SUBSTRATE AND METHOD FOR PRODUCING THE SAME
    1.
    发明公开

    公开(公告)号:US20230398655A1

    公开(公告)日:2023-12-14

    申请号:US18333125

    申请日:2023-06-12

    IPC分类号: B24B7/22

    CPC分类号: B24B7/228

    摘要: Proposed herein is a method for producing a substrate suitable for mask blanks for EUVL and the method being capable of suppressing a concave defect having a depth of less than 5 nm.
    The present invention provides a method for producing a substrate in which final polishing is performed by a polishing apparatus having an upper polishing plate equipped with a polishing pad, the method comprising the steps of placing a substrate stock in the polishing apparatus so that the main surface of the substrate stock face toward the upper polishing plate; rotating the upper polishing plate and polishing the substrate stock concomitantly with a polishing slurry on the main surface of the substrate stock; and raising the upper polishing plate which is kept being rotated to separate it from the main surface of the polished substrate stock.

    RECTANGULAR GLASS SUBSTRATE AND METHOD FOR PREPARING THE SAME

    公开(公告)号:US20180057399A1

    公开(公告)日:2018-03-01

    申请号:US15685520

    申请日:2017-08-24

    摘要: A rectangular glass substrate has a front surface, a back surface, four side surfaces, and eight chamfered surfaces, and a thickness of at least 6 mm. A first curved surface along the edge line between the front surface and the chamfered surface disposed adjacent thereto has an average gradient of up to 25% in a range from the front surface to a position of 50 μm below the front surface when the substrate is rested horizontal with the front surface facing upward. A second curved surface along the edge line between at least one of four side surfaces and the chamfered surface disposed adjacent to the front surface has an average gradient of at least 30% in a range from the at least one side surface to a position of 50 μm below the at least one side surface when the substrate is rested horizontal with the at least one side surface facing upward.

    MASK BLANKS SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20230037856A1

    公开(公告)日:2023-02-09

    申请号:US17856191

    申请日:2022-07-01

    IPC分类号: G03F1/60

    摘要: A mask blanks substrate having a flatness of a calculation surface of 100 nm or less when a calculation region passing through central portions of first and second main surfaces and extending in a horizontal direction is set, a first region surface is cut out, a second region surface is cut out by setting a reference plane and a rotation axis and rotating the substrate by 180°, least square planes are calculated, the first and second region surfaces are converted into height maps to positions on the least square planes, the height map of the to second region surface is set as a reverse height map by symmetrically moving the height map, and a map of a calculated height obtained by adding heights of the height map of the first region surface and the reverse height map of the second region surface is set as the calculation surface.

    POLISHING COMPOSITION
    5.
    发明申请

    公开(公告)号:US20220372331A1

    公开(公告)日:2022-11-24

    申请号:US17732242

    申请日:2022-04-28

    IPC分类号: C09G1/02 C09K3/14

    摘要: A polishing composition including a colloidal silica containing colloidal silica particles, a pH adjusting agent, and a chelating agent provides a substrate that has a surface having a high flatness, low defects and a low surface roughness with low cost and high productivity, and a substrate having high surface quality suitable as a substrate for mask blanks such as a glass substrate containing SiO2 as a main component, particularly, as a substrate for mask blanks used in EUVL.