公开(公告)号：US20220108868A1

公开(公告)日：2022-04-07

申请号：US17489989

申请日：2021-09-30

Applicant: SEMES CO., LTD.

Inventor： Duk Hyun SON ,  Yu Ri SON

IPC: H01J37/244 ,  H01J37/32 ,  G01N15/06

Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a load lock chamber, of which a pressure of an interior space is changed between a first pressure and a second pressure that is lower than the first pressure, an index chamber connected to the load lock chamber, and a measurement unit that measures a level of particles in the interior space, and the measurement unit is located outside the load lock chamber.

公开(公告)号：US20240203776A1

公开(公告)日：2024-06-20

申请号：US18189285

申请日：2023-03-24

Applicant: SEMES CO., LTD.

Inventor： Duk Hyun SON

IPC: H01L21/677 ,  B25J11/00 ,  B25J15/00 ,  B25J15/06 ,  H01L21/687

CPC classification number: H01L21/67766 ,  B25J11/0095 ,  B25J15/0014 ,  B25J15/0616 ,  H01L21/67742 ,  H01L21/68707

Abstract: Provided are a transfer unit and a substrate treatment apparatus which can stably vacuum-adsorb a substrate and can be used for a long time. The transfer unit includes: a robot arm; and an end effector connected to the robot arm, wherein the end effector includes: a body; a vacuum hole formed in the body; and a pad installed on the body to surround the vacuum hole and including a first pad layer and a second pad layer stacked sequentially, wherein the first pad layer has greater elasticity than the second pad layer, and the second pad layer has greater hardness than the first pad layer.

公开(公告)号：US20220093374A1

公开(公告)日：2022-03-24

申请号：US17477708

申请日：2021-09-17

Applicant: SEMES CO., LTD.

Inventor： Duk Hyun SON

IPC: H01J37/32 ,  H01J37/21 ,  B25J15/00 ,  B25J11/00 ,  H01L21/67

Abstract: An apparatus for treating a substrate includes a process chamber that treats the substrate, a buffer module that accommodates a ring member to be transported into the process chamber, and a load-lock chamber having an inner space. The buffer module includes a buffer chamber having a buffer space in which the ring member is accommodated, a support shelf that supports the ring member in the buffer space, and a drive member that moves the support shelf.

公开(公告)号：US20230317427A1

公开(公告)日：2023-10-05

申请号：US18097728

申请日：2023-01-17

Applicant: SEMES CO., LTD.

Inventor： Duk Hyun SON ,  Dong Mok LEE ,  Hyung Joon KIM

IPC: H01J37/32 ,  H01F7/20 ,  H01F7/02 ,  H01L21/683

CPC classification number: H01J37/32669 ,  H01F7/02 ,  H01F7/20 ,  H01J37/3211 ,  H01L21/6831 ,  H01F27/28 ,  H01J37/32155 ,  H01J2237/2007 ,  H01J2237/24564 ,  H01J2237/334

Abstract: A plasma processing apparatus using a magnetic field includes a reaction chamber, a plasma generating device connected to the reaction chamber to generate plasma in the reaction chamber, a substrate support disposed in a lower portion in the reaction chamber to support a wafer to be etched by the plasma, and a magnetic module including a permanent magnet and an electromagnet disposed vertically above the reaction chamber and a DC power supply unit connected to the electromagnet to input power to the electromagnet.

公开(公告)号：US20230197492A1

公开(公告)日：2023-06-22

申请号：US18083558

申请日：2022-12-18

Applicant: SEMES CO., LTD.

Inventor： Duk Hyun SON ,  Je Hee LEE

IPC: H01L21/677 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/67742 ,  H01L21/68707 ,  H01L21/67196

Abstract: A substrate transfer module, which provides clean environment to prevent particles from moving to a substrate, and semiconductor manufacturing equipment including the same. The substrate transfer module of the semiconductor manufacturing equipment includes a transfer chamber providing a transfer space of the substrate, having a chamber groove lowered by a predetermined height from a bottom surface to form a gap with respect to the bottom surface, a guide member provided in an inside portion of the transfer chamber, and a substrate transfer robot configured to move along the guide member and to transfer the substrate.

