公开(公告)号：US09837316B2

公开(公告)日：2017-12-05

申请号：US15367568

申请日：2016-12-02

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jongchan Lee ,  Yoonho Khang ,  Myounghwa Kim ,  Joonhwa Bae ,  Myounggeun Cha

IPC: H01L21/77 ,  H01L21/8234 ,  H01L21/285 ,  H01L29/786 ,  H01L29/45 ,  H01L29/417 ,  H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  H01L21/3205 ,  H01L27/32

CPC classification number: H01L21/823418 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/28518 ,  H01L21/32053 ,  H01L27/1222 ,  H01L27/1274 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

Abstract: A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.

公开(公告)号：US20230138392A1

公开(公告)日：2023-05-04

申请号：US17975361

申请日：2022-10-27

Applicant: Samsung Display Co., Ltd.

Inventor： Sukyeong Shin ,  Joonhwa Bae ,  Heesung Yang ,  Woojin Cho

IPC: H01L27/32 ,  H01L51/52

Abstract: A display device and a method of manufacturing the display device are provided. The display device includes a substrate having a display area in which a plurality of pixels are arranged, a plurality of bank layers arranged on the substrate and defining opening areas respectively corresponding to the plurality of pixels, and a bank protection layer at an outermost portion of the plurality of bank layers.

公开(公告)号：US09653292B2

公开(公告)日：2017-05-16

申请号：US14568309

申请日：2014-12-12

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Joonhwa Bae ,  Yoonho Khang

IPC: H01L21/02 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L21/02675 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02691 ,  H01L27/1222 ,  H01L29/7866

Abstract: A method of manufacturing a thin film transistor substrate includes forming an amorphous silicon layer on a substrate, the substrate having a rectangular shape, and irradiating the amorphous silicon layer with a laser beam at a random pitch, such that the amorphous silicon layer is crystallizes into a polycrystalline silicon layer, wherein the laser beam has a major axis and a minor axis, the major axis being non-parallel with respect to sides of the substrate.

公开(公告)号：US09515154B2

公开(公告)日：2016-12-06

申请号：US14597563

申请日：2015-01-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jongchan Lee ,  Yoonho Khang ,  Myounghwa Kim ,  Joonhwa Bae ,  Myounggeun Cha

IPC: H01L29/45 ,  H01L21/285 ,  H01L29/786 ,  H01L29/417 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L21/823418 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/28518 ,  H01L21/32053 ,  H01L27/1222 ,  H01L27/1274 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

Abstract: A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.

Abstract translation: 薄膜晶体管包括在基板上的多晶硅层，其包括第二和第三区域之间的第一区域。 在基板上形成多晶硅层，在第一和第三区域的多晶硅层上形成源电极和漏电极。 源电极和漏电极中的每一个包括与多晶硅层相邻的金属硅化物层。

公开(公告)号：US20240324304A1

公开(公告)日：2024-09-26

申请号：US18504162

申请日：2023-11-08

Applicant: Samsung Display Co., Ltd.

Inventor： Youngrok Kim ,  Woojin Cho ,  Joonhwa Bae ,  Sukyeong Shin ,  Heesung Yang

IPC: H10K59/122 ,  H10K59/12

CPC classification number: H10K59/122 ,  H10K59/1201

Abstract: A display apparatus includes an organic insulating layer located on a substrate, and including a first opening, a second opening, and a third opening, a first pixel electrode and a second pixel electrode located on the organic insulating layer and respectively disposed in the first opening and the second opening, a pixel-defining film located on the organic insulating layer and protruding toward the third opening beyond the organic insulating layer, a first intermediate layer and a second intermediate layer respectively located on the first pixel electrode and the second pixel electrode, and a counter electrode located on the first intermediate layer and the second intermediate layer.

公开(公告)号：US20230125691A1

公开(公告)日：2023-04-27

申请号：US17747461

申请日：2022-05-18

Applicant: Samsung Display Co., Ltd.

Inventor： Heesung Yang ,  Joonhwa Bae

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

Abstract: A display apparatus includes a light-emitting element, an encapsulation layer covering the light-emitting element, a bank on the encapsulation layer and including an opening corresponding to the light-emitting element, and a quantum-dot layer in the opening of the bank. Roughness of a lower surface of the quantum-dot layer which is closest to the encapsulation layer is different from roughness of an upper surface of the quantum-dot layer which is furthest from the encapsulation layer.

公开(公告)号：US11203703B2

公开(公告)日：2021-12-21

申请号：US16247730

申请日：2019-01-15

Applicant: SAMSUNG DISPLAY CO., LTD. ,  UBmaterials Inc.

Inventor： Hyunjin Cho ,  Joonhwa Bae ,  Byoungkwon Choo ,  Woojin Cho ,  Jinhyung Park

IPC: H01L21/321 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/302 ,  C09K3/14 ,  C09G1/04 ,  C09G1/02 ,  C09G1/00 ,  B24B37/04

Abstract: A polishing slurry includes an abrasive material, a first oxide polishing promoter, a first nitride polishing inhibitor, and a second nitride polishing inhibitor. The first oxide polishing promoter includes a polymer-based oxide polishing promoter. The first nitride polishing inhibitor includes an anionic nitride polishing inhibitor. The second nitride polishing inhibitor includes at least one selected from a cationic nitride polishing inhibitor and a non-ionic nitride polishing inhibitor.

公开(公告)号：US09647089B2

公开(公告)日：2017-05-09

申请号：US14696257

申请日：2015-04-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Woonghee Jeong ,  Joonhwa Bae ,  Youngki Shin ,  Yoonho Khang

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L21/02

CPC classification number: H01L29/66757 ,  H01L21/02532 ,  H01L21/02675 ,  H01L27/1281 ,  H01L29/78675

Abstract: Thin film transistor substrate includes: a substrate; a crystalline silicon layer on the substrate; and a capping layer covering the crystalline silicon layer and including a first portion having a first thickness and a second portion having a second thickness that is greater than the first thickness.

公开(公告)号：US20160104726A1

公开(公告)日：2016-04-14

申请号：US14696257

申请日：2015-04-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Woonghee Jeong ,  Joonhwa Bae ,  Youngki Shin ,  Yoonho Khang

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/66757 ,  H01L21/02532 ,  H01L21/02675 ,  H01L27/1281 ,  H01L29/78675

Abstract: Thin film transistor substrate includes: a substrate; a crystalline silicon layer on the substrate; and a capping layer covering the crystalline silicon layer and including a first portion having a first thickness and a second portion having a second thickness that is greater than the first thickness.

Abstract translation: 薄膜晶体管基板包括：基板; 基底上的晶体硅层; 以及覆盖所述晶体硅层并且包括具有第一厚度的第一部分和具有大于所述第一厚度的第二厚度的第二部分的覆盖层。