公开(公告)号：US20200283892A1

公开(公告)日：2020-09-10

申请号：US16814813

申请日：2020-03-10

Applicant: SLT Technologies, Inc

Inventor： Douglas W. POCIUS ,  Derrick S. KAMBER ,  Mark P. D'EVELYN ,  Jonathan D. COOK

IPC: C23C16/30 ,  C23C16/44 ,  C30B7/10 ,  C30B29/40 ,  C23C16/01 ,  C01B21/06 ,  C23C16/448

Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.

公开(公告)号：US20190003078A1

公开(公告)日：2019-01-03

申请号：US16019528

申请日：2018-06-26

Applicant: SLT Technologies, Inc

Inventor： Mark P. D'EVELYN ,  Dirk EHRENTRAUT ,  Derrick S. KAMBER ,  Bradley C. DOWNEY

IPC: C30B29/40 ,  C30B7/10

Abstract: Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.

公开(公告)号：US20200224331A1

公开(公告)日：2020-07-16

申请号：US16736274

申请日：2020-01-07

Applicant: SLT Technologies, Inc

Inventor： Mark P. D'EVELYN ,  Derrick S. KAMBER

IPC: C30B29/40 ,  C30B25/20 ,  C30B25/16

Abstract: A method for forming a laterally-grown group III metal nitride crystal includes providing a substrate, the substrate including one of sapphire, silicon carbide, gallium arsenide, silicon, germanium, a silicon-germanium alloy, MgAl2O4 spinel, ZnO, ZrB2, BP, InP, AlON, ScAlMgO4, YFeZnO4, MgO, Fe2NiO4, LiGa5O8, Na2MoO4, Na2WO4, In2CdO4, lithium aluminate (LiAlO2), LiGaO2, Ca8La2(PO4)6O2, gallium nitride, or aluminum nitride (AlN), forming a pattern on the substrate, the pattern comprising growth centers having a minimum dimension between 1 micrometer and 100 micrometers, and being characterized by at least one pitch dimension between 20 micrometers and 5 millimeters, growing a group III metal nitride from the pattern of growth centers vertically and laterally, and removing the laterally-grown group III metal nitride layer from the substrate. A laterally-grown group III metal nitride layer coalesces, leaving an air gap between the laterally-grown group III metal nitride layer and the substrate or a mask thereupon.

公开(公告)号：US20230317444A1

公开(公告)日：2023-10-05

申请号：US18331719

申请日：2023-06-08

Applicant: SLT Technologies, Inc.

Inventor： Wenkan JIANG ,  Mark P. D'EVELYN ,  Derrick S. KAMBER ,  Dirk EHRENTRAUT ,  Jonathan D. COOK ,  James WENGER

IPC: H01L21/02 ,  C30B7/10 ,  C30B33/10 ,  C30B7/00 ,  C30B29/40

CPC classification number: H01L21/02005 ,  H01L21/02647 ,  H01L21/02642 ,  H01L21/0254 ,  C30B7/105 ,  C30B33/10 ,  C30B7/005 ,  C30B29/406 ,  H01L29/7788

Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

公开(公告)号：US20190161858A9

公开(公告)日：2019-05-30

申请号：US16023137

申请日：2018-06-29

Applicant: SLT Technologies, Inc

Inventor： Douglas W. POCIUS ,  Derrick S. KAMBER ,  Mark P. D'EVELYN ,  Jonathan D. COOK

IPC: C23C16/30 ,  C23C16/448 ,  C30B29/40 ,  C30B7/10 ,  C23C16/44 ,  C01B21/06 ,  C23C16/01

Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.

公开(公告)号：US20210249252A1

公开(公告)日：2021-08-12

申请号：US16882219

申请日：2020-05-22

Applicant: SLT Technologies, Inc

Inventor： Wenkan JIANG ,  Mark P. D'EVELYN ,  Derrick S. KAMBER ,  Dirk EHRENTRAUT ,  Jonathan D. COOK ,  James WENGER

IPC: H01L21/02 ,  C30B7/10 ,  C30B29/40 ,  C30B33/10 ,  C30B7/00

Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

公开(公告)号：US20180371609A1

公开(公告)日：2018-12-27

申请号：US16023137

申请日：2018-06-29

Applicant: SLT Technologies, Inc

Inventor： Douglas W. POCIUS ,  Derrick S. KAMBER ,  Mark P. D'EVELYN ,  Jonathan D. COOK

IPC: C23C16/30 ,  C23C16/448 ,  C30B29/40 ,  C30B7/10 ,  C23C16/44 ,  C01B21/06 ,  C23C16/01

Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.