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公开(公告)号：US10566896B2
公开(公告)日：2020-02-18
申请号：US16055792
申请日：2018-08-06
Applicant: RAYTHEON COMPANY
Inventor： Boris S. Jacobson , Steven D. Bernstein , Steven M. Lardizabal , Jason Adams , Jeffrey R. Laroche
Abstract: A power converter assembly is provided and includes high quality factor (Q) shield-to-transistor integrated low-inductance capacitor elements to divert common mode (CM) currents, high Q shield-to-shield integrated low-inductance capacitor elements to compliment line-to-line filter capacitors and high Q baseplate integrated low-inductance capacitor elements to attenuate residual CM currents.
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2.发明申请公开(公告)号：US20230065622A1
公开(公告)日：2023-03-02
申请号：US17465633
申请日：2021-09-02
Applicant: Raytheon Company
Inventor： Miroslav Micovic , Karen Kaneko Baker , Christopher Carbonneau , Katherine J. Herrick , Teresa J. Clement , Jeffrey R. Laroche
IPC: H01L23/427 , H01L25/065 , H01L23/00 , H01L25/00 , H03F3/24 , H01Q3/24
Abstract: An Array Core Block for an AESA includes a stack of 2*M alternating N-channel RFIC and MMIC Power Amplifier wafers bonded together by a wafer-scale direct bond hybrid (DBH) interconnect process. This process forms both metal-to-metal and dielectric hydrogen bonds between bonding surfaces to seal the wafer stack. Each array core block includes an array of through substrate metal vias to distribute DC bias, LO and information signals. Each array core block also includes a cooling system including micro-channels formed on a backside of at least one of the chips in each bonded pair and through substrate via holes formed through the stack that operatively couple the micro-channels for all of the bonded pairs to receive and circulate a fluid through the micro-channels and through substrate via holes to cool the RFIC and MMIC Power Amplifier chips and to extract the heated fluid.
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公开(公告)号：US11205953B2
公开(公告)日：2021-12-21
申请号：US16741318
申请日：2020-01-13
Applicant: RAYTHEON COMPANY
Inventor： Boris S. Jacobson , Steven D. Bernstein , Steven M. Lardizabal , Jason Adams , Jeffrey R. Laroche
Abstract: A power converter assembly is provided and includes high quality factor (Q) shield-to-transistor integrated low-inductance capacitor elements to divert common mode (CM) currents, high Q shield-to-shield integrated low-inductance capacitor elements to compliment line-to-line filter capacitors and high Q baseplate integrated low-inductance capacitor elements to attenuate residual CM currents.
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4.发明申请公开(公告)号：US20190081567A1
公开(公告)日：2019-03-14
申请号：US15703455
申请日：2017-09-13
Applicant: Raytheon Company
Inventor： Boris S. Jacobson , Steven D. Bernstein , Steven M. Lardizabal , Jason Adams , Jeffrey R. Laroche
CPC classification number: H02M7/003 , H01F27/28 , H01F27/2804 , H01F27/362 , H01F27/42 , H01F2027/2809 , H02M3/335 , H02M7/04 , H02M2001/007 , H02M2001/008
Abstract: A modular high-power converter system includes an electronic power distribution unit configured to output an analog current (AC) voltage to a power bus, and at least one Transmit or Receive Integrated Microwave Module (T/RIMM) that includes a voltage converter unit and a transmitter and receiver (T/R) unit. The voltage converter unit includes at least one analog-to-digital converter (ADC) to convert the AC voltage into a direct current (DC) voltage having a first DC voltage level. The transmitter and receiver (T/R) unit includes a modular-based DC/DC converter to convert the DC voltage into a second DC voltage having a second voltage. The modular-based DC/DC converter includes a modular power converter unit configured to generate the second DC voltage. The modular converter unit is configured to be independently interchangeable with a different modular converter unit.
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公开(公告)号：US11848662B2
公开(公告)日：2023-12-19
申请号：US17018897
申请日：2020-09-11
Applicant: Raytheon Company
Inventor： Jason C. Soric , Jeffrey R. Laroche , Eduardo M. Chumbes , Adam E. Peczalski
IPC: H03H9/54 , H01L21/02 , H01L29/20 , H01L29/205 , H01L29/66 , H01L29/778 , H03F3/195 , H03H3/02 , H03H9/56 , H04B1/10 , H10N39/00 , H04B1/06
CPC classification number: H03H9/545 , H01L21/0254 , H01L21/02378 , H01L29/2003 , H01L29/205 , H01L29/66462 , H01L29/7786 , H03F3/195 , H03H3/02 , H03H9/562 , H03H9/568 , H04B1/10 , H10N39/00 , H03F2200/294 , H03F2200/451 , H04B1/06
Abstract: Embodiments of a single-chip ScAIN tunable filter bank include a plurality of switching elements, and a plurality of channel filters integrated on a monolithic platform. The monolithic platform may comprise a single crystal base and each of the switching elements may comprise at least one of a scandium aluminum nitride (ScAIN) or other Group III-Nitride transistor structure fabricated on the single crystal base. In these embodiments, each channel filter comprises a multi-layered ScAIN structure comprising one or more a single-crystal epitaxial ScAIN layers fabricated on the single crystal base. The ScAIN layers for each channel filter may be based on desired frequency characteristics of an associated one of the RF channels.
