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    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11380791B2

    公开(公告)日：2022-07-05

    申请号：US16225122

    申请日：2018-12-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyun-Seung Song ,  Hyo-Jin Kim ,  Kyoung-Mi Park ,  Hwi-Chan Jun ,  Seung-Seok Ha

    IPC: H01L29/78 ,  H01L29/08 ,  H01L29/66 ,  H01L29/423 ,  H01L29/417

    Abstract: A semiconductor device includes a first impurity region, a channel pattern, a second impurity region, a gate structure, a first contact pattern, a second contact pattern and a spacer. The first impurity region may be formed on a substrate. The channel pattern may protrude from an upper surface of the substrate. The second impurity region may be formed on the channel pattern. The gate structure may be formed on a sidewall of the channel pattern and the substrate adjacent to the channel pattern, and the gate structure may include a gate insulation pattern and a gate electrode. The first contact pattern may contact an upper surface of the second impurity region. The second contact pattern may contact a surface of the gate electrode. The spacer may be formed between the first and second contact patterns. The spacer may surround a portion of a sidewall of the second contact pattern, and the spacer may contact a sidewall of each of the first and second contact patterns.

    DISPLAY DEVICE AND MOBILE ELECTRONIC APPARATUS INCLUDING THE SAME
    6.
    发明申请
    DISPLAY DEVICE AND MOBILE ELECTRONIC APPARATUS INCLUDING THE SAME 有权
    显示设备和移动电子设备，包括它们

    公开(公告)号：US20150325213A1

    公开(公告)日：2015-11-12

    申请号：US14615097

    申请日：2015-02-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seung-Gun Lee ,  Hyo-Jin Kim ,  Hak-Seong Lee

    IPC: G09G5/18

    CPC classification number: G09G3/2096 ,  G09G3/3208 ,  G09G5/008 ,  G09G5/18 ,  G09G2300/0426 ,  G09G2310/0243 ,  G09G2370/10

    Abstract: A mobile device includes a display driver integrated circuit (DDI), a display panel, and an application processor. The DDI provides an internal synchronization signal based on an internal clock signal as a synchronization signal. The application processor calculates a time offset corresponding to a difference between a real time and the internal synchronization signal, and provides the time offset to the DDI. The DDI calculates a time to be displayed based on the time offset and a current time provided from the application processor, and displays the time to be displayed in the display panel in a self clock display mode.

    Abstract translation: 移动设备包括显示驱动器集成电路（DDI），显示面板和应用处理器。 DDI提供基于内部时钟信号作为同步信号的内部同步信号。 应用处理器计算与实时和内部同步信号之间的差相对应的时间偏移量，并向DDI提供时间偏移量。 DDI基于从应用处理器提供的时间偏移和当前时间计算要显示的时间，并且以自时钟显示模式显示要在显示面板中显示的时间。

    Semiconductor device having spacer between contract patterns
    7.
    发明授权
    Semiconductor device having spacer between contract patterns 有权

    公开(公告)号：US12249648B2

    公开(公告)日：2025-03-11

    申请号：US17857608

    申请日：2022-07-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyun-Seung Song ,  Hyo-Jin Kim ,  Kyoung-Mi Park ,  Hwi-Chan Jun ,  Seung-Seok Ha

    IPC: H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

    Abstract: A semiconductor device includes a first impurity region on a substrate; a channel pattern protruding from an upper surface of the substrate, the channel pattern extending in a first direction substantially parallel to the upper surface of the substrate; a second impurity region on the channel pattern, the second impurity region covering an entire upper surface of the channel pattern; a gate structure on a sidewall of the channel pattern and the substrate adjacent to the channel pattern; a first contact pattern on the second impurity region; a second contact pattern that is electrically connected to the gate structure; and a spacer between the first contact pattern and the second contact pattern. The spacer completely surrounds the second contact pattern in plan view, and the first contact pattern partially surrounds the second contact pattern in plan view.

    Semiconductor memory device
    8.
    发明授权
    Semiconductor memory device 有权

    公开(公告)号：US10957373B2

    公开(公告)日：2021-03-23

    申请号：US16428184

    申请日：2019-05-31

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Keun Hwi Cho ,  Seunghan Park ,  Hyo-Jin Kim ,  Gukil An

    IPC: G11C11/22 ,  H01L29/51 ,  H01L27/11502

    Abstract: A semiconductor memory device includes a memory cell array including memory cells, a row decoder connected to the memory cell array through first conductive lines, write drivers and sense amplifiers connected to the memory cell array through second conductive lines, a voltage generator that supplies a first voltage to the row decoder and supplies a second voltage to the write drivers and sense amplifiers, and a data buffer that is connected to the write drivers and sense amplifiers and transfers data between the write drivers and sense amplifiers and an external device. At least one of the row decoder, the write drivers and sense amplifiers, the voltage generator, and the data buffer includes a first ferroelectric capacitor to amplify a voltage.

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