公开(公告)号：US12167587B2

公开(公告)日：2024-12-10

申请号：US17733051

申请日：2022-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang Eun Lee ,  Suk Hoon Kim ,  Hyo-Sub Kim

IPC: H10B12/00

Abstract: A semiconductor memory device with an improved electric characteristic and reliability is provided. The semiconductor memory device including a substrate including an active region defined by device separation film, the active region including a first part and second parts, the second parts being on two opposite sides of the first part, respectively a bit line extending on the substrate and across the active region, and a bit line contact between the substrate and the bit line and connected to the first part of the active region may be provided. The bit line contact includes a first ruthenium pattern, and a width of upper surface of the first ruthenium pattern is smaller than a width of bottom surface of the first ruthenium pattern.

公开(公告)号：US11854979B2

公开(公告)日：2023-12-26

申请号：US17379000

申请日：2021-07-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang Eun Lee ,  Min Joo Lee ,  Wan Don Kim ,  Hyeon Jin Shin ,  Hyun Bae Lee ,  Hyun Seok Lim

IPC: H01L23/532 ,  H10B12/00 ,  H01L21/768

CPC classification number: H01L23/53252 ,  H01L23/53276 ,  H10B12/0335 ,  H10B12/315 ,  H10B12/482 ,  H01L21/76885

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an element isolation layer, the element isolation layer defining an active region, a plurality of word lines traversing the active region in a first direction, and a plurality of bit line structures on the substrate and connected to the active region, the plurality of bit line structures extending in a second direction different from the first direction. Each of the plurality of bit line structures includes a ruthenium line wiring including a bottom surface and a top surface opposite to the bottom surface, a lower graphene layer in contact with the bottom surface of the ruthenium line wiring and extending along the bottom surface of the ruthenium line wiring, and a wiring line capping layer extending along the top surface of the ruthenium line wiring.

公开(公告)号：US12014988B2

公开(公告)日：2024-06-18

申请号：US17358752

申请日：2021-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang Eun Lee ,  Min Joo Lee ,  Wan Don Kim ,  Hyun Bae Lee

IPC: H01L23/532 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L23/53266 ,  H01L23/5226 ,  H01L23/5286 ,  H01L23/53238 ,  H01L23/53252

Abstract: A semiconductor device and a method for fabricating the same. The semiconductor device comprising: a first level wiring disposed at a first metal level, and includes a first line wiring, a first insulating capping film and a first side wall graphene film, the first insulating capping film extending along an upper surface of the first line wiring, and the first side wall graphene film extending along a side wall of the first line wiring; an interlayer insulating film covering the side wall of the first line wiring and a side wall of the first insulating capping film; and a second level wiring disposed at a second metal level higher than the first metal level, and includes a second via connected to the first line wiring, and a second line wiring connected to the second via, wherein the second via penetrates the first insulating capping film.

公开(公告)号：US20150129996A1

公开(公告)日：2015-05-14

申请号：US14184664

申请日：2014-02-19

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Jang Eun Lee ,  Kiseok Moon

IPC: H01L43/12 ,  H01L43/02 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L43/12 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/10

Abstract: A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. A free layer and nonmagnetic spacer layer are provided. The free layer and nonmagnetic spacer layer are annealed at an anneal temperature of at least three hundred fifty degrees Celsius. A pinned layer is provided after the annealing step. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述了一种用于提供可用于磁性装置和磁结的磁结的方法。 提供自由层和非磁性间隔层。 自由层和非磁性间隔层在至少三十五摄氏度的退火温度下退火。 在退火步骤之后提供钉扎层。 非磁性间隔层位于被钉扎层和自由层之间。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

公开(公告)号：US09306155B2

公开(公告)日：2016-04-05

申请号：US14171574

申请日：2014-02-03

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Jang Eun Lee

IPC: H01L29/82 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/10 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer includes at least one of a hybrid perpendicular magnetic anisotropy (PMA) structure and tetragonal bulk perpendicular magnetic anisotropy (B-PMA) structure. At least one of the free layer and the pinned layer have a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁性结包括自由层，被钉扎层和位于游离层和被钉扎层之间的非磁性间隔层。 自由层包括混合垂直磁各向异性（PMA）结构和四方体体垂直磁各向异性（B-PMA）结构中的至少一种。 自由层和被钉扎层中的至少一个具有大于面外退磁能的垂直磁各向异性能。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

公开(公告)号：US20150129997A1

公开(公告)日：2015-05-14

申请号：US14184684

申请日：2014-02-19

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Jang Eun Lee

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/12 ,  G11B2005/3996 ,  G11C11/16 ,  G11C11/161 ,  H01L27/226 ,  H01L43/08 ,  Y10T29/49034

Abstract: A method for providing a dual magnetic junction usable in a magnetic device and the dual magnetic junction are described. First and second nonmagnetic spacer layers, a free layer and pinned are provided. The first pinned layer, free layer and nonmagnetic spacer layer may be annealed at an anneal temperature of at least three hundred fifty degrees Celsius before a second pinned layer is provided. The second pinned layer may include Co, Fe and Tb. The nonmagnetic spacer layers are between the pinned layers and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述了一种用于提供可用于磁性装置和双重磁性结的双重磁性结的方法。 第一和第二非磁性间隔层，提供自由层和钉扎。 在提供第二被钉扎层之前，可以在至少三百五十摄氏度的退火温度下退火第一被钉扎层，自由层和非磁性间隔层。 第二被钉扎层可以包括Co，Fe和Tb。 非磁性间隔层位于钉扎层和自由层之间。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

公开(公告)号：US09373781B2

公开(公告)日：2016-06-21

申请号：US14184684

申请日：2014-02-19

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Jang Eun Lee

IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16 ,  G11B5/39

CPC classification number: H01L43/12 ,  G11B2005/3996 ,  G11C11/16 ,  G11C11/161 ,  H01L27/226 ,  H01L43/08 ,  Y10T29/49034

Abstract: A method for providing a dual magnetic junction usable in a magnetic device and the dual magnetic junction are described. First and second nonmagnetic spacer layers, a free layer and pinned are provided. The first pinned layer, free layer and nonmagnetic spacer layer may be annealed at an anneal temperature of at least three hundred fifty degrees Celsius before a second pinned layer is provided. The second pinned layer may include Co, Fe and Tb. The nonmagnetic spacer layers are between the pinned layers and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述了一种用于提供可用于磁性装置和双重磁性结的双重磁性结的方法。 第一和第二非磁性间隔层，提供自由层和钉扎。 在提供第二被钉扎层之前，可以在至少三百五十摄氏度的退火温度下退火第一被钉扎层，自由层和非磁性间隔层。 第二被钉扎层可以包括Co，Fe和Tb。 非磁性间隔层位于钉扎层和自由层之间。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

公开(公告)号：US20150129993A1

公开(公告)日：2015-05-14

申请号：US14171574

申请日：2014-02-03

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Jang Eun Lee

IPC: H01L43/10 ,  H01L43/12

CPC classification number: H01L43/10 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer includes at least one of a hybrid perpendicular magnetic anisotropy (PMA) structure and tetragonal bulk perpendicular magnetic anisotropy (B-PMA) structure. At least one of the free layer and the pinned layer have a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁性结包括自由层，被钉扎层和位于游离层和被钉扎层之间的非磁性间隔层。 自由层包括混合垂直磁各向异性（PMA）结构和四方体体垂直磁各向异性（B-PMA）结构中的至少一种。 自由层和被钉扎层中的至少一个具有大于面外退磁能的垂直磁各向异性能。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。