公开(公告)号：US12080195B2

公开(公告)日：2024-09-03

申请号：US17374115

申请日：2021-07-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gae Hwang Lee ,  Youngjun Yun ,  Jong Won Chung

IPC: H05K1/18 ,  A61B5/00 ,  A61B5/0205 ,  G09F9/30

CPC classification number: G09F9/301 ,  A61B5/0205 ,  A61B5/6801 ,  A61B2562/18 ,  A61B2562/227

Abstract: A stretchable device system includes a stretchable layer having a first elastic modulus, a plurality of unit devices under or on the stretchable layer, and a stretch controlling layer being geometrically stretchable, the stretch controlling layer having a second elastic modulus higher than the first elastic modulus.

公开(公告)号：US11717168B2

公开(公告)日：2023-08-08

申请号：US17104599

申请日：2020-11-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gae Hwang Lee ,  Youngjun Yun ,  Jong Won Chung ,  Hyun Bum Kang

IPC: A61B5/00

CPC classification number: A61B5/0086 ,  A61B5/004 ,  A61B5/0059 ,  A61B5/0075 ,  A61B5/489 ,  A61B5/6876 ,  A61B5/0033 ,  A61B2562/0233 ,  A61B2562/046 ,  A61B2562/164 ,  A61B2562/166

Abstract: A bio imaging system includes a plurality of light emitters configured to irradiate light, and a plurality of sensors configured to detect light reflected by an internal tissue of a living body. Each sensor includes a plurality of photo-detecting elements having different absorption peak wavelengths in relation to each other.

公开(公告)号：US09887373B2

公开(公告)日：2018-02-06

申请号：US14479845

申请日：2014-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Youl Lee ,  Joo Young Kim ,  Jong Won Chung ,  Sang Yoon Lee ,  Jeong Il Park

IPC: H01L51/05 ,  H01L51/00

CPC classification number: H01L51/0545 ,  H01L51/0007 ,  H01L51/0017 ,  H01L51/0018 ,  H01L51/0074 ,  H01L51/0558

Abstract: A thin film transistor includes a gate electrode and an organic semiconductor overlapping the gate electrode. A gate insulating layer is disposed between the gate electrode and the organic semiconductor. A source electrode and a drain electrode are disposed on and electrically connected to the organic semiconductor. A solvent selective photosensitive pattern is disposed on the organic semiconductor and between the source electrode and the drain electrode. An electronic device may include the thin film transistor.

公开(公告)号：US08933441B2

公开(公告)日：2015-01-13

申请号：US13736399

申请日：2013-01-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Won Chung ,  Bang Lin Lee ,  Jeong Il Park ,  Yong Wan Jin

IPC: C07D417/14 ,  C07D421/14 ,  H01L51/50 ,  C08G61/12 ,  H01L51/10 ,  H01L51/05 ,  H01L51/00

CPC classification number: H01L51/105 ,  C08G61/123 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/1412 ,  C08G2261/1424 ,  C08G2261/3142 ,  C08G2261/3223 ,  C08G2261/3229 ,  C08G2261/323 ,  C08G2261/3241 ,  C08G2261/3243 ,  C08G2261/3246 ,  C08G2261/344 ,  C08G2261/411 ,  C08G2261/412 ,  C08G2261/414 ,  C08G2261/526 ,  C08G2261/91 ,  C08G2261/92 ,  C08G2261/94 ,  C08G2261/95 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0545 ,  H01L51/0558 ,  Y02E10/549

Abstract: An organic electronic device may include an organic semiconductor compound represented by the following Chemical Formula 1 or Chemical Formula 2. Each substituent of the above Chemical Formulas 1 and 2 may be the same as described in the detailed description.

Abstract translation: 有机电子器件可以包括由以下化学式1或化学式2表示的有机半导体化合物。上述化学式1和2的每个取代基可以与详细描述中描述的相同。

公开(公告)号：US12112866B2

公开(公告)日：2024-10-08

申请号：US17392772

申请日：2021-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeongjun Lee ,  Joo Young Kim ,  Youngjun Yun ,  Hyun Bum Kang ,  Jong Won Chung

IPC: H01B5/14 ,  C23C14/24 ,  H01B5/16 ,  H01L27/12 ,  H01L27/146 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01B5/14 ,  C23C14/24 ,  H01B5/16 ,  H01L27/1218 ,  H01L27/1244 ,  H01L27/14678 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78603

Abstract: A stacked structure for a stretchable device includes a stretchable layer including an elastic polymer, and a conductive layer on the stretchable layer and including a metal, wherein the stretchable layer includes a first depth region and a second depth region sequentially disposed in a depth direction from a surface of the stretchable layer that is in contact with the conductive layer and the first depth region includes the metal.

