公开(公告)号：US12094974B2

公开(公告)日：2024-09-17

申请号：US18307279

申请日：2023-04-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaemun Kim ,  Dahye Kim ,  Jinbum Kim ,  Gyeom Kim ,  Dohee Kim ,  Dongwoo Kim ,  Seunghun Lee

IPC: H01L29/78 ,  H01L21/8234 ,  H01L29/417 ,  H01L29/66 ,  H01L29/04

CPC classification number: H01L29/785 ,  H01L21/823431 ,  H01L29/41791 ,  H01L29/6681 ,  H01L29/66818 ,  H01L29/045

Abstract: A semiconductor device includes a substrate including a fin-type active region, the fin-type active region extending in a first direction; a plurality of channel layers on the fin-type active region, the plurality of channel layers including an uppermost channel layer, a lowermost channel layer, and an intermediate channel layer isolated from direct contact with each other in a direction perpendicular to an upper surface of the substrate; a gate electrode surrounding the plurality of channel layers and extending in a second direction intersecting the first direction; a gate insulating film between the plurality of channel layers and the gate electrode; and source/drain regions electrically connected to the plurality of channel layers. In a cross section taken in the second direction, the uppermost channel layer has a width greater than a width of the intermediate channel layer.

公开(公告)号：US11984507B2

公开(公告)日：2024-05-14

申请号：US17206229

申请日：2021-03-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongwoo Kim ,  Jinbum Kim ,  Gyeom Kim ,  Dohee Kim ,  Seunghun Lee

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/06 ,  H01L29/161 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/78618 ,  H01L21/02532 ,  H01L21/02603 ,  H01L29/0673 ,  H01L29/161 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66742 ,  H01L29/78696

Abstract: A semiconductor device including an active region extending in a first direction on a substrate; channel layers vertically spaced apart on the active region; a gate structure extending in a second direction and intersecting the active region, the gate structure surrounding the channel layers; a source/drain region on the active region in contact with the channel layers; and a contact plug connected to the source/drain region, wherein the source/drain region includes a first epitaxial layer on side surfaces of the channel layers and including a first impurity; a second epitaxial layer on the first epitaxial layer and including the first impurity and a second impurity; and a third epitaxial layer on the second epitaxial layer and including the first impurity, and in a horizontal sectional view, the second epitaxial layer includes a peripheral portion having a thickness in the first direction that increases along the second direction.

公开(公告)号：US11664453B2

公开(公告)日：2023-05-30

申请号：US17192301

申请日：2021-03-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaemun Kim ,  Dahye Kim ,  Jinbum Kim ,  Gyeom Kim ,  Dohee Kim ,  Dongwoo Kim ,  Seunghun Lee

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/417 ,  H01L21/8234 ,  H01L29/04

CPC classification number: H01L29/785 ,  H01L21/823431 ,  H01L29/41791 ,  H01L29/6681 ,  H01L29/66818 ,  H01L29/045

Abstract: A semiconductor device includes a substrate including a fin-type active region, the fin-type active region extending in a first direction; a plurality of channel layers on the fin-type active region, the plurality of channel layers including an uppermost channel layer, a lowermost channel layer, and an intermediate channel layer isolated from direct contact with each other in a direction perpendicular to an upper surface of the substrate; a gate electrode surrounding the plurality of channel layers and extending in a second direction intersecting the first direction; a gate insulating film between the plurality of channel layers and the gate electrode; and source/drain regions electrically connected to the plurality of channel layers. In a cross section taken in the second direction, the uppermost channel layer has a width greater than a width of the intermediate channel layer.

公开(公告)号：US20230076270A1

公开(公告)日：2023-03-09

申请号：US17720880

申请日：2022-04-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dohee Kim ,  Sunguk Jang ,  Bongjin Kuh ,  Kongsoo Lee ,  Sahwan Hong

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/786

Abstract: An integrated circuit device includes: an active region extending in a first horizontal direction on a substrate; a first transistor at a first vertical level on the active region, the first transistor including a first source/drain region having a first conductive type; and a second transistor at a second vertical level that is higher than the first vertical level on the active region, the second transistor including a second source/drain region having a second conductive type and overlapping the first source/drain region in a vertical direction, wherein the first source/drain region and the second source/drain region have different sizes.

公开(公告)号：US12237383B2

公开(公告)日：2025-02-25

申请号：US17404078

申请日：2021-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dohee Kim ,  Gyeom Kim ,  Jinbum Kim ,  Jaemun Kim ,  Seunghun Lee

IPC: H01L29/417 ,  H01L27/088 ,  H01L29/78

Abstract: An integrated circuit (IC) device includes a fin-type active region extending in a first lateral direction on a substrate, a gate line extending in a second lateral direction on the fin-type active region, an insulating spacer covering a sidewall of the gate line, a source/drain region at a position adjacent to the gate line, a metal silicide film covering a top surface of the source/drain region, and a source/drain contact apart from the gate line with the insulating spacer therebetween in the first lateral direction. The source/drain contact includes a bottom contact segment being in contact with a top surface of the metal silicide film and an upper contact segment integrally connected to the bottom contact segment. A width of the bottom contact segment is greater than a width of at least a portion of the upper contact segment in the first lateral direction.

公开(公告)号：US12113108B2

公开(公告)日：2024-10-08

申请号：US17472926

申请日：2021-09-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dohee Kim ,  Gyeom Kim ,  Jinbum Kim ,  Haejun Yu ,  Kyungin Choi ,  Kihyun Hwang ,  Seunghun Lee

IPC: H01L29/41 ,  H01L27/088 ,  H01L29/417

CPC classification number: H01L29/41775 ,  H01L27/0886

Abstract: An integrated circuit device includes a plurality of gate structures each including a gate line extending on a fin-type active region and insulation spacers on sidewalls of the gate line; a source/drain contact between first and second gate structures, and having opposing sides that are asymmetric in the first horizontal direction; and an insulation liner on sidewalls of the source/drain contact. The source/drain contact includes a lower contact portion and an upper contact portion having a horizontal extension that extends on an upper corner of the first gate structure, the insulation liner includes a first local region between the upper corner and the horizontal extension and a second local region that is farther from the substrate than the first local region, and a thickness of the first local region is greater than that of the second local region.

公开(公告)号：US20220246738A1

公开(公告)日：2022-08-04

申请号：US17472926

申请日：2021-09-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dohee Kim ,  Gyeom Kim ,  Jinbum Kim ,  Haejun Yu ,  Kyungin Choi ,  Kihyun Hwang ,  Seunghun Lee

IPC: H01L29/417 ,  H01L27/088

Abstract: An integrated circuit device includes a plurality of gate structures each including a gate line extending on a fin-type active region and insulation spacers on sidewalls of the gate line; a source/drain contact between first and second gate structures, and having opposing sides that are asymmetric in the first horizontal direction; and an insulation liner on sidewalls of the source/drain contact. The source/drain contact includes a lower contact portion and an upper contact portion having a horizontal extension that extends on an upper corner of the first gate structure, the insulation liner includes a first local region between the upper corner and the horizontal extension and a second local region that is farther from the substrate than the first local region, and a thickness of the first local region is greater than that of the second local region.