公开(公告)号：US10545108B2

公开(公告)日：2020-01-28

申请号：US15539999

申请日：2015-12-28

申请人： Robert Bosch GmbH ,  Ashwin K. Samarao ,  Gary O'Brien ,  Ando Feyh

发明人： Ashwin K. Samarao ,  Gary O'Brien ,  Ando Feyh

IPC分类号： G01N33/00 ,  G01N27/12 ,  H01L21/02

摘要： A thin film gas sensor device includes a substrate, a first pillar, a second pillar, a nanostructured thin film layer, and a first and a second electrical contact. The first and second pillars are supported by the substrate. The nanostructured thin film layer is formed with a semi-conductor material including holes. The semiconductor material is configured to undergo a reduction in a density of the holes in the presence of a target gas, thereby increasing an electrical resistance of the nanostructured thin film layer. The first and the second electrical contacts are operably connected to the nanostructured thin film layer, such that the increase in electrical resistance can be detected.

公开(公告)号：US10224540B2

公开(公告)日：2019-03-05

申请号：US14910695

申请日：2014-08-08

申请人： Ashwin K. Samarao ,  Gary O'Brien ,  Ando Feyh ,  Robert Bosch GmbH

发明人： Ashwin K. Samarao ,  Gary O'Brien ,  Ando Feyh

IPC分类号： H01M4/36 ,  H01M10/0525 ,  H01M10/0562 ,  C23C16/40 ,  C23C16/455 ,  C23C16/52 ,  H01M4/04 ,  H01M4/38 ,  H01M4/134 ,  H01M10/058 ,  C23C16/04 ,  H01M4/02

摘要： A Li-ion battery in one embodiment includes a lithium based compound in a cathode, a first porous silicon portion in an anode, and a layer of atomic layer deposited (ALD) alumina coating the first porous silicon portion and contacting the cathode.

公开(公告)号：US20160190564A1

公开(公告)日：2016-06-30

申请号：US14910695

申请日：2014-08-08

申请人： Ashwin K. SAMARAO ,  Gary O'BRIEN ,  Ando FEYH ,  ROBERT BOSCH GMBH

发明人： Ashwin K. Samarao ,  Gary O'Brien ,  Ando Feyh

IPC分类号： H01M4/36 ,  H01M4/38 ,  C23C16/40 ,  H01M4/04 ,  C23C16/455 ,  C23C16/52 ,  H01M10/0525 ,  H01M10/0562

CPC分类号： H01M4/366 ,  C23C16/045 ,  C23C16/403 ,  C23C16/45555 ,  C23C16/52 ,  H01M4/0428 ,  H01M4/134 ,  H01M4/382 ,  H01M4/386 ,  H01M10/0525 ,  H01M10/0562 ,  H01M10/058 ,  H01M2004/021 ,  H01M2220/20 ,  H01M2220/30 ,  H01M2300/0071 ,  H01M2300/0094 ,  Y02E60/122 ,  Y02T10/7011

摘要： A Li-ion battery in one embodiment includes a lithium based compound in a cathode, a first porous silicon portion in an anode, and a layer of atomic layer deposited (ALD) alumina coating the first porous silicon portion and contacting the cathode.

摘要翻译： 一个实施方案中的锂离子电池包括阴极中的锂基化合物，阳极中的第一多孔硅部分和涂覆第一多孔硅部分并与阴极接触的原子层沉积（ALD）氧化物层。

公开(公告)号：US20180011043A1

公开(公告)日：2018-01-11

申请号：US15539999

申请日：2015-12-28

申请人： Ashwin K. SAMARAO ,  Gary O'BRIEN ,  Ando FEYH ,  Robert Bosch GmbH

发明人： Ashwin K. Samarao ,  Gary O'Brien ,  Ando Feyh

IPC分类号： G01N27/12 ,  G01N33/00 ,  H01L21/02

CPC分类号： G01N27/127 ,  G01N33/004 ,  G01N33/0047 ,  H01L21/02565 ,  H01L21/02603 ,  H01L21/0262

摘要： A thin film gas sensor device includes a substrate, a first pillar, a second pillar, a nanostructured thin film layer, and a first and a second electrical contact. The first and second pillars are supported by the substrate. The nanostructured thin film layer is formed with a semi-conductor material including holes. The semiconductor material is configured to undergo a reduction in a density of the holes in the presence of a target gas, thereby increasing an electrical resistance of the nanostructured thin film layer. The first and the second electrical contacts are operably connected to the nanostructured thin film layer, such that the increase in electrical resistance can be detected.

公开(公告)号：US20170370865A1

公开(公告)日：2017-12-28

申请号：US15535362

申请日：2015-12-14

申请人： Gary O'BRIEN ,  Robert Bosch GmbH

发明人： Ashwin K. Samarao ,  Gary O'Brien

IPC分类号： G01N27/12 ,  G01N33/00 ,  C23C16/455

CPC分类号： G01N27/125 ,  C23C16/45525 ,  G01N27/127 ,  G01N33/004

摘要： A thin film gas sensor device includes a substrate, a first electrode supported by the substrate, a second electrode supported by the substrate, and a gas-sensitive structure. The gas-sensitive structure is supported by the substrate and is electrically connected to the first and second electrodes. The gas sensitive structure includes a plurality of thin film layers of a first material vertically interleaved with a plurality of thin film layers of a second material. The first and second materials are mutually catalytic materials.

