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    MAGNETIC MEMORY DEVICE
    1.
    发明申请
    MAGNETIC MEMORY DEVICE 有权

    公开(公告)号：US20210134380A1

    公开(公告)日：2021-05-06

    申请号：US17001740

    申请日：2020-08-25

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Eunsun NOH ,  Sungchul LEE ,  Unghwan PI

    IPC: G11C19/08 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16

    Abstract: A magnetic memory device includes a reading unit on a substrate, a magnetic track layer on the reading unit, the magnetic track layer including a bottom portion between first and second sidewall portions, and a mold structure on the bottom portion of the magnetic track layer, and between the first and second sidewall portions. The mold structure includes first and second mold layers alternately arranged in a first direction perpendicular to a top surface of the substrate, and the magnetic track layer includes magnetic domains and magnetic domain walls between magnetic domains, the first and second sidewall portions of the magnetic track layer including sidewall notches corresponding to the magnetic domain walls, and the bottom portion includes a bottom notch corresponding to one of the magnetic domain walls.

    MAGNETIC MEMORY DEVICES
    4.
    发明申请
    MAGNETIC MEMORY DEVICES 审中-公开

    公开(公告)号：US20200152700A1

    公开(公告)日：2020-05-14

    申请号：US16434478

    申请日：2019-06-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Joonmyoung LEE ,  Ung Hwan PI ,  Eunsun NOH ,  Yong Sung PARK

    IPC: H01L27/22 ,  H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  G11C11/16

    Abstract: A magnetic memory device includes a first magnetic tunnel junction pattern on a substrate, a second magnetic tunnel junction pattern on the first magnetic tunnel junction pattern, and a conductive line between the first magnetic tunnel junction pattern and the second magnetic tunnel junction pattern. The conductive line is configured such that a current flowing through the conductive line flows in parallel to an interface between the conductive line and each of the first and second magnetic tunnel junction patterns.

    MAGNETIC MEMORY DEVICE
    5.
    发明申请
    MAGNETIC MEMORY DEVICE 有权

    公开(公告)号：US20230074076A1

    公开(公告)日：2023-03-09

    申请号：US17726056

    申请日：2022-04-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Joonmyoung LEE ,  Whankyun KIM ,  Eunsun NOH ,  Heeju SHIN ,  Junho JEONG

    IPC: H01L43/10 ,  H01L27/22 ,  H01L43/02

    Abstract: A magnetic memory device may include a pinned magnetic pattern and a free magnetic pattern which are stacked on a substrate, a tunnel barrier pattern between the pinned magnetic pattern and the free magnetic pattern, a capping pattern on the free magnetic pattern, and a non-magnetic pattern between the free magnetic pattern and the capping pattern. The free magnetic pattern may be between the tunnel barrier pattern and the capping pattern. The non-magnetic pattern may include a first non-magnetic metal and boron, and the capping pattern includes a second non-magnetic metal. A boride formation energy of the second non-magnetic metal may be higher than a boride formation energy of the first non-magnetic metal.

    MAGNETIC MEMORY DEVICE
    8.
    发明申请
    MAGNETIC MEMORY DEVICE 有权

    公开(公告)号：US20230117646A1

    公开(公告)日：2023-04-20

    申请号：US17952808

    申请日：2022-09-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Joonmyoung LEE ,  Whankyun KIM ,  Eunsun NOH ,  Junho JEONG ,  YoungJun CHO

    IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetic memory device includes a pinned magnetic pattern, a tunnel barrier pattern, a free magnetic pattern, a diffusion barrier pattern, a non-magnetic pattern and a capping pattern, which are sequentially stacked on a substrate. The diffusion barrier pattern includes a first non-magnetic metal and oxygen. The non-magnetic pattern includes a second non-magnetic metal and oxygen. An oxide formation energy of the first non-magnetic metal is lower than an oxide formation energy of the second non-magnetic metal.

    MAGNETIC MEMORY DEVICE
    9.
    发明申请
    MAGNETIC MEMORY DEVICE 有权

    公开(公告)号：US20220320418A1

    公开(公告)日：2022-10-06

    申请号：US17502411

    申请日：2021-10-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Whankyun KIM ,  Joonmyoung LEE ,  Junho JEONG ,  Eunsun NOH ,  Jeong-Heon PARK ,  YoungJun CHO

    IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

    Abstract: A magnetic memory device including a substrate; a first and second magnetic pattern stacked on the substrate; a tunnel barrier pattern between the first and second magnetic pattern; a bottom electrode between the substrate and the first magnetic pattern; a seed pattern between the bottom electrode and the first magnetic pattern; and a diffusion barrier pattern between the bottom electrode and the seed pattern, wherein a bottom surface of the at least one diffusion barrier pattern is in contact with a top surface of the bottom electrode, and a top surface of the at least one diffusion barrier pattern is in contact with a bottom surface of the seed pattern, the at least one diffusion barrier pattern includes a non-magnetic metal, or an alloy of the non-magnetic metal and a non-metal element, and the non-magnetic metal includes Ta, W, Nb, Ti, Cr, Zr, Hf, Mo, Al, Mg, or V.

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