公开(公告)号：US11869877B2

公开(公告)日：2024-01-09

申请号：US17396291

申请日：2021-08-06

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Lin Hou ,  Peter Rabkin ,  Yangyin Chen ,  Masaaki Higashitani

IPC: H01L23/32 ,  H01L25/065 ,  H01L23/48 ,  H01L23/00 ,  H01L21/768 ,  H01L25/00

CPC classification number: H01L25/0657 ,  H01L21/76898 ,  H01L23/32 ,  H01L23/481 ,  H01L24/19 ,  H01L24/20 ,  H01L24/73 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/2101 ,  H01L2224/32146 ,  H01L2224/73267 ,  H01L2224/83896 ,  H01L2225/06541 ,  H01L2924/37001

Abstract: A bonded assembly includes a first semiconductor die and a second semiconductor die that are bonded to each other by dielectric-to-dielectric bonding. First conductive via structures vertically extend through the second semiconductor die and a respective subset of the first dielectric material layers in the first semiconductor die, and contact a respective first metal interconnect structure in the first semiconductor die. Second conductive via structures vertically extend through a second substrate and a respective subset of the second dielectric material layers in the second semiconductor die, and contacting a respective second metal interconnect structure in the second semiconductor die. Redistribution metal interconnect structures located over a backside surface of the second substrate electrically connect the first conductive via structures and the second conductive via structures, and provide electrical interconnection between the first semiconductor die and the second semiconductor die.

公开(公告)号：US12125814B2

公开(公告)日：2024-10-22

申请号：US17667238

申请日：2022-02-08

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Lin Hou ,  Peter Rabkin ,  Masaaki Higashitani

IPC: H01L23/00 ,  H01L25/065

CPC classification number: H01L24/09 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/29 ,  H01L24/32 ,  H01L24/80 ,  H01L25/0652 ,  H01L25/0657 ,  H01L2224/05007 ,  H01L2224/05073 ,  H01L2224/05565 ,  H01L2224/05573 ,  H01L2224/0603 ,  H01L2224/06131 ,  H01L2224/0801 ,  H01L2224/08147 ,  H01L2224/0903 ,  H01L2224/0913 ,  H01L2224/29187 ,  H01L2224/29188 ,  H01L2224/29575 ,  H01L2224/29687 ,  H01L2224/32145 ,  H01L2224/80895 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/1431 ,  H01L2924/1438

Abstract: A bonded assembly of a primary semiconductor die and a complementary semiconductor die includes first pairs of first primary bonding pads and first complementary bonding pads that are larger in area than the first primary bonding pads, and second pairs of second primary bonding pads and second complementary bonding pads that are smaller in area than the second primary bonding pads.

公开(公告)号：US11646283B2

公开(公告)日：2023-05-09

申请号：US17357120

申请日：2021-06-24

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Lin Hou ,  Peter Rabkin ,  Masaaki Higashitani ,  Ramy Nashed Bassely Said

IPC: H01L23/00

CPC classification number: H01L24/08 ,  H01L24/03 ,  H01L24/05 ,  H01L24/80 ,  H01L2224/036 ,  H01L2224/05073 ,  H01L2224/05561 ,  H01L2224/08145 ,  H01L2224/80895

Abstract: A first metal layer can be deposited over first dielectric material layers of a first substrate, and can be patterned into first bonding pads. A first low-k material layer can be formed over the first bonding pads. The first low-k material layer includes a low-k dielectric material such as a MOF dielectric material or organosilicate glass. A second semiconductor die including second bonding pads can be provided. The first bonding pads are bonded to the second bonding pads to form a bonded assembly.

公开(公告)号：US11562975B2

公开(公告)日：2023-01-24

申请号：US17244387

申请日：2021-04-29

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Lin Hou ,  Peter Rabkin ,  Masaaki Higashitani

IPC: H01L25/065 ,  H01L23/00 ,  H01L25/18 ,  H01L25/00

Abstract: A bonded assembly of a first semiconductor die and a second semiconductor die includes first and second semiconductor dies. The first semiconductor die includes first semiconductor devices, first metal interconnect structures embedded in first dielectric material layers, and first metal bonding pads laterally surrounded by a semiconductor material layer. The second semiconductor die includes second semiconductor devices, second metal interconnect structures embedded in second dielectric material layers, and second metal bonding pads that include primary metal bonding pads and auxiliary metal bonding pads. The auxiliary metal bonding pads are bonded to the semiconductor material layer through metal-semiconductor compound portions formed by reaction of surface portions of the semiconductor material layer and an auxiliary metal bonding pad. The primary metal bonding pads are bonded to the first metal bonding pads by metal-to-metal bonding.

