公开(公告)号：US11948873B2

公开(公告)日：2024-04-02

申请号：US17555583

申请日：2021-12-20

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jeonghyun Lee ,  Dongwook Kim ,  Hwan Pil Park ,  Jongbo Shim

IPC分类号： H01L23/498 ,  H01L23/00 ,  H01L23/16 ,  H01L23/31

CPC分类号： H01L23/49816 ,  H01L23/16 ,  H01L23/31 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L2224/13001 ,  H01L2224/13005 ,  H01L2224/13006 ,  H01L2224/1301 ,  H01L2224/13016 ,  H01L2224/1302 ,  H01L2224/13561 ,  H01L2224/13562 ,  H01L2224/13563 ,  H01L2225/1058

摘要： A semiconductor package including: a first substrate; a first semiconductor device on the first substrate; a first mold layer covering the first semiconductor device; a second substrate on the first mold layer; a support solder ball interposed between the first substrate and the second substrate, and electrically disconnected from the first substrate or the second substrate, wherein the support solder ball includes a core and is disposed near a first sidewall of the first semiconductor device; and a substrate connection solder ball disposed between the first sidewall of the first semiconductor device and the support solder ball to electrically connect the first substrate to the second substrate, wherein a top surface of the first semiconductor device has a first height from a top surface of the first substrate, and the core has a second height which is equal to or greater than the first height.

公开(公告)号：US08215969B2

公开(公告)日：2012-07-10

申请号：US12144658

申请日：2008-06-24

申请人： Sheng-Shu Yang ,  Shyh-Ming Chang

发明人： Sheng-Shu Yang ,  Shyh-Ming Chang

IPC分类号： H01R4/58

CPC分类号： H05K3/4007 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05567 ,  H01L2224/1147 ,  H01L2224/13007 ,  H01L2224/13008 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13019 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13078 ,  H01L2224/1319 ,  H01L2224/13562 ,  H01L2224/13563 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/1401 ,  H01L2224/1411 ,  H01L2224/1415 ,  H01L2224/16 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81903 ,  H01L2224/83101 ,  H01L2224/83851 ,  H01L2224/83862 ,  H01L2224/83874 ,  H01L2224/9211 ,  H01L2924/0001 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01033 ,  H01L2924/15788 ,  H01R12/714 ,  H05K3/325 ,  H05K3/368 ,  H05K2201/0367 ,  H05K2201/09909 ,  Y10S439/931 ,  Y10T29/49155 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： A contact structure disposed on a substrate is provided. The contact structure includes a pad, a polymer bump and a conductive layer. The pad is on the substrate. The polymer bump having a curve surface and a steep surface connecting with the curve surface is disposed on the substrate. The polymer bump is covered by the conductive layer and the conductive layer is electrically connected with the pad.

摘要翻译： 设置在基板上的接触结构。 接触结构包括垫，聚合物凸块和导电层。 衬垫在衬底上。 具有弯曲表面和与曲面连接的陡峭表面的聚合物凸块设置在基板上。 聚合物凸块被导电层覆盖，并且导电层与焊盘电连接。

公开(公告)号：US20080211092A1

公开(公告)日：2008-09-04

申请号：US12020508

申请日：2008-01-25

申请人： Su-Tsai LU

发明人： Su-Tsai LU

IPC分类号： H01L23/498

CPC分类号： H01L24/16 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/12 ,  H01L24/17 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05567 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13016 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/13563 ,  H01L2224/1358 ,  H01L2224/136 ,  H01L2224/1401 ,  H01L2224/14051 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2224/81903 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/83851 ,  H01L2224/83856 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0781 ,  H01L2924/07811 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/05099

摘要： An electronic assembly comprising a first substrate, a number of bonds on the first substrate, a second substrate spaced apart from the first substrate, a number of bumps on the second substrate, each of the bumps including an insulating body and a conductive portion, the conductive portion extending from a top surface of the insulating body via at least one sidewall of the insulating body toward the second substrate, and an adhesive between the first substrate and the second substrate, the adhesive including an insulating layer and a conductive layer, the insulating layer and the conductive layer being laminated with respect to each other, wherein the insulating layer is positioned closer to the first substrate than the conductive layer.

