公开(公告)号：US20160099052A1

公开(公告)日：2016-04-07

申请号：US14724909

申请日：2015-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-kyu LEE ,  Yeong-taek LEE ,  Dae-seok BYEON ,  In-gyu BAEK ,  Man CHANG ,  Lijie ZHANG

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C7/04 ,  G11C11/1659 ,  G11C11/1675 ,  G11C13/0097 ,  G11C2013/0073 ,  G11C2013/0088 ,  G11C2013/0092

Abstract: A method for operating a memory device includes sensing a temperature of the resistive memory device, setting a level of a set voltage or current for writing to a memory cell based on the temperature, setting a level of a reset voltage for reset writing to the memory cell based on the temperature, and performing a write operation on the memory cell based on the level of the set voltage or current and the level of the reset voltage. The memory device may be a resistive memory device.

Abstract translation: 一种用于操作存储器件的方法包括：感测电阻性存储器件的温度，根据温度设置用于写入存储器单元的设定电压或电流的电平，设置用于复位写入的复位电压的电平到存储器 基于温度，并且基于设定电压或电流的电平以及复位电压的电平对存储器单元执行写入操作。 存储器件可以是电阻式存储器件。

公开(公告)号：US20160099049A1

公开(公告)日：2016-04-07

申请号：US14796131

申请日：2015-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-kyu LEE ,  Yeong-taek LEE ,  Dae-seok BYEON ,  In-gyu BAEK ,  Man CHANG ,  Lijie ZHANG ,  Hyun-kook PARK

IPC: G11C13/00 ,  G11C11/56

CPC classification number: G11C13/004 ,  G11C7/04 ,  G11C11/1673 ,  G11C11/5607 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/0064 ,  G11C2013/0054

Abstract: A method for operating a memory device includes sensing a change in temperature of the memory device, adjusting a level of a reference current for a read operation, and reading data from memory cells of the memory device based on the adjusted level of the reference current. The level of the reference current is adjusted from a reference value to a first value when the temperature of the memory device increases and is adjusted from the reference value to a second value when the temperature of the memory device decreases. A difference between the reference value and the first value is different from a difference the reference value and the second value.

Abstract translation: 用于操作存储器件的方法包括：检测存储器件的温度变化，调整读取操作的参考电流的电平，以及基于调节的参考电流的电平从存储器件的存储器单元读取数据。 当存储器件的温度升高时，将参考电流的电平从参考值调整到第一值，并且当存储器件的温度降低时，将参考电流的电平从参考值调整到第二值。 参考值和第一值之间的差异与参考值和第二值的差异不同。

公开(公告)号：US20180211996A1

公开(公告)日：2018-07-26

申请号：US15925043

申请日：2018-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-kyu LEE ,  Gwan-hyeob Koh ,  Hong-kook Min

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L27/20

CPC classification number: H01L27/228 ,  H01L27/20 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10

Abstract: A semiconductor apparatus includes a substrate, a first insulating layer on a logic region and a memory region of the substrate, a second insulating layer on the first insulating layer, a base insulating layer between the first insulating layer and second insulating layer over the logic region and the memory region, first interconnection structures passing the first insulating layer, second interconnection structures passing through the second insulating layer, a base interconnection structure passing through the base insulating layer over the logic region, and a variable resistance structure in the base insulating layer over the memory region. The variable resistance structure includes a lower electrode, a magnetoresistive device, and an upper electrode, which are sequentially stacked. The lower electrode and the upper electrode are electrically connected to one of the first interconnection structures and one of the second interconnection structures, respectively, over the memory region.