公开(公告)号：US11967669B2

公开(公告)日：2024-04-23

申请号：US17843052

申请日：2022-06-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jae-Bum Han ,  Young Gil Park ,  Jung Hwa Park ,  Na Ri Ahn ,  Soo Im Jeong ,  Ki Nam Kim ,  Moon Sung Kim

IPC: H01L27/12 ,  H01L29/24 ,  H01L33/40 ,  H01L33/58

CPC classification number: H01L33/58 ,  H01L27/1225 ,  H01L27/1237 ,  H01L29/24 ,  H01L33/40

Abstract: A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.

公开(公告)号：US20240379918A1

公开(公告)日：2024-11-14

申请号：US18641481

申请日：2024-04-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jae-Bum HAN ,  Young Gil PARK ,  Jung Hwa PARK ,  Na Ri AHN ,  Soo Im Jeong ,  Ki Nam KIM ,  Moon Sung KIM

IPC: H01L33/58 ,  H01L27/12 ,  H01L29/24 ,  H01L33/40

Abstract: A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.

公开(公告)号：US20230276660A1

公开(公告)日：2023-08-31

申请号：US18140530

申请日：2023-04-27

Applicant: Samsung Display Co., Ltd.

Inventor： Jae Bum HAN ,  Moon Sung Kim ,  Young Gil Park ,  Soo Im Jeong

IPC: H10K59/121 ,  H10K59/40

CPC classification number: H10K59/1213 ,  H10K59/40 ,  G09G2300/0426 ,  G09G3/3233

Abstract: A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.

公开(公告)号：US20220320391A1

公开(公告)日：2022-10-06

申请号：US17843052

申请日：2022-06-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jae-Bum HAN ,  Young Gil Park ,  Jung Hwa Park ,  Na Ri Ahn ,  Soo Im Jeong ,  Ki Nam Kim ,  Moon Sung Kim

IPC: H01L33/58 ,  H01L33/40 ,  H01L29/24 ,  H01L27/12

Abstract: A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.

公开(公告)号：US10975274B2

公开(公告)日：2021-04-13

申请号：US15654943

申请日：2017-07-20

Applicant: SAMSUNG DISPLAY CO., LTD. ,  DONGGUAN DYT ELECTRONIC TAPE CO., LTD.

Inventor： Sung Kim ,  Hyun Sook Kim ,  Jang Hwan Jeong ,  Sung Chan Jo ,  Kyung Lae Rho ,  Soo Im Jeong ,  Oh Jung Kwon ,  Sung Hwan Kim ,  Oh Nam Kwon ,  Jae Gwan Lee ,  Jung Hun Kim

IPC: C09J133/06 ,  C09J7/20 ,  B32B7/06 ,  B32B7/12 ,  B32B27/30 ,  C09J11/04 ,  C09J11/08

Abstract: Disclosed is an acrylic adhesive, including an acrylic polymer obtained by polymerizing a mixture of about 120 parts by weight to about 250 parts by weight of acrylic monomers with about 0.1 parts by weight to about 1 parts by weight of an azo initiator, about 0.5 parts by weight to about 1 parts by weight of a filler, about 1.5 parts by weight to about 2.5 parts by weight of a crosslinking agent, and about 0.5 parts by weight to 1 parts by weight of an anti-static agent.

公开(公告)号：US10546959B2

公开(公告)日：2020-01-28

申请号：US15662502

申请日：2017-07-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sung Wook Woo ,  Chang Ho Lee ,  Kyung Lae Rho ,  Doo Hyoung Lee ,  Sung Chan Jo ,  Sang Woo Sohn ,  Sang Won Shin ,  Soo Im Jeong ,  Chang Yong Jeong

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24 ,  H01L29/10

Abstract: A transistor includes a gate electrode, a semiconductor layer overlapping the gate electrode, the semiconductor layer including an oxide semiconductor, and a source electrode and a drain electrode spaced apart from the source electrode, wherein the source and drain electrodes are connected to the semiconductor layer. The semiconductor layer includes a plurality of layers, wherein a crystallinity of a layer of the plurality of layers of the semiconductor layer is a ratio of a crystalline oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer, to an amorphous oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer. A first layer of the plurality of layers of the semiconductor layer has a different crystallinity with respect to a second layer of the plurality of layers of the semiconductor layer.

公开(公告)号：US12127435B2

公开(公告)日：2024-10-22

申请号：US18140530

申请日：2023-04-27

Applicant: Samsung Display Co., Ltd.

Inventor： Jae Bum Han ,  Moon Sung Kim ,  Young Gil Park ,  Soo Im Jeong

IPC: H01L29/08 ,  H10K59/121 ,  H10K59/40 ,  G09G3/3233 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H10K59/12

CPC classification number: H10K59/1213 ,  H10K59/40 ,  G09G3/3233 ,  G09G2300/0426 ,  H01L27/1222 ,  H01L27/1274 ,  H01L29/66757 ,  H01L29/78675 ,  H10K59/1201

Abstract: A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.

公开(公告)号：US11367815B2

公开(公告)日：2022-06-21

申请号：US16941102

申请日：2020-07-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jae-Bum Han ,  Young Gil Park ,  Jung Hwa Park ,  Na Ri Ahn ,  Soo Im Jeong ,  Ki Nam Kim ,  Moon Sung Kim

IPC: H01L27/00 ,  H01L29/00 ,  H01L33/00 ,  H01L33/58 ,  H01L33/40 ,  H01L29/24 ,  H01L27/12

Abstract: A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.

公开(公告)号：US20210066555A1

公开(公告)日：2021-03-04

申请号：US16941102

申请日：2020-07-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jae-Bum HAN ,  Young Gil PARK ,  Jung Hwa PARK ,  Na Ri AHN ,  Soo Im Jeong ,  Ki Nam KIM ,  Moon Sung KIM

IPC: H01L33/58 ,  H01L33/40 ,  H01L27/12 ,  H01L29/24

Abstract: A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. Hie first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.

公开(公告)号：US12269965B2

公开(公告)日：2025-04-08

申请号：US17654135

申请日：2022-03-09

Applicant: Samsung Display Co., Ltd. ,  SAMHWA PAINTS INDUSTRIES CO., LTD.

Inventor： Sung Kim ,  Hyun Sook Kim ,  Sung-Chan Jo ,  Kyung Lae Rho ,  Soo Im Jeong ,  Seung Kyu Lee ,  Jang Hwan Jeong ,  Jae Ho Choi ,  Soon Jong Kim ,  Seong Gea Kim ,  Jae Duck Jung ,  Dong Hyeok Oh ,  Kyoung Seok Cho

IPC: C09D175/08 ,  B05D3/02 ,  C08G18/12 ,  C08G18/24 ,  C08G18/48 ,  C08G18/73 ,  C08K3/017 ,  C08K3/105 ,  C08K5/00 ,  C08K5/11 ,  C08K3/10 ,  C08K5/29

Abstract: A resin composition according to an exemplary embodiment of the present disclosure includes a first polyol represented by Chemical Formula 1, a second polyol represented by Chemical Formula 2, and a polyisocyanate, wherein the first polyol and the second polyol have a linear structure without a side chain. each of Y1 to Y4 is H or OH—, at least one of Y1 and Y2 is OH—, at least one of Y3 and Y4 is OH—, each of X1 to X3 is independently a C1-C20 alkyl group, the alkyl group includes or does not include an unsaturated bond, —CH2— in the alkyl group may be substituted or unsubstituted with —CHOH—, and each of n and m is independently 1 to 200.