摘要翻译： 一种电子组件，包括第一基板，第一基板上的多个键，与第一基板间隔开的第二基板，第二基板上的多个凸块，每个凸块包括绝缘体和导电部分， 所述导电部分通过所述绝缘体的至少一个侧壁朝向所述第二基板从所述绝缘体的顶表面延伸，以及所述第一基板和所述第二基板之间的粘合剂，所述粘合剂包括绝缘层和导电层，所述绝缘体 层，并且所述导电层相对于彼此层叠，其中所述绝缘层位于比所述导电层更靠近所述第一基板的位置。

公开(公告)号：US09508669B2

公开(公告)日：2016-11-29

申请号：US15202749

申请日：2016-07-06

申请人： MURATA MANUFACTURING CO., LTD.

发明人： Yasunari Umemoto ,  Daisuke Tokuda ,  Tsunekazu Saimei ,  Hiroaki Tokuya

IPC分类号： H01L29/737 ,  H01L23/00 ,  H01L29/66 ,  H01L29/08

CPC分类号： H01L24/13 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L29/0692 ,  H01L29/0817 ,  H01L29/20 ,  H01L29/205 ,  H01L29/41708 ,  H01L29/66234 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/6631 ,  H01L29/66318 ,  H01L29/732 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/7375 ,  H01L29/7378 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05666 ,  H01L2224/1134 ,  H01L2224/13013 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13026 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13563 ,  H01L2224/13611 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/07025 ,  H01L2924/10329 ,  H01L2924/10337 ,  H01L2924/10338 ,  H01L2924/13051 ,  H01L2924/13055 ,  H01L2924/1423 ,  H01L2924/351 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/014

摘要： A semiconductor device that includes a bipolar transistor, wherein a third opening, through which a pillar bump and a second wiring line, which is electrically connected to an emitter layer, contact each other, is shifted in a longitudinal direction of the emitter layer away from a position at which the third opening would be directly above the emitter layer. The third opening is arranged, with respect to the emitter layer, such that an end portion of the emitter layer in the longitudinal direction of the emitter layer and the edge of the opening of the third opening are substantially aligned with each other.

摘要翻译： 一种包括双极晶体管的半导体器件，其中与发射极层电连接的柱凸起和第二布线彼此接触的第三开口在发射极层的纵向方向上偏离 第三开口直接位于发射极层上方的位置。 第三开口相对于发射极层布置成使得发射极层的纵向方向上的发射极层的端部和第三开口的开口的边缘基本上彼此对准。

公开(公告)号：US20090246988A1

公开(公告)日：2009-10-01

申请号：US12144658

申请日：2008-06-24

申请人： Sheng-Shu Yang ,  Shyh-Ming Chang

发明人： Sheng-Shu Yang ,  Shyh-Ming Chang

IPC分类号： H01R4/58 ,  H05K3/02

CPC分类号： H05K3/4007 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05567 ,  H01L2224/1147 ,  H01L2224/13007 ,  H01L2224/13008 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13019 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13078 ,  H01L2224/1319 ,  H01L2224/13562 ,  H01L2224/13563 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/1401 ,  H01L2224/1411 ,  H01L2224/1415 ,  H01L2224/16 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81903 ,  H01L2224/83101 ,  H01L2224/83851 ,  H01L2224/83862 ,  H01L2224/83874 ,  H01L2224/9211 ,  H01L2924/0001 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01033 ,  H01L2924/15788 ,  H01R12/714 ,  H05K3/325 ,  H05K3/368 ,  H05K2201/0367 ,  H05K2201/09909 ,  Y10S439/931 ,  Y10T29/49155 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： A contact structure disposed on a substrate is provided. The contact structure includes a pad, a polymer bump and a conductive layer. The pad is on the substrate. The polymer bump having a curve surface and a steep surface connecting with the curve surface is disposed on the substrate. The polymer bump is covered by the conductive layer and the conductive layer is electrically connected with the pad.

摘要翻译： 设置在基板上的接触结构。 接触结构包括垫，聚合物凸块和导电层。 衬垫在衬底上。 具有弯曲表面和与曲面连接的陡峭表面的聚合物凸块设置在基板上。 聚合物凸块被导电层覆盖，并且导电层与焊盘电连接。

公开(公告)号：US20180233475A1

公开(公告)日：2018-08-16

申请号：US15954420

申请日：2018-04-16

申请人： MURATA MANUFACTURING CO., LTD.