公开(公告)号：US10571420B2

公开(公告)日：2020-02-25

申请号：US15535362

申请日：2015-12-14

申请人： Gary O'Brien ,  Robert Bosch GmbH

发明人： Ashwin K. Samarao ,  Gary O'Brien

IPC分类号： G01N27/12 ,  G01N21/77 ,  C23C16/455 ,  G01N33/00

摘要： A thin film gas sensor device includes a substrate, a first electrode supported by the substrate, a second electrode supported by the substrate, and a gas-sensitive structure. The gas-sensitive structure is supported by the substrate and is electrically connected to the first and second electrodes. The gas sensitive structure includes a plurality of thin film layers of a first material vertically interleaved with a plurality of thin film layers of a second material. The first and second materials are mutually catalytic materials.

公开(公告)号：US09274005B2

公开(公告)日：2016-03-01

申请号：US13970786

申请日：2013-08-20

申请人： Robert Bosch GmbH

发明人： Ashwin K. Samarao ,  Gary O'Brien

IPC分类号： G01J5/20 ,  G01J5/08

CPC分类号： G01J5/20 ,  G01J5/0853

摘要： A semiconductor sensor includes a substrate and an absorber. The substrate includes at least one reflective component. The absorber is spaced apart from the at least one reflective component by a distance. The absorber defines a plurality of openings each having a maximum width that is less than or equal to the distance.

摘要翻译： 半导体传感器包括基板和吸收体。 基板包括至少一个反射部件。 吸收器与至少一个反射部件隔开一段距离。 吸收器限定多个开口，每个开口具有小于或等于该距离的最大宽度。

公开(公告)号：US20140054462A1

公开(公告)日：2014-02-27

申请号：US13970786

申请日：2013-08-20

申请人： Robert Bosch GmbH

发明人： Ashwin K. Samarao ,  Gary O'Brien

IPC分类号： G01J5/20

CPC分类号： G01J5/20 ,  G01J5/0853

摘要： A semiconductor sensor includes a substrate and an absorber. The substrate includes at least one reflective component. The absorber is spaced apart from the at least one reflective component by a distance. The absorber defines a plurality of openings each having a maximum width that is less than or equal to the distance.

摘要翻译： 半导体传感器包括基板和吸收体。 基板包括至少一个反射部件。 吸收器与至少一个反射部件隔开一段距离。 吸收器限定多个开口，每个开口具有小于或等于该距离的最大宽度。

公开(公告)号：US09903763B2

公开(公告)日：2018-02-27

申请号：US15022601

申请日：2014-09-26

申请人： Robert Bosch GmbH

发明人： Ashwin K. Samarao ,  Gary O'Brien ,  Ando Feyh ,  Fabian Purkl ,  Gary Yama

IPC分类号： G01J5/20 ,  G01J5/02

CPC分类号： G01J5/20 ,  G01J5/024

摘要： A method for fabricating a semiconductor device includes patterning a sacrificial layer on a substrate to define a bolometer, with trenches being formed in the sacrificial layer to define anchors for the bolometer, the trenches extending through the sacrificial layer and exposing conductive elements at the bottom of the trenches. A thin titanium nitride layer is then deposited on the sacrificial layer and within the trenches. The titanium nitride layer is configured to form a structural support for the bolometer and to provide an electrical connection to the conductive elements on the substrate.

公开(公告)号：US09236522B2

公开(公告)日：2016-01-12

申请号：US14091550

申请日：2013-11-27

申请人： Robert Bosch GmbH

发明人： Ashwin K. Samarao ,  Gary O'Brien ,  Ando Feyh ,  Fabian Purkl ,  Gary Yama

IPC分类号： H01L31/0232 ,  H01L31/18 ,  G01J5/04 ,  G01J5/08 ,  G01J5/02 ,  G01J5/10 ,  G01J5/20

CPC分类号： H01L31/18 ,  G01J5/024 ,  G01J5/045 ,  G01J5/0815 ,  G01J5/0837 ,  G01J5/0856 ,  G01J5/10 ,  G01J5/20

摘要： A method of fabricating a semiconductor device includes forming an absorber on a substrate, and supporting a cap layer over the substrate to define a cavity between the substrate and the cap layer in which the absorber is located. The method further includes forming a lens layer on the cap layer. The lens layer is spaced apart from the cavity and defines a plurality of grooves and an opening located over the absorber.

摘要翻译： 制造半导体器件的方法包括在衬底上形成吸收体，并在衬底上支撑覆盖层以在衬底和吸收体所在的覆盖层之间限定空腔。 该方法还包括在盖层上形成透镜层。 透镜层与空腔间隔开并且限定多个凹槽和位于吸收体上方的开口。