公开(公告)号：US20170370865A1

公开(公告)日：2017-12-28

申请号：US15535362

申请日：2015-12-14

申请人： Gary O'BRIEN ,  Robert Bosch GmbH

发明人： Ashwin K. Samarao ,  Gary O'Brien

IPC分类号： G01N27/12 ,  G01N33/00 ,  C23C16/455

CPC分类号： G01N27/125 ,  C23C16/45525 ,  G01N27/127 ,  G01N33/004

摘要： A thin film gas sensor device includes a substrate, a first electrode supported by the substrate, a second electrode supported by the substrate, and a gas-sensitive structure. The gas-sensitive structure is supported by the substrate and is electrically connected to the first and second electrodes. The gas sensitive structure includes a plurality of thin film layers of a first material vertically interleaved with a plurality of thin film layers of a second material. The first and second materials are mutually catalytic materials.

公开(公告)号：US10545108B2

公开(公告)日：2020-01-28

申请号：US15539999

申请日：2015-12-28

申请人： Robert Bosch GmbH ,  Ashwin K. Samarao ,  Gary O'Brien ,  Ando Feyh

发明人： Ashwin K. Samarao ,  Gary O'Brien ,  Ando Feyh

IPC分类号： G01N33/00 ,  G01N27/12 ,  H01L21/02

摘要： A thin film gas sensor device includes a substrate, a first pillar, a second pillar, a nanostructured thin film layer, and a first and a second electrical contact. The first and second pillars are supported by the substrate. The nanostructured thin film layer is formed with a semi-conductor material including holes. The semiconductor material is configured to undergo a reduction in a density of the holes in the presence of a target gas, thereby increasing an electrical resistance of the nanostructured thin film layer. The first and the second electrical contacts are operably connected to the nanostructured thin film layer, such that the increase in electrical resistance can be detected.

公开(公告)号：US10060888B2

公开(公告)日：2018-08-28

申请号：US15535522

申请日：2015-12-16

申请人： ROBERT BOSCH GMBH ,  Ando Feyh ,  Gary O'Brien ,  Bongsang Kim ,  Jochen Stehle

发明人： Ando Feyh ,  Gary O'Brien ,  Bongsang Kim ,  Jochen Stehle

IPC分类号： G01N30/60 ,  G01N30/02 ,  B81C1/00 ,  B81B1/00

CPC分类号： G01N30/6095 ,  B81B1/002 ,  B81C1/00119 ,  G01N30/60 ,  G01N2030/025

摘要： A micro gas chromatograph includes one or more separator columns formed within a device layer. The separator columns have small channel cross sections and long channel lengths with atomic-smooth channel sidewalls enabling a high channel packaging density, multiple channels positioned on top of each other, and channel segments that are thermally decoupled from the substrates. The micro gas-chromatograph also enables electrostatic and thermal actuators to be positioned in close proximity to the separator columns such that the material passing through the columns is one or more of locally heated, locally cooled, and electrically biased.

公开(公告)号：US20170363588A1

公开(公告)日：2017-12-21

申请号：US15535522

申请日：2015-12-16

申请人： Ando FEYN ,  Gary O'BRIEN ,  Bongsang KIM ,  Jochen STEHLE ,  Robert Bosch GmbH

发明人： Ando Feyh ,  Gary O'Brien ,  Bongsang Kim ,  Jochen Stehle

IPC分类号： G01N30/60 ,  B81B1/00 ,  B81C1/00 ,  G01N30/02

CPC分类号： G01N30/6095 ,  B81B1/002 ,  B81B7/00 ,  B81C1/00 ,  B81C1/00023 ,  B81C1/00119 ,  G01N30/60 ,  G01N2030/025

摘要： A micro gas chromatograph includes one or more separator columns formed within a device layer. The separator columns have small channel cross sections and long channel lengths with atomic-smooth channel sidewalls enabling a high channel packaging density, multiple channels positioned on top of each other, and channel segments that are thermally decoupled from the substrates. The micro gas-chromatograph also enables electrostatic and thermal actuators to be positioned in close proximity to the separator columns such that the material passing through the columns is one or more of locally heated, locally cooled, and electrically biased.