公开(公告)号：US20250149312A1

公开(公告)日：2025-05-08

申请号：US18939452

申请日：2024-11-06

Applicant: SEMES CO., LTD.

Inventor： Tae Sung KIM ,  Duk Hyun SON

IPC: H01J37/32 ,  G05D7/06 ,  H01L21/683

Abstract: Disclosed are a substrate processing apparatus including a fluid supply unit and a fluid control method for controlling a flow rate of fluid. The fluid control method for controlling a flow rate of fluid to be supplied to a lower surface of a substrate from a fluid supply unit including a fluid source for supplying fluid and fluid supply lines connected to the fluid source includes a dimension measurement step of measuring lengths and cross-sectional areas of the fluid supply lines, a volume calculation step of calculating volumes of the fluid supply lines using the lengths and the cross-sectional areas measured in the dimension measurement step, a time measurement step of opening a valve provided in the fluid source to measure a time for which fluid is supplied to the fluid supply lines, and a control step of controlling a flow rate of fluid based on data obtained in the previous steps.

公开(公告)号：US20250029851A1

公开(公告)日：2025-01-23

申请号：US18607481

申请日：2024-03-17

Applicant: SEMES CO., LTD.

Inventor： Tae Sung KIM ,  Duk Hyun SON ,  Kwang Pyo LEE

IPC: H01L21/67 ,  B08B9/032

Abstract: Proposed are a substrate processing system and a process gas supply control verification method and, more particularly, to a technology to verify the operation of a mass flow controller (MFC) that supplies a process gas for semiconductor processing at an appropriate flow rate according to a recipe.

公开(公告)号：US20240203696A1

公开(公告)日：2024-06-20

申请号：US18387655

申请日：2023-11-07

Applicant: SEMES CO., LTD.

Inventor： Tae Sung KIM ,  Duk Hyun SON

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J2237/334

Abstract: The substrate processing device includes a chamber in which a processing space for processing a substrate is formed, a substrate support unit supporting the substrate in the processing space, a gas supply portion supplying process gas to the processing space, a gas supply unit supplying gas to the gas supply portion, and a controller connected to the gas supply unit, wherein the gas supply unit includes a flow control valve controlling a flow rate of the process gas supplied through a gas supply line, and the controller controls, during a first time, the flow control valve to alternately provide supply of a flow rate greater than an average flow rate for the first time and supply of a flow rate less than the average flow rate.

公开(公告)号：US20160027617A1

公开(公告)日：2016-01-28

申请号：US14796620

申请日：2015-07-10

Applicant: Semes Co., Ltd

Inventor： Duk Hyun SON ,  Jung Hwan LEE

IPC: H01J37/32 ,  H01J37/244

CPC classification number: H01J37/32183 ,  H01J37/321 ,  H01J37/32577 ,  H01J37/32935

Abstract: Disclosed are an apparatus for treating a substrate and a plasma generating device. The apparatus for treating a substrate includes a process chamber, a support unit supporting the substrate in the process chamber, a gas supply unit supplying a process gas in the process chamber, and a plasma generating unit generating a plasma from the process gas supplied in the process chamber, and the plasma generating unit includes a high frequency power supply, an antenna unit connected to the high frequency power via a supply line, and an impedance matcher connected between the high frequency power supply and the antenna unit via the supply line and matching impedance, and the impedance matcher includes a first sensor connected to an input terminal and measuring input impedance and a second sensor connected to an output terminal and measuring output impedance.

Abstract translation: 公开了一种用于处理基板和等离子体产生装置的装置。 用于处理基板的设备包括处理室，在处理室中支撑基板的支撑单元，在处理室中供应处理气体的气体供应单元和从供应在处理室中的处理气体产生等离子体的等离子体产生单元 处理室，等离子体产生单元包括高频电源，通过电源线连接到高频电源的天线单元，以及通过供电线连接在高频电源和天线单元之间的阻抗匹配器，并且匹配 阻抗匹配器包括连接到输入端子的第一传感器和测量输入阻抗，第二传感器连接到输出端并测量输出阻抗。