摘要:
It is aimed to provide a photoelectric conversion device having high adhesion between a light-absorbing layer and an electrode layer as well as high photoelectric conversion efficiency. In order to achieve this object, the photoelectric conversion device includes a first layer and a second layer provided on the first layer. Further, in the photoelectric conversion device, the first layer includes an electrode layer, the second layer includes a light-absorbing layer including a group I-III-VI compound semiconductor, the light-absorbing layer includes a first region and a second region located farther from the first layer than the first region, and an average grain diameter of crystal grains in the second region is larger than an average grain diameter of crystal grains in the first region.
摘要:
The object is to improve the conversion efficiency of a photoelectric conversion device. This object can be achieved by a photoelectric conversion device including an electrode and a semiconductor layer which is provided on one main surface of the electrode and contains a I-III-VI group compound semiconductor, wherein the semiconductor layer includes a connection layer that is located at a position on the one main surface side of the electrode and has a tendency that, the closer to the one main surface, the greater a quotient obtained by dividing an amount of substance of a I-B group element by an amount of substance of a III-B group element becomes.
摘要:
The object is to improve the conversion efficiency of a photoelectric conversion device. This object can be achieved by a photoelectric conversion device including an electrode and a semiconductor layer which is provided on one main surface of the electrode and contains a I-III-VI group compound semiconductor, wherein the semiconductor layer includes a connection layer that is located at a position on the one main surface side of the electrode and has a tendency that, the closer to the one main surface, the greater a quotient obtained by dividing an amount of substance of a I-B group element by an amount of substance of a III-B group element becomes.
摘要:
A photoelectric conversion device and a method for producing a photoelectric conversion device are disclosed. The photoelectric conversion device includes a light-absorbing layer. The light-absorbing layer contains a chalcopyrite-based compound, and has a peak intensity ratio IB/IA in a range of 3 to 9, where IA represents a peak intensity of the peak formed by combining a peak of a (220) plane and a peak of a (204) plane in X-ray diffraction, and IB represents a peak intensity of a (112) plane.
摘要:
It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer contains a compound semiconductor. The light absorbing layer comprises a first layer close to the electrode layer and a second layer located on the first layer. The first layer has a void ratio lower than that of the second layer.
摘要:
It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer contains a compound semiconductor. The light absorbing layer comprises a first layer close to the electrode layer and a second layer located on the first layer. The first layer has a void ratio lower than that of the second layer.
摘要:
A photoelectric converter is disclosed. The photoelectric converter includes a light-absorbing layer. The light-absorbing layer includes a plurality of crystalline grains. The grains contain a Group I-III-VI chalcopyrite compound semiconductor. The light-absorbing layer contains oxygen and an average atomic concentration of oxygen at grain boundaries of the light-absorbing layer is larger than the average atomic concentration of oxygen in the grains of the light-absorbing layer.
摘要:
Objects of the present invention is to provide a quadrupole mass filter that can be fabricated at low cost and has a high transmission efficiency even under a high pressure (0.5 mTorr or more), and to provide a mass spectrometer or mass spectrometry method that reduces crosstalk in a wide mass range. Now, in a mass spectrometer, an ion separating unit is configured to include quadrupole rod electrodes that form a quadrupole radio-frequency electric field, electrodes that form a quadrupole electrostatic field, and a power supply that allows the voltage of the electrodes to form a quadrupole electrostatic field to change. In a collision cell configured to perform collision induced dissociation, harmonic potentials in a plurality of stages are produced to resonance excite ions in the axial direction, so that the ions obtain kinetic energy to move in the direction of the detector. This energy allows a time period to shorten for which ions stay in the collision cell.
摘要:
Detection sensitivity is improved by increasing the amount of light of beams that irradiate a sample cell without causing saturation of a detector with ultraviolet beams or visible beams. This spectrophotometer includes a sample cell, which stores a sample to be measured, a visible light source and an ultraviolet light source each for supplying an incident beam that enters the sample, a spectroscope, which disperses a beam that has passed through the sample, an optical detector, which detects beams dispersed from such beam (spectrum), and a dichroic element which reflects or transmits ultraviolet beams from the ultraviolet light source and which transmits or reflects visible beams from the visible light source. Optics are configured such that ultraviolet beams and visible beams that have passed through or have been reflected by the dichroic element enter the sample cell.
摘要:
It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion device according to the present invention uses a polycrystalline semiconductor layer including a plurality of semiconductor particles coupled together as a light-absorbing layer, each of the semiconductor particles including a group I-III-VI compound, each of the semiconductor particles having a higher composition ratio PI of a group I-B element to a group III-B element in a surface portion thereof than that in a central portion thereof.