公开(公告)号：US20160327392A1

公开(公告)日：2016-11-10

申请号：US15108414

申请日：2014-12-30

申请人： Bonsang Kim ,  Ando Feyh ,  Andrew Graham ,  Gary O'Brien ,  Michael Baus ,  Ralf Maier ,  Mariusz Koc ,  Robert Bosch GmbH

发明人： Bonsang Kim ,  Ando Feyh ,  Andrew Graham ,  Gary O'Brien ,  Michael Baus ,  Ralf Maier ,  Mariusz Koc

IPC分类号： G01C19/5769

CPC分类号： G01C19/5769 ,  B81B7/0016 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2207/012 ,  G01P1/003 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/084 ,  G01P2015/0882 ,  H01L2224/48137 ,  H01L2924/16152

摘要： In one embodiment, a sensor includes a rigid wafer outer body, a first cavity located within the rigid wafer outer body, a first spring supported by the rigid wafer outer body and extending into the first cavity, a second spring supported by the rigid wafer outer body and extending into the first cavity, and a first sensor structure supported by the first spring and the second spring within the first cavity.

摘要翻译： 在一个实施例中，传感器包括刚性晶片外部主体，位于刚性晶片外部主体内的第一腔体，由刚性晶片外部主体支撑并延伸到第一腔体中的第一弹簧，由刚性晶片外部支撑的第二弹簧 并且延伸到第一腔体中，以及由第一弹簧和第二弹簧支撑在第一腔内的第一传感器结构。

公开(公告)号：US10717645B2

公开(公告)日：2020-07-21

申请号：US15535687

申请日：2015-12-17

申请人： Robert Bosch GmbH ,  Ando Feyh ,  Gary O'Brien

发明人： Ando Feyh ,  Gary O'Brien

IPC分类号： H01L31/02 ,  H01L27/146 ,  H01L21/56 ,  B81C1/00 ,  H01L23/28 ,  H01L23/31 ,  H01L23/24 ,  G01L19/14 ,  G01L19/00 ,  B81B7/00

摘要： A method of encapsulating a sensor device includes providing at least one sensor device that has a sensor portion on a substrate. An exclusionary zone is formed above an upper surface of the sensor portion. An outer boundary is formed on or about the sensor device with the outer boundary encircling the exclusionary zone. A mold material is deposited into a volume defined in part by the sensor device, the exclusionary zone, and the outer boundary to encapsulate portions of the sensor device. The exclusionary zone in one embodiment is an inner boundary that is formed on the sensor portion. The inner boundary encircles a portion of the upper surface of the sensor portion. The exclusionary zone in another embodiment is a selectively removable material deposited on the upper surface of the sensor portion. The selectively removable material occupies a space above a portion of the upper surface.

公开(公告)号：US10224540B2

公开(公告)日：2019-03-05

申请号：US14910695

申请日：2014-08-08

申请人： Ashwin K. Samarao ,  Gary O'Brien ,  Ando Feyh ,  Robert Bosch GmbH

发明人： Ashwin K. Samarao ,  Gary O'Brien ,  Ando Feyh

IPC分类号： H01M4/36 ,  H01M10/0525 ,  H01M10/0562 ,  C23C16/40 ,  C23C16/455 ,  C23C16/52 ,  H01M4/04 ,  H01M4/38 ,  H01M4/134 ,  H01M10/058 ,  C23C16/04 ,  H01M4/02

摘要： A Li-ion battery in one embodiment includes a lithium based compound in a cathode, a first porous silicon portion in an anode, and a layer of atomic layer deposited (ALD) alumina coating the first porous silicon portion and contacting the cathode.

