公开(公告)号：US20240072032A1

公开(公告)日：2024-02-29

申请号：US17894043

申请日：2022-08-23

Applicant: QUALCOMM Incorporated

Inventor： Yanmei SONG ,  William STONE ,  Jianwen XU ,  Senthil SIVASWAMY ,  John HOLMES ,  Ryan LANE

IPC: H01L25/00 ,  H01L21/48 ,  H01L23/00 ,  H01L23/538 ,  H01L25/065 ,  H01L25/18

CPC classification number: H01L25/50 ,  H01L21/4853 ,  H01L21/4857 ,  H01L23/5389 ,  H01L24/05 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/73 ,  H01L24/81 ,  H01L24/82 ,  H01L24/92 ,  H01L24/95 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/18 ,  H01L27/016 ,  H01L2224/0557 ,  H01L2224/16145 ,  H01L2224/19 ,  H01L2224/211 ,  H01L2224/214 ,  H01L2224/224 ,  H01L2224/24155 ,  H01L2224/73209 ,  H01L2224/81815 ,  H01L2224/821 ,  H01L2224/92124 ,  H01L2225/06513 ,  H01L2225/06524

Abstract: A package comprising a first metallization portion, a first integrated device coupled to the first metallization portion through a first plurality of pillar interconnects, and a first chiplet located between the first integrated device and the first metallization portion. The first chiplet is coupled to the first integrated device through a first plurality of inter pillar interconnects. The first chiplet may include an active chiplet. The first chiplet may include a passive chiplet.

公开(公告)号：US20210118834A1

公开(公告)日：2021-04-22

申请号：US17071432

申请日：2020-10-15

Applicant: QUALCOMM Incorporated

Inventor： Yangyang SUN ,  John HOLMES ,  Xuefeng ZHANG ,  Dongming HE

IPC: H01L23/00

Abstract: Disclosed are devices, fabrication methods and design rules for flip-chip devices. Aspects include an apparatus including a flip-chip device. The flip-chip device including a die having a plurality of under bump metallizations (UBMs). A package substrate having a plurality of bond pads is also included. A plurality of solder joints coupling the die to the package substrate. The plurality of solder joints are formed from a plurality of solder bumps plated on the plurality of UBMs, where the plurality of solder bumps are directly connected to the plurality of bond pads.

公开(公告)号：US20240071993A1

公开(公告)日：2024-02-29

申请号：US17894057

申请日：2022-08-23

Applicant: QUALCOMM Incorporated

Inventor： Yanmei SONG ,  William STONE ,  Jianwen XU ,  John HOLMES ,  Ryan LANE

IPC: H01L25/065 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538

CPC classification number: H01L25/0652 ,  H01L21/4853 ,  H01L21/56 ,  H01L23/3157 ,  H01L23/5381 ,  H01L23/5383 ,  H01L23/5389 ,  H01L24/16 ,  H01L2224/16235

Abstract: A package comprising a first metallization portion, a first integrated device coupled to the first metallization portion, a second integrated device coupled to the first metallization portion, a second metallization portion coupled to the first metallization portion through a first plurality of pillar interconnects, a first chiplet located between the first metallization portion and the second metallization portion, wherein the first chiplet is configured to be electrically coupled to the first integrated device through the first metallization portion, and a second chiplet located between the first metallization portion and the second metallization portion, wherein the second chiplet is configured to be electrically coupled to the second integrated device through the first metallization portion.

公开(公告)号：US20210249325A1

公开(公告)日：2021-08-12

申请号：US16789272

申请日：2020-02-12

Applicant: QUALCOMM Incorporated

Inventor： David Fraser RAE ,  John HOLMES ,  Marcus HSU ,  Kuiwon KANG ,  Avantika SODHI

IPC: H01L23/367 ,  H01L23/498 ,  H01L21/56 ,  H01L23/31 ,  H01L23/42

Abstract: A package that includes a first substrate, an integrated device coupled to the first substrate, a second substrate coupled to the integrated device, and an encapsulation layer located between the first substrate and the second substrate. The second substrate is configured to operate as a heat spreader. The second substrate is configured to be free of an electrical connection with the integrated device.