IMAGE SENSOR WITH IMPROVED SETTLING TIME
    1.
    发明申请

    公开(公告)号:US20180158854A1

    公开(公告)日:2018-06-07

    申请号:US15372017

    申请日:2016-12-07

    Inventor: Cedric Tubert

    CPC classification number: H01L27/14612

    Abstract: A circuit includes a pixel structure having a photo sensitive element and a read transistor. The read transistor includes a first load path terminal coupled to the photo sensitive element, and a second load path terminal coupled to a voltage bus. The circuit also includes a first transistor having a third load path terminal coupled to a power supply node, and a fourth load path terminal configured to be coupled to a current source. The circuit further includes a first control switch coupled between the voltage bus and the fourth load path terminal of the first transistor.

    Pixel circuit with fast read out
    2.
    发明授权

    公开(公告)号:US09706147B2

    公开(公告)日:2017-07-11

    申请号:US14600887

    申请日:2015-01-20

    Inventor: Cedric Tubert

    Abstract: An image sensor includes a first photodiode with associated first sense node and a second photodiode with associated second sense node. A first transistor has its control node coupled to the first sense node and a second transistor has its control node coupled to the second sense node. The conduction paths (for example, source-drain paths) of the first and second transistors are coupled in series between first and second column lines associated with a column of the image sensor array. Switches control connection of the first and second column lines in two modes: one mode where a voltage is applied to the first column line and data from one of the photodiodes is read out by the second column line; and another mode where a voltage is applied to the second column line and data from the other of the photodiodes is read out by the first column line.

    Reading circuit for a pixel array

    公开(公告)号:US12081888B2

    公开(公告)日:2024-09-03

    申请号:US17660084

    申请日:2022-04-21

    CPC classification number: H04N25/75 H03M1/1245 H03M1/46 H04N25/625 H04N25/677

    Abstract: The present disclosure relates to a read-out circuit comprising N inputs configured to be connected to N respective outputs of a pixel array of an image sensor, with N being an integer strictly greater than 1; and N analog-to-digital converters organized in K groups, with K being an integer strictly greater than 1 and strictly less than N, and each having a first input coupled to a respective one of the N inputs and a second input. In each group, the second inputs of the analog-to-digital converters of the group are connected together, electrically decoupled from the second inputs of the analog-to-digital converters of the other groups, and configured to receive a first reference signal that is identical for all the analog-to-digital converters of the group.

    Counter circuit
    6.
    发明授权

    公开(公告)号:US09774333B2

    公开(公告)日:2017-09-26

    申请号:US14882868

    申请日:2015-10-14

    Inventor: Cedric Tubert

    CPC classification number: H03K23/542

    Abstract: A counter circuit includes a first Johnson counter circuit and a second Johnson counter circuit coupled in cascade. Each Johnson counter circuit includes a clock input, a data input, a first clock data output, a second clock data output and a feedback from the second clock data input to first data input. The clock input of the first Johnson counter circuit is configured to receive an input clock signal. The clock input of the second Johnson counter circuit is connected to the second clock data output of the first Johnson counter circuit. A ripple counter circuit has a clock input and additional clock data outputs. The clock input of the ripple counter circuit is connected to the second clock data output of the preceding Johnson counter circuit.

    PIXEL CIRCUIT WITH FAST READ OUT
    7.
    发明申请
    PIXEL CIRCUIT WITH FAST READ OUT 有权
    快速读取的像素电路

    公开(公告)号:US20150215559A1

    公开(公告)日:2015-07-30

    申请号:US14600887

    申请日:2015-01-20

    Inventor: Cedric Tubert

    Abstract: An image sensor includes a first photodiode with associated first sense node and a second photodiode with associated second sense node. A first transistor has its control node coupled to the first sense node and a second transistor has its control node coupled to the second sense node. The conduction paths (for example, source-drain paths) of the first and second transistors are coupled in series between first and second column lines associated with a column of the image sensor array. Switches control connection of the first and second column lines in two modes: one mode where a voltage is applied to the first column line and data from one of the photodiodes is read out by the second column line; and another mode where a voltage is applied to the second column line and data from the other of the photodiodes is read out by the first column line.