公开(公告)号：US20160190564A1

公开(公告)日：2016-06-30

申请号：US14910695

申请日：2014-08-08

申请人： Ashwin K. SAMARAO ,  Gary O'BRIEN ,  Ando FEYH ,  ROBERT BOSCH GMBH

发明人： Ashwin K. Samarao ,  Gary O'Brien ,  Ando Feyh

IPC分类号： H01M4/36 ,  H01M4/38 ,  C23C16/40 ,  H01M4/04 ,  C23C16/455 ,  C23C16/52 ,  H01M10/0525 ,  H01M10/0562

CPC分类号： H01M4/366 ,  C23C16/045 ,  C23C16/403 ,  C23C16/45555 ,  C23C16/52 ,  H01M4/0428 ,  H01M4/134 ,  H01M4/382 ,  H01M4/386 ,  H01M10/0525 ,  H01M10/0562 ,  H01M10/058 ,  H01M2004/021 ,  H01M2220/20 ,  H01M2220/30 ,  H01M2300/0071 ,  H01M2300/0094 ,  Y02E60/122 ,  Y02T10/7011

摘要： A Li-ion battery in one embodiment includes a lithium based compound in a cathode, a first porous silicon portion in an anode, and a layer of atomic layer deposited (ALD) alumina coating the first porous silicon portion and contacting the cathode.

摘要翻译： 一个实施方案中的锂离子电池包括阴极中的锂基化合物，阳极中的第一多孔硅部分和涂覆第一多孔硅部分并与阴极接触的原子层沉积（ALD）氧化物层。

公开(公告)号：US10571420B2

公开(公告)日：2020-02-25

申请号：US15535362

申请日：2015-12-14

申请人： Gary O'Brien ,  Robert Bosch GmbH

发明人： Ashwin K. Samarao ,  Gary O'Brien

IPC分类号： G01N27/12 ,  G01N21/77 ,  C23C16/455 ,  G01N33/00

摘要： A thin film gas sensor device includes a substrate, a first electrode supported by the substrate, a second electrode supported by the substrate, and a gas-sensitive structure. The gas-sensitive structure is supported by the substrate and is electrically connected to the first and second electrodes. The gas sensitive structure includes a plurality of thin film layers of a first material vertically interleaved with a plurality of thin film layers of a second material. The first and second materials are mutually catalytic materials.

公开(公告)号：US20170314995A1

公开(公告)日：2017-11-02

申请号：US15516821

申请日：2015-10-09

申请人： Thomas ROCZNIK ,  Fabian PURKL ,  Gary O'BRIEN ,  Ando FEYH ,  Bongsang KIM ,  Ashwin SAMARAO ,  Gary YAMA ,  Robert Bosch GmbH

发明人： Thomas Rocznik ,  Fabian Purkl ,  Gary O'Brien ,  Ando Feyh ,  Bongsang Kim ,  Ashwin Samarao ,  Gary Yama

IPC分类号： G01J5/06 ,  G01J5/08 ,  G01J5/24

CPC分类号： G01J5/06 ,  G01J5/0809 ,  G01J5/0853 ,  G01J5/20 ,  G01J5/24 ,  G01J2005/066 ,  G01J2005/067

摘要： A semiconductor sensor system, in particular a bolometer, includes a substrate, an electrode supported by the substrate, an absorber spaced apart from the substrate, a voltage source, and a current source. The electrode can include a mirror, or the system may include a mirror separate from the electrode. Radiation absorption efficiency of the absorber is based on a minimum gap distance between the absorber and mirror. The current source applies a DC current across the absorber structure to produce a signal indicative of radiation absorbed by the absorber structure. The voltage source powers the electrode to produce a modulated electrostatic field acting on the absorber to modulate the minimum gap distance. The electrostatic field includes a DC component to adjust the absorption efficiency, and an AC component that cyclically drives the absorber to negatively interfere with noise in the signal.