发明人： Yasunari UMEMOTO ,  Daisuke TOKUDA ,  Tsunekazu SAIMEI ,  Hiroaki TOKUYA

IPC分类号： H01L23/00 ,  H01L29/08 ,  H01L29/737 ,  H01L29/66 ,  H01L29/20 ,  H01L29/732 ,  H01L29/205 ,  H01L29/417

CPC分类号： H01L24/13 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L29/0692 ,  H01L29/0817 ,  H01L29/20 ,  H01L29/205 ,  H01L29/41708 ,  H01L29/66234 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/6631 ,  H01L29/66318 ,  H01L29/732 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/7375 ,  H01L29/7378 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05666 ,  H01L2224/1134 ,  H01L2224/13013 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13026 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13563 ,  H01L2224/13611 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/07025 ,  H01L2924/10329 ,  H01L2924/10337 ,  H01L2924/10338 ,  H01L2924/13051 ,  H01L2924/13055 ,  H01L2924/1423 ,  H01L2924/351 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/014

摘要： A semiconductor device that includes a bipolar transistor, wherein a third opening, through which a pillar bump and a second wiring line, which is electrically connected to an emitter layer, contact each other, is shifted in a longitudinal direction of the emitter layer away from a position at which the third opening would be directly above the emitter layer. The third opening is arranged, with respect to the emitter layer, such that an end portion of the emitter layer in the longitudinal direction of the emitter layer and the edge of the opening of the third opening are substantially aligned with each other.

公开(公告)号：US09991217B2

公开(公告)日：2018-06-05

申请号：US15361336

申请日：2016-11-25

申请人： MURATA MANUFACTURING CO., LTD.

发明人： Yasunari Umemoto ,  Daisuke Tokuda ,  Tsunekazu Saimei ,  Hiroaki Tokuya

IPC分类号： H01L29/737 ,  H01L23/00 ,  H01L29/417 ,  H01L29/732 ,  H01L29/08 ,  H01L29/66 ,  H01L29/20 ,  H01L29/205

CPC分类号： H01L24/13 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L29/0692 ,  H01L29/0817 ,  H01L29/20 ,  H01L29/205 ,  H01L29/41708 ,  H01L29/66234 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/6631 ,  H01L29/66318 ,  H01L29/732 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/7375 ,  H01L29/7378 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05666 ,  H01L2224/1134 ,  H01L2224/13013 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13026 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13563 ,  H01L2224/13611 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/07025 ,  H01L2924/10329 ,  H01L2924/10337 ,  H01L2924/10338 ,  H01L2924/13051 ,  H01L2924/13055 ,  H01L2924/1423 ,  H01L2924/351 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/014

摘要： A semiconductor device that includes a bipolar transistor, wherein a third opening, through which a pillar bump and a second wiring line, which is electrically connected to an emitter layer, contact each other, is shifted in a longitudinal direction of the emitter layer away from a position at which the third opening would be directly above the emitter layer. The third opening is arranged, with respect to the emitter layer, such that an end portion of the emitter layer in the longitudinal direction of the emitter layer and the edge of the opening of the third opening are substantially aligned with each other.

公开(公告)号：US20170077054A1

公开(公告)日：2017-03-16

申请号：US15361336

申请日：2016-11-25

申请人： MURATA MANUFACTURING CO., LTD.

发明人： Yasunari UMEMOTO ,  Daisuke TOKUDA ,  Tsunekazu SAIMEI ,  Hiroaki TOKUYA

IPC分类号： H01L23/00 ,  H01L29/20 ,  H01L29/205 ,  H01L29/737

CPC分类号： H01L24/13 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L29/0692 ,  H01L29/0817 ,  H01L29/20 ,  H01L29/205 ,  H01L29/41708 ,  H01L29/66234 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/6631 ,  H01L29/66318 ,  H01L29/732 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/7375 ,  H01L29/7378 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05666 ,  H01L2224/1134 ,  H01L2224/13013 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13026 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13563 ,  H01L2224/13611 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/07025 ,  H01L2924/10329 ,  H01L2924/10337 ,  H01L2924/10338 ,  H01L2924/13051 ,  H01L2924/13055 ,  H01L2924/1423 ,  H01L2924/351 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/014

摘要： A semiconductor device that includes a bipolar transistor, wherein a third opening, through which a pillar bump and a second wiring line, which is electrically connected to an emitter layer, contact each other, is shifted in a longitudinal direction of the emitter layer away from a position at which the third opening would be directly above the emitter layer. The third opening is arranged, with respect to the emitter layer, such that an end portion of the emitter layer in the longitudinal direction of the emitter layer and the edge of the opening of the third opening are substantially aligned with each other.