公开(公告)号：US11424215B2

公开(公告)日：2022-08-23

申请号：US17094543

申请日：2020-11-10

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Lin Hou ,  Peter Rabkin ,  Yangyin Chen ,  Masaaki Higashitani

IPC: H01L23/00 ,  H01L25/00 ,  H01L27/11582 ,  H01L21/50 ,  H01L23/532 ,  H01L27/11556 ,  H01L21/60

Abstract: A nucleation suppression layer including a self-assembly material can be formed on a surface of a bonding dielectric layer without depositing the self-assembly material on physically exposed surfaces of first metal bonding pads of a first semiconductor die. Metallic liners including a second metal can be formed on the physically exposed surfaces of the metal bonding pads without depositing the second metal on the nucleation suppression layer. The first semiconductor die is bonded to a second semiconductor die by inducing metal-to-metal bonding between mating pairs of the first metal bonding pads and second metal bonding pads of the second semiconductor die.

公开(公告)号：US11348901B1

公开(公告)日：2022-05-31

申请号：US17106884

申请日：2020-11-30

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Lin Hou ,  Peter Rabkin ,  Yangyin Chen ,  Masaaki Higashitani

IPC: H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  H01L25/18

Abstract: A first bonding unit is provided, which includes a first substrate, a first passivation dielectric layer, and first bonding pads. A second bonding unit is provided, which includes a second substrate, a second passivation dielectric layer, and second bonding pads including bonding pillar structures. Solder material portions are formed on physically exposed surfaces of the first bonding pads. The second bonding unit is attached to the first bonding unit by bonding the at least one of the bonding pillar structures to a respective solder material portion.

公开(公告)号：US11948902B2

公开(公告)日：2024-04-02

申请号：US17370317

申请日：2021-07-08

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Lin Hou ,  Peter Rabkin ,  Adarsh Rajashekhar ,  Raghuveer S. Makala ,  Masaaki Higashitani

IPC: H01L23/00

CPC classification number: H01L24/08 ,  H01L24/03 ,  H01L2224/0225 ,  H01L2224/02255 ,  H01L2224/0226 ,  H01L2224/03452 ,  H01L2224/03614 ,  H01L2224/08146 ,  H01L2924/1431 ,  H01L2924/1438

Abstract: A bonded assembly includes a first semiconductor die containing a first substrate, first semiconductor devices, and first bonding pads laterally surrounded by a first pad-level dielectric layer. The first pad-level dielectric layer includes at least one first encapsulated airgap located between neighboring pairs of first bonding pads and encapsulated by a first dielectric fill material of the first pad-level dielectric layer. The bonded assembly includes a second semiconductor die containing a second substrate, second semiconductor devices, and second bonding pads laterally surrounded by a second pad-level dielectric layer. Each of the second bonding pads is bonded to a respective one of the first bonding pads.

公开(公告)号：US20230042438A1

公开(公告)日：2023-02-09

申请号：US17396291

申请日：2021-08-06

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Lin Hou ,  Peter Rabkin ,  Yangyin Chen ,  Masaaki Higashitani

IPC: H01L25/065 ,  H01L23/32 ,  H01L23/48 ,  H01L23/00 ,  H01L21/768 ,  H01L25/00

Abstract: A bonded assembly includes a first semiconductor die and a second semiconductor die that are bonded to each other by dielectric-to-dielectric bonding. First conductive via structures vertically extend through the second semiconductor die and a respective subset of the first dielectric material layers in the first semiconductor die, and contact a respective first metal interconnect structure in the first semiconductor die. Second conductive via structures vertically extend through a second substrate and a respective subset of the second dielectric material layers in the second semiconductor die, and contacting a respective second metal interconnect structure in the second semiconductor die. Redistribution metal interconnect structures located over a backside surface of the second substrate electrically connect the first conductive via structures and the second conductive via structures, and provide electrical interconnection between the first semiconductor die and the second semiconductor die.

公开(公告)号：US11646282B2

公开(公告)日：2023-05-09

申请号：US17167161

申请日：2021-02-04

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Lin Hou ,  Peter Rabkin ,  Masaaki Higashitani

IPC: H01L23/48 ,  H01L23/00 ,  H01L25/18 ,  H01L25/00 ,  H01L25/065

CPC classification number: H01L24/08 ,  H01L24/05 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/05082 ,  H01L2224/05101 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05163 ,  H01L2224/08145 ,  H01L2224/80031 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/1431 ,  H01L2924/14511

Abstract: A bonded assembly includes a first semiconductor die and a second semiconductor die. The first semiconductor die includes first metallic bonding pads embedded in first dielectric material layers, the second semiconductor die includes second metallic bonding pads embedded in second dielectric material layers, the first metallic bonding pads are bonded to a respective one of the second metallic bonding pads; and each of the first metallic bonding pads includes a corrosion barrier layer containing an alloy of a primary bonding metal and at least one corrosion-suppressing element that is different from the primary bonding metal.