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Patent Agency Ranking
公开(公告)号：US20210273558A1
公开(公告)日：2021-09-02
申请号：US16741318
申请日：2020-01-13
Applicant: RAYTHEON COMPANY
Inventor： Boris S. Jacobson , Steven D. Bernstein , Steven M. Lardizabal , Jason Adams , Jeffrey R. Laroche
Abstract: A power converter assembly is provided and includes high quality factor (Q) shield-to-transistor integrated low-inductance capacitor elements to divert common mode (CM) currents, high Q shield-to-shield integrated low-inductance capacitor elements to compliment line-to-line filter capacitors and high Q baseplate integrated low-inductance capacitor elements to attenuate residual CM currents.
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公开(公告)号：US10340812B2
公开(公告)日：2019-07-02
申请号：US15703455
申请日：2017-09-13
Applicant: Raytheon Company
Inventor： Boris S. Jacobson , Steven D. Bernstein , Steven M. Lardizabal , Jason Adams , Jeffrey R. Laroche
Abstract: A modular high-power converter system includes an electronic power distribution unit configured to output an analog current (AC) voltage to a power bus, and at least one Transmit or Receive Integrated Microwave Module (T/RIMM) that includes a voltage converter unit and a transmitter and receiver (T/R) unit. The voltage converter unit includes at least one analog-to-digital converter (ADC) to convert the AC voltage into a direct current (DC) voltage having a first DC voltage level. The transmitter and receiver (T/R) unit includes a modular-based DC/DC converter to convert the DC voltage into a second DC voltage having a second voltage. The modular-based DC/DC converter includes a modular power converter unit configured to generate the second DC voltage. The modular converter unit is configured to be independently interchangeable with a different modular converter unit.
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公开(公告)号：US20220128409A1
公开(公告)日：2022-04-28
申请号：US17081047
申请日：2020-10-27
Applicant: Raytheon Company
Inventor： Richard Moro, JR. , Erik D. Johnson , Bernard Harris , Jeffrey R. Laroche
Abstract: Disclosed herein are Raman spectrographic systems and methods of assembling Raman spectrographic systems. The Raman spectrographic system includes a light source to emit ultraviolet incident light into a waveguide, and an interaction region traversed by the waveguide and that holds a sample to be identified. A spectrometer detects Raman scatter from an output light in the waveguide emerging from the interaction region following interaction between the incident light and the sample and output a spectral response. The spectrometer includes an array of detectors. Each detector of the array of detectors is a silicon carbide (SiC) detector to obtain information that includes an intensity corresponding with a wavelength of the Raman scatter. A controller identifies the sample based on the spectral response from the array of detectors.
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公开(公告)号：US20220085795A1
公开(公告)日：2022-03-17
申请号：US17018897
申请日：2020-09-11
Applicant: Raytheon Company
Inventor： Jason C. Soric , Jeffrey R. Laroche , Eduardo M. Chumbes , Adam E. Peczalski
IPC: H03H9/54 , H01L27/20 , H01L29/20 , H01L29/205 , H01L29/778 , H03H9/56 , H01L21/02 , H01L29/66 , H03H3/02 , H03F3/195
Abstract: Embodiments of a single-chip ScAIN tunable filter bank include a plurality of switching elements, and a plurality of channel filters integrated on a monolithic platform. The monolithic platform may comprise a single crystal base and each of the switching elements may comprise at least one of a scandium aluminum nitride (ScAIN) or other Group III-Nitride transistor structure fabricated on the single crystal base. In these embodiments, each channel filter comprises a multi-layered ScAIN structure comprising one or more a single-crystal epitaxial ScAIN layers fabricated on the single crystal base. The ScAIN layers for each channel filter may be based on desired frequency characteristics of an associated one of the RF channels.
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公开(公告)号：US20190149039A1
公开(公告)日：2019-05-16
申请号：US16055792
申请日：2018-08-06
Applicant: RAYTHEON COMPANY
Inventor： Boris S. Jacobson , Steven D. Bernstein , Steven M. Lardizabal , Jason Adams , Jeffrey R. Laroche
CPC classification number: H02M1/44 , H01F27/2804 , H01F27/2885 , H01F27/365 , H01F2027/2809 , H01F2027/2819 , H02M1/4258 , H05K1/165 , H05K2201/086
Abstract: A power converter assembly is provided and includes high quality factor (Q) shield-to-transistor integrated low-inductance capacitor elements to divert common mode (CM) currents, high Q shield-to-shield integrated low-inductance capacitor elements to compliment line-to-line filter capacitors and high Q baseplate integrated low-inductance capacitor elements to attenuate residual CM currents.
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