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    OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE
    2.
    发明申请
    OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE 审中-公开

    公开(公告)号：US20200263321A1

    公开(公告)日：2020-08-20

    申请号：US16868528

    申请日：2020-05-06

    Applicant: SLT Technologies, Inc

    Inventor： Wenkan JIANG ,  Dirk EHRENTRAUT ,  Mark P. D'EVELYN

    IPC: C30B29/40 ,  H01L29/30 ,  H01L29/20 ,  C30B7/10 ,  C01B21/06

    Abstract: A gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) −c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×1017 cm−3, an impurity concentration of oxygen between about 2×1017 cm−3 and about 1×1020 cm−3, an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl greater than about 1×1016 cm−3, a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cm−1 at wavenumbers of approximately 3175 cm−1, 3164 cm−1, and 3150 cm−1, and wherein, at wavenumbers between about 3200 cm−1 and about 3400 cm−1 and between about 3075 cm−1 and about 3125 cm−1, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm.

    LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MAKING, AND METHODS OF USE
    3.
    发明公开
    LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MAKING, AND METHODS OF USE 审中-公开

    公开(公告)号：US20230340695A1

    公开(公告)日：2023-10-26

    申请号：US18338280

    申请日：2023-06-20

    Applicant: SLT Technologies, Inc.

    Inventor： Dirk EHRENTRAUT ,  Mark P. D'EVELYN ,  Drew W. CARDWELL

    IPC: C30B29/60 ,  C30B29/40 ,  C30B7/10

    CPC classification number: C30B29/605 ,  C30B29/403 ,  C30B29/406 ,  C30B7/105

    Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

    PROCESS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH AND SINGLE CRYSTAL GROWN THEREBY
    5.
    发明公开
    PROCESS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH AND SINGLE CRYSTAL GROWN THEREBY 审中-公开

    公开(公告)号：US20240247406A1

    公开(公告)日：2024-07-25

    申请号：US18418141

    申请日：2024-01-19

    Applicant: SLT Technologies, Inc.

    Inventor： Drew W. CARDWELL ,  Dirk EHRENTRAUT ,  Mark P. D'EVELYN ,  Rajeev Tirumala PAKALAPATI

    IPC: C30B29/40 ,  C30B7/10

    CPC classification number: C30B29/403 ,  C30B7/105

    Abstract: Embodiments of the disclosure include a free-standing crystal, comprising a group III metal and nitrogen. The free-standing crystal may comprise: a wurtzite crystal structure; a growth direction, the growth direction being selected from one of [0 0 0 ±1], {1 0 −1 0}, {1 0 −1 ±1}, or {1 0 −1 ±2}. A first surface having a dislocation density between 1 cm−2 and 107 cm−2, the dislocations having an orientation within 30 degrees of the growth direction, and an average impurity concentration of H greater than 1017 cm−3. The free-standing crystal having at least four sets of bands, wherein each set of bands includes a first sub-band and a second sub-band, the first sub-band having a concentration of at least one impurity selected from H, O, Li, Na, K, F, Cl, Br, and I; and each of the at least four sets of bands have portions that are substantially parallel.

    OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE
    6.
    发明公开
    OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE 审中-公开

    公开(公告)号：US20240183074A1

    公开(公告)日：2024-06-06

    申请号：US18440646

    申请日：2024-02-13

    Applicant: SLT Technologies, Inc.

    Inventor： Wenkan JIANG ,  Dirk EHRENTRAUT ,  Mark P. D'EVELYN

    IPC: C30B29/40 ,  C01B21/06 ,  C30B7/10 ,  H01L29/20 ,  H01L29/30

    CPC classification number: C30B29/406 ,  C01B21/0632 ,  C30B7/105 ,  H01L29/2003 ,  H01L29/30 ,  C01P2002/30 ,  C01P2002/74 ,  C01P2002/80 ,  C01P2006/80

    Abstract: A gallium-containing nitride crystals comprising: a top surface having a crystallographic orientation within 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) −c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen >5×1017 cm−3; an impurity concentration of oxygen between 2×1017 cm−3 and 1×1020 cm−3; an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl >1×1016 cm−3; a compensation ratio between 1.0 and 4.0; an absorbance per unit thickness of at least 0.01 cm−1 at wavenumbers of 3175 cm−1, 3164 cm−1, and 3150 cm−1; and wherein, at wavenumbers between 3200 cm−1 and 3400 cm−1 and between 3075 cm−1 and 3125 cm−1, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness >10% of the absorbance per unit thickness at 3175 cm−1.

    OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE
    7.
    发明公开
    OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE 审中-公开

    公开(公告)号：US20240133076A1

    公开(公告)日：2024-04-25

    申请号：US18542594

    申请日：2023-12-16

    Applicant: SLT Technologies, Inc.

    Inventor： Wenkan JIANG ,  Dirk EHRENTRAUT ,  Mark P. D'EVELYN

    IPC: C30B29/40 ,  C01B21/06 ,  C30B7/10 ,  H01L29/20 ,  H01L29/30

    CPC classification number: C30B29/406 ,  C01B21/0632 ,  C30B7/105 ,  H01L29/2003 ,  H01L29/30 ,  C01P2002/30 ,  C01P2002/74 ,  C01P2002/80 ,  C01P2006/80

    Abstract: A gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) −c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×1017 cm−3; an impurity concentration of oxygen between about 2×1017 cm−3 and about 1×1020 cm−3; an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl greater than about 1×1016 cm−3; a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cm−1 at wavenumbers of approximately 3175 cm−1, 3164 cm−1, and 3150 cm−1; and wherein, at wavenumbers between about 3200 cm−1 and about 3400 cm−1 and between about 3075 cm−1 and about 3125 cm−1, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm.

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