公开(公告)号：US11339467B2

公开(公告)日：2022-05-24

申请号：US16793096

申请日：2020-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Woong Kim ,  Hyeon Woo Seo ,  Hee Ju Shin ,  Se Chung Oh ,  Hyun Cho

IPC: C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  C23C14/08

Abstract: A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided.

公开(公告)号：US11735241B2

公开(公告)日：2023-08-22

申请号：US17202648

申请日：2021-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hee Ju Shin ,  Sang Hwan Park ,  Se Chung Oh ,  Ki Woong Kim ,  Hyeon Woo Seo

IPC: G11C11/00 ,  G11C11/16 ,  H01F10/32 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

CPC classification number: G11C11/161 ,  H01F10/3286 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

Abstract: A magnetic memory device includes a pinned layer, a free layer, a tunnel barrier layer between the pinned layer and the free layer, a first oxide layer spaced apart from the tunnel barrier layer with the free layer therebetween, and a second oxide layer spaced apart from the free layer with the first oxide layer therebetween. The first oxide layer includes an oxide of a first material and may have a thickness of 0.3 Å to 2.0 Å. The second oxide layer may include an oxide of a second material and may have a thickness of 0.1 Å to 5.0 Å. A first oxygen affinity of the first material may be greater than a second oxygen affinity of the second material.

公开(公告)号：US11725271B2

公开(公告)日：2023-08-15

申请号：US17721428

申请日：2022-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Woong Kim ,  Hyeon Woo Seo ,  Hee Ju Shin ,  Se Chung Oh ,  Hyun Cho

IPC: C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  C23C14/08 ,  H01J37/34

CPC classification number: C23C14/3464 ,  C23C14/08 ,  C23C14/352 ,  H01J37/32082 ,  H01J37/32155 ,  H01J37/32715 ,  H01J37/3417

Abstract: A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided.

公开(公告)号：US20210010127A1

公开(公告)日：2021-01-14

申请号：US16793096

申请日：2020-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Woong Kim ,  Hyeon Woo Seo ,  Hee Ju Shin ,  Se Chung Oh ,  Hyun Cho

IPC: C23C14/34 ,  C23C14/35 ,  C23C14/08 ,  H01J37/32

Abstract: A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided.