a silsesquioxane resin having the formula (PhSiO(3-x)/2(OHx)m HSiO(3-x)/2(OH)x)n, where Ph is a phenyl group, x has a value of 0, 1 or 2; m has a value of 0.05 to 0.95, n has a value of 0.05 to 0.95 and m+n≈1; and (ii) a solvent; and (B) removing the solvent and curing the silsesquioxane resin to form an antireflective coating on the electronic device.

摘要翻译： 一种在电子器件上形成抗反射涂层的方法，包括：（A）向电子器件施加ARC组合物，其包含（i）具有式（PhSiO（3-x）/ 2（OH x）m HSiO（3- x）/ 2（OH）x）n，其中Ph是苯基，x具有0,1或2的值; m的值为0.05〜0.95，n为0.05〜0.95，m +n≈1; 和（ii）溶剂; 和（B）除去溶剂并固化倍半硅氧烷树脂以在电子器件上形成抗反射涂层。