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公开(公告)号：US11822800B2
公开(公告)日：2023-11-21
申请号：US17848820
申请日：2022-06-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyunkyo Oh , Sanghyun Choi , Heewon Lee
CPC classification number: G06F3/0634 , G06F3/0607 , G06F3/0611 , G06F3/0658 , G06F3/0688 , G06F12/0646
Abstract: Provided are a storage system including a host and a storage device, and an operation method of the storage system. The storage device includes a memory controller and a memory device, where an operation method of the memory controller includes receiving from the host a first mode change request for a folder, which is a unit for managing at least one file, and a logical address of the at least one file, and in response to the first mode change request, rewriting to the memory device first data corresponding to the logical address in a second operating mode, and invalidating first data which is existing data already written to correspond to the logical address and the first data in a first operating mode, wherein the first mode change request sets a data operation speed to a high-speed mode for the at least one file included in the folder.
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2.发明授权公开(公告)号：US11409441B2
公开(公告)日：2022-08-09
申请号：US16999201
申请日：2020-08-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yeonji Kim , Youngdeok Seo , Chanha Kim , Kangho Roh , Hyunkyo Oh , Heewon Lee
Abstract: An operation method of a storage controller which includes a nonvolatile memory device, the method including: collecting a first parameter indicating a degradation factor of a first memory area of the nonvolatile memory device and a second parameter indicating a degree of degradation occurring at the first memory area, in an initial driving period; selecting a first function model of a plurality of function models based on the first parameter and the second parameter and predicting a first error tendency of the first memory area based on the first function model; determining a first reliability interval based on the first error tendency; and performing a first reliability operation on the first memory area of the nonvolatile memory device based on the first reliability interval.
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公开(公告)号：US20250014664A1
公开(公告)日：2025-01-09
申请号：US18677544
申请日：2024-05-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Minji Cho , Hee-Woong Kang , Jin-Young Kim , Se Hwan Park , Ji-Sang Lee , Heewon Lee , Su Chang Jeon
Abstract: Disclosed is a method of operating a storage device which includes a storage controller and a non-volatile memory device. The method includes providing, by the storage controller, the non-volatile memory device with a first request indicating a wordline selection operation of a target memory block, obtaining, by the non-volatile memory device, distribution information of a plurality of wordlines of the target memory block based on the first request, determining, by the non-volatile memory device, a deterioration wordline among the plurality of wordlines based on the distribution information, and providing, by the non-volatile memory device, the storage controller with wordline information indicating the deterioration wordline.
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公开(公告)号：US12165694B2
公开(公告)日：2024-12-10
申请号：US18223783
申请日：2023-07-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Su Chang Jeon , Woohyun Kang , Seungkyung Ro , Sangkwon Moon , Heewon Lee
IPC: G06F3/06 , G11C11/408
Abstract: Disclosed is a nonvolatile memory device which include a memory cell array including a plurality of memory cells connected to a plurality of word lines, an address decoder that controls a selected word line among the plurality of word lines based on an address received from an external device including a first temperature sensor, a second temperature sensor that measures a read temperature of first memory cells connected to the selected word line from among the plurality of memory cells, and a temperature compensation circuit that calculates a read level offset based on the read temperature and a program temperature of the first memory cells measured by the first temperature sensor and generates a compensation read voltage based on the read level offset. The address decoder is further configured to provide the compensation read voltage to the selected word line.
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公开(公告)号：US11862261B2
公开(公告)日：2024-01-02
申请号：US17393797
申请日：2021-08-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kwangwoo Lee , Chanha Kim , Heewon Lee
CPC classification number: G11C16/3495 , G11C16/102 , G11C16/26 , G11C16/3404
Abstract: In a method of writing data in a nonvolatile memory device, a write command, a write address and write data to be programmed are received. Offset information representing a verification level is received. The offset information is provided when the write data corresponds to a distribution deterioration pattern by checking an input/output (I/O) pattern of the write data. When the offset information is received, the write data is programmed based on the offset information such that at least one state among a plurality of states included in a distribution of threshold voltages of memory cells in which the write data is stored is changed.
