公开(公告)号：US20160343646A1

公开(公告)日：2016-11-24

申请号：US14836501

申请日：2015-08-26

Applicant: QUALCOMM Incorporated

Inventor： Reynante Tamunan Alvarado ,  Lizabeth Ann Keser ,  Tong Cui

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/49811 ,  H01L21/4857 ,  H01L23/15 ,  H01L23/49822 ,  H01L23/49827 ,  H01L24/02 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/20 ,  H01L24/81 ,  H01L24/94 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/0332 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/056 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13027 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13561 ,  H01L2224/13563 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/1601 ,  H01L2224/16058 ,  H01L2224/16227 ,  H01L2224/21 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/15312 ,  H01L2924/181 ,  H01L2924/381 ,  H05K3/3426 ,  H05K2201/10704 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2224/0231 ,  H01L2924/01029 ,  H01L2924/07025 ,  H01L2924/067

Abstract: A package (e.g., wafer level package) that includes a die, a redistribution portion coupled to the die, a first high aspect ratio (HAR) interconnect coupled to the redistribution portion of the package, where the first high aspect ratio (HAR) interconnect comprises a width to height ratio of about at least 1:2, and a first solder interconnect coupled to the first high aspect ratio (HAR) interconnect and the redistribution portion. In some implementations, the first high aspect ratio (HAR) interconnect is a composite interconnect that includes a first conductive core and a first conductive layer that at least partially encapsulates the first conductive core. In some implementations, the first conductive layer is a diffusion barrier.

Abstract translation: 包括管芯，耦合到管芯的再分配部分的封装（例如，晶片级封装），耦合到封装的再分配部分的第一高纵横比（HAR）互连，其中第一高纵横比（HAR）互连 包括大约至少1:2的宽高比，以及耦合到第一高纵横比（HAR）互连和再分配部分的第一焊料互连。 在一些实现中，第一高宽比（HAR）互连是复合互连，其包括第一导电芯和至少部分地封装第一导电芯的第一导电层。 在一些实施方案中，第一导电层是扩散阻挡层。