Abstract:
A circuit includes a pixel structure having a photo sensitive element and a read transistor. The read transistor includes a first load path terminal coupled to the photo sensitive element, and a second load path terminal coupled to a voltage bus. The circuit also includes a first transistor having a third load path terminal coupled to a power supply node, and a fourth load path terminal configured to be coupled to a current source. The circuit further includes a first control switch coupled between the voltage bus and the fourth load path terminal of the first transistor.
Abstract:
An image sensor includes a first photodiode with associated first sense node and a second photodiode with associated second sense node. A first transistor has its control node coupled to the first sense node and a second transistor has its control node coupled to the second sense node. The conduction paths (for example, source-drain paths) of the first and second transistors are coupled in series between first and second column lines associated with a column of the image sensor array. Switches control connection of the first and second column lines in two modes: one mode where a voltage is applied to the first column line and data from one of the photodiodes is read out by the second column line; and another mode where a voltage is applied to the second column line and data from the other of the photodiodes is read out by the first column line.
Abstract:
The present disclosure relates to a read-out circuit comprising N inputs configured to be connected to N respective outputs of a pixel array of an image sensor, with N being an integer strictly greater than 1; and N analog-to-digital converters organized in K groups, with K being an integer strictly greater than 1 and strictly less than N, and each having a first input coupled to a respective one of the N inputs and a second input. In each group, the second inputs of the analog-to-digital converters of the group are connected together, electrically decoupled from the second inputs of the analog-to-digital converters of the other groups, and configured to receive a first reference signal that is identical for all the analog-to-digital converters of the group.
Abstract:
In an embodiment, a method includes: receiving data signals from a plurality of pixels of an array of pixels; generating a plurality of signal-to-noise ratios by determining signal-to-noise ratios for each respective pixel of the plurality of pixels on the basis of the data signals received from the respective pixel; and filtering the data signals received from each pixel of the plurality of pixels by using an adaptive filter configured on the basis of the plurality of the signal-to-noise ratios to generate filtered data signals.
Abstract:
The invention concerns a device including: first and second detectors of the phase and/or of the frequency of an input signal with respect to first and second reference signals; and a Sigma/Delta converter interpreting outputs of the first or of the second phase and/or frequency detector to determine a propagation time of the input signal.
Abstract:
A counter circuit includes a first Johnson counter circuit and a second Johnson counter circuit coupled in cascade. Each Johnson counter circuit includes a clock input, a data input, a first clock data output, a second clock data output and a feedback from the second clock data input to first data input. The clock input of the first Johnson counter circuit is configured to receive an input clock signal. The clock input of the second Johnson counter circuit is connected to the second clock data output of the first Johnson counter circuit. A ripple counter circuit has a clock input and additional clock data outputs. The clock input of the ripple counter circuit is connected to the second clock data output of the preceding Johnson counter circuit.
Abstract:
An image sensor includes a first photodiode with associated first sense node and a second photodiode with associated second sense node. A first transistor has its control node coupled to the first sense node and a second transistor has its control node coupled to the second sense node. The conduction paths (for example, source-drain paths) of the first and second transistors are coupled in series between first and second column lines associated with a column of the image sensor array. Switches control connection of the first and second column lines in two modes: one mode where a voltage is applied to the first column line and data from one of the photodiodes is read out by the second column line; and another mode where a voltage is applied to the second column line and data from the other of the photodiodes is read out by the first column line.
Abstract:
An embodiment light sensor includes an array of pixels arranged in rows and in columns. Each pixel comprises a photodiode, a sense node coupled to the photodiode, and an initialization transistor connected to the sense node. N successive pixels of a column or of a row are associated, where N is greater than or equal to 2. The initialization transistor of a first one of the pixels arranged at one end of the association of the N pixels is connected between the sense node of the first one of the pixels and a node of application of an initialization potential. For each two successive pixels among the N pixels, the initialization transistor of one of the pixels that is the most distant from the end is connected between the sense nodes of the two pixels.
Abstract:
The present description concerns a system for determining a depth image of a scene, configured to project a spot pattern onto the scene and acquire an image of the scene; determining I and Q values of the image pixels; determining, for each pixel, at least one confidence value to form a confidence image; determining the local maximum points of the confidence image having a confidence value greater than a first threshold; selecting, for each local maximum point, pixels around the local maximum point having a confidence value greater than a second threshold; determining a value Imoy equal to the average of the I values of the selected pixels and a value Qmoy equal to the average of the Q values of the selected pixels; and determining the depth of the local maximum point based on values Imoy and Qmoy.
Abstract:
The present disclosure relates to a method for adjusting a bias voltage of a SPAD photodiode, comprising successive steps of: applying to the photodiode a first test bias voltage lower than a normal bias voltage applied to the photodiode in a normal operating mode, subjecting the photodiode to photons, reading a first avalanche triggering signal of the photodiode, applying to the photodiode a second test bias voltage, different from the first test bias voltage, subjecting the photodiode to photons, reading a second avalanche triggering signal of the photodiode, increasing the normal bias voltage if the first and second signals indicate that the photodiode did not avalanche trigger, and reducing the normal bias voltage if the first and second signals indicate that the photodiode did avalanche trigger.