Abstract:
A photoresist composition includes an alkali soluble resin, a photosensitive compound, a first solvent having a boiling point of less than 200° C., and a second solvent having a boiling point of equal to or greater than 200° C.
Abstract:
A color filter array panel and a display device including the same are provided. The color filter array panel includes a substrate; a first pixel and a second pixel disposed adjacent to each other; a data line disposed on the substrate and between the first pixel and the second pixel; a first color filter disposed in the first pixel; a second color filter disposed in the second pixel, the first color filter and the second color filter overlap each other to form a color filter overlapped portion overlapping the data line; an inorganic layer disposed on the color filter overlapped portion; an organic layer disposed on the inorganic layer, the first color filter, and the second color filter; and a first pixel electrode disposed in the first pixel; and a second pixel electrode disposed in the second pixel The inorganic layer is disposed between the first pixel electrode and the second pixel electrode.
Abstract:
Embodiments of the present disclosure provide a display panel including: an overcoat layer disposed on a light emitting element layer and having a first refractive index; and a cover window disposed on the overcoat layer and having a second refractive index greater than the first refractive index, wherein at least one of the overcoat layer and the cover window includes a plurality of inclined surfaces, and inclination angles of the plurality of inclined surfaces in a central area are different from those in an edge area. The display panel, the manufacturing method thereof, and the head-mounted display device including the same according to the embodiments of the present disclosure May control the angle of emitted light.
Abstract:
A light emitting display device includes a substrate, an organic layer, a conductor, an anode, and a pixel definition layer. The organic layer overlaps the substrate and has a connection opening. The conductor is positioned between the substrate and the organic layer. The anode is positioned on the organic layer and is partially positioned inside the connection opening. The pixel definition layer exposes an exposed portion of the anode. The organic layer has a halftone exposure portion and a neighboring portion. The halftone exposure portion overlaps the exposed portion of the anode and overlaps the conductor. The neighboring portion neighbors the halftone exposure portion. A face of the halftone exposure portion and a face of the neighboring portion are spaced from the substrate by a first distance and a second distance, respectively. A difference between the first distance and the second distance is 30 nm or less.
Abstract:
An input sensing unit includes a base including light-transmitting areas and non-light transmitting areas. A light absorbing pattern is provided corresponding to the non-light transmitting areas and is configured to absorb incident light. A sensing electrode overlaps the light absorbing pattern. The light absorbing pattern has an aperture for exposing a light-transmitting area of the light-transmitting areas. A boundary of the aperture and an outer boundary of the light-transmitting area are spaced apart from each other. The input sensing unit has improved viewing angle/luminance ratio and improved characteristics of reflective color.
Abstract:
A photosensitive resin composition, an organic light emitting display device, and method for manufacturing an organic light emitting device, the composition including a photosensitive compound; a solvent; and a silsesquioxane-based copolymer, the silsesquioxane-based copolymer being obtained by copolymerizing a compound represented by the following Chemical Formula 1 with at least one of a compound represented by the following Chemical Formula 2, and a compound represented by the following Chemical Formula 3; R1-R2—Si(R3)3 [Chemical Formula 1] R4—Si(R5)3 [Chemical Formula 2] Si(R6)4. [Chemical Formula 3]
Abstract:
There is provided a cleaner composition for a process of manufacturing a semiconductor and a display. The cleaner composition includes 0.01 to 5.0 wt % of amino acid-based chelating agent, 0.01 to 1.5 wt % of organic acid, 0.01 to 1.0 wt % of inorganic acid, 0.01 to 5.0 wt % of alkali compound, and the balance of deionized water and is based on acidic water with pH levels of 1 to 5. The cleaner composition may enhance metal contaminants removal capability and have a function to remove particles and organic contaminants, and prevent corrosion of copper and reverse adsorption of copper. Thus, cleaner composition may be used for various purposes of etching copper, removing residues, and a cleaner by adjusting an etch rate.
Abstract:
A positive photosensitive siloxane resin composition includes a) a siloxane copolymer obtained by performing hydrolysis and condensation polymerization of i) at least one reactive silane represented by the following Chemical Formula 1 and ii) at least one 4-functional reactive silane represented by the following Chemical Formula 2 under a catalyst, the copolymer having a polystyrene-converted weight average molecular weight Mw of 1,000 to 20,000, b) a 1,2-quinonediazide compound, and c) a solvent, (R1)nSi(R2)4-n [Chemical Formula 1] Si(R3)4 [Chemical Formula 2] wherein R1s may each independently be any one of an alkyl group having 1 to 10 carbon atoms and an aryl group having 6 to 15 carbon atoms, R2 may be an alkoxy group having 1 to 4 carbon atoms, phenoxy, or acetoxy, Ras may each independently be any one of an alkoxy group having 1 to 4 carbon atoms, phenoxy, or an acetoxy group, and n may be a natural number of 1 to 3.
Abstract:
A photomask for exposure includes: a transparent substrate; a light blocking pattern layer positioned on the transparent substrate; a first dielectric layer positioned on the light blocking pattern layer and including a dielectric material; and a negative refractive index layer positioned on the first dielectric layer and including a metal. A surface plasmon quasi-bound mode of the photomask for exposure overlaps a wavelength range of the light source of the light exposer which irradiates light to the photomask for exposure.
Abstract:
A light emitting display device includes a first semiconductor layer; a first gate insulating layer; a first gate conductive layer; a second gate insulating layer; a first data conductive layer; a lower organic layer; a second data conductive layer includes a first anode connection member and a second anode connection member; an upper organic layer; a first anode and a second anode; and a pixel defining layer that includes a first opening and a second opening respectively exposing the first anode and the second anode, wherein the upper organic layer include a first anode connection opening and a second anode connection opening through which the first anode and the second anode are respectively electrically connected with the first anode connection member and the second anode connection member.