    Abstract translation: 图像传感器包括具有相关联的第一感测节点的第一光电二极管和具有相关联的第二感测节点的第二光电二极管。 第一晶体管的控制节点耦合到第一感测节点,而第二晶体管的控制节点耦合到第二感测节点。 第一和第二晶体管的导通路径(例如源极 - 漏极路径)串联耦合在与图像传感器阵列的列相关联的第一和第二列线之间。 开关以两种模式控制第一和第二列线的连接:将电压施加到第一列线的一种模式,并且由第二列线读出来自一个光电二极管的数据; 以及向第二列线施加电压的另一模式,并且由第一列线读出来自另一个光电二极管的数据。

    LIGHT SENSOR
    8.
    发明公开
    LIGHT SENSOR 审中-公开

    公开(公告)号:US20240192053A1

    公开(公告)日:2024-06-13

    申请号:US18524960

    申请日:2023-11-30

    CPC classification number: G01J1/44 G01J2001/446

    Abstract: An embodiment light sensor includes an array of pixels arranged in rows and in columns. Each pixel comprises a photodiode, a sense node coupled to the photodiode, and an initialization transistor connected to the sense node. N successive pixels of a column or of a row are associated, where N is greater than or equal to 2. The initialization transistor of a first one of the pixels arranged at one end of the association of the N pixels is connected between the sense node of the first one of the pixels and a node of application of an initialization potential. For each two successive pixels among the N pixels, the initialization transistor of one of the pixels that is the most distant from the end is connected between the sense nodes of the two pixels.

    METHOD AND SYSTEM FOR DETERMINING A DEPTH IMAGE OF A SCENE

    公开(公告)号:US20240153117A1

    公开(公告)日:2024-05-09

    申请号:US18488086

    申请日:2023-10-17

    CPC classification number: G06T7/521 G06T7/90 G06T2207/10024 G06T2207/10028

    Abstract: The present description concerns a system for determining a depth image of a scene, configured to project a spot pattern onto the scene and acquire an image of the scene; determining I and Q values of the image pixels; determining, for each pixel, at least one confidence value to form a confidence image; determining the local maximum points of the confidence image having a confidence value greater than a first threshold; selecting, for each local maximum point, pixels around the local maximum point having a confidence value greater than a second threshold; determining a value Imoy equal to the average of the I values of the selected pixels and a value Qmoy equal to the average of the Q values of the selected pixels; and determining the depth of the local maximum point based on values Imoy and Qmoy.

    Method and device for adjusting the bias voltage of a SPAD photodiode
    10.
    发明授权
    Method and device for adjusting the bias voltage of a SPAD photodiode 有权
    用于调整SPAD光电二极管偏置电压的方法和装置

    公开(公告)号:US09190552B2

    公开(公告)日:2015-11-17

    申请号:US13896219

    申请日:2013-05-16

    Abstract: The present disclosure relates to a method for adjusting a bias voltage of a SPAD photodiode, comprising successive steps of: applying to the photodiode a first test bias voltage lower than a normal bias voltage applied to the photodiode in a normal operating mode, subjecting the photodiode to photons, reading a first avalanche triggering signal of the photodiode, applying to the photodiode a second test bias voltage, different from the first test bias voltage, subjecting the photodiode to photons, reading a second avalanche triggering signal of the photodiode, increasing the normal bias voltage if the first and second signals indicate that the photodiode did not avalanche trigger, and reducing the normal bias voltage if the first and second signals indicate that the photodiode did avalanche trigger.

    Abstract translation: 本公开涉及一种用于调整SPAD光电二极管的偏置电压的方法,包括以下步骤:在正常工作模式下向光电二极管施加低于施加到光电二极管的正常偏置电压的第一测试偏置电​​压,对光电二极管 读取光电二极管的第一雪崩触发信号,向光电二极管施加与第一测试偏置电​​压不同的第二测试偏置电​​压,对光电二极管进行光子,读取光电二极管的第二雪崩触发信号,从而增加正常 如果第一和第二信号指示光电二极管没有雪崩触发,并且如果第一和第二信号指示光电二极管发生雪崩触发,则降低正常偏置电压。

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