公开(公告)号：US20230341902A1

公开(公告)日：2023-10-26

申请号：US18175962

申请日：2023-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gae Hwang LEE ,  Youngjun Yun ,  Hyun Bum Kang ,  Jong Won Chung

IPC: G06F1/16

CPC classification number: G06F1/1652

Abstract: Provided are a flexible display panel and an electronic device including the same, in the flexible display panel that is foldable, bendable, or rollable along at least one axis extending in a first direction, the flexible display panel including a substrate including a stretchable region and a non-stretchable region, a plurality of pixel circuits repeatedly arranged on the substrate, and a unit element array including unit elements repeatedly arranged on the substrate and electrically connected to each of the pixel circuits, wherein each of the pixel circuits includes a plurality of thin film transistors, the plurality of thin film transistors include a first thin film transistor on the stretchable region of the substrate, and a channel length direction of the first thin film transistor is substantially parallel to the first direction flexible display panel.

公开(公告)号：US10741766B2

公开(公告)日：2020-08-11

申请号：US15497829

申请日：2017-04-26

Applicant: Samsung Electronics Co., Ltd. ,  The Board of Trustees of the Leland Stanford Jr. University

Inventor： Jong Won Chung ,  Sangyoon Lee ,  Zhenan Bao ,  Jie Xu

IPC: H01L51/00 ,  C08L53/00 ,  C08L65/00 ,  H01L51/05 ,  C08L53/02

Abstract: Disclosed are an organic semiconductor thin film, a manufacturing method thereof, and a thin film transistor and an electronic device including the organic semiconductor thin film. The organic semiconductor thin film includes a matrix. The matrix includes an elastomer and nanoconfined polymer structures embedded in the matrix. The nanoconfined polymer structures form a polymer network. The nanoconfined polymer structures include a conjugation semiconductor polymer. The conjugation semiconductor polymer includes a repeating unit having at least one conjugation system in its main chain. The nanoconfined polymer structures are present in an upper surface layer and a lower surface layer of the organic semiconductor thin film respectively.

公开(公告)号：US10651255B2

公开(公告)日：2020-05-12

申请号：US15826011

申请日：2017-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ajeong Choi ,  Suk Gyu Hahm ,  Jeong Il Park ,  Yong Uk Lee ,  Jong Won Chung

IPC: H01L27/32 ,  H01L51/00 ,  G09G3/3233 ,  G09G3/3283 ,  G09G3/36 ,  H01L51/05

Abstract: Disclosed are a thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. The semiconductor layer overlaps the gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer. The semiconductor layer includes a first semiconductor layer including a first organic semiconductor material and a second semiconductor layer including a second organic semiconductor material. The second semiconductor layer is farther spaced apart from the gate electrode than the first semiconductor layer. A HOMO energy level of the second organic semiconductor material is different from a HOMO energy level of the first organic semiconductor material. A method of manufacturing the thin film transistor is disclosed.

公开(公告)号：US20190035868A1

公开(公告)日：2019-01-31

申请号：US15826011

申请日：2017-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ajeong Choi ,  Suk Gyu Hahm ,  Jeong II Park ,  Yong Uk Lee ,  Jong Won Chung

IPC: H01L27/32 ,  G09G3/3233 ,  G09G3/3283 ,  H01L51/05 ,  G09G3/36

Abstract: Disclosed are a thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. The semiconductor layer overlaps the gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer. The semiconductor layer includes a first semiconductor layer including a first organic semiconductor material and a second semiconductor layer including a second organic semiconductor material. The second semiconductor layer is farther spaced apart from the gate electrode than the first semiconductor layer. A HOMO energy level of the second organic semiconductor material is different from a HOMO energy level of the first organic semiconductor material. A method of manufacturing the thin film transistor is disclosed.

公开(公告)号：US12216109B2

公开(公告)日：2025-02-04

申请号：US17388630

申请日：2021-07-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Bum Kang ,  Gae Hwang Lee ,  Jong Won Chung ,  Joo Young Kim ,  Youngjun Yun ,  Suk Gyu Hahm

IPC: G01N33/48 ,  H01L27/146 ,  H05K1/02 ,  H10K59/122

Abstract: A biosensor includes a stretchable substrate, a pixel defining layer on the stretchable substrate and including a first pixel defining layer at least partially defining a first opening and a second pixel defining layer at least partially defining a second opening, a photo-detecting element at least partially in the first opening, and a first light emitting element at least partially in the second opening, wherein an area of the first pixel defining layer is equal to or greater than about twice an area of the first opening.