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    IMAGE SENSOR AND AN IMAGE PROCESSING DEVICE INCLUDING THE SAME
    1.
    发明申请
    IMAGE SENSOR AND AN IMAGE PROCESSING DEVICE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20200066778A1

    公开(公告)日：2020-02-27

    申请号：US16661346

    申请日：2019-10-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： GWI-DEOK RYAN LEE ,  Myung Won Lee ,  Tae Yon Lee ,  In Gyu Baek

    IPC: H01L27/146 ,  H04N9/04 ,  H04N5/378 ,  H01L27/30

    Abstract: An image sensor includes a semiconductor substrate providing a plurality of pixel regions, a semiconductor photoelectric device disposed in each of the plurality of pixel regions, an organic photoelectric device disposed above the semiconductor photoelectric device, and a pixel circuit disposed below the semiconductor photoelectric device. The pixel circuit includes a plurality of driving transistors configured to generate a pixel voltage signal from an electric charge generated in the semiconductor photoelectric device and the organic photoelectric device. A driving gate electrode of at least one of the plurality of driving transistors has a region embedded in the semiconductor substrate.

    IMAGE SENSORS WITH MULTIPLE FUNCTIONS AND IMAGE SENSOR MODULES INCLUDING THE SAME
    4.
    发明申请
    IMAGE SENSORS WITH MULTIPLE FUNCTIONS AND IMAGE SENSOR MODULES INCLUDING THE SAME 有权

    公开(公告)号：US20210075985A1

    公开(公告)日：2021-03-11

    申请号：US16950122

    申请日：2020-11-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： TAE-YON LEE ,  GWI-DEOK RYAN LEE ,  MASARU ISHII ,  DONG-MO IM

    IPC: H04N5/369 ,  H01L27/30 ,  G06K9/20 ,  H01L27/146 ,  G06K9/00 ,  H01L27/28 ,  H04N9/04 ,  H04N5/33

    Abstract: An image sensor includes a first sensor pixel and a second sensor pixel that vertically overlap each other. The first sensor pixel includes a first signal generation circuit, and a first photoelectric converter that is connected to the first signal generation circuit and configured to generate first information from light having a first wavelength. The second sensor pixel includes a second signal generation circuit, and a second photoelectric converter that is connected to the second signal generation circuit and configured to generate second information from light having a second wavelength. A first horizontal surface area of the first photoelectric converter is different from a second horizontal surface area of the second photoelectric converter. An image sensor module includes the image sensor, a light source configured to emit light to a target object, and a dual band pass filter configured to selectively pass light reflected from the target object.

    IMAGE SENSOR
    5.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20190305022A1

    公开(公告)日：2019-10-03

    申请号：US16428940

    申请日：2019-05-31

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： GWI-DEOK RYAN LEE ,  KWANG-MIN LEE ,  BEOM-SUK LEE ,  TAE-YON LEE

    IPC: H01L27/146 ,  H01L27/28 ,  H01L27/30

    Abstract: An image sensor of reduced chip size includes a semiconductor substrate having an active pixel region in which a plurality of active pixels are disposed and a power delivery region in which a pad is disposed. A plurality of first transparent electrode layers is disposed over the semiconductor substrate, respectively corresponding to the plurality of active pixels. A second transparent electrode layer is integrally formed across the active pixels. An organic photoelectric layer is disposed between the plurality of first transparent electrode layers and the second transparent electrode layer. An interconnection layer is located at a level that is the same as or higher than an upper surface of the pad with respect to an upper main surface of the semiconductor substrate. The interconnection layer extends from the pad to the second transparent electrode layer, and includes a connector electrically connecting the pad and the second transparent electrode layer.

    IMAGE SENSOR
    6.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20210066362A1

    公开(公告)日：2021-03-04

    申请号：US17035908

    申请日：2020-09-29

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： GWI-DEOK RYAN LEE ,  TAEYON LEE

    IPC: H01L27/146 ,  H01L27/148 ,  H01L31/062

    Abstract: An image sensor may include a substrate including a plurality of unit pixel regions and having first and second surfaces facing each other. Each of the unit pixel regions may include a plurality of floating diffusion parts spaced apart from each other in the substrate, storage nodes provided in the substrate to be spaced apart from and facing the floating diffusion parts, a transfer gate adjacent to a region between the floating diffusion parts and the storage nodes, and photoelectric conversion parts sequentially stacked on one of the first and second surfaces. Each of the photoelectric conversion parts may include common and pixel electrodes respectively provided on top and bottom surfaces thereof and each pixel electrode may be electrically connected to a corresponding one of the storage nodes.

    IMAGE SENSOR
    7.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20180190697A1

    公开(公告)日：2018-07-05

    申请号：US15692244

    申请日：2017-08-31

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： GWI-DEOK RYAN LEE ,  TAEYON LEE

    IPC: H01L27/146 ,  H01L27/148 ,  H01L31/062

    CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/14893 ,  H01L31/062

    Abstract: An image sensor may include a substrate including a plurality of unit pixel regions and having first and second surfaces facing each other. Each of the unit pixel regions may include a plurality of floating diffusion parts spaced apart from each other in the substrate, storage nodes provided in the substrate to be spaced apart from and facing the floating diffusion parts, a transfer gate adjacent to a region between the floating diffusion parts and the storage nodes, and photoelectric conversion parts sequentially stacked on one of the first and second surfaces. Each of the photoelectric conversion parts may include common and pixel electrodes respectively provided on top and bottom surfaces thereof and each pixel electrode may be electrically connected to a corresponding one of the storage nodes.

    IMAGE SENSOR
    8.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20180190696A1

    公开(公告)日：2018-07-05

    申请号：US15653537

    申请日：2017-07-19

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： GWI-DEOK RYAN LEE ,  KWANG-MIN LEE ,  BEOM-SUK LEE ,  TAE-YON LEE

    IPC: H01L27/146 ,  H01L27/28

    CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14667 ,  H01L27/14683 ,  H01L27/28 ,  H01L27/307

    Abstract: An image sensor of reduced chip size includes a semiconductor substrate having an active pixel region in which a plurality of active pixels are disposed and a power delivery region in which a pad is disposed. A plurality of first transparent electrode layers is disposed over the semiconductor substrate, respectively corresponding to the plurality of active pixels. A second transparent electrode layer is integrally formed across the active pixels. An organic photoelectric layer is disposed between the plurality of first transparent electrode layers and the second transparent electrode layer. An interconnection layer is located at a level that is the same as or higher than an upper surface of the pad with respect to an upper main surface of the semiconductor substrate. The interconnection layer extends from the pad to the second transparent electrode layer, and includes a connector electrically connecting the pad and the second transparent electrode layer.

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