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Patent Agency Ranking
公开(公告)号：US11322206B2
公开(公告)日：2022-05-03
申请号：US17036060
申请日：2020-09-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jinwoo Hong , Chanha Kim , Kangho Roh , Seungkyung Ro , Yunjung Lee , Heewon Lee
Abstract: A storage device and an operating method thereof are provided. The storage device includes a non-volatile memory and a memory controller. The non-volatile memory includes memory blocks each including a word lines. The memory controller determines a word line strength of each of the word lines, adjusts a state count of each of the word lines based on the word line strengths, and adjust a program parameter of each of the word lines to decrease a program time variation between the word lines.
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公开(公告)号：US10802728B2
公开(公告)日：2020-10-13
申请号：US16416750
申请日：2019-05-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kwangwoo Lee , Chanha Kim , Yunjung Lee , Jisoo Kim , Seungkyung Ro , Jinwook Lee , Heewon Lee
Abstract: A storage device includes a nonvolatile memory device including a plurality of memory blocks, each including a plurality of memory cells connected to a plurality of word lines, and a controller configured to perform a first read operation on memory cells connected to a selected word line included in a selected memory block based on a request of an external host device. The controller is further configured to perform a check read operation that checks a reliability of the memory cells of the selected memory block after performing the first read operation. In the check read operation, the controller is further configured to select and perform one of an actual check and a machine learning-based check.
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公开(公告)号：US20190065363A1
公开(公告)日：2019-02-28
申请号：US16173390
申请日：2018-10-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sangkwon MOON , Seung-Yeon Lee , Heewon Lee , In Hwan Doh , NamWook KANG
CPC classification number: G06F12/0246 , G06F3/0614 , G06F3/0652 , G06F3/0679 , G06F12/0253 , G06F2212/1016 , G06F2212/1032 , G06F2212/7205 , G06F2212/7209
Abstract: A method of operating a data storage device includes programming non-fully programmed memory blocks at a point in time when a reference time elapses from a point in time when each of the memory blocks is physically erased, acquiring a first interval and a second interval, calculating a disturb index based on the first interval and the second interval, selecting a victim block for garbage collection based on the disturb index, and copying valid page data of the victim block into a free block. The first interval is defined by a point in time when each of the memory blocks is physically erased and a point in time when each of the memory blocks is fully programmed. The second interval is an interval during which a fully programmed state is maintained after a point in time when each of the memory blocks is fully programmed.
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公开(公告)号：US20250104784A1
公开(公告)日：2025-03-27
申请号：US18762272
申请日：2024-07-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： JunHo KIM , Sangjin Yoo , Kwangwoo Lee , Jeongwoo Lee , Heewon Lee
Abstract: A data recover read (DRR) operation method of a nonvolatile memory system includes: performing a first read operation on adjacent memory cells, which are connected to an adjacent wordline adjacent to a target wordline, based on a first specific read level; obtaining a cell count value for the adjacent wordline; determining offset values for a normal read level of target memory cells, which are connected to the target wordline, based on the cell count value for the adjacent wordline; and performing a second read operation on the target memory cells, based on the determined offset values and a result of the first read operation.
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公开(公告)号：US20210166764A1
公开(公告)日：2021-06-03
申请号：US17036060
申请日：2020-09-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jinwoo Hong , Chanha Kim , Kangho Roh , Seungkyung Ro , Yunjung Lee , Heewon Lee
Abstract: A storage device and an operating method thereof are provided. The storage device includes a non-volatile memory and a memory controller. The non-volatile memory includes memory blocks each including a word lines. The memory controller determines a word line strength of each of the word lines, adjusts a state count of each of the word lines based on the word line strengths, and adjust a program parameter of each of the word lines to decrease a program time variation between the word lines.
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