摘要翻译： 一种包括双极晶体管的半导体器件，其中与发射极层电连接的柱凸起和第二布线彼此接触的第三开口在发射极层的纵向方向上偏离 第三开口直接位于发射极层上方的位置。 第三开口相对于发射极层布置成使得发射极层的纵向方向上的发射极层的端部和第三开口的开口的边缘基本上彼此对准。

公开(公告)号：US20160343646A1

公开(公告)日：2016-11-24

申请号：US14836501

申请日：2015-08-26

申请人： QUALCOMM Incorporated

发明人： Reynante Tamunan Alvarado ,  Lizabeth Ann Keser ,  Tong Cui

IPC分类号： H01L23/498 ,  H01L21/48

CPC分类号： H01L23/49811 ,  H01L21/4857 ,  H01L23/15 ,  H01L23/49822 ,  H01L23/49827 ,  H01L24/02 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/20 ,  H01L24/81 ,  H01L24/94 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/0332 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/056 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13027 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13561 ,  H01L2224/13563 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/1601 ,  H01L2224/16058 ,  H01L2224/16227 ,  H01L2224/21 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/15312 ,  H01L2924/181 ,  H01L2924/381 ,  H05K3/3426 ,  H05K2201/10704 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2224/0231 ,  H01L2924/01029 ,  H01L2924/07025 ,  H01L2924/067

摘要： A package (e.g., wafer level package) that includes a die, a redistribution portion coupled to the die, a first high aspect ratio (HAR) interconnect coupled to the redistribution portion of the package, where the first high aspect ratio (HAR) interconnect comprises a width to height ratio of about at least 1:2, and a first solder interconnect coupled to the first high aspect ratio (HAR) interconnect and the redistribution portion. In some implementations, the first high aspect ratio (HAR) interconnect is a composite interconnect that includes a first conductive core and a first conductive layer that at least partially encapsulates the first conductive core. In some implementations, the first conductive layer is a diffusion barrier.

摘要翻译： 包括管芯，耦合到管芯的再分配部分的封装（例如，晶片级封装），耦合到封装的再分配部分的第一高纵横比（HAR）互连，其中第一高纵横比（HAR）互连 包括大约至少1:2的宽高比，以及耦合到第一高纵横比（HAR）互连和再分配部分的第一焊料互连。 在一些实现中，第一高宽比（HAR）互连是复合互连，其包括第一导电芯和至少部分地封装第一导电芯的第一导电层。 在一些实施方案中，第一导电层是扩散阻挡层。

公开(公告)号：US20160315060A1

公开(公告)日：2016-10-27

申请号：US15202749

申请日：2016-07-06

申请人： MURATA MANUFACTURING CO., LTD.

发明人： Yasunari UMEMOTO ,  Daisuke TOKUDA ,  Tsunekazu SAIMEI ,  Hiroaki TOKUYA

IPC分类号： H01L23/00 ,  H01L29/737

CPC分类号： H01L24/13 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L29/0692 ,  H01L29/0817 ,  H01L29/20 ,  H01L29/205 ,  H01L29/41708 ,  H01L29/66234 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/6631 ,  H01L29/66318 ,  H01L29/732 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/7375 ,  H01L29/7378 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05666 ,  H01L2224/1134 ,  H01L2224/13013 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13026 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13563 ,  H01L2224/13611 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/07025 ,  H01L2924/10329 ,  H01L2924/10337 ,  H01L2924/10338 ,  H01L2924/13051 ,  H01L2924/13055 ,  H01L2924/1423 ,  H01L2924/351 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/014

摘要： A semiconductor device that includes a bipolar transistor, wherein a third opening, through which a pillar bump and a second wiring line, which is electrically connected to an emitter layer, contact each other, is shifted in a longitudinal direction of the emitter layer away from a position at which the third opening would be directly above the emitter layer. The third opening is arranged, with respect to the emitter layer, such that an end portion of the emitter layer in the longitudinal direction of the emitter layer and the edge of the opening of the third opening are substantially aligned with each other.

摘要翻译： 一种包括双极晶体管的半导体器件，其中与发射极层电连接的柱凸起和第二布线彼此接触的第三开口在发射极层的纵向方向上偏离 第三开口直接位于发射极层上方的位置。 第三开口相对于发射极层布置成使得发射极层的纵向方向上的发射极层的端部和第三开口的开口的边缘基本上彼此对准。